JP2009117821A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009117821A5 JP2009117821A5 JP2008267510A JP2008267510A JP2009117821A5 JP 2009117821 A5 JP2009117821 A5 JP 2009117821A5 JP 2008267510 A JP2008267510 A JP 2008267510A JP 2008267510 A JP2008267510 A JP 2008267510A JP 2009117821 A5 JP2009117821 A5 JP 2009117821A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- semiconductor device
- fluorine
- region
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 239000012212 insulator Substances 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 11
- 229910052731 fluorine Inorganic materials 0.000 claims 11
- 239000011737 fluorine Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 7
- 230000008021 deposition Effects 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008267510A JP5188355B2 (ja) | 2007-10-18 | 2008-10-16 | 半導体装置の作製方法、半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007271683 | 2007-10-18 | ||
| JP2007271683 | 2007-10-18 | ||
| JP2008267510A JP5188355B2 (ja) | 2007-10-18 | 2008-10-16 | 半導体装置の作製方法、半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009117821A JP2009117821A (ja) | 2009-05-28 |
| JP2009117821A5 true JP2009117821A5 (https=) | 2011-11-04 |
| JP5188355B2 JP5188355B2 (ja) | 2013-04-24 |
Family
ID=40562640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008267510A Expired - Fee Related JP5188355B2 (ja) | 2007-10-18 | 2008-10-16 | 半導体装置の作製方法、半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7955994B2 (https=) |
| JP (1) | JP5188355B2 (https=) |
| KR (1) | KR101574140B1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9312342B2 (en) | 2010-12-16 | 2016-04-12 | The Regents Of The University Of California | Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion |
| JP2016119321A (ja) * | 2013-04-17 | 2016-06-30 | パナソニック株式会社 | 半導体装置 |
| JP6494411B2 (ja) * | 2014-06-24 | 2019-04-03 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| KR102352290B1 (ko) * | 2014-09-03 | 2022-01-18 | 삼성디스플레이 주식회사 | 플렉서블 표시패널 |
| JP7805804B2 (ja) * | 2022-01-28 | 2026-01-26 | 上海天馬微電子有限公司 | 光デバイスパッケージ |
| JP2024044126A (ja) * | 2022-09-20 | 2024-04-02 | キオクシア株式会社 | 半導体記憶装置および半導体装置の製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174927A (ja) * | 1986-01-28 | 1987-07-31 | Nec Corp | 半導体装置 |
| JP3688726B2 (ja) | 1992-07-17 | 2005-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
| JP3283344B2 (ja) * | 1993-07-09 | 2002-05-20 | 沖電気工業株式会社 | 半導体素子の製造方法 |
| JP2682403B2 (ja) * | 1993-10-29 | 1997-11-26 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH07169833A (ja) * | 1993-12-14 | 1995-07-04 | Nec Corp | 半導体装置及びその製造方法 |
| JP3482725B2 (ja) | 1995-02-23 | 2004-01-06 | 東亞合成株式会社 | フッ素含有シリコン酸化膜の製造方法 |
| JPH09139428A (ja) | 1995-11-16 | 1997-05-27 | Mitsubishi Electric Corp | 半導体装置 |
| US5661334A (en) * | 1996-01-16 | 1997-08-26 | Micron Technology, Inc. | Inter-metal dielectric structure which combines fluorine-doped glass and barrier layers |
| JP2991657B2 (ja) | 1996-04-05 | 1999-12-20 | キヤノン販売株式会社 | 成膜方法 |
| US6157083A (en) * | 1996-06-03 | 2000-12-05 | Nec Corporation | Fluorine doping concentrations in a multi-structure semiconductor device |
| JP3186998B2 (ja) | 1996-06-03 | 2001-07-11 | 日本電気株式会社 | 半導体装置および半導体装置の製造方法 |
| US5935334A (en) * | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Substrate processing apparatus with bottom-mounted remote plasma system |
| US6211096B1 (en) * | 1997-03-21 | 2001-04-03 | Lsi Logic Corporation | Tunable dielectric constant oxide and method of manufacture |
| JPH1187340A (ja) * | 1997-09-05 | 1999-03-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2001085420A (ja) * | 1999-09-09 | 2001-03-30 | Toshiba Corp | 半導体装置およびその製造方法 |
| US6559594B2 (en) * | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US6835669B2 (en) * | 2000-07-21 | 2004-12-28 | Canon Sales Co., Inc. | Film forming method, semiconductor device and semiconductor device manufacturing method |
| JP2002289609A (ja) * | 2001-03-27 | 2002-10-04 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP3967567B2 (ja) * | 2001-07-30 | 2007-08-29 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
2008
- 2008-10-01 US US12/243,164 patent/US7955994B2/en not_active Expired - Fee Related
- 2008-10-01 KR KR1020080096425A patent/KR101574140B1/ko not_active Expired - Fee Related
- 2008-10-16 JP JP2008267510A patent/JP5188355B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-01 US US13/078,478 patent/US8278740B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2020102353A1 (en) | Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning | |
| US20150162416A1 (en) | Spacers with Rectangular Profile and Methods of Forming the Same | |
| TWI698916B (zh) | Vnand拉伸厚teos氧化物 | |
| JP2012004549A5 (ja) | 半導体装置 | |
| JP2009117821A5 (https=) | ||
| JP2016197719A5 (https=) | ||
| US20160268286A1 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| JP2013520830A (ja) | ビア及びエッチングされた構造におけるコンフォーマル絶縁層の形成方法及びパターン形成方法 | |
| JP2017017320A5 (https=) | ||
| JP2012216812A5 (https=) | ||
| JP2007513517A5 (https=) | ||
| CN105244269A (zh) | 一种半导体器件及其制造方法 | |
| TW202004913A (zh) | 半導體裝置的形成方法 | |
| US20180350655A1 (en) | Method of forming isolation layer | |
| CN107026127A (zh) | Fdsoi技术的外延分面高度一致性改进 | |
| JP2016528729A5 (https=) | ||
| JP2020047706A (ja) | 半導体装置およびその製造方法 | |
| KR102916735B1 (ko) | 실리콘이 구비된 층을 형성하는 방법 | |
| JP2015164185A5 (https=) | ||
| JP2018182104A5 (https=) | ||
| JP5891597B2 (ja) | 半導体基板または半導体装置の製造方法 | |
| JP2016213305A5 (ja) | 半導体装置の製造方法 | |
| KR20110078064A (ko) | 휨을 방지하는 반도체장치 제조 방법 | |
| US20160020139A1 (en) | Gap-filling dielectric layer method for manufacturing the same and applications thereof | |
| JP2019083230A5 (https=) |