JP5188355B2 - 半導体装置の作製方法、半導体装置 - Google Patents

半導体装置の作製方法、半導体装置 Download PDF

Info

Publication number
JP5188355B2
JP5188355B2 JP2008267510A JP2008267510A JP5188355B2 JP 5188355 B2 JP5188355 B2 JP 5188355B2 JP 2008267510 A JP2008267510 A JP 2008267510A JP 2008267510 A JP2008267510 A JP 2008267510A JP 5188355 B2 JP5188355 B2 JP 5188355B2
Authority
JP
Japan
Prior art keywords
insulating layer
layer
insulator
fluorine
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008267510A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009117821A (ja
JP2009117821A5 (https=
Inventor
聡志 鳥海
規悦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008267510A priority Critical patent/JP5188355B2/ja
Publication of JP2009117821A publication Critical patent/JP2009117821A/ja
Publication of JP2009117821A5 publication Critical patent/JP2009117821A5/ja
Application granted granted Critical
Publication of JP5188355B2 publication Critical patent/JP5188355B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2008267510A 2007-10-18 2008-10-16 半導体装置の作製方法、半導体装置 Expired - Fee Related JP5188355B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008267510A JP5188355B2 (ja) 2007-10-18 2008-10-16 半導体装置の作製方法、半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007271683 2007-10-18
JP2007271683 2007-10-18
JP2008267510A JP5188355B2 (ja) 2007-10-18 2008-10-16 半導体装置の作製方法、半導体装置

Publications (3)

Publication Number Publication Date
JP2009117821A JP2009117821A (ja) 2009-05-28
JP2009117821A5 JP2009117821A5 (https=) 2011-11-04
JP5188355B2 true JP5188355B2 (ja) 2013-04-24

Family

ID=40562640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008267510A Expired - Fee Related JP5188355B2 (ja) 2007-10-18 2008-10-16 半導体装置の作製方法、半導体装置

Country Status (3)

Country Link
US (2) US7955994B2 (https=)
JP (1) JP5188355B2 (https=)
KR (1) KR101574140B1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312342B2 (en) 2010-12-16 2016-04-12 The Regents Of The University Of California Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion
JP2016119321A (ja) * 2013-04-17 2016-06-30 パナソニック株式会社 半導体装置
JP6494411B2 (ja) * 2014-06-24 2019-04-03 東京エレクトロン株式会社 成膜方法および成膜装置
KR102352290B1 (ko) * 2014-09-03 2022-01-18 삼성디스플레이 주식회사 플렉서블 표시패널
JP7805804B2 (ja) * 2022-01-28 2026-01-26 上海天馬微電子有限公司 光デバイスパッケージ
JP2024044126A (ja) * 2022-09-20 2024-04-02 キオクシア株式会社 半導体記憶装置および半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174927A (ja) * 1986-01-28 1987-07-31 Nec Corp 半導体装置
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
JP3283344B2 (ja) * 1993-07-09 2002-05-20 沖電気工業株式会社 半導体素子の製造方法
JP2682403B2 (ja) * 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
JPH07169833A (ja) * 1993-12-14 1995-07-04 Nec Corp 半導体装置及びその製造方法
JP3482725B2 (ja) 1995-02-23 2004-01-06 東亞合成株式会社 フッ素含有シリコン酸化膜の製造方法
JPH09139428A (ja) 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体装置
US5661334A (en) * 1996-01-16 1997-08-26 Micron Technology, Inc. Inter-metal dielectric structure which combines fluorine-doped glass and barrier layers
JP2991657B2 (ja) 1996-04-05 1999-12-20 キヤノン販売株式会社 成膜方法
US6157083A (en) * 1996-06-03 2000-12-05 Nec Corporation Fluorine doping concentrations in a multi-structure semiconductor device
JP3186998B2 (ja) 1996-06-03 2001-07-11 日本電気株式会社 半導体装置および半導体装置の製造方法
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6211096B1 (en) * 1997-03-21 2001-04-03 Lsi Logic Corporation Tunable dielectric constant oxide and method of manufacture
JPH1187340A (ja) * 1997-09-05 1999-03-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001085420A (ja) * 1999-09-09 2001-03-30 Toshiba Corp 半導体装置およびその製造方法
US6559594B2 (en) * 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US6835669B2 (en) * 2000-07-21 2004-12-28 Canon Sales Co., Inc. Film forming method, semiconductor device and semiconductor device manufacturing method
JP2002289609A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 半導体装置及びその製造方法
JP3967567B2 (ja) * 2001-07-30 2007-08-29 株式会社東芝 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US8278740B2 (en) 2012-10-02
JP2009117821A (ja) 2009-05-28
KR101574140B1 (ko) 2015-12-03
KR20090039607A (ko) 2009-04-22
US20090102027A1 (en) 2009-04-23
US20110175208A1 (en) 2011-07-21
US7955994B2 (en) 2011-06-07

Similar Documents

Publication Publication Date Title
JP6050279B2 (ja) 半導体基板の作製方法
JP5459987B2 (ja) 半導体基板及び半導体基板の作製方法、半導体装置、電子機器
US7851332B2 (en) Semiconductor device and method for manufacturing the same
US8368082B2 (en) Method for manufacturing semiconductor device, semiconductor device and electronic appliance
US8309429B2 (en) Method for manufacturing semiconductor substrate and semiconductor device
JP5188355B2 (ja) 半導体装置の作製方法、半導体装置
US8432021B2 (en) Manufacturing method of SOI substrate
JP2009038368A (ja) 半導体装置、電子機器、半導体装置の作製方法
KR20090045128A (ko) 반도체 기판 및 그 제작 방법, 및 반도체 장치의 제작 방법
KR20090037312A (ko) 반도체 장치의 제작 방법
US7790563B2 (en) Semiconductor device, electronic device and method for manufacturing semiconductor device
KR20090046734A (ko) 반도체 장치의 제작 방법
US8236630B2 (en) Manufacturing method of semiconductor device, semiconductor device, and electronic device
JP5307994B2 (ja) 半導体装置の作製方法
TWI575292B (zh) 電子裝置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110915

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110915

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120104

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130115

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130122

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160201

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5188355

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160201

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees