JP2009099716A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2009099716A JP2009099716A JP2007268864A JP2007268864A JP2009099716A JP 2009099716 A JP2009099716 A JP 2009099716A JP 2007268864 A JP2007268864 A JP 2007268864A JP 2007268864 A JP2007268864 A JP 2007268864A JP 2009099716 A JP2009099716 A JP 2009099716A
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- light emitting
- emitting element
- light
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】 発光装置は、透明基板21上に形成された、第1導電型窒化ガリウム系化合物半導体層22a、窒化ガリウム系化合物半導体から成る発光層22b及び第2導電型窒化ガリウム系化合物半導体層22cを含む半導体層22を有する発光素子20と、発光素子20が第1の主面側にあるように発光素子20が設置されたサブマウント基板25と、半導体層22が凹部の底面側にあるように発光素子20が凹部内に収容されるとともに、サブマウント基板25によって発光素子20を覆うようにサブマウント基板25が配置されたパッケージ26とを具備している。
【選択図】 図1
Description
21:透明基板
22:窒化ガリウム系化合物半導体層
22a:第1導電型窒化ガリウム系化合物半導体層
22b:発光層
22c:第2導電型窒化ガリウム系化合物半導体層
23:電極
24:配線導体
25:サブマウント基板
26:パッケージ
28:波長変換層
29:蛍光体
Claims (9)
- 透明基板上に形成された、第1導電型窒化ガリウム系化合物半導体層、窒化ガリウム系化合物半導体から成る発光層及び第2導電型窒化ガリウム系化合物半導体層を含む半導体層を有する発光素子と、前記発光素子が第1の主面側にあるように前記発光素子が設置されたサブマウント基板と、前記半導体層が凹部の底面側にあるように前記発光素子が凹部内に収容されるとともに、前記サブマウント基板によって前記発光素子を覆うように前記サブマウント基板が配置されたパッケージとを具備していることを特徴とする発光装置。
- 前記パッケージは前記凹部の底面に配線導体が形成されており、前記発光素子は前記半導体層の表面に電極が形成されており、前記電極と前記配線導体とが電気的に接続されることによって前記発光素子が前記パッケージ内にプリップチップ実装されていることを特徴とする請求項1記載の発光装置。
- 前記透明基板は導電性を有するものであり、前記発光素子は前記透明基板及び前記配線導体によって駆動電流が入出力されることを特徴とする請求項2記載の発光装置。
- 前記サブマウント基板は貫通孔が形成されており、前記貫通孔に前記透明基板が嵌め込まれることによって前記発光素子が前記サブマウント基板に設置されていることを特徴とする請求項1乃至3のいずれか記載の発光装置。
- 前記透明基板は前記半導体層と反対側の主面の外周部に段差が形成されており、前記段差が前記貫通孔に嵌め込まれていることを特徴とする請求項4記載の発光装置。
- 前記透明基板は平面視で前記半導体層よりも小面積となるように形成されており、前記透明基板の全体が前記貫通孔に嵌め込まれていることを特徴とする請求項4記載の発光装置。
- 前記サブマウント基板は前記発光素子から発光する光の波長に対して透明な材料からなることを特徴とする請求項1乃至6のいずれか記載の発光装置。
- 前記サブマウント基板は前記第1の主面と対向する第2の主面に蛍光体を含有する波長変換層が形成されていることを特徴とする請求項7記載の発光装置。
- 前記サブマウント基板は波長変換を行う蛍光体を含んでいることを特徴とする請求項7記載の発光装置。
Priority Applications (1)
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JP2007268864A JP5100301B2 (ja) | 2007-10-16 | 2007-10-16 | 発光装置 |
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JP2007268864A JP5100301B2 (ja) | 2007-10-16 | 2007-10-16 | 発光装置 |
Publications (2)
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JP2009099716A true JP2009099716A (ja) | 2009-05-07 |
JP5100301B2 JP5100301B2 (ja) | 2012-12-19 |
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JP2007268864A Expired - Fee Related JP5100301B2 (ja) | 2007-10-16 | 2007-10-16 | 発光装置 |
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JP (1) | JP5100301B2 (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287777A (ja) * | 2009-06-12 | 2010-12-24 | Koito Mfg Co Ltd | 発光モジュールおよび車両用前照灯 |
JP2011071404A (ja) * | 2009-09-28 | 2011-04-07 | Kyocera Corp | 発光装置および照明装置 |
CN102044537A (zh) * | 2009-10-22 | 2011-05-04 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
KR20110097233A (ko) * | 2010-02-25 | 2011-08-31 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
JP2012516047A (ja) * | 2009-01-22 | 2012-07-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法 |
JP2012528473A (ja) * | 2009-05-26 | 2012-11-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオードの製造方法 |
JP2014072212A (ja) * | 2012-09-27 | 2014-04-21 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2014207378A (ja) * | 2013-04-15 | 2014-10-30 | シチズン電子株式会社 | Led発光装置 |
JP2015057826A (ja) * | 2013-09-16 | 2015-03-26 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
US9312457B2 (en) | 2012-03-19 | 2016-04-12 | Kabushiki Kaisha Toshiba | Light emitting device and method for manufacturing the same |
KR20180137841A (ko) * | 2017-06-19 | 2018-12-28 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
WO2019045506A1 (ko) * | 2017-09-01 | 2019-03-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 광원 장치 |
WO2019147063A1 (ko) * | 2018-01-29 | 2019-08-01 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091657A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091656A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091658A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091663A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
WO2021010618A1 (ko) * | 2019-07-17 | 2021-01-21 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0818105A (ja) * | 1994-06-28 | 1996-01-19 | Mitsubishi Chem Corp | 発光装置 |
JPH0818106A (ja) * | 1994-06-28 | 1996-01-19 | Mitsubishi Chem Corp | 発光装置 |
JPH11177147A (ja) * | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | 光半導体モジュール、およびその製造方法 |
JP2005268708A (ja) * | 2004-03-22 | 2005-09-29 | Stanley Electric Co Ltd | 半導体発光装置及び製造方法 |
JP2007042985A (ja) * | 2005-08-05 | 2007-02-15 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその実装体 |
WO2007044472A2 (en) * | 2005-10-07 | 2007-04-19 | Osram Sylvania Inc. | Led with light transmissive heat sink |
JP2007207895A (ja) * | 2006-01-31 | 2007-08-16 | Kyocera Corp | 発光装置および発光モジュール |
-
2007
- 2007-10-16 JP JP2007268864A patent/JP5100301B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0818105A (ja) * | 1994-06-28 | 1996-01-19 | Mitsubishi Chem Corp | 発光装置 |
JPH0818106A (ja) * | 1994-06-28 | 1996-01-19 | Mitsubishi Chem Corp | 発光装置 |
JPH11177147A (ja) * | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | 光半導体モジュール、およびその製造方法 |
JP2005268708A (ja) * | 2004-03-22 | 2005-09-29 | Stanley Electric Co Ltd | 半導体発光装置及び製造方法 |
JP2007042985A (ja) * | 2005-08-05 | 2007-02-15 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその実装体 |
WO2007044472A2 (en) * | 2005-10-07 | 2007-04-19 | Osram Sylvania Inc. | Led with light transmissive heat sink |
JP2009513003A (ja) * | 2005-10-07 | 2009-03-26 | オスラム シルヴェニア インコーポレイテッド | 透光性のヒートシンクを有するled |
JP2007207895A (ja) * | 2006-01-31 | 2007-08-16 | Kyocera Corp | 発光装置および発光モジュール |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516047A (ja) * | 2009-01-22 | 2012-07-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法 |
US9806237B2 (en) | 2009-05-26 | 2017-10-31 | Osram Opto Semiconductors Gmbh | Method for producing a light-emitting diode |
JP2012528473A (ja) * | 2009-05-26 | 2012-11-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオードの製造方法 |
JP2010287777A (ja) * | 2009-06-12 | 2010-12-24 | Koito Mfg Co Ltd | 発光モジュールおよび車両用前照灯 |
US8500315B2 (en) | 2009-06-12 | 2013-08-06 | Koito Manufacturing Co., Ltd. | Light emitting module and automotive headlamp |
JP2011071404A (ja) * | 2009-09-28 | 2011-04-07 | Kyocera Corp | 発光装置および照明装置 |
CN102044537A (zh) * | 2009-10-22 | 2011-05-04 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
CN102044537B (zh) * | 2009-10-22 | 2012-11-28 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
KR20110097233A (ko) * | 2010-02-25 | 2011-08-31 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101646261B1 (ko) * | 2010-02-25 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US9312457B2 (en) | 2012-03-19 | 2016-04-12 | Kabushiki Kaisha Toshiba | Light emitting device and method for manufacturing the same |
JP2014072212A (ja) * | 2012-09-27 | 2014-04-21 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2014207378A (ja) * | 2013-04-15 | 2014-10-30 | シチズン電子株式会社 | Led発光装置 |
JP2015057826A (ja) * | 2013-09-16 | 2015-03-26 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
KR20180137841A (ko) * | 2017-06-19 | 2018-12-28 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
KR102388371B1 (ko) * | 2017-06-19 | 2022-04-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
WO2019045506A1 (ko) * | 2017-09-01 | 2019-03-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 광원 장치 |
US11367820B2 (en) | 2017-09-01 | 2022-06-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and light source device |
KR102017732B1 (ko) * | 2018-01-29 | 2019-09-03 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091658A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091663A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091656A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR102017733B1 (ko) * | 2018-01-29 | 2019-09-03 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
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KR102100752B1 (ko) * | 2018-01-29 | 2020-04-16 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20190091657A (ko) * | 2018-01-29 | 2019-08-07 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
WO2019147063A1 (ko) * | 2018-01-29 | 2019-08-01 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
WO2021010618A1 (ko) * | 2019-07-17 | 2021-01-21 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
KR20210009642A (ko) * | 2019-07-17 | 2021-01-27 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
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