JP2009088290A - 圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 - Google Patents
圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 Download PDFInfo
- Publication number
- JP2009088290A JP2009088290A JP2007256721A JP2007256721A JP2009088290A JP 2009088290 A JP2009088290 A JP 2009088290A JP 2007256721 A JP2007256721 A JP 2007256721A JP 2007256721 A JP2007256721 A JP 2007256721A JP 2009088290 A JP2009088290 A JP 2009088290A
- Authority
- JP
- Japan
- Prior art keywords
- film
- piezoelectric
- electrode film
- piezoelectric film
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 title claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000001301 oxygen Substances 0.000 claims abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 229910052745 lead Inorganic materials 0.000 claims abstract description 6
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 60
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000010408 film Substances 0.000 description 183
- 239000000976 ink Substances 0.000 description 50
- 230000008569 process Effects 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 12
- 238000001514 detection method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- -1 SiCN Chemical class 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000001041 dye based ink Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
【解決手段】上部電極膜と下部電極膜との間に圧電体膜が設けられてなる圧電アクチュエータの製造方法であって、下部電極膜上に一般式ABO3(但し、Aは、Pb及びBaのうちの少なくとも一方を含み、Bは、Zr及びTiのうち少なくとも一方を含む。)で示されるペロブスカイト型の結晶構造を有する圧電体膜を成膜した後、酸素雰囲気中で前記成膜時に前記圧電体膜に加えた温度以下で前記圧電体膜をアニール処理する工程を含むことを特徴とする圧電アクチュエータの製造方法を提供することにより、前記課題を解決する。
【選択図】 図2
Description
[評価実験1]
評価実験1では、スパッタ法を用いてPb(Zr,Ti)O3で示されるペロブスカイト構造を有する圧電体膜(PZT膜)を成膜した後、上部電極膜を形成する前に、所定の加熱温度(アニール温度)で30分間アニール処理を行った後の圧電体膜の圧電定数d31を測定した。その際、アニール処理が行われる雰囲気中の酸素濃度が0、3、7、10体積%である場合についてそれぞれ測定を行った。なお、圧電体膜を成膜したときの温度(成膜温度)は550℃である。
[評価実験2]
評価実験2では、アニール処理を行う工程と上部電極膜を形成する工程の順序を変えたときの圧電特性について評価を行った。具体的には、スパッタ法を用いてペロブスカイト構造を有する圧電体膜(PZT膜)を成膜した後、上部電極膜を形成する前にアニール処理を行う場合と、上部電極膜を形成した後にアニール処理を行う場合とについて、それぞれ圧電体膜の圧電定数d31を測定した。なお、いずれも酸素濃度が10体積%である雰囲気中でアニール処理を30分間行ったときの結果である。
Claims (6)
- 上部電極膜と下部電極膜との間に圧電体膜が設けられてなる圧電アクチュエータの製造方法であって、
下部電極膜上に一般式ABO3(但し、Aは、Pb及びBaのうちの少なくとも一方を含み、Bは、Zr及びTiのうち少なくとも一方を含む。)で示されるペロブスカイト型の結晶構造を有する圧電体膜を成膜した後、酸素雰囲気中で前記成膜時に前記圧電体膜に加えた温度以下で前記圧電体膜をアニール処理する工程を含むことを特徴とする圧電アクチュエータの製造方法。 - 前記圧電体膜をスパッタ法により成膜することを特徴とする請求項1に記載の圧電アクチュエータの製造方法。
- 前記酸素雰囲気の酸素濃度は10体積%以上であることを特徴とする請求項1又は請求項2に記載の圧電アクチュエータの製造方法。
- 前記圧電体膜上に上部電極膜が形成される前に前記アニール処理を行うことを特徴とする請求項1乃至請求項3のいずれか1項に記載の圧電アクチュエータの製造方法。
- 請求項1乃至請求項4のいずれか1項に記載の圧電アクチュエータの製造方法によって製造された圧電アクチュエータを備えたことを特徴とする液体吐出ヘッド。
- 請求項5に記載の液体吐出ヘッドを備えたことを特徴とする画像形成装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007256721A JP2009088290A (ja) | 2007-09-28 | 2007-09-28 | 圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 |
US12/239,576 US20090083958A1 (en) | 2007-09-28 | 2008-09-26 | Method of manufacturing piezoelectric actuator, liquid ejection head and image forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007256721A JP2009088290A (ja) | 2007-09-28 | 2007-09-28 | 圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009088290A true JP2009088290A (ja) | 2009-04-23 |
Family
ID=40506572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007256721A Pending JP2009088290A (ja) | 2007-09-28 | 2007-09-28 | 圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20090083958A1 (ja) |
JP (1) | JP2009088290A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013168397A (ja) * | 2012-02-14 | 2013-08-29 | Ricoh Co Ltd | 液滴吐出ヘッド、液滴吐出ヘッドの形成方法、およびインクジェット記録装置。 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6041527B2 (ja) * | 2012-05-16 | 2016-12-07 | キヤノン株式会社 | 液体吐出ヘッド |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002094023A (ja) * | 2000-07-10 | 2002-03-29 | Nec Corp | 強誘電体膜の形成方法と強誘電体容量素子の製造方法 |
JP2003298027A (ja) * | 2002-02-01 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ |
JP2004186647A (ja) * | 2002-12-06 | 2004-07-02 | Matsushita Electric Ind Co Ltd | 圧電薄膜素子の製造方法 |
JP2005186612A (ja) * | 2003-11-13 | 2005-07-14 | Canon Inc | 液体吐出ヘッドおよびその製造方法、並びに圧電素子の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0161785B1 (ko) * | 1995-04-29 | 1998-12-01 | 주승기 | 강유전체 박막소자의 제조방법 |
US6861356B2 (en) * | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
US6682772B1 (en) * | 2000-04-24 | 2004-01-27 | Ramtron International Corporation | High temperature deposition of Pt/TiOx for bottom electrodes |
-
2007
- 2007-09-28 JP JP2007256721A patent/JP2009088290A/ja active Pending
-
2008
- 2008-09-26 US US12/239,576 patent/US20090083958A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002094023A (ja) * | 2000-07-10 | 2002-03-29 | Nec Corp | 強誘電体膜の形成方法と強誘電体容量素子の製造方法 |
JP2003298027A (ja) * | 2002-02-01 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ |
JP2004186647A (ja) * | 2002-12-06 | 2004-07-02 | Matsushita Electric Ind Co Ltd | 圧電薄膜素子の製造方法 |
JP2005186612A (ja) * | 2003-11-13 | 2005-07-14 | Canon Inc | 液体吐出ヘッドおよびその製造方法、並びに圧電素子の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013168397A (ja) * | 2012-02-14 | 2013-08-29 | Ricoh Co Ltd | 液滴吐出ヘッド、液滴吐出ヘッドの形成方法、およびインクジェット記録装置。 |
Also Published As
Publication number | Publication date |
---|---|
US20090083958A1 (en) | 2009-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5031428B2 (ja) | 圧電アクチュエータの製造方法 | |
JP4911669B2 (ja) | 圧電アクチュエータ、液体吐出ヘッドの製造方法及び液体吐出ヘッド並びに画像形成装置 | |
JP2009239208A (ja) | 圧電アクチュエータの製造方法及び液体吐出ヘッド | |
JP5164244B2 (ja) | 圧電アクチュエータ、液体吐出ヘッド、画像形成装置、及び圧電アクチュエータの製造方法 | |
JP5382905B2 (ja) | 圧電素子の製造方法及び液体吐出ヘッドの製造方法 | |
JP2009113316A (ja) | 圧電アクチュエータの駆動方法及び液体吐出装置 | |
US8382257B2 (en) | Piezoelectric actuator, method of manufacturing piezoelectric actuator, liquid ejection head, method of manufacturing liquid ejection head and image forming apparatus | |
JP5063892B2 (ja) | 液体吐出ヘッドの製造方法 | |
JP5559975B2 (ja) | 液体吐出ヘッド、液体吐出ヘッドの製造方法及び画像形成装置 | |
JP3956950B2 (ja) | 吐出ヘッド駆動方法及び吐出ヘッド製造方法並びに液吐出装置 | |
JP5241017B2 (ja) | 液体吐出ヘッド及び液体吐出装置並びに画像形成装置 | |
JP2009083140A (ja) | 液体吐出ヘッド及びその製造方法 | |
JP2009231777A (ja) | 圧電アクチュエータ、液体吐出ヘッド及び液体吐出装置並びに圧電アクチュエータの駆動方法 | |
US8177336B2 (en) | Method of driving piezoelectric actuator and method of driving liquid ejection head | |
JP2009088290A (ja) | 圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 | |
JP2008155537A (ja) | 液体吐出ヘッド、液体吐出ヘッドの製造方法、及び画像形成装置 | |
JP4747389B2 (ja) | 液体吐出ヘッドの製造方法 | |
JP2005246961A (ja) | インクジェットヘッド及びその製造方法 | |
US8266773B2 (en) | Method of manufacturing a piezoelectric actuator | |
JP2006321188A (ja) | 液体吐出装置及び温度変化検出方法 | |
JP2007090647A (ja) | 液体吐出ヘッド | |
JP2007283729A (ja) | 液体吐出ヘッドの製造方法及び画像形成装置 | |
JP4933765B2 (ja) | 液体吐出ヘッドの製造方法 | |
JP5067946B2 (ja) | 液体吐出ヘッド及び液体吐出ヘッドの製造方法 | |
JP2010076370A (ja) | 圧電アクチュエータのメンテナンス方法、液体吐出ヘッドのメンテナンス方法、液体吐出装置、及び画像形成装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100208 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121012 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130213 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130308 |