JP2009081274A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009081274A JP2009081274A JP2007249526A JP2007249526A JP2009081274A JP 2009081274 A JP2009081274 A JP 2009081274A JP 2007249526 A JP2007249526 A JP 2007249526A JP 2007249526 A JP2007249526 A JP 2007249526A JP 2009081274 A JP2009081274 A JP 2009081274A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000011800 void material Substances 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】半導体装置1は、基板2と、半導体素子領域3と、電極部4と、ドレイン電極5とを備えている。基板2の第2主面2bには、凹部2cが形成されている。ドレイン電極5は、基板2の第2主面2bを覆うように形成されている。ドレイン電極5の一部は、凹部2cに埋設されている。ドレイン電極5の凹部2cに対応する領域には、各凹部2cに対して少なくとも1つの空隙6が形成されている。
【選択図】図1
Description
以下、本発明を縦型のMOSFETに適用した第1実施形態による半導体装置について、図面を参照して説明する。図1は、第1実施形態による半導体装置の部分断面図である。
次に、上述した第1実施形態の一部を変更した、第2実施形態について、図面を参照して説明する。図5は、第2実施形態による半導体装置の部分断面図である。尚、第1実施形態と同じ構成には、同じ符号を付けて説明を省略する。
次に、上述した第1実施形態の一部を変更した、第3実施形態について、図面を参照して説明する。図6は、第3実施形態による半導体装置の部分断面図である。尚、第1実施形態と同じ構成には、同じ符号を付けて説明を省略する。
次に、本発明をトレンチゲート構造を有するMOSFETに適用した第4実施形態について、図面を参照して説明する。図7は、第4実施形態による半導体装置の部分断面図である。尚、第1実施形態と同じ構成には、同じ符号を付けて説明を省略する。
次に、第1実施形態の一部を変更した第5実施形態について、図面を参照して説明する。図8は、第5実施形態による半導体装置の部分断面図である。尚、第1実施形態と同じ構成には、同じ符号を付けて説明を省略する。
2、2C 基板
2a、2Ca 第1主面
2b、2Cb 第2主面
2c、2Cc 凹部
3 半導体素子領域
4、4C 電極部
5、5A、5B、5C ドレイン電極
6、6A、6B、6C 空隙
7、7C MOSFET
10、10C ドレイン領域
11 ドリフト領域
12、12C ベース領域
13、13C ソース領域
15、15C ゲート絶縁膜
16、16C ゲート電極
17、17C 層間絶縁膜
18、18C ソース電極
Claims (3)
- 半導体素子を含み、一方の主面に凹部が形成された半導体部と、
少なくとも一部が前記凹部に埋設された金属部材とを備え、
前記金属部材の前記凹部に対応する領域には、空隙が形成されていることを特徴とする半導体装置。 - 前記凹部は、前記一方の主面に複数形成されており、
隣り合う凹部の間隔が、前記半導体部の中央側よりも側方において狭くなっていることを特徴とする請求項1に記載の半導体装置。 - 前記空隙は、各凹部に複数形成されており、
前記半導体部の他方の主面には、電極部が形成されており、前記金属部材は、前記凹部の底面及び側面と低抵抗接触し、
前記凹部が形成されていない前記一方の主面にも前記金属部材が形成されていることを特徴とする請求項1または請求項2のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007249526A JP4973418B2 (ja) | 2007-09-26 | 2007-09-26 | 半導体装置 |
US12/169,207 US8053830B2 (en) | 2007-09-26 | 2008-07-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007249526A JP4973418B2 (ja) | 2007-09-26 | 2007-09-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009081274A true JP2009081274A (ja) | 2009-04-16 |
JP4973418B2 JP4973418B2 (ja) | 2012-07-11 |
Family
ID=40470773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007249526A Active JP4973418B2 (ja) | 2007-09-26 | 2007-09-26 | 半導体装置 |
Country Status (2)
Country | Link |
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US (1) | US8053830B2 (ja) |
JP (1) | JP4973418B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103208A (ja) * | 2008-10-22 | 2010-05-06 | Denso Corp | 半導体装置 |
WO2019017163A1 (ja) * | 2017-07-21 | 2019-01-24 | 株式会社村田製作所 | 半導体装置 |
WO2022162912A1 (ja) * | 2021-01-29 | 2022-08-04 | サンケン電気株式会社 | 半導体装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010003960A (ja) | 2008-06-23 | 2010-01-07 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
KR101039142B1 (ko) * | 2008-12-23 | 2011-06-03 | 주식회사 하이닉스반도체 | 리세스 채널을 갖는 반도체 소자의 제조방법 |
KR20140009731A (ko) * | 2012-07-12 | 2014-01-23 | 삼성전자주식회사 | 방열부를 포함하는 반도체 칩 및 그 반도체 칩 제조 방법 |
KR101554913B1 (ko) * | 2013-10-17 | 2015-09-23 | (주)실리콘화일 | 방열 기능을 갖는 반도체 장치 및 이를 구비하는 전자 기기 |
JP6817895B2 (ja) * | 2017-05-24 | 2021-01-20 | 株式会社東芝 | 半導体装置 |
US10896887B2 (en) * | 2018-05-10 | 2021-01-19 | Infineon Technologies Ag | Stress relieving structure for semiconductor device |
CN113066850B (zh) * | 2020-01-02 | 2022-11-15 | 比亚迪半导体股份有限公司 | 逆导型igbt器件及制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06310547A (ja) * | 1993-02-25 | 1994-11-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH11163205A (ja) * | 1997-12-01 | 1999-06-18 | Nec Corp | 半導体装置 |
JP2001044219A (ja) * | 1999-07-30 | 2001-02-16 | Toshiba Corp | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01183166A (ja) | 1988-01-18 | 1989-07-20 | Rohm Co Ltd | 高耐圧型整流ダイオード |
JP4167313B2 (ja) | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
US6104062A (en) | 1998-06-30 | 2000-08-15 | Intersil Corporation | Semiconductor device having reduced effective substrate resistivity and associated methods |
JP3791459B2 (ja) | 2002-05-27 | 2006-06-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2004296567A (ja) * | 2003-03-26 | 2004-10-21 | Renesas Technology Corp | 半導体装置およびその製造方法 |
-
2007
- 2007-09-26 JP JP2007249526A patent/JP4973418B2/ja active Active
-
2008
- 2008-07-08 US US12/169,207 patent/US8053830B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06310547A (ja) * | 1993-02-25 | 1994-11-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH11163205A (ja) * | 1997-12-01 | 1999-06-18 | Nec Corp | 半導体装置 |
JP2001044219A (ja) * | 1999-07-30 | 2001-02-16 | Toshiba Corp | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103208A (ja) * | 2008-10-22 | 2010-05-06 | Denso Corp | 半導体装置 |
WO2019017163A1 (ja) * | 2017-07-21 | 2019-01-24 | 株式会社村田製作所 | 半導体装置 |
WO2022162912A1 (ja) * | 2021-01-29 | 2022-08-04 | サンケン電気株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US8053830B2 (en) | 2011-11-08 |
US20090079085A1 (en) | 2009-03-26 |
JP4973418B2 (ja) | 2012-07-11 |
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