JP2009054720A - 処理装置 - Google Patents

処理装置 Download PDF

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Publication number
JP2009054720A
JP2009054720A JP2007218874A JP2007218874A JP2009054720A JP 2009054720 A JP2009054720 A JP 2009054720A JP 2007218874 A JP2007218874 A JP 2007218874A JP 2007218874 A JP2007218874 A JP 2007218874A JP 2009054720 A JP2009054720 A JP 2009054720A
Authority
JP
Japan
Prior art keywords
processing
mounting table
substrate
processed
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007218874A
Other languages
English (en)
Japanese (ja)
Inventor
Toshihiro Tojo
利洋 東条
Kazuo Sasaki
和男 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007218874A priority Critical patent/JP2009054720A/ja
Priority to TW097132207A priority patent/TW200929356A/zh
Priority to CNA2008102140114A priority patent/CN101373707A/zh
Priority to KR1020080082288A priority patent/KR20090021097A/ko
Publication of JP2009054720A publication Critical patent/JP2009054720A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007218874A 2007-08-24 2007-08-24 処理装置 Pending JP2009054720A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007218874A JP2009054720A (ja) 2007-08-24 2007-08-24 処理装置
TW097132207A TW200929356A (en) 2007-08-24 2008-08-22 Processing device
CNA2008102140114A CN101373707A (zh) 2007-08-24 2008-08-22 处理装置
KR1020080082288A KR20090021097A (ko) 2007-08-24 2008-08-22 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007218874A JP2009054720A (ja) 2007-08-24 2007-08-24 処理装置

Publications (1)

Publication Number Publication Date
JP2009054720A true JP2009054720A (ja) 2009-03-12

Family

ID=40447793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007218874A Pending JP2009054720A (ja) 2007-08-24 2007-08-24 処理装置

Country Status (4)

Country Link
JP (1) JP2009054720A (ko)
KR (1) KR20090021097A (ko)
CN (1) CN101373707A (ko)
TW (1) TW200929356A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010304A (ja) * 2008-06-25 2010-01-14 Tokyo Electron Ltd 処理装置
JP2010135424A (ja) * 2008-12-02 2010-06-17 Tokyo Electron Ltd プラズマ処理装置
WO2016027734A1 (ja) * 2014-08-22 2016-02-25 東京エレクトロン株式会社 基板処理装置
KR20230016584A (ko) 2021-07-26 2023-02-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
KR20230016585A (ko) 2021-07-26 2023-02-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6378942B2 (ja) * 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
KR102114891B1 (ko) * 2019-11-18 2020-05-26 주식회사 기가레인 플라즈마 처리 장치
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN111584338B (zh) * 2020-05-11 2022-06-10 深圳市华星光电半导体显示技术有限公司 一种刻蚀装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010304A (ja) * 2008-06-25 2010-01-14 Tokyo Electron Ltd 処理装置
JP2010135424A (ja) * 2008-12-02 2010-06-17 Tokyo Electron Ltd プラズマ処理装置
WO2016027734A1 (ja) * 2014-08-22 2016-02-25 東京エレクトロン株式会社 基板処理装置
KR20230016584A (ko) 2021-07-26 2023-02-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
KR20230016585A (ko) 2021-07-26 2023-02-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Also Published As

Publication number Publication date
TW200929356A (en) 2009-07-01
CN101373707A (zh) 2009-02-25
KR20090021097A (ko) 2009-02-27

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