JP2009032927A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009032927A JP2009032927A JP2007195818A JP2007195818A JP2009032927A JP 2009032927 A JP2009032927 A JP 2009032927A JP 2007195818 A JP2007195818 A JP 2007195818A JP 2007195818 A JP2007195818 A JP 2007195818A JP 2009032927 A JP2009032927 A JP 2009032927A
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- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 27
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000003321 amplification Effects 0.000 abstract description 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 108091006146 Channels Proteins 0.000 description 32
- 239000012535 impurity Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】ゲート領域を第1の多角形状とこれより小さい第2の多角形状を有する網状パターンとし、その内側にソース領域およびドレイン領域を配置する。これによりゲート領域ストライプ状に配置した構造と比較して、順伝達アドミタンスgmを増加させることができる。またゲート領域を格子状に配置した場合と比較して、所定の耐圧を維持しつつ、入力容量Cissの増加による順伝達特性(増幅特性)の劣化を最小限に抑えることができる。
【選択図】 図1
Description
3 分離領域
4 チャネル領域
5 ソース領域
6 ドレイン領域
7 ゲート領域
71 八角パターン(ゲート領域)
72 四角パターン(ゲート領域)
9 絶縁膜
10 基板
11 ソース電極
12 ドレイン電極
11p ソースパッド電極
12p ドレインパッド電極
13 ゲート電極
21 p+型半導体基板
22 p型エピタキシャル層
23 分離領域
24 チャネル領域
25 ソース領域
26 ドレイン領域
27 ゲート領域
29 ソース電極
30 ドレイン電極
31 ゲート電極
40 絶縁膜
100、200 接合型FET(J−FET)
Claims (8)
- バックゲート領域となる一導電型半導体基板と、
該半導体基板表面に設けられた逆導電型のチャネル領域と、
該チャネル領域表面に設けられ、第1の多角形および該第1の多角形より小さい第2の多角形を交互に配置した網状パターンを有する一導電型のゲート領域と、
前記ゲート領域に囲まれた前記チャネル領域表面にそれぞれ島状に設けられた逆導電型のソース領域およびドレイン領域と、
を具備することを特徴とする半導体装置。 - 前記ドレイン領域は前記第1の多角形の内側に設けられ、前記ソース領域は前記第2の多角形の内側に設けられることを特徴とする請求項1に記載の半導体装置。
- 前記ドレイン領域から直近の前記ゲート領域までの距離は、前記ソース領域から直近の前記ゲート電極までの距離より大きいことを特徴とする請求項1に記載の半導体装置。
- 前記第1の多角形は、他の第1の多角形および前記第2の多角形と隣接し、前記第2の多角形は、前記第1の多角形と隣接することを特徴とする請求項1に記載の半導体装置。
- 前記第1の多角形は、長辺と短辺とからなり前記長辺は前記第2の多角形と隣接し、短辺は他の第1の多角形と隣接することを特徴とする請求項1に記載の半導体装置。
- 前記第1の多角形は八角形状であり、前記第2の多角形は四角形状であることを特徴とする請求項1に記載の半導体装置。
- 隣り合う前記ドレイン領域上に設けられ該ドレイン領域と接続するドレイン電極と、
隣り合う前記ソース領域上に設けられて該ソース領域と接続するソース電極と、
前記一導電型半導体基板裏面に設けられたゲート電極と、を有することを特徴とする請求項1に記載の半導体装置。 - 前記ドレイン電極およびソース電極は、ストライプ状であることを特徴とする請求項7に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007195818A JP5307991B2 (ja) | 2007-07-27 | 2007-07-27 | 半導体装置 |
US12/146,004 US7812377B2 (en) | 2007-07-27 | 2008-06-25 | Semiconductor device |
KR1020080070192A KR101004209B1 (ko) | 2007-07-27 | 2008-07-18 | 반도체 장치 |
CN2008101316824A CN101355106B (zh) | 2007-07-27 | 2008-07-23 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007195818A JP5307991B2 (ja) | 2007-07-27 | 2007-07-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009032927A true JP2009032927A (ja) | 2009-02-12 |
JP5307991B2 JP5307991B2 (ja) | 2013-10-02 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007195818A Active JP5307991B2 (ja) | 2007-07-27 | 2007-07-27 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7812377B2 (ja) |
JP (1) | JP5307991B2 (ja) |
KR (1) | KR101004209B1 (ja) |
CN (1) | CN101355106B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012174943A (ja) * | 2011-02-23 | 2012-09-10 | Sony Corp | 電界効果トランジスタ、半導体スイッチ回路、および通信機器 |
JP2013520000A (ja) * | 2010-02-10 | 2013-05-30 | フォルシュングスフェアブント ベルリン エー ファウ | 高い電流許容能力を有するラテラル半導体構成エレメント用のスケーラビリティを有する構造 |
JP2013528930A (ja) * | 2010-04-13 | 2013-07-11 | ジーエーエヌ システムズ インコーポレイテッド | アイランドトポロジを用いる高密度窒化ガリウム装置 |
US8987838B2 (en) | 2013-06-14 | 2015-03-24 | Nichia Corporation | Field-effect transistor |
US9508797B2 (en) | 2009-08-04 | 2016-11-29 | Gan Systems Inc. | Gallium nitride power devices using island topography |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101796562A (zh) * | 2008-07-02 | 2010-08-04 | 富士电机控股株式会社 | 面发光显示装置 |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
CA2769940C (en) * | 2009-08-04 | 2016-04-26 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
KR102052307B1 (ko) * | 2011-11-09 | 2019-12-04 | 스카이워크스 솔루션즈, 인코포레이티드 | 전계 효과 트랜지스터 구조 및 관련된 무선-주파수 스위치 |
KR101837877B1 (ko) * | 2013-10-29 | 2018-03-12 | 갠 시스템즈 인크. | 대면적 질화물 반도체 디바이스들을 위한 장애 허용 설계 |
US10147796B1 (en) | 2017-05-26 | 2018-12-04 | Stmicroelectronics Design And Application S.R.O. | Transistors with dissimilar square waffle gate patterns |
US10403624B2 (en) * | 2017-05-26 | 2019-09-03 | Stmicroelectronics Design And Application S.R.O. | Transistors with octagon waffle gate patterns |
FR3084965B1 (fr) * | 2018-08-10 | 2020-10-30 | Commissariat Energie Atomique | Transistor a effet de champ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5764976A (en) * | 1980-10-07 | 1982-04-20 | Sanyo Electric Co Ltd | Junction type field effect transistor |
JPS58130576A (ja) * | 1983-01-28 | 1983-08-04 | Nec Corp | 接合型電界効果トランジスタ |
JPH02165678A (ja) * | 1988-12-20 | 1990-06-26 | Matsushita Electron Corp | Mosトランジスタ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2713205B2 (ja) | 1995-02-21 | 1998-02-16 | 日本電気株式会社 | 半導体装置 |
JP2000208759A (ja) * | 1999-01-12 | 2000-07-28 | Rohm Co Ltd | 半導体装置 |
US6740907B2 (en) * | 2002-10-04 | 2004-05-25 | Rohm Co., Ltd. | Junction field-effect transistor |
JP4696444B2 (ja) * | 2003-11-14 | 2011-06-08 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
TWI228297B (en) * | 2003-12-12 | 2005-02-21 | Richtek Techohnology Corp | Asymmetrical cellular metal-oxide semiconductor transistor array |
TW200642268A (en) * | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
US7449762B1 (en) * | 2006-04-07 | 2008-11-11 | Wide Bandgap Llc | Lateral epitaxial GaN metal insulator semiconductor field effect transistor |
-
2007
- 2007-07-27 JP JP2007195818A patent/JP5307991B2/ja active Active
-
2008
- 2008-06-25 US US12/146,004 patent/US7812377B2/en active Active
- 2008-07-18 KR KR1020080070192A patent/KR101004209B1/ko not_active IP Right Cessation
- 2008-07-23 CN CN2008101316824A patent/CN101355106B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5764976A (en) * | 1980-10-07 | 1982-04-20 | Sanyo Electric Co Ltd | Junction type field effect transistor |
JPS58130576A (ja) * | 1983-01-28 | 1983-08-04 | Nec Corp | 接合型電界効果トランジスタ |
JPH02165678A (ja) * | 1988-12-20 | 1990-06-26 | Matsushita Electron Corp | Mosトランジスタ |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508797B2 (en) | 2009-08-04 | 2016-11-29 | Gan Systems Inc. | Gallium nitride power devices using island topography |
JP2013520000A (ja) * | 2010-02-10 | 2013-05-30 | フォルシュングスフェアブント ベルリン エー ファウ | 高い電流許容能力を有するラテラル半導体構成エレメント用のスケーラビリティを有する構造 |
JP2013528930A (ja) * | 2010-04-13 | 2013-07-11 | ジーエーエヌ システムズ インコーポレイテッド | アイランドトポロジを用いる高密度窒化ガリウム装置 |
JP2012174943A (ja) * | 2011-02-23 | 2012-09-10 | Sony Corp | 電界効果トランジスタ、半導体スイッチ回路、および通信機器 |
US8987838B2 (en) | 2013-06-14 | 2015-03-24 | Nichia Corporation | Field-effect transistor |
Also Published As
Publication number | Publication date |
---|---|
US20090026506A1 (en) | 2009-01-29 |
JP5307991B2 (ja) | 2013-10-02 |
CN101355106A (zh) | 2009-01-28 |
US7812377B2 (en) | 2010-10-12 |
CN101355106B (zh) | 2010-06-16 |
KR20090012092A (ko) | 2009-02-02 |
KR101004209B1 (ko) | 2010-12-27 |
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