US7812377B2 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- US7812377B2 US7812377B2 US12/146,004 US14600408A US7812377B2 US 7812377 B2 US7812377 B2 US 7812377B2 US 14600408 A US14600408 A US 14600408A US 7812377 B2 US7812377 B2 US 7812377B2
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- US
- United States
- Prior art keywords
- region
- regions
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- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 26
- 230000003321 amplification Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 3
- 108091006146 Channels Proteins 0.000 description 34
- 238000002955 isolation Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 7
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-195818 | 2007-07-27 | ||
JP2007195818A JP5307991B2 (en) | 2007-07-27 | 2007-07-27 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20090026506A1 US20090026506A1 (en) | 2009-01-29 |
US7812377B2 true US7812377B2 (en) | 2010-10-12 |
Family
ID=40294479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/146,004 Active 2028-08-13 US7812377B2 (en) | 2007-07-27 | 2008-06-25 | Semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US7812377B2 (en) |
JP (1) | JP5307991B2 (en) |
KR (1) | KR101004209B1 (en) |
CN (1) | CN101355106B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160133645A1 (en) * | 2011-11-09 | 2016-05-12 | Skyworks Solutions, Inc. | Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010001467A1 (en) * | 2008-07-02 | 2010-01-07 | 富士電機ホールディングス株式会社 | Surface-emitting display device |
WO2015061881A1 (en) * | 2013-10-29 | 2015-05-07 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
KR20120041237A (en) * | 2009-08-04 | 2012-04-30 | 갠 시스템즈 인크. | Island matrixed gallium nitride microwave and power switching transistors |
US9029866B2 (en) | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
DE102010001788A1 (en) * | 2010-02-10 | 2011-08-11 | Forschungsverbund Berlin e.V., 12489 | Scalable structure for lateral semiconductor devices with high current carrying capacity |
US8791508B2 (en) * | 2010-04-13 | 2014-07-29 | Gan Systems Inc. | High density gallium nitride devices using island topology |
JP5879694B2 (en) * | 2011-02-23 | 2016-03-08 | ソニー株式会社 | Field effect transistor, semiconductor switch circuit, and communication device |
JP6217158B2 (en) | 2013-06-14 | 2017-10-25 | 日亜化学工業株式会社 | Field effect transistor |
US10147796B1 (en) | 2017-05-26 | 2018-12-04 | Stmicroelectronics Design And Application S.R.O. | Transistors with dissimilar square waffle gate patterns |
US10403624B2 (en) * | 2017-05-26 | 2019-09-03 | Stmicroelectronics Design And Application S.R.O. | Transistors with octagon waffle gate patterns |
FR3084965B1 (en) | 2018-08-10 | 2020-10-30 | Commissariat Energie Atomique | FIELD EFFECT TRANSISTOR |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227900A (en) | 1995-02-21 | 1996-09-03 | Nec Corp | Semiconductor device |
US6264167B1 (en) * | 1999-01-12 | 2001-07-24 | Rohm Co., Ltd. | Semiconductor device |
US6740907B2 (en) * | 2002-10-04 | 2004-05-25 | Rohm Co., Ltd. | Junction field-effect transistor |
US7002192B2 (en) * | 2003-12-12 | 2006-02-21 | Richtek Technology Corp. | Area efficient asymmetric cellular CMOS array |
US20060255403A1 (en) * | 2005-04-28 | 2006-11-16 | Sanyo Electric Co., Ltd. | Compound semiconductor switch circuit device |
US7449762B1 (en) * | 2006-04-07 | 2008-11-11 | Wide Bandgap Llc | Lateral epitaxial GaN metal insulator semiconductor field effect transistor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5764976A (en) * | 1980-10-07 | 1982-04-20 | Sanyo Electric Co Ltd | Junction type field effect transistor |
JPS58130576A (en) * | 1983-01-28 | 1983-08-04 | Nec Corp | Junction type field effect transistor |
JPH02165678A (en) * | 1988-12-20 | 1990-06-26 | Matsushita Electron Corp | Mos transistor |
JP4696444B2 (en) * | 2003-11-14 | 2011-06-08 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
-
2007
- 2007-07-27 JP JP2007195818A patent/JP5307991B2/en active Active
-
2008
- 2008-06-25 US US12/146,004 patent/US7812377B2/en active Active
- 2008-07-18 KR KR1020080070192A patent/KR101004209B1/en not_active IP Right Cessation
- 2008-07-23 CN CN2008101316824A patent/CN101355106B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227900A (en) | 1995-02-21 | 1996-09-03 | Nec Corp | Semiconductor device |
US6264167B1 (en) * | 1999-01-12 | 2001-07-24 | Rohm Co., Ltd. | Semiconductor device |
US6740907B2 (en) * | 2002-10-04 | 2004-05-25 | Rohm Co., Ltd. | Junction field-effect transistor |
US7002192B2 (en) * | 2003-12-12 | 2006-02-21 | Richtek Technology Corp. | Area efficient asymmetric cellular CMOS array |
US20060255403A1 (en) * | 2005-04-28 | 2006-11-16 | Sanyo Electric Co., Ltd. | Compound semiconductor switch circuit device |
US7449762B1 (en) * | 2006-04-07 | 2008-11-11 | Wide Bandgap Llc | Lateral epitaxial GaN metal insulator semiconductor field effect transistor |
Non-Patent Citations (1)
Title |
---|
Hatfield, C.W. et al. (1998). "DC I-V Characteristics and RF Performance of a 4H-SiC JFET at 773 K," IEEE Transactions on Electron Devices. 45.(9):2072-2074. |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160133645A1 (en) * | 2011-11-09 | 2016-05-12 | Skyworks Solutions, Inc. | Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance |
US10014321B2 (en) * | 2011-11-09 | 2018-07-03 | Skyworks Solutions, Inc. | Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance |
US20180308862A1 (en) * | 2011-11-09 | 2018-10-25 | Skyworks Solutions, Inc. | Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance |
Also Published As
Publication number | Publication date |
---|---|
CN101355106A (en) | 2009-01-28 |
JP5307991B2 (en) | 2013-10-02 |
KR20090012092A (en) | 2009-02-02 |
US20090026506A1 (en) | 2009-01-29 |
JP2009032927A (en) | 2009-02-12 |
KR101004209B1 (en) | 2010-12-27 |
CN101355106B (en) | 2010-06-16 |
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Legal Events
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Owner name: SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MATSUMIYA, YOSHIAKI;HATAMOTO, MITSUO;REEL/FRAME:021525/0474;SIGNING DATES FROM 20080821 TO 20080825 Owner name: SANYO SEMICONDUCTOR CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MATSUMIYA, YOSHIAKI;HATAMOTO, MITSUO;REEL/FRAME:021525/0474;SIGNING DATES FROM 20080821 TO 20080825 Owner name: SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MATSUMIYA, YOSHIAKI;HATAMOTO, MITSUO;SIGNING DATES FROM 20080821 TO 20080825;REEL/FRAME:021525/0474 Owner name: SANYO SEMICONDUCTOR CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MATSUMIYA, YOSHIAKI;HATAMOTO, MITSUO;SIGNING DATES FROM 20080821 TO 20080825;REEL/FRAME:021525/0474 |
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