JP2009013186A - 被覆蛍光体粒子、被覆蛍光体粒子の製造方法、蛍光体含有組成物、発光装置、画像表示装置、および照明装置 - Google Patents

被覆蛍光体粒子、被覆蛍光体粒子の製造方法、蛍光体含有組成物、発光装置、画像表示装置、および照明装置 Download PDF

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Publication number
JP2009013186A
JP2009013186A JP2007172930A JP2007172930A JP2009013186A JP 2009013186 A JP2009013186 A JP 2009013186A JP 2007172930 A JP2007172930 A JP 2007172930A JP 2007172930 A JP2007172930 A JP 2007172930A JP 2009013186 A JP2009013186 A JP 2009013186A
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phosphor
light
coated
glass
phosphor particles
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JP2007172930A
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Japanese (ja)
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JP2009013186A5 (enExample
Inventor
Nobu Watanabe
展 渡邉
Hidehiko Obara
秀彦 小原
Naoto Kijima
直人 木島
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Priority to JP2007172930A priority Critical patent/JP2009013186A/ja
Publication of JP2009013186A publication Critical patent/JP2009013186A/ja
Publication of JP2009013186A5 publication Critical patent/JP2009013186A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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JP2007172930A 2007-06-29 2007-06-29 被覆蛍光体粒子、被覆蛍光体粒子の製造方法、蛍光体含有組成物、発光装置、画像表示装置、および照明装置 Pending JP2009013186A (ja)

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JP2007172930A JP2009013186A (ja) 2007-06-29 2007-06-29 被覆蛍光体粒子、被覆蛍光体粒子の製造方法、蛍光体含有組成物、発光装置、画像表示装置、および照明装置

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JP2007172930A JP2009013186A (ja) 2007-06-29 2007-06-29 被覆蛍光体粒子、被覆蛍光体粒子の製造方法、蛍光体含有組成物、発光装置、画像表示装置、および照明装置

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JP2009013186A5 JP2009013186A5 (enExample) 2010-07-29

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009102524A (ja) * 2007-10-24 2009-05-14 Nichia Corp 蛍光体及びそれを用いた蛍光ランプ
WO2011126118A1 (ja) * 2010-04-09 2011-10-13 日立化成工業株式会社 球状蛍光体、波長変換型太陽電池封止材、太陽電池モジュール及びこれらの製造方法
WO2012077485A1 (ja) * 2010-12-06 2012-06-14 日立化成工業株式会社 球状蛍光体、波長変換型太陽電池封止材、太陽電池モジュール及びこれらの製造方法
WO2012077656A1 (ja) 2010-12-09 2012-06-14 三井金属鉱業株式会社 ＺｎＯ化合物被覆硫黄含有蛍光体
JP2012136686A (ja) * 2010-12-07 2012-07-19 Sharp Corp 波長変換部材、発光装置、照明装置、車両用前照灯および製造方法
JP2013536283A (ja) * 2010-08-14 2013-09-19 ソウル セミコンダクター カンパニー リミテッド 表面改質されたシリケート発光体
JP2013539598A (ja) * 2010-08-11 2013-10-24 キユーデイー・ビジヨン・インコーポレーテツド 量子ドット系照明
US9166119B2 (en) 2011-04-05 2015-10-20 Mitsui Mining & Smelting Co., Ltd. Light-emitting device
US9196785B2 (en) 2010-08-14 2015-11-24 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified quantum dot luminophores
JP2015224299A (ja) * 2014-05-28 2015-12-14 シャープ株式会社 波長変換部材、発光装置、および波長変換部材の製造方法
US9234129B2 (en) 2010-08-14 2016-01-12 Seoul Semiconductor Co., Ltd. Surface-modified quantum dot luminophores
KR20160114640A (ko) 2014-03-27 2016-10-05 미쓰이금속광업주식회사 형광체 및 그 용도
US9614129B2 (en) 2010-08-14 2017-04-04 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified luminophores
WO2020054351A1 (ja) * 2018-09-12 2020-03-19 デンカ株式会社 蛍光体及び発光装置
JP2020059764A (ja) * 2018-10-04 2020-04-16 デンカ株式会社 複合体、発光装置および複合体の製造方法
JP2020066677A (ja) * 2018-10-24 2020-04-30 デンカ株式会社 表面被覆蛍光体粒子、複合体、発光装置および表面被覆蛍光体粒子の製造方法
CN111602256A (zh) * 2018-01-22 2020-08-28 亮锐控股有限公司 用于发光装置的经涂布的波长转换材料
US10899965B2 (en) 2015-03-30 2021-01-26 Nichia Corporation Fluorescent material particles, method for producing the same, and light emitting device
KR20210080427A (ko) 2018-10-24 2021-06-30 덴카 주식회사 표면 피복 형광체 입자, 복합체 및 발광 장치
JP2024179681A (ja) * 2023-06-15 2024-12-26 エルティーアイ株式会社 蓄光粒子および蓄光粒子の製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0420587A (ja) * 1990-05-14 1992-01-24 Sumitomo Chem Co Ltd 蛍光体およびｅｌ素子
JPH04356584A (ja) * 1990-08-07 1992-12-10 Sumitomo Chem Co Ltd Ｅｌランプ用螢光体
JP2001031446A (ja) * 1999-07-22 2001-02-06 Okuno Chem Ind Co Ltd 低融点ガラス組成物
JP2001261369A (ja) * 2000-03-22 2001-09-26 Central Glass Co Ltd 低融点ガラス組成物
JP2002211935A (ja) * 2001-01-16 2002-07-31 National Institute Of Advanced Industrial & Technology 超微粒子分散ガラス及びこれを用いた表示素子
JP2003321226A (ja) * 2002-02-27 2003-11-11 National Institute Of Advanced Industrial & Technology 半導体超微粒子含有シリカ系ガラス粒子材料およびデバイス
JP2005011933A (ja) * 2003-06-18 2005-01-13 Asahi Glass Co Ltd 発光ダイオード素子
JP2006052345A (ja) * 2004-08-13 2006-02-23 Rohm Co Ltd 発光色変換部材およびそれを用いた半導体発光装置
JP2006312568A (ja) * 2005-05-09 2006-11-16 Okuno Chem Ind Co Ltd 低融点ガラス組成物
JP2007123410A (ja) * 2005-10-26 2007-05-17 Asahi Glass Co Ltd ガラス被覆発光ダイオード素子

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0420587A (ja) * 1990-05-14 1992-01-24 Sumitomo Chem Co Ltd 蛍光体およびｅｌ素子
JPH04356584A (ja) * 1990-08-07 1992-12-10 Sumitomo Chem Co Ltd Ｅｌランプ用螢光体
JP2001031446A (ja) * 1999-07-22 2001-02-06 Okuno Chem Ind Co Ltd 低融点ガラス組成物
JP2001261369A (ja) * 2000-03-22 2001-09-26 Central Glass Co Ltd 低融点ガラス組成物
JP2002211935A (ja) * 2001-01-16 2002-07-31 National Institute Of Advanced Industrial & Technology 超微粒子分散ガラス及びこれを用いた表示素子
JP2003321226A (ja) * 2002-02-27 2003-11-11 National Institute Of Advanced Industrial & Technology 半導体超微粒子含有シリカ系ガラス粒子材料およびデバイス
JP2005011933A (ja) * 2003-06-18 2005-01-13 Asahi Glass Co Ltd 発光ダイオード素子
JP2006052345A (ja) * 2004-08-13 2006-02-23 Rohm Co Ltd 発光色変換部材およびそれを用いた半導体発光装置
JP2006312568A (ja) * 2005-05-09 2006-11-16 Okuno Chem Ind Co Ltd 低融点ガラス組成物
JP2007123410A (ja) * 2005-10-26 2007-05-17 Asahi Glass Co Ltd ガラス被覆発光ダイオード素子

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009102524A (ja) * 2007-10-24 2009-05-14 Nichia Corp 蛍光体及びそれを用いた蛍光ランプ
WO2011126118A1 (ja) * 2010-04-09 2011-10-13 日立化成工業株式会社 球状蛍光体、波長変換型太陽電池封止材、太陽電池モジュール及びこれらの製造方法
JP2013539598A (ja) * 2010-08-11 2013-10-24 キユーデイー・ビジヨン・インコーポレーテツド 量子ドット系照明
JP2013536283A (ja) * 2010-08-14 2013-09-19 ソウル セミコンダクター カンパニー リミテッド 表面改質されたシリケート発光体
US9960324B2 (en) 2010-08-14 2018-05-01 Seoul Semiconductor Co., Ltd. Light-emitting device having surface-modified luminophores
US9196785B2 (en) 2010-08-14 2015-11-24 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified quantum dot luminophores
US9234129B2 (en) 2010-08-14 2016-01-12 Seoul Semiconductor Co., Ltd. Surface-modified quantum dot luminophores
US10312420B2 (en) 2010-08-14 2019-06-04 Seoul Semiconducter Co., Ltd. Light-emitting device having surface-modified luminophores
US9614129B2 (en) 2010-08-14 2017-04-04 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified luminophores
WO2012077485A1 (ja) * 2010-12-06 2012-06-14 日立化成工業株式会社 球状蛍光体、波長変換型太陽電池封止材、太陽電池モジュール及びこれらの製造方法
JP2012136686A (ja) * 2010-12-07 2012-07-19 Sharp Corp 波長変換部材、発光装置、照明装置、車両用前照灯および製造方法
WO2012077656A1 (ja) 2010-12-09 2012-06-14 三井金属鉱業株式会社 ＺｎＯ化合物被覆硫黄含有蛍光体
US9312454B2 (en) 2010-12-09 2016-04-12 Mitsui Mining & Smelting Co., Ltd. Sulfur-containing phosphor coated with ZnO compound
US9166119B2 (en) 2011-04-05 2015-10-20 Mitsui Mining & Smelting Co., Ltd. Light-emitting device
US10550321B2 (en) 2014-03-27 2020-02-04 Mitsui Mining & Smelting Co., Ltd. Phosphor and use thereof
KR20160114640A (ko) 2014-03-27 2016-10-05 미쓰이금속광업주식회사 형광체 및 그 용도
JP2015224299A (ja) * 2014-05-28 2015-12-14 シャープ株式会社 波長変換部材、発光装置、および波長変換部材の製造方法
US10899965B2 (en) 2015-03-30 2021-01-26 Nichia Corporation Fluorescent material particles, method for producing the same, and light emitting device
CN111602256A (zh) * 2018-01-22 2020-08-28 亮锐控股有限公司 用于发光装置的经涂布的波长转换材料
CN111602256B (zh) * 2018-01-22 2023-10-24 亮锐控股有限公司 用于发光装置的经涂布的波长转换材料
JP7312187B2 (ja) 2018-09-12 2023-07-20 デンカ株式会社 蛍光体及び発光装置
CN112739796A (zh) * 2018-09-12 2021-04-30 电化株式会社 荧光体和发光装置
KR20210057099A (ko) * 2018-09-12 2021-05-20 덴카 주식회사 형광체 및 발광 장치
JPWO2020054351A1 (ja) * 2018-09-12 2021-08-30 デンカ株式会社 蛍光体及び発光装置
US11434421B2 (en) 2018-09-12 2022-09-06 Denka Company Limited Phosphor and light-emitting device
WO2020054351A1 (ja) * 2018-09-12 2020-03-19 デンカ株式会社 蛍光体及び発光装置
CN112739796B (zh) * 2018-09-12 2024-01-09 电化株式会社 荧光体和发光装置
KR102686650B1 (ko) 2018-09-12 2024-07-22 덴카 주식회사 형광체 및 발광 장치
JP2020059764A (ja) * 2018-10-04 2020-04-16 デンカ株式会社 複合体、発光装置および複合体の製造方法
JP2020066677A (ja) * 2018-10-24 2020-04-30 デンカ株式会社 表面被覆蛍光体粒子、複合体、発光装置および表面被覆蛍光体粒子の製造方法
KR20210080427A (ko) 2018-10-24 2021-06-30 덴카 주식회사 표면 피복 형광체 입자, 복합체 및 발광 장치
JP2024179681A (ja) * 2023-06-15 2024-12-26 エルティーアイ株式会社 蓄光粒子および蓄光粒子の製造方法

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