JP2009010380A - 金属絶縁体金属キャパシタの製造方法 - Google Patents
金属絶縁体金属キャパシタの製造方法 Download PDFInfo
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- JP2009010380A JP2009010380A JP2008166607A JP2008166607A JP2009010380A JP 2009010380 A JP2009010380 A JP 2009010380A JP 2008166607 A JP2008166607 A JP 2008166607A JP 2008166607 A JP2008166607 A JP 2008166607A JP 2009010380 A JP2009010380 A JP 2009010380A
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- Prior art keywords
- metal
- etching
- film
- wafer
- forming
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- 239000002184 metal Substances 0.000 title claims abstract description 115
- 239000003990 capacitor Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 66
- 238000010438 heat treatment Methods 0.000 claims description 26
- 229910016570 AlCu Inorganic materials 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 13
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 230000003111 delayed effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000905 alloy phase Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】MIMキャパシタを持つ金属膜において、エッチング時に発生するブリッジによるエラーを熱処理により解決し、かつ、MIM構造の電極形成のためのエッチング時に発生する異常現象により後続の下部電極(Bottom Electrode)エッチング工程に誘発されるエラーを防止する。
【選択図】図5A
Description
α+Θ/α+Θ'/α+Θ''
Claims (14)
- 金属絶縁体金属(MIM)キャパシタを製造する方法であって、
ウエハー上に、下部金属膜、絶縁膜、及び上部金属膜を順次に形成する段階と、
前記上部金属膜と前記絶縁膜のエッチングのための第1パターンを形成する段階と、
前記形成された第1パターンを用いて前記上部金属膜と前記絶縁膜をエッチングし、前記エッチング後に、前記第1パターンをストリップする段階と、
前記ウエハーに対する熱処理と冷却スプリットを実施する段階と、
前記下部金属膜をエッチングするための金属パターンを形成する段階と、
前記形成された金属パターンを用いて前記下部金属膜をエッチングし、前記エッチング後に、前記金属パターンをストリップする段階と、
からなることを特徴とする金属絶縁体金属キャパシタの製造方法。 - 前記第1パターンをストリップした後に、前記ウエハーを洗浄する段階をさらに含むことを特徴とする、請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記熱処理と前記冷却スプリットを200秒間行うことを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記熱処理と前記冷却スプリットは、前記ウエハーを一定温度以上に加熱したのち急速冷却することを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記ウエハーの加熱温度は、前記上部金属膜に用いられる合金の溶解温度以上であることを特徴とする請求項4に記載の金属絶縁体金属キャパシタの製造方法。
- 前記ウエハーの加熱温度は、前記下部金属膜に用いられる合金の溶解温度以上であることを特徴とする請求項4に記載の金属絶縁体金属キャパシタの製造方法。
- 前記ウエハーの加熱温度を、前記エッチング及び前記ストリップが実施されるチャンバー内のディレータイムによって調節することを特徴とする請求項4に記載の金属絶縁体金属キャパシタの製造方法。
- 前記下部金属膜は、下部電極を形成するための膜であることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記下部金属膜は、Alで形成されることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記下部金属膜は、AlCuで形成されることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記上部金属膜は、上部電極を形成するための膜であることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記上部金属膜は、Tiで形成されることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記上部金属膜は、TiNで形成されることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
- 前記絶縁膜は、SiNで形成されることを特徴とする請求項1に記載の金属絶縁体金属キャパシタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070062698A KR100875161B1 (ko) | 2007-06-26 | 2007-06-26 | 금속 절연체 금속 캐패시터 제조 방법 |
KR10-2007-0062698 | 2007-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009010380A true JP2009010380A (ja) | 2009-01-15 |
JP4808232B2 JP4808232B2 (ja) | 2011-11-02 |
Family
ID=40158717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008166607A Expired - Fee Related JP4808232B2 (ja) | 2007-06-26 | 2008-06-25 | 金属絶縁体金属キャパシタの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7823260B2 (ja) |
JP (1) | JP4808232B2 (ja) |
KR (1) | KR100875161B1 (ja) |
CN (1) | CN101335197B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8375539B2 (en) * | 2009-08-05 | 2013-02-19 | International Business Machines Corporation | Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors |
CN102148137B (zh) * | 2010-02-10 | 2014-12-17 | 上海华虹宏力半导体制造有限公司 | Mim电容器及其形成工艺 |
CN103972044A (zh) * | 2013-02-01 | 2014-08-06 | 中芯国际集成电路制造(上海)有限公司 | Mim电容器的制备方法以及半导体器件的制备方法 |
US9231046B2 (en) | 2013-03-15 | 2016-01-05 | Globalfoundries Inc. | Capacitor using barrier layer metallurgy |
JP6263093B2 (ja) * | 2014-06-25 | 2018-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN104064357A (zh) * | 2014-06-26 | 2014-09-24 | 天津大学 | 一种bmn介质薄膜微波压控电容器的制备方法 |
HUP1500189A2 (en) | 2015-04-24 | 2016-10-28 | Geza Balint | Process and recording device for recording data electronically |
KR101881536B1 (ko) * | 2017-02-24 | 2018-07-24 | 주식회사 뉴파워 프라즈마 | 출력전류 제어가 가능한 전력공급장치 및 이를 이용한 전력공급방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308914A (ja) * | 1987-06-11 | 1988-12-16 | Nec Corp | アルミニウム合金配線の形成方法 |
JPH08186175A (ja) * | 1994-12-28 | 1996-07-16 | Sony Corp | 半導体装置の配線形成方法及び成膜装置 |
JP2002075997A (ja) * | 2000-08-30 | 2002-03-15 | Hitachi Ltd | 半導体装置とその製造方法 |
JP2002329790A (ja) * | 2001-04-19 | 2002-11-15 | Hynix Semiconductor Inc | 半導体素子のキャパシタ製造方法 |
JP2003110095A (ja) * | 2001-08-08 | 2003-04-11 | Agilent Technol Inc | 集積回路およびその形成方法 |
JP2004296743A (ja) * | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | コンタクトホール形成方法、半導体装置、キャパシタ製造方法、メモリ装置、及び電子機器 |
Family Cites Families (5)
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US6291313B1 (en) * | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6159825A (en) * | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Controlled cleavage thin film separation process using a reusable substrate |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US7435613B2 (en) * | 2001-02-12 | 2008-10-14 | Agere Systems Inc. | Methods of fabricating a membrane with improved mechanical integrity |
-
2007
- 2007-06-26 KR KR1020070062698A patent/KR100875161B1/ko active IP Right Grant
-
2008
- 2008-06-24 US US12/145,327 patent/US7823260B2/en not_active Expired - Fee Related
- 2008-06-25 CN CN2008101278080A patent/CN101335197B/zh not_active Expired - Fee Related
- 2008-06-25 JP JP2008166607A patent/JP4808232B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308914A (ja) * | 1987-06-11 | 1988-12-16 | Nec Corp | アルミニウム合金配線の形成方法 |
JPH08186175A (ja) * | 1994-12-28 | 1996-07-16 | Sony Corp | 半導体装置の配線形成方法及び成膜装置 |
JP2002075997A (ja) * | 2000-08-30 | 2002-03-15 | Hitachi Ltd | 半導体装置とその製造方法 |
JP2002329790A (ja) * | 2001-04-19 | 2002-11-15 | Hynix Semiconductor Inc | 半導体素子のキャパシタ製造方法 |
JP2003110095A (ja) * | 2001-08-08 | 2003-04-11 | Agilent Technol Inc | 集積回路およびその形成方法 |
JP2004296743A (ja) * | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | コンタクトホール形成方法、半導体装置、キャパシタ製造方法、メモリ装置、及び電子機器 |
Also Published As
Publication number | Publication date |
---|---|
CN101335197A (zh) | 2008-12-31 |
CN101335197B (zh) | 2011-05-04 |
KR100875161B1 (ko) | 2008-12-22 |
US7823260B2 (en) | 2010-11-02 |
US20090000094A1 (en) | 2009-01-01 |
JP4808232B2 (ja) | 2011-11-02 |
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