JP2008547227A5 - - Google Patents

Download PDF

Info

Publication number
JP2008547227A5
JP2008547227A5 JP2008518322A JP2008518322A JP2008547227A5 JP 2008547227 A5 JP2008547227 A5 JP 2008547227A5 JP 2008518322 A JP2008518322 A JP 2008518322A JP 2008518322 A JP2008518322 A JP 2008518322A JP 2008547227 A5 JP2008547227 A5 JP 2008547227A5
Authority
JP
Japan
Prior art keywords
dielectric
thin film
film composition
capacitor
barium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008518322A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008547227A (ja
Filing date
Publication date
Priority claimed from US11/157,621 external-priority patent/US20060287188A1/en
Application filed filed Critical
Publication of JP2008547227A publication Critical patent/JP2008547227A/ja
Publication of JP2008547227A5 publication Critical patent/JP2008547227A5/ja
Withdrawn legal-status Critical Current

Links

JP2008518322A 2005-06-21 2006-06-21 マンガンドープトチタン酸バリウム薄膜組成物、キャパシタ、およびその製造方法 Withdrawn JP2008547227A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/157,621 US20060287188A1 (en) 2005-06-21 2005-06-21 Manganese doped barium titanate thin film compositions, capacitors, and methods of making thereof
PCT/US2006/024008 WO2007002107A1 (en) 2005-06-21 2006-06-21 Manganese doped barium titanate thin film compositions, capacitors, and methods of making thereof

Publications (2)

Publication Number Publication Date
JP2008547227A JP2008547227A (ja) 2008-12-25
JP2008547227A5 true JP2008547227A5 (https=) 2009-08-06

Family

ID=37110237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518322A Withdrawn JP2008547227A (ja) 2005-06-21 2006-06-21 マンガンドープトチタン酸バリウム薄膜組成物、キャパシタ、およびその製造方法

Country Status (7)

Country Link
US (3) US20060287188A1 (https=)
EP (1) EP1897103A1 (https=)
JP (1) JP2008547227A (https=)
KR (1) KR100949254B1 (https=)
CN (1) CN101199033A (https=)
TW (1) TW200715324A (https=)
WO (1) WO2007002107A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795663B2 (en) * 2005-06-21 2010-09-14 E. I. Du Pont De Nemours And Company Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
JP4908244B2 (ja) * 2007-01-26 2012-04-04 昭和電工株式会社 複合酸化物膜形成用塗布剤
US7635634B2 (en) * 2007-04-16 2009-12-22 Infineon Technologies Ag Dielectric apparatus and associated methods
US8211496B2 (en) * 2007-06-29 2012-07-03 Johnson Ip Holding, Llc Amorphous lithium lanthanum titanate thin films manufacturing method
US9034525B2 (en) * 2008-06-27 2015-05-19 Johnson Ip Holding, Llc Ionically-conductive amorphous lithium lanthanum zirconium oxide
US20120196189A1 (en) 2007-06-29 2012-08-02 Johnson Ip Holding, Llc Amorphous ionically conductive metal oxides and sol gel method of preparation
US20090092903A1 (en) * 2007-08-29 2009-04-09 Johnson Lonnie G Low Cost Solid State Rechargeable Battery and Method of Manufacturing Same
US8446706B1 (en) * 2007-10-10 2013-05-21 Kovio, Inc. High precision capacitors
US20090238954A1 (en) * 2008-03-20 2009-09-24 Seigi Suh Large area thin film capacitors on metal foils and methods of manufacturing same
US20090238955A1 (en) * 2008-03-20 2009-09-24 E. I. Du Pont De Nemours And Company Processes for the manufacture of barium titanate capacitors on nickel foils
US20100202099A1 (en) * 2009-02-12 2010-08-12 Lite-On Capital Inc. Thin film capacitor
US7987566B2 (en) * 2009-07-15 2011-08-02 Sturzebecher Richard J Capacitor forming method
EP2426684A1 (en) 2010-09-02 2012-03-07 Mitsubishi Materials Corporation Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method
TWI465485B (zh) 2011-09-13 2014-12-21 Ind Tech Res Inst 含氧化石墨之樹脂配方、組成物及其複合材料與無機粉體的分散方法
EP2608219B1 (en) * 2011-12-20 2015-03-04 Mitsubishi Materials Corporation Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method
US10333123B2 (en) 2012-03-01 2019-06-25 Johnson Ip Holding, Llc High capacity solid state composite cathode, solid state composite separator, solid-state rechargeable lithium battery and methods of making same
US10084168B2 (en) 2012-10-09 2018-09-25 Johnson Battery Technologies, Inc. Solid-state battery separators and methods of fabrication
JP6547435B2 (ja) * 2014-09-12 2019-07-24 Tdk株式会社 誘電体膜および誘電体素子
JP6763965B2 (ja) 2015-12-21 2020-09-30 ジョンソン・アイピー・ホールディング・エルエルシー 固体電池、セパレータ、電極および製造方法
US10218044B2 (en) 2016-01-22 2019-02-26 Johnson Ip Holding, Llc Johnson lithium oxygen electrochemical engine
KR20230147659A (ko) * 2021-02-17 2023-10-23 어플라이드 머티어리얼스, 인코포레이티드 더 짧은 커패시터 높이 및 양자 메모리 dram을 위한 커패시터 유전체

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920781A (en) * 1971-04-02 1975-11-18 Sprague Electric Co Method of forming a ceramic dielectric body
DE3260379D1 (en) 1981-01-27 1984-08-23 Marcel Ramond Universal, transformable and adaptable work-bench allowing specific, multiple and functional applications
JPS57187905A (en) 1981-05-13 1982-11-18 Matsushita Electric Industrial Co Ltd Method of producing positive temperature coefficient thermistor
US4988468A (en) * 1987-01-08 1991-01-29 Murata Manufacturing Co., Ltd. Method for producing non-reducible dielectric ceramic composition
US4855266A (en) * 1987-01-13 1989-08-08 E. I. Du Pont De Nemours And Company High K dielectric composition for use in multilayer ceramic capacitors having copper internal electrodes
JPS6469514A (en) 1987-09-11 1989-03-15 Ube Industries Preparation of starting powder for condenser material
US5198269A (en) * 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
US5155072A (en) * 1990-06-29 1992-10-13 E. I. Du Pont De Nemours And Company High K dielectric compositions with fine grain size
US5130281A (en) * 1990-07-10 1992-07-14 Murata Manufacturing Co., Ltd. Dielectric ceramic compositions and manufacturing method of dielectric ceramics
WO1992019564A1 (en) * 1991-05-01 1992-11-12 The Regents Of The University Of California Amorphous ferroelectric materials
US5296646A (en) * 1992-04-03 1994-03-22 The Whitaker Corporation Protector module for telephone line junction box
US5271955A (en) * 1992-04-06 1993-12-21 Motorola, Inc. Method for making a semiconductor device having an anhydrous ferroelectric thin film
EP0581251A3 (en) * 1992-07-31 1995-02-08 Taiyo Yuden Kk Ceramic materials with a high dielectric constant and capacitors made from them.
US6025619A (en) * 1992-10-23 2000-02-15 Azuma; Masamichi Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same
US5384294A (en) * 1993-11-30 1995-01-24 The United States Of America As Represented By The Secretary Of The Air Force Sol-gel derived lead oxide containing ceramics
US5456908A (en) * 1994-03-01 1995-10-10 The University Of Kentucky Research Foundation Polyamine-polyamine and polyamine-protein transport inhibitor conjugates and their use as pharmaceuticals and in research relating to polyamine transport
US5453908A (en) * 1994-09-30 1995-09-26 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by holmium donor doping
US5563762A (en) * 1994-11-28 1996-10-08 Northern Telecom Limited Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
US6066581A (en) * 1995-07-27 2000-05-23 Nortel Networks Corporation Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
US5853500A (en) * 1997-07-18 1998-12-29 Symetrix Corporation Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures
JP2001506425A (ja) * 1997-10-08 2001-05-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ セラミック多層キャパシタ
US5962654A (en) * 1998-01-30 1999-10-05 International Business Machines Operation Alkoxyalkoxides and use to form films
US6631551B1 (en) * 1998-06-26 2003-10-14 Delphi Technologies, Inc. Method of forming integral passive electrical components on organic circuit board substrates
US6207522B1 (en) * 1998-11-23 2001-03-27 Microcoating Technologies Formation of thin film capacitors
US6623865B1 (en) 2000-03-04 2003-09-23 Energenius, Inc. Lead zirconate titanate dielectric thin film composites on metallic foils
US6649930B2 (en) * 2000-06-27 2003-11-18 Energenius, Inc. Thin film composite containing a nickel-coated copper substrate and energy storage device containing the same
US6541137B1 (en) * 2000-07-31 2003-04-01 Motorola, Inc. Multi-layer conductor-dielectric oxide structure
WO2002054420A1 (en) * 2000-12-28 2002-07-11 Tdk Corporation Laminated circuit board and production method for electronic part, and laminated electronic part
US6477034B1 (en) * 2001-10-03 2002-11-05 Intel Corporation Interposer substrate with low inductance capacitive paths
US6693793B2 (en) * 2001-10-15 2004-02-17 Mitsui Mining & Smelting Co., Ltd. Double-sided copper clad laminate for capacitor layer formation and its manufacturing method
US6936301B2 (en) * 2002-05-06 2005-08-30 North Carolina State University Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer
US7029971B2 (en) * 2003-07-17 2006-04-18 E. I. Du Pont De Nemours And Company Thin film dielectrics for capacitors and methods of making thereof
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
KR100631894B1 (ko) * 2004-12-07 2006-10-09 삼성전기주식회사 유전체 세라믹용 졸 조성물, 이를 이용한 유전체 세라믹과적층세라믹 커패시터
US7795663B2 (en) * 2005-06-21 2010-09-14 E. I. Du Pont De Nemours And Company Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof

Similar Documents

Publication Publication Date Title
JP2008547227A5 (https=)
JP4522774B2 (ja) コンデンサ用薄膜誘電体およびその製造方法
US7601181B2 (en) Methods of making thin film capacitors comprising a manganese doped barium titantate dielectric
JP3261130B2 (ja) 細粒径をもつ高ｋ誘電体組成物
US20070211408A1 (en) Acceptor Doped Barium Titanate Based Thin Film Capacitors on Metal Foils and Methods of Making Thereof
EP2434531A3 (en) Metal-insulator-metal capacitor and method for manufacturing thereof
TW200307959A (en) Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer, and structures fabricated thereby
EP1879202A2 (en) Thin film dielectrics with co-fired electrodes for capacitors and methods of making thereof
JP2009242204A (ja) ペロブスカイト構造酸化物の製造方法
JP4028508B2 (ja) 積層セラミック素子の製造方法
WO2012023406A1 (ja) 積層セラミック電子部品
CN103383896A (zh) 多层电子部件及用于制造其的方法
EP1921641A1 (en) Method of making thin-film capacitors on metal foil using thick top electrodes
JP2009540602A (ja) 化学溶液堆積誘電体薄膜のガラスフラックスを補助とした焼結
JP2933179B2 (ja) 積層コンデンサ用誘電体の製造方法
JP2825812B2 (ja) 積層セラミック体の製造方法
JP2008053281A (ja) 高誘電体膜とその形成方法
JP2006269320A (ja) 電極用ペーストならびにこれを用いた積層セラミック電子部品の製造方法
JP4245552B2 (ja) 複合酸化物の結晶性薄膜の製造方法
JPH0310216B2 (https=)
JP2006191110A (ja) 銅箔上のチタン酸バリウムの酸素ドープされた焼成