JP2008547227A - マンガンドープトチタン酸バリウム薄膜組成物、キャパシタ、およびその製造方法 - Google Patents

マンガンドープトチタン酸バリウム薄膜組成物、キャパシタ、およびその製造方法 Download PDF

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Publication number
JP2008547227A
JP2008547227A JP2008518322A JP2008518322A JP2008547227A JP 2008547227 A JP2008547227 A JP 2008547227A JP 2008518322 A JP2008518322 A JP 2008518322A JP 2008518322 A JP2008518322 A JP 2008518322A JP 2008547227 A JP2008547227 A JP 2008547227A
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Prior art keywords
dielectric
thin film
capacitor
film composition
barium
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JP2008518322A
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Japanese (ja)
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JP2008547227A5 (https=
Inventor
ジェイ．ボーランド ウィリアム
バーン イアン
フレドリック イーレフェルド ジョン
マリア ジョン−ポール
セイギ スー
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EIDP Inc
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EI Du Pont de Nemours and Co
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Publication of JP2008547227A publication Critical patent/JP2008547227A/ja
Publication of JP2008547227A5 publication Critical patent/JP2008547227A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C01G23/006—Alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors incorporating printed capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
JP2008518322A 2005-06-21 2006-06-21 マンガンドープトチタン酸バリウム薄膜組成物、キャパシタ、およびその製造方法 Withdrawn JP2008547227A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/157,621 US20060287188A1 (en) 2005-06-21 2005-06-21 Manganese doped barium titanate thin film compositions, capacitors, and methods of making thereof
PCT/US2006/024008 WO2007002107A1 (en) 2005-06-21 2006-06-21 Manganese doped barium titanate thin film compositions, capacitors, and methods of making thereof

Publications (2)

Publication Number Publication Date
JP2008547227A true JP2008547227A (ja) 2008-12-25
JP2008547227A5 JP2008547227A5 (https=) 2009-08-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518322A Withdrawn JP2008547227A (ja) 2005-06-21 2006-06-21 マンガンドープトチタン酸バリウム薄膜組成物、キャパシタ、およびその製造方法

Country Status (7)

Country Link
US (3) US20060287188A1 (https=)
EP (1) EP1897103A1 (https=)
JP (1) JP2008547227A (https=)
KR (1) KR100949254B1 (https=)
CN (1) CN101199033A (https=)
TW (1) TW200715324A (https=)
WO (1) WO2007002107A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013129588A (ja) * 2011-12-20 2013-07-04 Mitsubishi Materials Corp 誘電体薄膜形成用組成物、誘電体薄膜の形成方法及び該方法により形成された誘電体薄膜
JP2016060690A (ja) * 2014-09-12 2016-04-25 Tdk株式会社 誘電体膜および誘電体素子

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US7795663B2 (en) * 2005-06-21 2010-09-14 E. I. Du Pont De Nemours And Company Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
JP4908244B2 (ja) * 2007-01-26 2012-04-04 昭和電工株式会社 複合酸化物膜形成用塗布剤
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US8211496B2 (en) * 2007-06-29 2012-07-03 Johnson Ip Holding, Llc Amorphous lithium lanthanum titanate thin films manufacturing method
US9034525B2 (en) * 2008-06-27 2015-05-19 Johnson Ip Holding, Llc Ionically-conductive amorphous lithium lanthanum zirconium oxide
US20120196189A1 (en) 2007-06-29 2012-08-02 Johnson Ip Holding, Llc Amorphous ionically conductive metal oxides and sol gel method of preparation
US20090092903A1 (en) * 2007-08-29 2009-04-09 Johnson Lonnie G Low Cost Solid State Rechargeable Battery and Method of Manufacturing Same
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US20090238954A1 (en) * 2008-03-20 2009-09-24 Seigi Suh Large area thin film capacitors on metal foils and methods of manufacturing same
US20090238955A1 (en) * 2008-03-20 2009-09-24 E. I. Du Pont De Nemours And Company Processes for the manufacture of barium titanate capacitors on nickel foils
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TWI465485B (zh) 2011-09-13 2014-12-21 Ind Tech Res Inst 含氧化石墨之樹脂配方、組成物及其複合材料與無機粉體的分散方法
US10333123B2 (en) 2012-03-01 2019-06-25 Johnson Ip Holding, Llc High capacity solid state composite cathode, solid state composite separator, solid-state rechargeable lithium battery and methods of making same
US10084168B2 (en) 2012-10-09 2018-09-25 Johnson Battery Technologies, Inc. Solid-state battery separators and methods of fabrication
JP6763965B2 (ja) 2015-12-21 2020-09-30 ジョンソン・アイピー・ホールディング・エルエルシー 固体電池、セパレータ、電極および製造方法
US10218044B2 (en) 2016-01-22 2019-02-26 Johnson Ip Holding, Llc Johnson lithium oxygen electrochemical engine
KR20230147659A (ko) * 2021-02-17 2023-10-23 어플라이드 머티어리얼스, 인코포레이티드 더 짧은 커패시터 높이 및 양자 메모리 dram을 위한 커패시터 유전체

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013129588A (ja) * 2011-12-20 2013-07-04 Mitsubishi Materials Corp 誘電体薄膜形成用組成物、誘電体薄膜の形成方法及び該方法により形成された誘電体薄膜
JP2016060690A (ja) * 2014-09-12 2016-04-25 Tdk株式会社 誘電体膜および誘電体素子

Also Published As

Publication number Publication date
WO2007002107A1 (en) 2007-01-04
TW200715324A (en) 2007-04-16
US20060287188A1 (en) 2006-12-21
CN101199033A (zh) 2008-06-11
US7601181B2 (en) 2009-10-13
KR100949254B1 (ko) 2010-03-25
US7572518B2 (en) 2009-08-11
EP1897103A1 (en) 2008-03-12
KR20080018272A (ko) 2008-02-27
US20080047117A1 (en) 2008-02-28
US20080044672A1 (en) 2008-02-21

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