JP2008532324A - 制御された処理結果分布を有するエッチング方法 - Google Patents

制御された処理結果分布を有するエッチング方法 Download PDF

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Publication number
JP2008532324A
JP2008532324A JP2007558240A JP2007558240A JP2008532324A JP 2008532324 A JP2008532324 A JP 2008532324A JP 2007558240 A JP2007558240 A JP 2007558240A JP 2007558240 A JP2007558240 A JP 2007558240A JP 2008532324 A JP2008532324 A JP 2008532324A
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Prior art keywords
etching
substrate
layer
temperature
distribution
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Pending
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JP2007558240A
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English (en)
Japanese (ja)
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JP2008532324A5 (https=
Inventor
トーマス ジェイ クロペウニクキ
セオドロス パナゴポウロス
ニコラス ガニ
ウィルフレッド パウ
メイヒュア シェン
ジョン ピー ホーランド
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/246,012 external-priority patent/US8075729B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2006/007525 external-priority patent/WO2006094162A2/en
Publication of JP2008532324A publication Critical patent/JP2008532324A/ja
Publication of JP2008532324A5 publication Critical patent/JP2008532324A5/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007558240A 2005-03-03 2006-03-02 制御された処理結果分布を有するエッチング方法 Pending JP2008532324A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65869805P 2005-03-03 2005-03-03
US11/246,012 US8075729B2 (en) 2004-10-07 2005-10-07 Method and apparatus for controlling temperature of a substrate
PCT/US2006/007525 WO2006094162A2 (en) 2005-03-03 2006-03-02 Method for etching having a controlled distribution of process results

Publications (2)

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JP2008532324A true JP2008532324A (ja) 2008-08-14
JP2008532324A5 JP2008532324A5 (https=) 2009-05-07

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JP (1) JP2008532324A (https=)
CN (1) CN101133682B (https=)
TW (1) TWI323011B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011013571A1 (de) 2010-03-11 2011-09-15 Tokyo Electron Ltd. Plasmaätzverfahren und Plasmaätzvorrichtung
JP2019186322A (ja) * 2018-04-05 2019-10-24 東京エレクトロン株式会社 被加工物の処理方法
CN112884302A (zh) * 2021-02-01 2021-06-01 杭州市电力设计院有限公司 一种电力物资管理方法
WO2024005047A1 (ja) * 2022-07-01 2024-01-04 東京エレクトロン株式会社 基板処理装置の制御方法及び基板処理システム

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102386077B (zh) * 2010-09-03 2014-05-14 中芯国际集成电路制造(上海)有限公司 一种制作半导体器件的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243077A (ja) * 1997-12-26 1999-09-07 Hitachi Ltd プラズマ処理方法およびプラズマ処理装置
WO2003034463A2 (en) * 2001-10-15 2003-04-24 Lam Research Corporation Tunable multi-zone gas injection system
JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243077A (ja) * 1997-12-26 1999-09-07 Hitachi Ltd プラズマ処理方法およびプラズマ処理装置
WO2003034463A2 (en) * 2001-10-15 2003-04-24 Lam Research Corporation Tunable multi-zone gas injection system
JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011013571A1 (de) 2010-03-11 2011-09-15 Tokyo Electron Ltd. Plasmaätzverfahren und Plasmaätzvorrichtung
JP2019186322A (ja) * 2018-04-05 2019-10-24 東京エレクトロン株式会社 被加工物の処理方法
JP7077108B2 (ja) 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112884302A (zh) * 2021-02-01 2021-06-01 杭州市电力设计院有限公司 一种电力物资管理方法
CN112884302B (zh) * 2021-02-01 2024-01-30 杭州市电力设计院有限公司 一种电力物资管理方法
WO2024005047A1 (ja) * 2022-07-01 2024-01-04 東京エレクトロン株式会社 基板処理装置の制御方法及び基板処理システム

Also Published As

Publication number Publication date
CN101133682B (zh) 2011-07-20
TWI323011B (en) 2010-04-01
CN101133682A (zh) 2008-02-27
TW200727359A (en) 2007-07-16

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