JP2008532324A5 - - Google Patents

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Publication number
JP2008532324A5
JP2008532324A5 JP2007558240A JP2007558240A JP2008532324A5 JP 2008532324 A5 JP2008532324 A5 JP 2008532324A5 JP 2007558240 A JP2007558240 A JP 2007558240A JP 2007558240 A JP2007558240 A JP 2007558240A JP 2008532324 A5 JP2008532324 A5 JP 2008532324A5
Authority
JP
Japan
Prior art keywords
substrate
etching
parameter set
control parameter
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007558240A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008532324A (ja
Filing date
Publication date
Priority claimed from US11/246,012 external-priority patent/US8075729B2/en
Application filed filed Critical
Priority claimed from PCT/US2006/007525 external-priority patent/WO2006094162A2/en
Publication of JP2008532324A publication Critical patent/JP2008532324A/ja
Publication of JP2008532324A5 publication Critical patent/JP2008532324A5/ja
Pending legal-status Critical Current

Links

JP2007558240A 2005-03-03 2006-03-02 制御された処理結果分布を有するエッチング方法 Pending JP2008532324A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65869805P 2005-03-03 2005-03-03
US11/246,012 US8075729B2 (en) 2004-10-07 2005-10-07 Method and apparatus for controlling temperature of a substrate
PCT/US2006/007525 WO2006094162A2 (en) 2005-03-03 2006-03-02 Method for etching having a controlled distribution of process results

Publications (2)

Publication Number Publication Date
JP2008532324A JP2008532324A (ja) 2008-08-14
JP2008532324A5 true JP2008532324A5 (https=) 2009-05-07

Family

ID=39129930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007558240A Pending JP2008532324A (ja) 2005-03-03 2006-03-02 制御された処理結果分布を有するエッチング方法

Country Status (3)

Country Link
JP (1) JP2008532324A (https=)
CN (1) CN101133682B (https=)
TW (1) TWI323011B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192664A (ja) 2010-03-11 2011-09-29 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
CN102386077B (zh) * 2010-09-03 2014-05-14 中芯国际集成电路制造(上海)有限公司 一种制作半导体器件的方法
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112884302B (zh) * 2021-02-01 2024-01-30 杭州市电力设计院有限公司 一种电力物资管理方法
KR20250028381A (ko) * 2022-07-01 2025-02-28 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 제어 방법 및 기판 처리 시스템

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4237317B2 (ja) * 1997-12-26 2009-03-11 株式会社日立製作所 プラズマ処理装置
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法

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