JP2007531054A5 - - Google Patents

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Publication number
JP2007531054A5
JP2007531054A5 JP2007506163A JP2007506163A JP2007531054A5 JP 2007531054 A5 JP2007531054 A5 JP 2007531054A5 JP 2007506163 A JP2007506163 A JP 2007506163A JP 2007506163 A JP2007506163 A JP 2007506163A JP 2007531054 A5 JP2007531054 A5 JP 2007531054A5
Authority
JP
Japan
Prior art keywords
critical dimension
layer
amount
trim amount
variable parameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007506163A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007531054A (ja
Filing date
Publication date
Priority claimed from US10/813,570 external-priority patent/US6893975B1/en
Application filed filed Critical
Publication of JP2007531054A publication Critical patent/JP2007531054A/ja
Publication of JP2007531054A5 publication Critical patent/JP2007531054A5/ja
Pending legal-status Critical Current

Links

JP2007506163A 2004-03-31 2005-02-08 マスクをエッチングするためのシステムおよび方法 Pending JP2007531054A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/813,570 US6893975B1 (en) 2004-03-31 2004-03-31 System and method for etching a mask
PCT/US2005/004070 WO2005104217A2 (en) 2004-03-31 2005-02-08 System and method for etching a mask

Publications (2)

Publication Number Publication Date
JP2007531054A JP2007531054A (ja) 2007-11-01
JP2007531054A5 true JP2007531054A5 (https=) 2008-02-28

Family

ID=34574882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007506163A Pending JP2007531054A (ja) 2004-03-31 2005-02-08 マスクをエッチングするためのシステムおよび方法

Country Status (7)

Country Link
US (2) US6893975B1 (https=)
EP (1) EP1730769B1 (https=)
JP (1) JP2007531054A (https=)
KR (1) KR101142709B1 (https=)
CN (1) CN100511621C (https=)
TW (1) TWI270121B (https=)
WO (1) WO2005104217A2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323417B2 (en) * 2004-09-21 2008-01-29 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US8075732B2 (en) * 2004-11-01 2011-12-13 Cymer, Inc. EUV collector debris management
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7291285B2 (en) * 2005-05-10 2007-11-06 International Business Machines Corporation Method and system for line-dimension control of an etch process
US20070077763A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Deposition technique to planarize a multi-layer structure
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
CN101296554B (zh) * 2008-06-19 2011-01-26 友达光电股份有限公司 等离子体处理装置及其上电极板
US8039399B2 (en) * 2008-10-09 2011-10-18 Micron Technology, Inc. Methods of forming patterns utilizing lithography and spacers
US8236700B2 (en) * 2009-08-17 2012-08-07 Tokyo Electron Limited Method for patterning an ARC layer using SF6 and a hydrocarbon gas
US8334083B2 (en) 2011-03-22 2012-12-18 Tokyo Electron Limited Etch process for controlling pattern CD and integrity in multi-layer masks
KR20160044545A (ko) * 2013-08-27 2016-04-25 도쿄엘렉트론가부시키가이샤 하드마스크를 측면으로 트리밍하기 위한 방법
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
CN105609415B (zh) * 2015-12-25 2018-04-03 中国科学院微电子研究所 一种刻蚀方法
KR102576706B1 (ko) * 2016-04-15 2023-09-08 삼성전자주식회사 반도체 소자의 제조 방법
KR102257919B1 (ko) * 2017-02-24 2021-05-31 에이에스엠엘 네델란즈 비.브이. 에치 바이어스 특성 묘사 및 그 사용 방법
CN109950140B (zh) * 2019-04-18 2021-11-05 上海华力微电子有限公司 一种自对准双层图形的形成方法
KR102828894B1 (ko) * 2020-11-30 2025-07-04 주식회사 엘지화학 애노드 표면 특성 및 퇴화 분석 방법
KR102884223B1 (ko) * 2020-11-30 2025-11-10 주식회사 엘지화학 캐소드 코팅 성분 분석 방법
KR102765574B1 (ko) * 2020-11-30 2025-02-12 주식회사 엘지화학 애노드 표면 피막 분석 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394597A1 (en) * 1989-04-28 1990-10-31 International Business Machines Corporation Follow-up System for Monitoring the Etching Process in an RIE Equipment and its Application to Producing High-resolution and Reproducible Patterns
JP3388986B2 (ja) * 1996-03-08 2003-03-24 株式会社東芝 露光用マスク及びその製造方法
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
KR100881472B1 (ko) * 1999-02-04 2009-02-05 어플라이드 머티어리얼스, 인코포레이티드 소정 기판 상에 놓여져 있는 패턴화된 마스크 표면 위로 적층 구조물을 증착하기 위한 방법
US6235609B1 (en) * 2000-04-03 2001-05-22 Philips Electronics North America Corp. Method for forming isolation areas with improved isolation oxide
US6926843B2 (en) * 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
JP3406302B2 (ja) * 2001-01-16 2003-05-12 株式会社半導体先端テクノロジーズ 微細パターンの形成方法、半導体装置の製造方法および半導体装置
US20030092281A1 (en) * 2001-11-13 2003-05-15 Chartered Semiconductors Manufactured Limited Method for organic barc and photoresist trimming process
US6858361B2 (en) * 2002-03-01 2005-02-22 David S. L. Mui Methodology for repeatable post etch CD in a production tool
US6716570B2 (en) * 2002-05-23 2004-04-06 Institute Of Microelectronics Low temperature resist trimming process
CN1285968C (zh) * 2002-06-14 2006-11-22 联华电子股份有限公司 图案转移的方法
JP3639268B2 (ja) * 2002-06-14 2005-04-20 株式会社日立製作所 エッチング処理方法
US6849151B2 (en) * 2002-08-07 2005-02-01 Michael S. Barnes Monitoring substrate processing by detecting reflectively diffracted light
US20050081781A1 (en) * 2003-10-17 2005-04-21 Taiwan Semiconductor Manufacturing Co. Fully dry, Si recess free process for removing high k dielectric layer
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process

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