CN100511621C - 用于刻蚀掩模的系统和方法 - Google Patents

用于刻蚀掩模的系统和方法 Download PDF

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Publication number
CN100511621C
CN100511621C CNB200580001599XA CN200580001599A CN100511621C CN 100511621 C CN100511621 C CN 100511621C CN B200580001599X A CNB200580001599X A CN B200580001599XA CN 200580001599 A CN200580001599 A CN 200580001599A CN 100511621 C CN100511621 C CN 100511621C
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CN
China
Prior art keywords
layer
gas
variable element
amount
critical dimension
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Expired - Fee Related
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CNB200580001599XA
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English (en)
Chinese (zh)
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CN1906747A (zh
Inventor
岳红宇
山下朝夫
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of CN1906747A publication Critical patent/CN1906747A/zh
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Publication of CN100511621C publication Critical patent/CN100511621C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706831—Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB200580001599XA 2004-03-31 2005-02-08 用于刻蚀掩模的系统和方法 Expired - Fee Related CN100511621C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/813,570 2004-03-31
US10/813,570 US6893975B1 (en) 2004-03-31 2004-03-31 System and method for etching a mask

Publications (2)

Publication Number Publication Date
CN1906747A CN1906747A (zh) 2007-01-31
CN100511621C true CN100511621C (zh) 2009-07-08

Family

ID=34574882

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200580001599XA Expired - Fee Related CN100511621C (zh) 2004-03-31 2005-02-08 用于刻蚀掩模的系统和方法

Country Status (7)

Country Link
US (2) US6893975B1 (https=)
EP (1) EP1730769B1 (https=)
JP (1) JP2007531054A (https=)
KR (1) KR101142709B1 (https=)
CN (1) CN100511621C (https=)
TW (1) TWI270121B (https=)
WO (1) WO2005104217A2 (https=)

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US7323417B2 (en) * 2004-09-21 2008-01-29 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US8075732B2 (en) * 2004-11-01 2011-12-13 Cymer, Inc. EUV collector debris management
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7291285B2 (en) * 2005-05-10 2007-11-06 International Business Machines Corporation Method and system for line-dimension control of an etch process
US20070077763A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Deposition technique to planarize a multi-layer structure
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
CN101296554B (zh) * 2008-06-19 2011-01-26 友达光电股份有限公司 等离子体处理装置及其上电极板
US8039399B2 (en) * 2008-10-09 2011-10-18 Micron Technology, Inc. Methods of forming patterns utilizing lithography and spacers
US8236700B2 (en) * 2009-08-17 2012-08-07 Tokyo Electron Limited Method for patterning an ARC layer using SF6 and a hydrocarbon gas
US8334083B2 (en) 2011-03-22 2012-12-18 Tokyo Electron Limited Etch process for controlling pattern CD and integrity in multi-layer masks
KR20160044545A (ko) * 2013-08-27 2016-04-25 도쿄엘렉트론가부시키가이샤 하드마스크를 측면으로 트리밍하기 위한 방법
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
CN105609415B (zh) * 2015-12-25 2018-04-03 中国科学院微电子研究所 一种刻蚀方法
KR102576706B1 (ko) * 2016-04-15 2023-09-08 삼성전자주식회사 반도체 소자의 제조 방법
KR102257919B1 (ko) * 2017-02-24 2021-05-31 에이에스엠엘 네델란즈 비.브이. 에치 바이어스 특성 묘사 및 그 사용 방법
CN109950140B (zh) * 2019-04-18 2021-11-05 上海华力微电子有限公司 一种自对准双层图形的形成方法
KR102828894B1 (ko) * 2020-11-30 2025-07-04 주식회사 엘지화학 애노드 표면 특성 및 퇴화 분석 방법
KR102884223B1 (ko) * 2020-11-30 2025-11-10 주식회사 엘지화학 캐소드 코팅 성분 분석 방법
KR102765574B1 (ko) * 2020-11-30 2025-02-12 주식회사 엘지화학 애노드 표면 피막 분석 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US20030165755A1 (en) * 2002-03-01 2003-09-04 Applied Materials, Inc. Methodology for repeatable post etch CD in a production tool
US20030230551A1 (en) * 2002-06-14 2003-12-18 Akira Kagoshima Etching system and etching method
CN1464341A (zh) * 2002-06-14 2003-12-31 联华电子股份有限公司 图案转移的方法

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EP0394597A1 (en) * 1989-04-28 1990-10-31 International Business Machines Corporation Follow-up System for Monitoring the Etching Process in an RIE Equipment and its Application to Producing High-resolution and Reproducible Patterns
JP3388986B2 (ja) * 1996-03-08 2003-03-24 株式会社東芝 露光用マスク及びその製造方法
KR100881472B1 (ko) * 1999-02-04 2009-02-05 어플라이드 머티어리얼스, 인코포레이티드 소정 기판 상에 놓여져 있는 패턴화된 마스크 표면 위로 적층 구조물을 증착하기 위한 방법
US6235609B1 (en) * 2000-04-03 2001-05-22 Philips Electronics North America Corp. Method for forming isolation areas with improved isolation oxide
US6926843B2 (en) * 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
JP3406302B2 (ja) * 2001-01-16 2003-05-12 株式会社半導体先端テクノロジーズ 微細パターンの形成方法、半導体装置の製造方法および半導体装置
US20030092281A1 (en) * 2001-11-13 2003-05-15 Chartered Semiconductors Manufactured Limited Method for organic barc and photoresist trimming process
US6716570B2 (en) * 2002-05-23 2004-04-06 Institute Of Microelectronics Low temperature resist trimming process
US6849151B2 (en) * 2002-08-07 2005-02-01 Michael S. Barnes Monitoring substrate processing by detecting reflectively diffracted light
US20050081781A1 (en) * 2003-10-17 2005-04-21 Taiwan Semiconductor Manufacturing Co. Fully dry, Si recess free process for removing high k dielectric layer
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US20030165755A1 (en) * 2002-03-01 2003-09-04 Applied Materials, Inc. Methodology for repeatable post etch CD in a production tool
US20030230551A1 (en) * 2002-06-14 2003-12-18 Akira Kagoshima Etching system and etching method
CN1464341A (zh) * 2002-06-14 2003-12-31 联华电子股份有限公司 图案转移的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Advanced gate process critical dimension control in semiconductor manufacturing. H.Sasano,W.Liu,David,S.L.Mui,K.Yoo,J.Yamartino.2003 IEEE International symposium on semiconductor manufacturing. conferecce proceedings. 2003 *

Also Published As

Publication number Publication date
CN1906747A (zh) 2007-01-31
EP1730769A2 (en) 2006-12-13
EP1730769B1 (en) 2016-07-06
KR101142709B1 (ko) 2012-05-03
JP2007531054A (ja) 2007-11-01
WO2005104217A3 (en) 2005-12-29
US20050221619A1 (en) 2005-10-06
TWI270121B (en) 2007-01-01
KR20070005921A (ko) 2007-01-10
TW200537598A (en) 2005-11-16
WO2005104217A2 (en) 2005-11-03
US6893975B1 (en) 2005-05-17

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