CN101133682B - 用于蚀刻具有受控制的制程结果分配的方法 - Google Patents

用于蚀刻具有受控制的制程结果分配的方法 Download PDF

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Publication number
CN101133682B
CN101133682B CN200680006797XA CN200680006797A CN101133682B CN 101133682 B CN101133682 B CN 101133682B CN 200680006797X A CN200680006797X A CN 200680006797XA CN 200680006797 A CN200680006797 A CN 200680006797A CN 101133682 B CN101133682 B CN 101133682B
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China
Prior art keywords
base material
etching
substrate
processing procedure
control handle
Prior art date
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Expired - Fee Related
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CN200680006797XA
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English (en)
Chinese (zh)
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CN101133682A (zh
Inventor
T·J·克罗皮尼基
T·帕纳古普洛斯
N·加尼
W·保尔
M·盛
J·P·霍兰
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/246,012 external-priority patent/US8075729B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2006/007525 external-priority patent/WO2006094162A2/en
Publication of CN101133682A publication Critical patent/CN101133682A/zh
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Publication of CN101133682B publication Critical patent/CN101133682B/zh
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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200680006797XA 2005-03-03 2006-03-02 用于蚀刻具有受控制的制程结果分配的方法 Expired - Fee Related CN101133682B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US65869805P 2005-03-03 2005-03-03
US60/658,698 2005-03-03
US11/246,012 US8075729B2 (en) 2004-10-07 2005-10-07 Method and apparatus for controlling temperature of a substrate
US11/246,012 2005-10-07
PCT/US2006/007525 WO2006094162A2 (en) 2005-03-03 2006-03-02 Method for etching having a controlled distribution of process results

Publications (2)

Publication Number Publication Date
CN101133682A CN101133682A (zh) 2008-02-27
CN101133682B true CN101133682B (zh) 2011-07-20

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JP (1) JP2008532324A (https=)
CN (1) CN101133682B (https=)
TW (1) TWI323011B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192664A (ja) 2010-03-11 2011-09-29 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
CN102386077B (zh) * 2010-09-03 2014-05-14 中芯国际集成电路制造(上海)有限公司 一种制作半导体器件的方法
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112884302B (zh) * 2021-02-01 2024-01-30 杭州市电力设计院有限公司 一种电力物资管理方法
KR20250028381A (ko) * 2022-07-01 2025-02-28 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 제어 방법 및 기판 처리 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4237317B2 (ja) * 1997-12-26 2009-03-11 株式会社日立製作所 プラズマ処理装置
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma

Also Published As

Publication number Publication date
JP2008532324A (ja) 2008-08-14
TWI323011B (en) 2010-04-01
CN101133682A (zh) 2008-02-27
TW200727359A (en) 2007-07-16

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SE01 Entry into force of request for substantive examination
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C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: APPLIED MATERIALS, Inc.

Address before: California, USA

Patentee before: APPLIED MATERIALS, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110720