JP2009139379A5 - - Google Patents
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- JP2009139379A5 JP2009139379A5 JP2008308265A JP2008308265A JP2009139379A5 JP 2009139379 A5 JP2009139379 A5 JP 2009139379A5 JP 2008308265 A JP2008308265 A JP 2008308265A JP 2008308265 A JP2008308265 A JP 2008308265A JP 2009139379 A5 JP2009139379 A5 JP 2009139379A5
- Authority
- JP
- Japan
- Prior art keywords
- vertical wall
- electron beam
- directing
- ion beam
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 74
- 238000010894 electron beam technology Methods 0.000 claims description 40
- 238000010884 ion-beam technique Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 230000007547 defect Effects 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000003801 milling Methods 0.000 claims description 6
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 11
- 230000002708 enhancing effect Effects 0.000 claims 7
- 230000001939 inductive effect Effects 0.000 claims 2
- 238000007689 inspection Methods 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000011253 protective coating Substances 0.000 claims 1
- 238000005034 decoration Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US99299807P | 2007-12-06 | 2007-12-06 | |
| US60/992,998 | 2007-12-06 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014062055A Division JP5882381B2 (ja) | 2007-12-06 | 2014-03-25 | デコレーションを用いたスライス・アンド・ビュー |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009139379A JP2009139379A (ja) | 2009-06-25 |
| JP2009139379A5 true JP2009139379A5 (https=) | 2015-12-24 |
| JP5873227B2 JP5873227B2 (ja) | 2016-03-01 |
Family
ID=40456730
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008308265A Active JP5873227B2 (ja) | 2007-12-06 | 2008-12-03 | デコレーションを用いたスライス・アンド・ビュー |
| JP2014062055A Active JP5882381B2 (ja) | 2007-12-06 | 2014-03-25 | デコレーションを用いたスライス・アンド・ビュー |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014062055A Active JP5882381B2 (ja) | 2007-12-06 | 2014-03-25 | デコレーションを用いたスライス・アンド・ビュー |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7858936B2 (https=) |
| EP (1) | EP2068160B1 (https=) |
| JP (2) | JP5873227B2 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138716B2 (en) * | 2003-06-27 | 2006-11-21 | Intel Corporation | Addition of metal layers with signal reallocation to a microprocessor for increased frequency and lower power |
| EP1501115B1 (en) | 2003-07-14 | 2009-07-01 | FEI Company | Dual beam system |
| US8058613B2 (en) * | 2008-10-28 | 2011-11-15 | William Marsh Rice University | Micromechanical devices for materials characterization |
| JP5649583B2 (ja) | 2008-10-31 | 2015-01-07 | エフ イー アイ カンパニFei Company | 加工終点検出方法及び装置 |
| JP5702552B2 (ja) | 2009-05-28 | 2015-04-15 | エフ イー アイ カンパニFei Company | デュアルビームシステムの制御方法 |
| NL2004888A (en) * | 2009-06-29 | 2010-12-30 | Asml Netherlands Bv | Deposition method and apparatus. |
| JP2011133176A (ja) * | 2009-12-24 | 2011-07-07 | Hitachi Kokusai Electric Inc | 標的装置 |
| DE102010003056B9 (de) | 2010-03-19 | 2014-07-31 | Carl Zeiss Microscopy Gmbh | Verfahren zur Erzeugung von Bildern einer Probe |
| US8350237B2 (en) | 2010-03-31 | 2013-01-08 | Fei Company | Automated slice milling for viewing a feature |
| DE102010024625A1 (de) * | 2010-06-22 | 2011-12-22 | Carl Zeiss Nts Gmbh | Verfahren zum Bearbeiten eines Objekts |
| JP2012242146A (ja) * | 2011-05-17 | 2012-12-10 | Hitachi High-Technologies Corp | 走査電子顕微鏡及び試料作成方法 |
| WO2013039891A1 (en) | 2011-09-12 | 2013-03-21 | Fei Company | Glancing angle mill |
| JP5969233B2 (ja) * | 2012-03-22 | 2016-08-17 | 株式会社日立ハイテクサイエンス | 断面加工観察方法及び装置 |
| US8502172B1 (en) * | 2012-06-26 | 2013-08-06 | Fei Company | Three dimensional fiducial |
| WO2014014446A1 (en) * | 2012-07-16 | 2014-01-23 | Fei Company | Endpointing for focused ion beam processing |
| KR102155834B1 (ko) * | 2012-10-05 | 2020-09-14 | 에프이아이 컴파니 | 높은 종횡비 구조 분석 |
| TWI607498B (zh) * | 2012-10-05 | 2017-12-01 | Fei公司 | 使用帶電粒子束曝露樣品中所關注特徵的方法及系統 |
| JP6355318B2 (ja) * | 2012-11-15 | 2018-07-11 | 株式会社日立ハイテクサイエンス | 断面加工観察方法及び装置 |
| US8895923B2 (en) | 2012-11-20 | 2014-11-25 | Dcg Systems, Inc. | System and method for non-contact microscopy for three-dimensional pre-characterization of a sample for fast and non-destructive on sample navigation during nanoprobing |
| EP2816585A1 (en) * | 2013-06-17 | 2014-12-24 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam system and method of operating thereof |
| JP5464535B1 (ja) * | 2013-07-23 | 2014-04-09 | 株式会社日立ハイテクノロジーズ | Ebsd検出器で所望箇所を容易に分析できる荷電粒子線装置およびその制御方法 |
| US9218940B1 (en) * | 2014-05-30 | 2015-12-22 | Fei Company | Method and apparatus for slice and view sample imaging |
| US9378927B2 (en) | 2014-09-11 | 2016-06-28 | Fei Company | AutoSlice and view undercut method |
| JP6423222B2 (ja) * | 2014-09-26 | 2018-11-14 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP6310864B2 (ja) * | 2015-01-13 | 2018-04-11 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| US9978586B2 (en) * | 2015-11-06 | 2018-05-22 | Fei Company | Method of material deposition |
| DE102016002883B4 (de) * | 2016-03-09 | 2023-05-17 | Carl Zeiss Microscopy Gmbh | Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu |
| US10082470B2 (en) * | 2016-09-27 | 2018-09-25 | Kla-Tencor Corporation | Defect marking for semiconductor wafer inspection |
| JP7113613B2 (ja) * | 2016-12-21 | 2022-08-05 | エフ イー アイ カンパニ | 欠陥分析 |
| US10928740B2 (en) * | 2017-02-03 | 2021-02-23 | Kla Corporation | Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer |
| JP7719089B2 (ja) | 2020-03-13 | 2025-08-05 | カール・ツァイス・エスエムティー・ゲーエムベーハー | ウェハ中の検査ボリュームの断面画像化の方法 |
| DE102021210019A1 (de) * | 2021-09-10 | 2023-03-16 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren eines Defekts einer Probe mit einem fokussierten Teilchenstrahl |
| US11749495B2 (en) * | 2021-10-05 | 2023-09-05 | KLA Corp. | Bandpass charged particle energy filtering detector for charged particle tools |
| DE102023134499A1 (de) * | 2023-09-18 | 2025-03-20 | Raith Gmbh | Untersuchungsverfahren für eine Halbleiterprobe mittels eines Sekundärionen-Massenspektrometers mit einem fokussierten Ionenstrahl und Analysevorrichtung dafür |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698397A (en) * | 1995-06-07 | 1997-12-16 | Sri International | Up-converting reporters for biological and other assays using laser excitation techniques |
| US5435850A (en) * | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
| JPH08329876A (ja) * | 1995-05-30 | 1996-12-13 | Hitachi Ltd | 観察試料作成方法及びその装置 |
| US5851413A (en) * | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
| US5990478A (en) * | 1997-07-10 | 1999-11-23 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for preparing thin specimens consisting of domains of different materials |
| JP3457875B2 (ja) * | 1998-01-27 | 2003-10-20 | 日本電子株式会社 | Fib−sem装置における試料断面観察方法およびfib−sem装置 |
| DE19859877A1 (de) * | 1998-12-23 | 2000-06-29 | Robert Magerle | Nanotomographie |
| NL1021376C1 (nl) * | 2002-09-02 | 2004-03-03 | Fei Co | Werkwijze voor het verkrijgen van een deeltjes-optische afbeelding van een sample in een deeltjes-optisch toestel. |
| US7103505B2 (en) * | 2002-11-12 | 2006-09-05 | Fei Company | Defect analyzer |
| JP2004191358A (ja) * | 2002-11-27 | 2004-07-08 | Seiko Instruments Inc | 複合荷電粒子ビームによる試料作製方法および装置 |
| JP2004226079A (ja) * | 2003-01-20 | 2004-08-12 | Seiko Instruments Inc | 表面あるいは断面加工観察方法及びその装置 |
| US6881955B2 (en) * | 2003-06-26 | 2005-04-19 | International Business Machines Corporation | Metrology process for enhancing image contrast |
| US7135123B1 (en) * | 2004-01-14 | 2006-11-14 | Credence Systems Corporation | Method and system for integrated circuit backside navigation |
| NL1027462C2 (nl) * | 2004-11-09 | 2006-05-10 | Koninkl Philips Electronics Nv | Werkwijze voor het lokaliseren van fluorescente markers. |
| JP2006221961A (ja) * | 2005-02-10 | 2006-08-24 | Seiko Epson Corp | チップの断面観察方法 |
| US7312448B2 (en) * | 2005-04-06 | 2007-12-25 | Carl Zeiss Nts Gmbh | Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy |
| JP4627682B2 (ja) * | 2005-05-27 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | 試料作製装置および方法 |
| JP4520905B2 (ja) * | 2005-06-10 | 2010-08-11 | 株式会社日立ハイテクノロジーズ | 解析装置、プローブの制御方法および解析システム |
| US7348556B2 (en) * | 2005-07-19 | 2008-03-25 | Fei Company | Method of measuring three-dimensional surface roughness of a structure |
| EP1801593A1 (en) * | 2005-12-22 | 2007-06-27 | Koninklijke Philips Electronics N.V. | A method of imaging biological specimens using inorganic nanoparticles as label agents |
| US7709792B2 (en) * | 2006-01-12 | 2010-05-04 | Kla-Tencor Technologies Corporation | Three-dimensional imaging using electron beam activated chemical etch |
| EP1890136A1 (en) * | 2006-08-16 | 2008-02-20 | FEI Company | Method for obtaining images from slices of a specimen |
| US8835880B2 (en) * | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
-
2008
- 2008-12-03 JP JP2008308265A patent/JP5873227B2/ja active Active
- 2008-12-04 US US12/328,581 patent/US7858936B2/en active Active
- 2008-12-05 EP EP08170761.4A patent/EP2068160B1/en not_active Not-in-force
-
2014
- 2014-03-25 JP JP2014062055A patent/JP5882381B2/ja active Active
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