JP5873227B2 - デコレーションを用いたスライス・アンド・ビュー - Google Patents

デコレーションを用いたスライス・アンド・ビュー Download PDF

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Publication number
JP5873227B2
JP5873227B2 JP2008308265A JP2008308265A JP5873227B2 JP 5873227 B2 JP5873227 B2 JP 5873227B2 JP 2008308265 A JP2008308265 A JP 2008308265A JP 2008308265 A JP2008308265 A JP 2008308265A JP 5873227 B2 JP5873227 B2 JP 5873227B2
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vertical wall
electron beam
directing
ion beam
substrate
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Japanese (ja)
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JP2009139379A5 (https=
JP2009139379A (ja
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マシュー・ブレイ
マーク・カスターニャ
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エフ・イ−・アイ・カンパニー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2008308265A 2007-12-06 2008-12-03 デコレーションを用いたスライス・アンド・ビュー Active JP5873227B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99299807P 2007-12-06 2007-12-06
US60/992,998 2007-12-06

Related Child Applications (1)

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JP2014062055A Division JP5882381B2 (ja) 2007-12-06 2014-03-25 デコレーションを用いたスライス・アンド・ビュー

Publications (3)

Publication Number Publication Date
JP2009139379A JP2009139379A (ja) 2009-06-25
JP2009139379A5 JP2009139379A5 (https=) 2015-12-24
JP5873227B2 true JP5873227B2 (ja) 2016-03-01

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Family Applications (2)

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JP2008308265A Active JP5873227B2 (ja) 2007-12-06 2008-12-03 デコレーションを用いたスライス・アンド・ビュー
JP2014062055A Active JP5882381B2 (ja) 2007-12-06 2014-03-25 デコレーションを用いたスライス・アンド・ビュー

Family Applications After (1)

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JP2014062055A Active JP5882381B2 (ja) 2007-12-06 2014-03-25 デコレーションを用いたスライス・アンド・ビュー

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US (1) US7858936B2 (https=)
EP (1) EP2068160B1 (https=)
JP (2) JP5873227B2 (https=)

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US8350237B2 (en) 2010-03-31 2013-01-08 Fei Company Automated slice milling for viewing a feature
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JP2012242146A (ja) * 2011-05-17 2012-12-10 Hitachi High-Technologies Corp 走査電子顕微鏡及び試料作成方法
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WO2014014446A1 (en) * 2012-07-16 2014-01-23 Fei Company Endpointing for focused ion beam processing
KR102155834B1 (ko) * 2012-10-05 2020-09-14 에프이아이 컴파니 높은 종횡비 구조 분석
TWI607498B (zh) * 2012-10-05 2017-12-01 Fei公司 使用帶電粒子束曝露樣品中所關注特徵的方法及系統
JP6355318B2 (ja) * 2012-11-15 2018-07-11 株式会社日立ハイテクサイエンス 断面加工観察方法及び装置
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JP5464535B1 (ja) * 2013-07-23 2014-04-09 株式会社日立ハイテクノロジーズ Ｅｂｓｄ検出器で所望箇所を容易に分析できる荷電粒子線装置およびその制御方法
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JP6423222B2 (ja) * 2014-09-26 2018-11-14 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP6310864B2 (ja) * 2015-01-13 2018-04-11 株式会社日立ハイテクノロジーズ 検査装置
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
DE102016002883B4 (de) * 2016-03-09 2023-05-17 Carl Zeiss Microscopy Gmbh Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu
US10082470B2 (en) * 2016-09-27 2018-09-25 Kla-Tencor Corporation Defect marking for semiconductor wafer inspection
JP7113613B2 (ja) * 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
US10928740B2 (en) * 2017-02-03 2021-02-23 Kla Corporation Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer
JP7719089B2 (ja) 2020-03-13 2025-08-05 カール・ツァイス・エスエムティー・ゲーエムベーハー ウェハ中の検査ボリュームの断面画像化の方法
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Also Published As

Publication number Publication date
JP5882381B2 (ja) 2016-03-09
EP2068160A3 (en) 2011-03-23
JP2014167474A (ja) 2014-09-11
EP2068160A2 (en) 2009-06-10
EP2068160B1 (en) 2015-02-18
JP2009139379A (ja) 2009-06-25
US20090242759A1 (en) 2009-10-01
US7858936B2 (en) 2010-12-28

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