JP2009204611A5 - - Google Patents

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Publication number
JP2009204611A5
JP2009204611A5 JP2009040442A JP2009040442A JP2009204611A5 JP 2009204611 A5 JP2009204611 A5 JP 2009204611A5 JP 2009040442 A JP2009040442 A JP 2009040442A JP 2009040442 A JP2009040442 A JP 2009040442A JP 2009204611 A5 JP2009204611 A5 JP 2009204611A5
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sample
drift
imaging
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processing
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JP2009040442A
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Japanese (ja)
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JP5441242B2 (ja
JP2009204611A (ja
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Priority claimed from US12/039,535 external-priority patent/US7880151B2/en
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JP2009040442A 2008-02-28 2009-02-24 ビーム加工のための改善されたビーム位置決め Active JP5441242B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/039,535 US7880151B2 (en) 2008-02-28 2008-02-28 Beam positioning for beam processing
US12/039,535 2008-02-28

Publications (3)

Publication Number Publication Date
JP2009204611A JP2009204611A (ja) 2009-09-10
JP2009204611A5 true JP2009204611A5 (https=) 2014-01-16
JP5441242B2 JP5441242B2 (ja) 2014-03-12

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JP2009040442A Active JP5441242B2 (ja) 2008-02-28 2009-02-24 ビーム加工のための改善されたビーム位置決め

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US (1) US7880151B2 (https=)
EP (1) EP2096663B1 (https=)
JP (1) JP5441242B2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455821B2 (en) 2006-10-20 2013-06-04 Fei Company Method for S/TEM sample analysis
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
US8543237B2 (en) * 2007-09-17 2013-09-24 Conoptica As Rotating part position and change finding method and apparatus
JP5296413B2 (ja) * 2008-05-15 2013-09-25 株式会社日立ハイテクサイエンス 複合荷電粒子ビーム装置を用いた断面画像取得方法および複合荷電粒子ビーム装置
DE102008042179B9 (de) * 2008-09-17 2013-10-10 Carl Zeiss Microscopy Gmbh Verfahren zur Analyse einer Probe
JP5462875B2 (ja) * 2009-07-16 2014-04-02 株式会社日立ハイテクノロジーズ 荷電粒子線顕微鏡及びそれを用いた測定方法
EP2400506A1 (en) * 2010-06-23 2011-12-28 GSI Helmholtzzentrum für Schwerionenforschung GmbH Particle beam generating device
US8432944B2 (en) 2010-06-25 2013-04-30 KLA-Technor Corporation Extending the lifetime of a deep UV laser in a wafer inspection tool
EP2610889A3 (en) 2011-12-27 2015-05-06 Fei Company Drift control in a charged particle beam system
CN104303257B (zh) 2012-05-21 2018-03-30 Fei 公司 用于tem观察的薄片的制备
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
US8766213B2 (en) 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9991090B2 (en) * 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
US8779357B1 (en) * 2013-03-15 2014-07-15 Fei Company Multiple image metrology
US9995763B2 (en) * 2014-02-24 2018-06-12 Bruker Nano, Inc. Precise probe placement in automated scanning probe microscopy systems
US9619728B2 (en) * 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
KR102145816B1 (ko) 2016-02-26 2020-08-19 주식회사 히타치하이테크 이온 밀링 장치, 및 이온 밀링 방법
DE102016002883B4 (de) * 2016-03-09 2023-05-17 Carl Zeiss Microscopy Gmbh Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu
KR102657067B1 (ko) 2016-07-07 2024-04-16 삼성전자주식회사 하전 입자 빔 노광 방법 및 보정 방법
WO2018182640A1 (en) * 2017-03-30 2018-10-04 Intel Corporation Method of sample preparation using dual ion beam trenching
DE102018209562B3 (de) 2018-06-14 2019-12-12 Carl Zeiss Smt Gmbh Vorrichtungen und Verfahren zur Untersuchung und/oder Bearbeitung eines Elements für die Photolithographie
US10809637B1 (en) * 2019-05-30 2020-10-20 Applied Materials, Inc. Learning based digital corrections to compensate variations on lithography systems with multiple imaging units
US11114275B2 (en) * 2019-07-02 2021-09-07 Fei Company Methods and systems for acquiring electron backscatter diffraction patterns
US12581363B2 (en) 2019-07-17 2026-03-17 Telefonaktiebolaget Lm Ericsson (Publ) Methods and apparatuses for load balance
JP2020194789A (ja) * 2020-08-11 2020-12-03 株式会社日立ハイテク イオンミリング方法、およびイオンミリング装置
TWI837451B (zh) * 2021-01-19 2024-04-01 台灣積體電路製造股份有限公司 對一結構加工之機台及方法
CN114823259B (zh) * 2021-01-19 2026-04-21 台湾积体电路制造股份有限公司 用于对结构加工的机台及方法
CN113324488B (zh) * 2021-05-14 2023-04-18 长江存储科技有限责任公司 一种厚度测量方法和系统
JP2023039178A (ja) * 2021-09-08 2023-03-20 日本電子株式会社 荷電粒子ビーム描画装置及び荷電粒子ビーム描画装置の制御方法
DE102021213163A1 (de) 2021-11-23 2023-05-25 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Kalibrierung eines Arbeitsvorgangs auf einer Photomaske
DE102021213160B4 (de) 2021-11-23 2025-10-09 Carl Zeiss Smt Gmbh Verfahren und Vorrichtungen zur Untersuchung und/oder Bearbeitung eines Objekts für die Lithographie
JP7465299B2 (ja) 2022-03-23 2024-04-10 日本電子株式会社 荷電粒子線装置
DE102023203825A1 (de) 2023-04-25 2024-05-16 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen, insbesondere zum Korrigieren, eines Strahlpositionierfehlers
WO2025078106A1 (en) * 2023-10-12 2025-04-17 Asml Netherlands B.V. Systems and methods for distortion correction in charged-particle beam imaging
KR20260009751A (ko) * 2024-07-11 2026-01-20 에프이아이 컴파니 시간 관련 및 품질 관련 하전 입자 빔 스캐닝 매개변수 선택

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788139B2 (ja) 1991-09-25 1998-08-20 株式会社日立製作所 電子線描画装置
JP3221797B2 (ja) * 1994-06-14 2001-10-22 株式会社日立製作所 試料作成方法及びその装置
US5916424A (en) 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US5942805A (en) 1996-12-20 1999-08-24 Intel Corporation Fiducial for aligning an integrated circuit die
US5847821A (en) 1997-07-10 1998-12-08 Advanced Micro Devices, Inc. Use of fiducial marks for improved blank wafer defect review
US6424734B1 (en) 1998-04-03 2002-07-23 Cognex Corporation Fiducial mark search using sub-models
JP3648384B2 (ja) * 1998-07-03 2005-05-18 株式会社日立製作所 集束イオンビーム加工方法及び加工装置
JP2000133567A (ja) * 1998-10-23 2000-05-12 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
TW460755B (en) * 1998-12-16 2001-10-21 Asm Lithography Bv Lithographic projection apparatus
JP4137329B2 (ja) * 2000-01-11 2008-08-20 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム加工方法
US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6838380B2 (en) 2001-01-26 2005-01-04 Fei Company Fabrication of high resistivity structures using focused ion beams
WO2002071031A1 (en) 2001-03-01 2002-09-12 Moore Thomas M Total release method for sample extraction from a charged particle instrument
US7160475B2 (en) 2002-11-21 2007-01-09 Fei Company Fabrication of three dimensional structures
JP2004253232A (ja) * 2003-02-20 2004-09-09 Renesas Technology Corp 試料固定台
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
NL1029982C2 (nl) 2005-09-19 2007-03-20 Fei Co Werkwijze voor het instellen van de werkingssfeer van een toestelcomponent op een vooraf vastgesteld element.
US7625679B2 (en) * 2005-09-23 2009-12-01 Applied Materials, Inc. Method of aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate
US7660687B1 (en) * 2006-05-25 2010-02-09 Kla-Tencor Corporation Robust measurement of parameters
US8455821B2 (en) 2006-10-20 2013-06-04 Fei Company Method for S/TEM sample analysis

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