JP2009204611A5 - - Google Patents
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- JP2009204611A5 JP2009204611A5 JP2009040442A JP2009040442A JP2009204611A5 JP 2009204611 A5 JP2009204611 A5 JP 2009204611A5 JP 2009040442 A JP2009040442 A JP 2009040442A JP 2009040442 A JP2009040442 A JP 2009040442A JP 2009204611 A5 JP2009204611 A5 JP 2009204611A5
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- sample
- drift
- imaging
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- processing
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- 239000000523 sample Substances 0.000 claims description 111
- 238000000034 method Methods 0.000 claims description 77
- 238000003384 imaging method Methods 0.000 claims description 76
- 238000012545 processing Methods 0.000 claims description 60
- 238000010884 ion-beam technique Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 19
- 238000003754 machining Methods 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 15
- 238000010894 electron beam technology Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 12
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- 230000008859 change Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
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- 241000446313 Lamella Species 0.000 description 54
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- 238000003909 pattern recognition Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- YLJREFDVOIBQDA-UHFFFAOYSA-N tacrine Chemical compound C1=CC=C2C(N)=C(CCCC3)C3=NC2=C1 YLJREFDVOIBQDA-UHFFFAOYSA-N 0.000 description 1
- 229960001685 tacrine Drugs 0.000 description 1
Images
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/039,535 US7880151B2 (en) | 2008-02-28 | 2008-02-28 | Beam positioning for beam processing |
| US12/039,535 | 2008-02-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009204611A JP2009204611A (ja) | 2009-09-10 |
| JP2009204611A5 true JP2009204611A5 (https=) | 2014-01-16 |
| JP5441242B2 JP5441242B2 (ja) | 2014-03-12 |
Family
ID=40637934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009040442A Active JP5441242B2 (ja) | 2008-02-28 | 2009-02-24 | ビーム加工のための改善されたビーム位置決め |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7880151B2 (https=) |
| EP (1) | EP2096663B1 (https=) |
| JP (1) | JP5441242B2 (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8455821B2 (en) | 2006-10-20 | 2013-06-04 | Fei Company | Method for S/TEM sample analysis |
| EP2095134B1 (en) | 2006-10-20 | 2017-02-22 | FEI Company | Method and apparatus for sample extraction and handling |
| US8543237B2 (en) * | 2007-09-17 | 2013-09-24 | Conoptica As | Rotating part position and change finding method and apparatus |
| JP5296413B2 (ja) * | 2008-05-15 | 2013-09-25 | 株式会社日立ハイテクサイエンス | 複合荷電粒子ビーム装置を用いた断面画像取得方法および複合荷電粒子ビーム装置 |
| DE102008042179B9 (de) * | 2008-09-17 | 2013-10-10 | Carl Zeiss Microscopy Gmbh | Verfahren zur Analyse einer Probe |
| JP5462875B2 (ja) * | 2009-07-16 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | 荷電粒子線顕微鏡及びそれを用いた測定方法 |
| EP2400506A1 (en) * | 2010-06-23 | 2011-12-28 | GSI Helmholtzzentrum für Schwerionenforschung GmbH | Particle beam generating device |
| US8432944B2 (en) | 2010-06-25 | 2013-04-30 | KLA-Technor Corporation | Extending the lifetime of a deep UV laser in a wafer inspection tool |
| EP2610889A3 (en) | 2011-12-27 | 2015-05-06 | Fei Company | Drift control in a charged particle beam system |
| CN104303257B (zh) | 2012-05-21 | 2018-03-30 | Fei 公司 | 用于tem观察的薄片的制备 |
| US10465293B2 (en) * | 2012-08-31 | 2019-11-05 | Fei Company | Dose-based end-pointing for low-kV FIB milling TEM sample preparation |
| US8766213B2 (en) | 2012-09-07 | 2014-07-01 | Fei Company | Automated method for coincident alignment of a laser beam and a charged particle beam |
| US9991090B2 (en) * | 2012-11-15 | 2018-06-05 | Fei Company | Dual laser beam system used with an electron microscope and FIB |
| US8779357B1 (en) * | 2013-03-15 | 2014-07-15 | Fei Company | Multiple image metrology |
| US9995763B2 (en) * | 2014-02-24 | 2018-06-12 | Bruker Nano, Inc. | Precise probe placement in automated scanning probe microscopy systems |
| US9619728B2 (en) * | 2015-05-31 | 2017-04-11 | Fei Company | Dynamic creation of backup fiducials |
| KR102145816B1 (ko) | 2016-02-26 | 2020-08-19 | 주식회사 히타치하이테크 | 이온 밀링 장치, 및 이온 밀링 방법 |
| DE102016002883B4 (de) * | 2016-03-09 | 2023-05-17 | Carl Zeiss Microscopy Gmbh | Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu |
| KR102657067B1 (ko) | 2016-07-07 | 2024-04-16 | 삼성전자주식회사 | 하전 입자 빔 노광 방법 및 보정 방법 |
| WO2018182640A1 (en) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Method of sample preparation using dual ion beam trenching |
| DE102018209562B3 (de) | 2018-06-14 | 2019-12-12 | Carl Zeiss Smt Gmbh | Vorrichtungen und Verfahren zur Untersuchung und/oder Bearbeitung eines Elements für die Photolithographie |
| US10809637B1 (en) * | 2019-05-30 | 2020-10-20 | Applied Materials, Inc. | Learning based digital corrections to compensate variations on lithography systems with multiple imaging units |
| US11114275B2 (en) * | 2019-07-02 | 2021-09-07 | Fei Company | Methods and systems for acquiring electron backscatter diffraction patterns |
| US12581363B2 (en) | 2019-07-17 | 2026-03-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Methods and apparatuses for load balance |
| JP2020194789A (ja) * | 2020-08-11 | 2020-12-03 | 株式会社日立ハイテク | イオンミリング方法、およびイオンミリング装置 |
| TWI837451B (zh) * | 2021-01-19 | 2024-04-01 | 台灣積體電路製造股份有限公司 | 對一結構加工之機台及方法 |
| CN114823259B (zh) * | 2021-01-19 | 2026-04-21 | 台湾积体电路制造股份有限公司 | 用于对结构加工的机台及方法 |
| CN113324488B (zh) * | 2021-05-14 | 2023-04-18 | 长江存储科技有限责任公司 | 一种厚度测量方法和系统 |
| JP2023039178A (ja) * | 2021-09-08 | 2023-03-20 | 日本電子株式会社 | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画装置の制御方法 |
| DE102021213163A1 (de) | 2021-11-23 | 2023-05-25 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Kalibrierung eines Arbeitsvorgangs auf einer Photomaske |
| DE102021213160B4 (de) | 2021-11-23 | 2025-10-09 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtungen zur Untersuchung und/oder Bearbeitung eines Objekts für die Lithographie |
| JP7465299B2 (ja) | 2022-03-23 | 2024-04-10 | 日本電子株式会社 | 荷電粒子線装置 |
| DE102023203825A1 (de) | 2023-04-25 | 2024-05-16 | Carl Zeiss Smt Gmbh | Verfahren zum Bestimmen, insbesondere zum Korrigieren, eines Strahlpositionierfehlers |
| WO2025078106A1 (en) * | 2023-10-12 | 2025-04-17 | Asml Netherlands B.V. | Systems and methods for distortion correction in charged-particle beam imaging |
| KR20260009751A (ko) * | 2024-07-11 | 2026-01-20 | 에프이아이 컴파니 | 시간 관련 및 품질 관련 하전 입자 빔 스캐닝 매개변수 선택 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2788139B2 (ja) | 1991-09-25 | 1998-08-20 | 株式会社日立製作所 | 電子線描画装置 |
| JP3221797B2 (ja) * | 1994-06-14 | 2001-10-22 | 株式会社日立製作所 | 試料作成方法及びその装置 |
| US5916424A (en) | 1996-04-19 | 1999-06-29 | Micrion Corporation | Thin film magnetic recording heads and systems and methods for manufacturing the same |
| US5942805A (en) | 1996-12-20 | 1999-08-24 | Intel Corporation | Fiducial for aligning an integrated circuit die |
| US5847821A (en) | 1997-07-10 | 1998-12-08 | Advanced Micro Devices, Inc. | Use of fiducial marks for improved blank wafer defect review |
| US6424734B1 (en) | 1998-04-03 | 2002-07-23 | Cognex Corporation | Fiducial mark search using sub-models |
| JP3648384B2 (ja) * | 1998-07-03 | 2005-05-18 | 株式会社日立製作所 | 集束イオンビーム加工方法及び加工装置 |
| JP2000133567A (ja) * | 1998-10-23 | 2000-05-12 | Advantest Corp | 電子ビーム露光方法及び電子ビーム露光装置 |
| TW460755B (en) * | 1998-12-16 | 2001-10-21 | Asm Lithography Bv | Lithographic projection apparatus |
| JP4137329B2 (ja) * | 2000-01-11 | 2008-08-20 | エスアイアイ・ナノテクノロジー株式会社 | 集束イオンビーム加工方法 |
| US6322672B1 (en) | 2000-03-10 | 2001-11-27 | Fei Company | Method and apparatus for milling copper interconnects in a charged particle beam system |
| US6838380B2 (en) | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
| WO2002071031A1 (en) | 2001-03-01 | 2002-09-12 | Moore Thomas M | Total release method for sample extraction from a charged particle instrument |
| US7160475B2 (en) | 2002-11-21 | 2007-01-09 | Fei Company | Fabrication of three dimensional structures |
| JP2004253232A (ja) * | 2003-02-20 | 2004-09-09 | Renesas Technology Corp | 試料固定台 |
| JP4520426B2 (ja) * | 2005-07-04 | 2010-08-04 | 株式会社ニューフレアテクノロジー | 電子ビームのビームドリフト補正方法及び電子ビームの描画方法 |
| NL1029982C2 (nl) | 2005-09-19 | 2007-03-20 | Fei Co | Werkwijze voor het instellen van de werkingssfeer van een toestelcomponent op een vooraf vastgesteld element. |
| US7625679B2 (en) * | 2005-09-23 | 2009-12-01 | Applied Materials, Inc. | Method of aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate |
| US7660687B1 (en) * | 2006-05-25 | 2010-02-09 | Kla-Tencor Corporation | Robust measurement of parameters |
| US8455821B2 (en) | 2006-10-20 | 2013-06-04 | Fei Company | Method for S/TEM sample analysis |
-
2008
- 2008-02-28 US US12/039,535 patent/US7880151B2/en active Active
-
2009
- 2009-02-20 EP EP09153259.8A patent/EP2096663B1/en active Active
- 2009-02-24 JP JP2009040442A patent/JP5441242B2/ja active Active
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