JP5441242B2 - ビーム加工のための改善されたビーム位置決め - Google Patents

ビーム加工のための改善されたビーム位置決め Download PDF

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JP5441242B2
JP5441242B2 JP2009040442A JP2009040442A JP5441242B2 JP 5441242 B2 JP5441242 B2 JP 5441242B2 JP 2009040442 A JP2009040442 A JP 2009040442A JP 2009040442 A JP2009040442 A JP 2009040442A JP 5441242 B2 JP5441242 B2 JP 5441242B2
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sample
drift
imaging
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processing
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JP2009204611A5 (https=
JP2009204611A (ja
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アンドリュー・ビー・ウェルズ
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laser Beam Processing (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2009040442A 2008-02-28 2009-02-24 ビーム加工のための改善されたビーム位置決め Active JP5441242B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/039,535 US7880151B2 (en) 2008-02-28 2008-02-28 Beam positioning for beam processing
US12/039,535 2008-02-28

Publications (3)

Publication Number Publication Date
JP2009204611A JP2009204611A (ja) 2009-09-10
JP2009204611A5 JP2009204611A5 (https=) 2014-01-16
JP5441242B2 true JP5441242B2 (ja) 2014-03-12

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ID=40637934

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JP2009040442A Active JP5441242B2 (ja) 2008-02-28 2009-02-24 ビーム加工のための改善されたビーム位置決め

Country Status (3)

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US (1) US7880151B2 (https=)
EP (1) EP2096663B1 (https=)
JP (1) JP5441242B2 (https=)

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US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
US8766213B2 (en) 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9991090B2 (en) * 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
US8779357B1 (en) * 2013-03-15 2014-07-15 Fei Company Multiple image metrology
US9995763B2 (en) * 2014-02-24 2018-06-12 Bruker Nano, Inc. Precise probe placement in automated scanning probe microscopy systems
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DE102016002883B4 (de) * 2016-03-09 2023-05-17 Carl Zeiss Microscopy Gmbh Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu
KR102657067B1 (ko) 2016-07-07 2024-04-16 삼성전자주식회사 하전 입자 빔 노광 방법 및 보정 방법
WO2018182640A1 (en) * 2017-03-30 2018-10-04 Intel Corporation Method of sample preparation using dual ion beam trenching
DE102018209562B3 (de) 2018-06-14 2019-12-12 Carl Zeiss Smt Gmbh Vorrichtungen und Verfahren zur Untersuchung und/oder Bearbeitung eines Elements für die Photolithographie
US10809637B1 (en) * 2019-05-30 2020-10-20 Applied Materials, Inc. Learning based digital corrections to compensate variations on lithography systems with multiple imaging units
US11114275B2 (en) * 2019-07-02 2021-09-07 Fei Company Methods and systems for acquiring electron backscatter diffraction patterns
US12581363B2 (en) 2019-07-17 2026-03-17 Telefonaktiebolaget Lm Ericsson (Publ) Methods and apparatuses for load balance
JP2020194789A (ja) * 2020-08-11 2020-12-03 株式会社日立ハイテク イオンミリング方法、およびイオンミリング装置
TWI837451B (zh) * 2021-01-19 2024-04-01 台灣積體電路製造股份有限公司 對一結構加工之機台及方法
CN114823259B (zh) * 2021-01-19 2026-04-21 台湾积体电路制造股份有限公司 用于对结构加工的机台及方法
CN113324488B (zh) * 2021-05-14 2023-04-18 长江存储科技有限责任公司 一种厚度测量方法和系统
JP2023039178A (ja) * 2021-09-08 2023-03-20 日本電子株式会社 荷電粒子ビーム描画装置及び荷電粒子ビーム描画装置の制御方法
DE102021213163A1 (de) 2021-11-23 2023-05-25 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Kalibrierung eines Arbeitsvorgangs auf einer Photomaske
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JP7465299B2 (ja) 2022-03-23 2024-04-10 日本電子株式会社 荷電粒子線装置
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Also Published As

Publication number Publication date
EP2096663B1 (en) 2014-12-17
US20090218488A1 (en) 2009-09-03
EP2096663A2 (en) 2009-09-02
JP2009204611A (ja) 2009-09-10
US7880151B2 (en) 2011-02-01
EP2096663A3 (en) 2009-10-14

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