JP2008529314A5 - - Google Patents

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Publication number
JP2008529314A5
JP2008529314A5 JP2007554154A JP2007554154A JP2008529314A5 JP 2008529314 A5 JP2008529314 A5 JP 2008529314A5 JP 2007554154 A JP2007554154 A JP 2007554154A JP 2007554154 A JP2007554154 A JP 2007554154A JP 2008529314 A5 JP2008529314 A5 JP 2008529314A5
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JP
Japan
Prior art keywords
plasma
limiting
duty cycle
substrate
oxide
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Application number
JP2007554154A
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English (en)
Japanese (ja)
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JP5172352B2 (ja
JP2008529314A (ja
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Publication date
Priority claimed from US11/050,471 external-priority patent/US7141514B2/en
Application filed filed Critical
Publication of JP2008529314A publication Critical patent/JP2008529314A/ja
Publication of JP2008529314A5 publication Critical patent/JP2008529314A5/ja
Application granted granted Critical
Publication of JP5172352B2 publication Critical patent/JP5172352B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007554154A 2005-02-02 2006-01-30 パルス化高周波源電力を使用する選択プラズマ再酸化プロセス Expired - Fee Related JP5172352B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/050,471 US7141514B2 (en) 2005-02-02 2005-02-02 Selective plasma re-oxidation process using pulsed RF source power
US11/050,471 2005-02-02
PCT/US2006/003250 WO2006083778A2 (en) 2005-02-02 2006-01-30 Selective plasma re-oxidation process using pulsed rf source power

Publications (3)

Publication Number Publication Date
JP2008529314A JP2008529314A (ja) 2008-07-31
JP2008529314A5 true JP2008529314A5 (OSRAM) 2012-09-13
JP5172352B2 JP5172352B2 (ja) 2013-03-27

Family

ID=36757157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007554154A Expired - Fee Related JP5172352B2 (ja) 2005-02-02 2006-01-30 パルス化高周波源電力を使用する選択プラズマ再酸化プロセス

Country Status (5)

Country Link
US (1) US7141514B2 (OSRAM)
EP (1) EP1851795A4 (OSRAM)
JP (1) JP5172352B2 (OSRAM)
KR (1) KR20070097558A (OSRAM)
WO (1) WO2006083778A2 (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
KR100951559B1 (ko) * 2007-01-03 2010-04-09 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
US8236706B2 (en) * 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
KR101893471B1 (ko) * 2011-02-15 2018-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티존 플라즈마 생성을 위한 방법 및 장치
US8993458B2 (en) 2012-02-13 2015-03-31 Applied Materials, Inc. Methods and apparatus for selective oxidation of a substrate
KR101994820B1 (ko) * 2012-07-26 2019-07-02 에스케이하이닉스 주식회사 실리콘함유막과 금속함유막이 적층된 반도체 구조물 및 그의 제조 방법
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

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US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
US5872052A (en) * 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US6045877A (en) * 1997-07-28 2000-04-04 Massachusetts Institute Of Technology Pyrolytic chemical vapor deposition of silicone films
JP3141827B2 (ja) * 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6355580B1 (en) * 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
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JP2002245777A (ja) * 2001-02-20 2002-08-30 Hitachi Ltd 半導体装置
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
JP2005530341A (ja) * 2002-06-12 2005-10-06 アプライド　マテリアルズ　インコーポレイテッド 基板を処理するためのプラズマ方法及び装置
WO2004038783A2 (en) * 2002-10-21 2004-05-06 Massachusetts Institute Of Technology Pecvd of organosilicate thin films
JP2004200550A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体装置の製造方法

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