JP2008527163A - 低融点合金の堆積により少なくとも一つの活性物質を担持する装置を製造するための方法 - Google Patents
低融点合金の堆積により少なくとも一つの活性物質を担持する装置を製造するための方法 Download PDFInfo
- Publication number
- JP2008527163A JP2008527163A JP2007547800A JP2007547800A JP2008527163A JP 2008527163 A JP2008527163 A JP 2008527163A JP 2007547800 A JP2007547800 A JP 2007547800A JP 2007547800 A JP2007547800 A JP 2007547800A JP 2008527163 A JP2008527163 A JP 2008527163A
- Authority
- JP
- Japan
- Prior art keywords
- ribbon
- alloy
- point alloy
- melting point
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 30
- 239000000956 alloy Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000008018 melting Effects 0.000 title claims abstract description 9
- 238000002844 melting Methods 0.000 title claims abstract description 9
- 230000008021 deposition Effects 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 38
- 239000013543 active substance Substances 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000005554 pickling Methods 0.000 claims abstract description 7
- 239000011149 active material Substances 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910000743 fusible alloy Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 abstract description 3
- 238000005507 spraying Methods 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 229910000497 Amalgam Inorganic materials 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012467 final product Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- KHZAWAWPXXNLGB-UHFFFAOYSA-N [Bi].[Pb].[Sn] Chemical compound [Bi].[Pb].[Sn] KHZAWAWPXXNLGB-UHFFFAOYSA-N 0.000 description 1
- DICWILYNZSJYMQ-UHFFFAOYSA-N [In].[Cu].[Ag] Chemical compound [In].[Cu].[Ag] DICWILYNZSJYMQ-UHFFFAOYSA-N 0.000 description 1
- KOTMHBOWRMSVPU-UHFFFAOYSA-N [Ni].[Ag].[In] Chemical compound [Ni].[Ag].[In] KOTMHBOWRMSVPU-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
- B32B15/015—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/003—Apparatus
- C23C2/0035—Means for continuously moving substrate through, into or out of the bath
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/003—Apparatus
- C23C2/0038—Apparatus characterised by the pre-treatment chambers located immediately upstream of the bath or occurring locally before the dipping process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/006—Pattern or selective deposits
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
- C23C2/024—Pretreatment of the material to be coated, e.g. for coating on selected surface areas by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/20—Means for producing, introducing, or replenishing gas or vapour during operation of the tube or lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/38—Control of maintenance of pressure in the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/24—Means for obtaining or maintaining the desired pressure within the vessel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Coating With Molten Metal (AREA)
- Photovoltaic Devices (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
Description
a)例えばある種の溶接用途における技術で公知のような、層流定在波中への部分浸漬による方法、
b)一定高さに維持した液体ジェットまたは噴流中への部分浸漬による方法、
c)適切なノズルからの小液滴の噴霧による方法、および
d)適切なディスペンサーからの液体分配による方法。
〔実施例1〕
厚さ0.35mmのニッケルメッキ鉄の延伸金属シートのリボンであって、内包円直径が0.28mmの正方形のメッシュ穴があいており、穴中心間距離で横列間が0.71mm、縦列間が0.85mmであり、ニッケルめっき層の厚さが約1μmであるリボンに、表面酸洗い処理を施した後、重量%組成In94%−Ag6%を有する液体状態にある合金浴中に浸漬し、110.8±6.0mg/cm2の量の物質を捕捉できた。
実施例1の試験を繰り返した。ただし、リボンの側縁を浴中に単純に浸漬する代わりに、垂直にしたリボンを液体合金の層流波に通すことによりリボンを液体合金で濡らした点のみが異なる。得られた合金捕捉量は110.2±3.3mg/cm2であり、変動幅を小さくできた。
実施例1の試験を繰り返した。ただし、厚さ0.40mmのニッケルメッキ鉄の延伸金属シートのリボンであって、内包円直径が0.26mmの正方形のメッシュ穴があいており、穴中心間距離で横列間が0.84mm、縦列間が0.95mmであり、ニッケルめっき層の厚さが約1μmであるリボンを用いた。In−Ag合金量の捕捉量は、112.8±5.4mg/cm2であった。
実施例3の試験を繰り返した。ただし、実施例2の濡らし方(金属バンドを液体合金の層流波に通す)を採用した。この場合も、110.8±3.5mg/cm2の捕捉量が得られ、高い再現性が得られた。
Claims (10)
- 金属材料のリボン(1)を用意する工程と、該リボンの側縁に沿って溶融状態の低融点合金の形態の活性物質の少なくとも一つのストリップ(13)を堆積する工程とを含む、少なくとも一つの活性物質を担持する装置(21、21’、・・・)を大量生産する方法であって、該リボン(1)が、不働態表面層を除去するために前処理された金属ネットまたは穴あき金属バンドから形成されることを特徴とする方法。
- 金属材料の前記リボンは0.20〜0.50mmの厚さを有し、穴は内包できる円の直径が0.45mm未満である寸法を有し、かつ、横列または縦列で隣接する穴の中心距離が0.55〜1.10mmであることを特徴とする請求項1に記載の方法。
- 前記金属リボンの少なくとも前記側縁を、前処理工程(2)で酸洗い浴中に、その後、液体低融点合金の浴(3)中に連続的に通すことを特徴とする請求項1に記載の方法。
- 前記低融点合金が80重量%以上のインジウムを含む2元または3元のインジウム基合金であることを特徴とする請求項1に記載の方法。
- 前記低融点合金が50重量%以上のビスマスを含む2元または3元のビスマス基合金であることを特徴とする請求項1に記載の方法。
- 液体状態にある前記合金の層流波中に、前記リボン(1)を垂直に保持して下端部を部分的に浸漬することにより、前記低融点合金の堆積を行なうことを特徴とする請求項3に記載の方法。
- 前記リボン(1)の下端部を垂直に保持し、液体状態にある前記合金の噴流またはジェットにより一定のレベルで打たせることにより、前記低融点合金の堆積を行なうことを特徴とする請求項3に記載の方法。
- 堆積工程(3)に続いて、リボン(1’)を長手方向に直角の平行線に沿って切断することにより、活性物質を担持する個々の前記装置(21、21’、・・・)を得ることを特徴とする請求項1に記載の方法。
- リボン(1)を横断線に沿ってパンチ加工することにより前記切断処理用に用意することを特徴とする請求項8に記載の方法。
- 堆積工程後かつ前記切断処理前に、前記酸洗い工程の残留物を除去するためにリボン(1’)を洗浄処理することを特徴とする請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2004A002516 | 2004-12-27 | ||
IT002516A ITMI20042516A1 (it) | 2004-12-27 | 2004-12-27 | Processo per produrre mediante deposizione di lega bassofondente dispositivi portanti almeno un materiale attivo |
PCT/IT2005/000744 WO2006070426A2 (en) | 2004-12-27 | 2005-12-20 | Process for manufacturing devices carrying at least one active material by deposition of a low-melting alloy |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008527163A true JP2008527163A (ja) | 2008-07-24 |
JP2008527163A5 JP2008527163A5 (ja) | 2008-11-20 |
JP4988594B2 JP4988594B2 (ja) | 2012-08-01 |
Family
ID=36579646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007547800A Expired - Fee Related JP4988594B2 (ja) | 2004-12-27 | 2005-12-20 | 低融点合金の堆積により少なくとも一つの活性物質を担持する装置を製造するための方法 |
Country Status (17)
Country | Link |
---|---|
US (1) | US8071172B2 (ja) |
EP (1) | EP1834006B1 (ja) |
JP (1) | JP4988594B2 (ja) |
KR (1) | KR20070100767A (ja) |
CN (1) | CN101090989B (ja) |
AR (1) | AR051868A1 (ja) |
AT (1) | ATE508213T1 (ja) |
BR (1) | BRPI0519499A2 (ja) |
CA (1) | CA2590987A1 (ja) |
DE (1) | DE602005027902D1 (ja) |
IL (1) | IL183866A0 (ja) |
IT (1) | ITMI20042516A1 (ja) |
MX (1) | MX2007007875A (ja) |
MY (1) | MY139734A (ja) |
RU (1) | RU2395617C2 (ja) |
TW (1) | TW200639272A (ja) |
WO (1) | WO2006070426A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1399507B1 (it) | 2010-04-21 | 2013-04-19 | Getters Spa | Lampada a scarica migliorata |
RU2521187C2 (ru) * | 2012-10-25 | 2014-06-27 | ООО "Биметалл Плюс" | Устройство для диффузионной металлизации в среде легкоплавких жидкометаллических растворов |
US10356478B2 (en) * | 2015-01-08 | 2019-07-16 | The Directv Group, Inc. | Systems and methods for spotted advertising and control of corresponding user interfaces and transactions via user receiving devices and mobile devices |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5077227A (ja) * | 1973-11-14 | 1975-06-24 | ||
JPS63241859A (ja) * | 1987-03-11 | 1988-10-07 | ハイドロ−ケベック | 電子伝導性シート上に支持された薄膜電極とその製造方法 |
JPH065343A (ja) * | 1992-04-24 | 1994-01-14 | Koa Corp | 金属板の孔内面へのはんだメッキ方法 |
JPH07169890A (ja) * | 1993-12-15 | 1995-07-04 | Hitachi Cable Ltd | 半導体装置用リードフレームおよびその製造方法 |
JPH08264154A (ja) * | 1995-03-24 | 1996-10-11 | Toshiba Lighting & Technol Corp | 低圧水銀蒸気放電ランプおよび照明装置 |
JP2000082440A (ja) * | 1997-10-31 | 2000-03-21 | Toshiba Lighting & Technology Corp | 放電ランプ、放電ランプ装置、蛍光ランプおよび蛍光ランプ装置 |
JP2003342782A (ja) * | 2002-05-23 | 2003-12-03 | Fuji Denshi Kogyo Kk | ストライプめっき条及びストライプめっき方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3519864A (en) | 1966-12-29 | 1970-07-07 | Sylvania Electric Prod | High pressure electric discharge device with barium peroxide getter and getter mounting structure |
US3525009A (en) | 1968-02-05 | 1970-08-18 | Tokyo Shibaura Electric Co | Low pressure mercury vapour discharge lamp including an alloy type getter coating |
NL158652B (nl) | 1969-06-27 | 1978-11-15 | Philips Nv | Werkwijze voor de vervaardiging van een lagedrukkwikdampontladingslamp. |
NL162244C (nl) | 1970-12-25 | 1980-04-15 | Philips Nv | Lagedrukkwikdampontladingslamp. |
US3657589A (en) * | 1969-10-20 | 1972-04-18 | Getters Spa | Mercury generation |
US4056750A (en) | 1976-12-17 | 1977-11-01 | Gte Sylvania Incorporated | Mercury dispenser for discharge lamps |
GB1575890A (en) | 1978-03-31 | 1980-10-01 | Thorn Electrical Ind Ltd | Heating of dosing capsule |
US4182971A (en) | 1978-07-10 | 1980-01-08 | Gte Sylvania Incorporated | Mercury-containing glass-capsule dispenser for discharge lamps |
CH648601A5 (fr) | 1979-07-31 | 1985-03-29 | Battelle Memorial Institute | Procede de revetement en continu d'un substrat metallique sur une partie au moins de sa surface par un autre metal et dispositif pour la mise en oeuvre de ce procede. |
US4282455A (en) | 1979-11-07 | 1981-08-04 | Gte Products Corporation | Mercury dispenser for arc discharge lamps |
JPH0354430B2 (ja) | 1980-10-22 | 1991-08-20 | ||
US4461981A (en) | 1981-12-26 | 1984-07-24 | Mitsubishi Denki Kabushiki Kaisha | Low pressure inert gas discharge device |
US4855643A (en) | 1983-03-10 | 1989-08-08 | Gte Products Corporation | Unsaturated vapor pressure type high pressure sodium lamp |
JPS60193253A (ja) | 1984-03-14 | 1985-10-01 | Toshiba Corp | 低圧水銀蒸気放電灯 |
US4754193A (en) | 1985-11-08 | 1988-06-28 | Gte Products Corporation | Mercury dispenser for arc discharge lamps |
FR2607967B1 (fr) * | 1986-12-04 | 1989-02-03 | Accumulateurs Fixes | Procede de fabrication d'electrodes plastifiees pour accumulateurs |
US4823047A (en) | 1987-10-08 | 1989-04-18 | Gte Products Corporation | Mercury dispenser for arc discharge lamps |
JPH01197959A (ja) * | 1988-02-02 | 1989-08-09 | Toshiba Corp | 低圧水銀蒸気放電灯用アマルガムおよびこのアマルガムを用いた低圧水銀蒸気放電灯 |
IT1227338B (it) | 1988-09-12 | 1991-04-08 | Getters Spa | Nastro getter atto ad emettere vapori di mercurio, utilizzabile nella formazione di catodi freddi per lampade fluorescenti. |
US5077094A (en) * | 1989-12-11 | 1991-12-31 | Battelle Development Corp. | Process for applying a metal coating to a metal strip by preheating the strip in a non-oxidizing atmosphere, passing the strip through a melt pool of the metal coating material, and rapidly cooling the back surface of the strip |
JP3205075B2 (ja) | 1992-07-27 | 2001-09-04 | 東芝ライテック株式会社 | 低圧水銀蒸気放電灯 |
JPH0676796A (ja) | 1992-08-31 | 1994-03-18 | Hitachi Ltd | 低圧放電灯 |
US5598069A (en) | 1993-09-30 | 1997-01-28 | Diablo Research Corporation | Amalgam system for electrodeless discharge lamp |
DE19511656C2 (de) * | 1995-03-30 | 1997-11-27 | Wieland Werke Ag | Partiell feuerverzinntes Band |
DE19521972A1 (de) | 1995-06-16 | 1996-12-19 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Verfahren zur Herstellung eines Kappenbandes für Entladungslampen |
GB9521373D0 (en) | 1995-10-18 | 1995-12-20 | Gen Electric | Electrodeless fluorescent lamp |
IT1277239B1 (it) | 1995-11-23 | 1997-11-05 | Getters Spa | Dispositivo per l'emissione di mercurio,l'assorbimento di gas reattivi e la schermatura dell'elettrodo all'interno di lampade |
DE29616879U1 (de) | 1996-09-30 | 1998-01-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH, 81543 München | Niederdruckentladungslampe |
IT1285988B1 (it) | 1996-11-22 | 1998-06-26 | Getters Spa | Dispensatore di ossigeno per lampade a scarica ad alta pressione |
US6626439B1 (en) * | 1997-08-29 | 2003-09-30 | Interface Solutions, Inc. | Edge coated gaskets and method of making same |
US6080173A (en) * | 1999-05-26 | 2000-06-27 | Idx Medical Ltd. | Tissue punching instrument |
-
2004
- 2004-12-27 IT IT002516A patent/ITMI20042516A1/it unknown
-
2005
- 2005-12-15 TW TW094144541A patent/TW200639272A/zh unknown
- 2005-12-20 BR BRPI0519499-7A patent/BRPI0519499A2/pt not_active IP Right Cessation
- 2005-12-20 DE DE602005027902T patent/DE602005027902D1/de active Active
- 2005-12-20 CN CN2005800450854A patent/CN101090989B/zh active Active
- 2005-12-20 WO PCT/IT2005/000744 patent/WO2006070426A2/en active Application Filing
- 2005-12-20 JP JP2007547800A patent/JP4988594B2/ja not_active Expired - Fee Related
- 2005-12-20 RU RU2007128769/02A patent/RU2395617C2/ru not_active IP Right Cessation
- 2005-12-20 MX MX2007007875A patent/MX2007007875A/es active IP Right Grant
- 2005-12-20 KR KR1020077017274A patent/KR20070100767A/ko not_active Application Discontinuation
- 2005-12-20 US US11/721,046 patent/US8071172B2/en not_active Expired - Fee Related
- 2005-12-20 CA CA002590987A patent/CA2590987A1/en not_active Abandoned
- 2005-12-20 EP EP05823860A patent/EP1834006B1/en active Active
- 2005-12-20 AT AT05823860T patent/ATE508213T1/de not_active IP Right Cessation
- 2005-12-23 MY MYPI20056193A patent/MY139734A/en unknown
- 2005-12-26 AR ARP050105529A patent/AR051868A1/es unknown
-
2007
- 2007-06-12 IL IL183866A patent/IL183866A0/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5077227A (ja) * | 1973-11-14 | 1975-06-24 | ||
JPS63241859A (ja) * | 1987-03-11 | 1988-10-07 | ハイドロ−ケベック | 電子伝導性シート上に支持された薄膜電極とその製造方法 |
JPH065343A (ja) * | 1992-04-24 | 1994-01-14 | Koa Corp | 金属板の孔内面へのはんだメッキ方法 |
JPH07169890A (ja) * | 1993-12-15 | 1995-07-04 | Hitachi Cable Ltd | 半導体装置用リードフレームおよびその製造方法 |
JPH08264154A (ja) * | 1995-03-24 | 1996-10-11 | Toshiba Lighting & Technol Corp | 低圧水銀蒸気放電ランプおよび照明装置 |
JP2000082440A (ja) * | 1997-10-31 | 2000-03-21 | Toshiba Lighting & Technology Corp | 放電ランプ、放電ランプ装置、蛍光ランプおよび蛍光ランプ装置 |
JP2003342782A (ja) * | 2002-05-23 | 2003-12-03 | Fuji Denshi Kogyo Kk | ストライプめっき条及びストライプめっき方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101090989A (zh) | 2007-12-19 |
CN101090989B (zh) | 2010-05-12 |
DE602005027902D1 (de) | 2011-06-16 |
RU2007128769A (ru) | 2009-02-10 |
EP1834006B1 (en) | 2011-05-04 |
TW200639272A (en) | 2006-11-16 |
BRPI0519499A2 (pt) | 2009-02-03 |
WO2006070426A3 (en) | 2007-06-07 |
ATE508213T1 (de) | 2011-05-15 |
IL183866A0 (en) | 2007-10-31 |
MX2007007875A (es) | 2007-07-13 |
WO2006070426A8 (en) | 2007-08-02 |
RU2395617C2 (ru) | 2010-07-27 |
CA2590987A1 (en) | 2006-07-06 |
ITMI20042516A1 (it) | 2005-03-27 |
EP1834006A2 (en) | 2007-09-19 |
KR20070100767A (ko) | 2007-10-11 |
AR051868A1 (es) | 2007-02-14 |
US8071172B2 (en) | 2011-12-06 |
MY139734A (en) | 2009-10-30 |
JP4988594B2 (ja) | 2012-08-01 |
US20090022892A1 (en) | 2009-01-22 |
WO2006070426A2 (en) | 2006-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4988594B2 (ja) | 低融点合金の堆積により少なくとも一つの活性物質を担持する装置を製造するための方法 | |
US7943844B2 (en) | Thermoelectric module and manufacturing method for same | |
CN101479405B (zh) | 无电解镀Ni-P的方法和电子部件用基板 | |
JP2014148758A (ja) | メタルマスクおよびメタルマスクの製造方法 | |
KR101946495B1 (ko) | 증기 및 가스 여과를 위한 방법 및 장치 | |
KR20150023236A (ko) | 시일 링 및 시일 링의 제조 방법 | |
EP0781186A1 (de) | Verfahren zur belotung von anschlussflächen, sowie verfahren zur herstellung einer lotlegierung | |
JP2004362908A (ja) | メタルマスク及びメタルマスクの製造方法 | |
US2661029A (en) | Method of making a fine wire mesh | |
JP7004191B2 (ja) | 気密封止用キャップおよび電子部品収納パッケージ | |
JPH11279800A (ja) | 小型電子部品のめっき方法 | |
RU2114404C1 (ru) | Способ изготовления термопар | |
CN111406127A (zh) | 框架一体型掩模的制造方法 | |
CN112368109B (zh) | 微孔管状焊丝 | |
JPH022132A (ja) | バンプ電極の製造方法 | |
CN110317969B (zh) | 焊料接合电极以及焊料接合电极的覆膜形成用铜合金靶 | |
JPS5864037A (ja) | 半導体装置の製造方法 | |
FR2863769A1 (fr) | Procede de fabrication d'un filament de cathode d'un tube a rayons x et tube a rayons x | |
JP2562744B2 (ja) | 半田付装置 | |
JP2004047941A (ja) | 半導体装置の製造方法及び半導体装置並びに半導体製造装置 | |
JPH076689A (ja) | 陰極構体の製造方法 | |
JPS6349332B2 (ja) | ||
JP2005291837A (ja) | ガスセンサ及びガスセンサの製造方法 | |
JPH04289155A (ja) | 金属線の溶融金属メッキ方法 | |
BE634414A (ja) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080930 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080930 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110617 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110628 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110915 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120327 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4988594 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150511 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |