JP2008525998A5 - - Google Patents

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JP2008525998A5
JP2008525998A5 JP2007546681A JP2007546681A JP2008525998A5 JP 2008525998 A5 JP2008525998 A5 JP 2008525998A5 JP 2007546681 A JP2007546681 A JP 2007546681A JP 2007546681 A JP2007546681 A JP 2007546681A JP 2008525998 A5 JP2008525998 A5 JP 2008525998A5
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layer
silicon
template
sacrificial
growth
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JP2008525998A (ja
JP5342143B2 (ja
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JP2007546681A 2004-12-16 2005-11-18 ひずみヘテロ接合構造体の製造 Expired - Lifetime JP5342143B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/014,574 2004-12-16
US11/014,574 US7229901B2 (en) 2004-12-16 2004-12-16 Fabrication of strained heterojunction structures
PCT/US2005/041889 WO2006065444A2 (en) 2004-12-16 2005-11-18 Fabrication of strained heterojunction structures

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JP2008525998A JP2008525998A (ja) 2008-07-17
JP2008525998A5 true JP2008525998A5 (enExample) 2009-01-15
JP5342143B2 JP5342143B2 (ja) 2013-11-13

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US (2) US7229901B2 (enExample)
EP (1) EP1834348A4 (enExample)
JP (1) JP5342143B2 (enExample)
WO (1) WO2006065444A2 (enExample)

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