JP2008520833A5 - - Google Patents
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- Publication number
- JP2008520833A5 JP2008520833A5 JP2007542994A JP2007542994A JP2008520833A5 JP 2008520833 A5 JP2008520833 A5 JP 2008520833A5 JP 2007542994 A JP2007542994 A JP 2007542994A JP 2007542994 A JP2007542994 A JP 2007542994A JP 2008520833 A5 JP2008520833 A5 JP 2008520833A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- dopant
- doped
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62959604P | 2004-11-19 | 2004-11-19 | |
| US60/629,596 | 2004-11-19 | ||
| PCT/SG2005/000393 WO2006054953A1 (en) | 2004-11-19 | 2005-11-18 | Doped metal oxide films and systems for fabricating the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008520833A JP2008520833A (ja) | 2008-06-19 |
| JP2008520833A5 true JP2008520833A5 (OSRAM) | 2009-01-29 |
| JP5064232B2 JP5064232B2 (ja) | 2012-10-31 |
Family
ID=36407418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007542994A Expired - Fee Related JP5064232B2 (ja) | 2004-11-19 | 2005-11-18 | ドープ酸化金属皮膜およびそれを作製するシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090298225A1 (OSRAM) |
| JP (1) | JP5064232B2 (OSRAM) |
| CN (1) | CN100573836C (OSRAM) |
| WO (1) | WO2006054953A1 (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258857B (zh) * | 2007-12-13 | 2016-05-11 | 出光兴产株式会社 | 使用了氧化物半导体的场效应晶体管及其制造方法 |
| GB2459917B (en) * | 2008-05-12 | 2013-02-27 | Sinito Shenzhen Optoelectrical Advanced Materials Company Ltd | A process for the manufacture of a high density ITO sputtering target |
| JP5507234B2 (ja) * | 2009-12-22 | 2014-05-28 | スタンレー電気株式会社 | ＺｎＯ系半導体装置及びその製造方法 |
| CN102312202B (zh) * | 2010-06-30 | 2015-08-19 | 中国科学院上海硅酸盐研究所 | 一种氧化锌基宽禁带陶瓷靶材及其制备方法 |
| CN102751318B (zh) * | 2012-07-18 | 2015-02-04 | 合肥工业大学 | 一种ZnO同质pn结及其制备方法 |
| CN103021782B (zh) * | 2012-12-11 | 2016-02-03 | 中国科学院微电子研究所 | 一种离子注入系统 |
| CN103871812B (zh) * | 2012-12-11 | 2016-09-28 | 中国科学院微电子研究所 | 一种离子注入设备 |
| DE102013109210A1 (de) * | 2013-08-20 | 2015-02-26 | Aixtron Se | Evakuierbare Kammer, insbesondere mit einem Spülgas spülbare Beladeschleuse |
| CN109390564B (zh) * | 2017-08-03 | 2020-08-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于锌离子掺杂的三元金属氧化物、其制备方法与应用 |
| JP6814116B2 (ja) * | 2017-09-13 | 2021-01-13 | キオクシア株式会社 | 半導体装置の製造方法および半導体製造装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003089875A (ja) * | 2001-09-14 | 2003-03-28 | Okura Ind Co Ltd | 酸化亜鉛薄膜の形成方法 |
| JP2004143525A (ja) * | 2002-10-24 | 2004-05-20 | Konica Minolta Holdings Inc | 薄膜形成方法、薄膜、透明導電膜及び大気圧プラズマ処理装置 |
| JP2003282886A (ja) * | 2003-04-11 | 2003-10-03 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
| CN1453840A (zh) * | 2003-05-16 | 2003-11-05 | 山东大学 | 一种p型氧化锌薄膜的制备方法 |
| US7141489B2 (en) * | 2003-05-20 | 2006-11-28 | Burgener Ii Robert H | Fabrication of p-type group II-VI semiconductors |
| US8728285B2 (en) * | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
| US7235160B2 (en) * | 2003-08-06 | 2007-06-26 | Energy Photovoltaics, Inc. | Hollow cathode sputtering apparatus and related method |
| CN1529365A (zh) * | 2003-10-14 | 2004-09-15 | 浙江大学 | 一种ZnO基发光二极管及其制备方法 |
-
2005
- 2005-11-18 US US11/719,741 patent/US20090298225A1/en not_active Abandoned
- 2005-11-18 WO PCT/SG2005/000393 patent/WO2006054953A1/en not_active Ceased
- 2005-11-18 JP JP2007542994A patent/JP5064232B2/ja not_active Expired - Fee Related
- 2005-11-18 CN CNB2005800453570A patent/CN100573836C/zh not_active Expired - Fee Related
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