JP5064232B2 - ドープ酸化金属皮膜およびそれを作製するシステム - Google Patents

ドープ酸化金属皮膜およびそれを作製するシステム Download PDF

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JP5064232B2
JP5064232B2 JP2007542994A JP2007542994A JP5064232B2 JP 5064232 B2 JP5064232 B2 JP 5064232B2 JP 2007542994 A JP2007542994 A JP 2007542994A JP 2007542994 A JP2007542994 A JP 2007542994A JP 5064232 B2 JP5064232 B2 JP 5064232B2
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plasma
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JP2008520833A5 (OSRAM
JP2008520833A (ja
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ウー，ピン
ゴン，ハオ
ゲン ユー，ツィー
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Agency for Science Technology and Research Singapore
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2007542994A 2004-11-19 2005-11-18 ドープ酸化金属皮膜およびそれを作製するシステム Expired - Fee Related JP5064232B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62959604P 2004-11-19 2004-11-19
US60/629,596 2004-11-19
PCT/SG2005/000393 WO2006054953A1 (en) 2004-11-19 2005-11-18 Doped metal oxide films and systems for fabricating the same

Publications (3)

Publication Number Publication Date
JP2008520833A JP2008520833A (ja) 2008-06-19
JP2008520833A5 JP2008520833A5 (OSRAM) 2009-01-29
JP5064232B2 true JP5064232B2 (ja) 2012-10-31

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ID=36407418

Family Applications (1)

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JP2007542994A Expired - Fee Related JP5064232B2 (ja) 2004-11-19 2005-11-18 ドープ酸化金属皮膜およびそれを作製するシステム

Country Status (4)

Country Link
US (1) US20090298225A1 (OSRAM)
JP (1) JP5064232B2 (OSRAM)
CN (1) CN100573836C (OSRAM)
WO (1) WO2006054953A1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009075281A1 (ja) * 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
GB2459917B (en) * 2008-05-12 2013-02-27 Sinito Shenzhen Optoelectrical Advanced Materials Company Ltd A process for the manufacture of a high density ITO sputtering target
JP5507234B2 (ja) * 2009-12-22 2014-05-28 スタンレー電気株式会社 ＺｎＯ系半導体装置及びその製造方法
CN102312202B (zh) * 2010-06-30 2015-08-19 中国科学院上海硅酸盐研究所 一种氧化锌基宽禁带陶瓷靶材及其制备方法
CN102751318B (zh) * 2012-07-18 2015-02-04 合肥工业大学 一种ZnO同质pn结及其制备方法
CN103021782B (zh) * 2012-12-11 2016-02-03 中国科学院微电子研究所 一种离子注入系统
CN103871812B (zh) * 2012-12-11 2016-09-28 中国科学院微电子研究所 一种离子注入设备
DE102013109210A1 (de) * 2013-08-20 2015-02-26 Aixtron Se Evakuierbare Kammer, insbesondere mit einem Spülgas spülbare Beladeschleuse
CN109390564B (zh) * 2017-08-03 2020-08-28 中国科学院苏州纳米技术与纳米仿生研究所 基于锌离子掺杂的三元金属氧化物、其制备方法与应用
JP6814116B2 (ja) * 2017-09-13 2021-01-13 キオクシア株式会社 半導体装置の製造方法および半導体製造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003089875A (ja) * 2001-09-14 2003-03-28 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
JP2004143525A (ja) * 2002-10-24 2004-05-20 Konica Minolta Holdings Inc 薄膜形成方法、薄膜、透明導電膜及び大気圧プラズマ処理装置
JP2003282886A (ja) * 2003-04-11 2003-10-03 Semiconductor Energy Lab Co Ltd 電子装置およびその作製方法
CN1453840A (zh) * 2003-05-16 2003-11-05 山东大学 一种p型氧化锌薄膜的制备方法
US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
US8728285B2 (en) * 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7235160B2 (en) * 2003-08-06 2007-06-26 Energy Photovoltaics, Inc. Hollow cathode sputtering apparatus and related method
CN1529365A (zh) * 2003-10-14 2004-09-15 浙江大学 一种ZnO基发光二极管及其制备方法

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Publication number Publication date
CN101142663A (zh) 2008-03-12
CN100573836C (zh) 2009-12-23
JP2008520833A (ja) 2008-06-19
WO2006054953A1 (en) 2006-05-26
US20090298225A1 (en) 2009-12-03

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