JP2008518463A5 - - Google Patents

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Publication number
JP2008518463A5
JP2008518463A5 JP2007538921A JP2007538921A JP2008518463A5 JP 2008518463 A5 JP2008518463 A5 JP 2008518463A5 JP 2007538921 A JP2007538921 A JP 2007538921A JP 2007538921 A JP2007538921 A JP 2007538921A JP 2008518463 A5 JP2008518463 A5 JP 2008518463A5
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Japan
Prior art keywords
conditioning
etching
plasma
gas
flow rate
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JP2007538921A
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JP2008518463A (ja
JP5086090B2 (ja
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Priority claimed from US10/975,209 external-priority patent/US7053003B2/en
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JP2007538921A 2004-10-27 2005-09-23 水素流量傾斜化によるフォトレジストプラズマコンディショニング工程を含むエッチング方法及び装置 Expired - Fee Related JP5086090B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/975,209 2004-10-27
US10/975,209 US7053003B2 (en) 2004-10-27 2004-10-27 Photoresist conditioning with hydrogen ramping
PCT/US2005/034172 WO2006049736A1 (en) 2004-10-27 2005-09-23 Etching method including photoresist plasma conditioning step with hydrogen flow rate ramping

Publications (3)

Publication Number Publication Date
JP2008518463A JP2008518463A (ja) 2008-05-29
JP2008518463A5 true JP2008518463A5 (enExample) 2009-05-21
JP5086090B2 JP5086090B2 (ja) 2012-11-28

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JP2007538921A Expired - Fee Related JP5086090B2 (ja) 2004-10-27 2005-09-23 水素流量傾斜化によるフォトレジストプラズマコンディショニング工程を含むエッチング方法及び装置

Country Status (6)

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US (2) US7053003B2 (enExample)
JP (1) JP5086090B2 (enExample)
KR (1) KR101335137B1 (enExample)
CN (1) CN101061436B (enExample)
TW (1) TWI423322B (enExample)
WO (1) WO2006049736A1 (enExample)

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