JP2008515198A5 - - Google Patents

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Publication number
JP2008515198A5
JP2008515198A5 JP2007533669A JP2007533669A JP2008515198A5 JP 2008515198 A5 JP2008515198 A5 JP 2008515198A5 JP 2007533669 A JP2007533669 A JP 2007533669A JP 2007533669 A JP2007533669 A JP 2007533669A JP 2008515198 A5 JP2008515198 A5 JP 2008515198A5
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JP
Japan
Prior art keywords
substrate
plasma
bias voltage
self
plasma processing
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JP2007533669A
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English (en)
Japanese (ja)
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JP5057980B2 (ja
JP2008515198A (ja
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Priority claimed from US10/951,553 external-priority patent/US7323116B2/en
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Publication of JP2008515198A5 publication Critical patent/JP2008515198A5/ja
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Publication of JP5057980B2 publication Critical patent/JP5057980B2/ja
Anticipated expiration legal-status Critical
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JP2007533669A 2004-09-27 2005-09-23 プラズマ加工システムで基板の属性を現場でモニターするためのモニター方法 Expired - Lifetime JP5057980B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/951,553 2004-09-27
US10/951,553 US7323116B2 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
PCT/US2005/034227 WO2006036821A2 (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Publications (3)

Publication Number Publication Date
JP2008515198A JP2008515198A (ja) 2008-05-08
JP2008515198A5 true JP2008515198A5 (https=) 2008-11-13
JP5057980B2 JP5057980B2 (ja) 2012-10-24

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Family Applications (1)

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JP2007533669A Expired - Lifetime JP5057980B2 (ja) 2004-09-27 2005-09-23 プラズマ加工システムで基板の属性を現場でモニターするためのモニター方法

Country Status (6)

Country Link
US (1) US7323116B2 (https=)
JP (1) JP5057980B2 (https=)
KR (1) KR101164828B1 (https=)
CN (1) CN101088147B (https=)
TW (1) TWI398626B (https=)
WO (1) WO2006036821A2 (https=)

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US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
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