CN101088147B - 测量自偏压来监控等离子体处理系统中处理的方法和装置 - Google Patents

测量自偏压来监控等离子体处理系统中处理的方法和装置 Download PDF

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Publication number
CN101088147B
CN101088147B CN2005800397621A CN200580039762A CN101088147B CN 101088147 B CN101088147 B CN 101088147B CN 2005800397621 A CN2005800397621 A CN 2005800397621A CN 200580039762 A CN200580039762 A CN 200580039762A CN 101088147 B CN101088147 B CN 101088147B
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China
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plasma processing
self
plasma
bias voltage
processing system
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CN101088147A (zh
Inventor
蒂莫西·J·吉尼
拉奥·安纳普拉加达
苏布哈什·德希穆克
程家成
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2005800397621A 2004-09-27 2005-09-23 测量自偏压来监控等离子体处理系统中处理的方法和装置 Expired - Lifetime CN101088147B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/951,553 2004-09-27
US10/951,553 US7323116B2 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
PCT/US2005/034227 WO2006036821A2 (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Publications (2)

Publication Number Publication Date
CN101088147A CN101088147A (zh) 2007-12-12
CN101088147B true CN101088147B (zh) 2011-12-28

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CN2005800397621A Expired - Lifetime CN101088147B (zh) 2004-09-27 2005-09-23 测量自偏压来监控等离子体处理系统中处理的方法和装置

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US (1) US7323116B2 (https=)
JP (1) JP5057980B2 (https=)
KR (1) KR101164828B1 (https=)
CN (1) CN101088147B (https=)
TW (1) TWI398626B (https=)
WO (1) WO2006036821A2 (https=)

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US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
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US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
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Also Published As

Publication number Publication date
KR101164828B1 (ko) 2012-07-11
JP5057980B2 (ja) 2012-10-24
CN101088147A (zh) 2007-12-12
US7323116B2 (en) 2008-01-29
WO2006036821A3 (en) 2007-02-01
US20060065623A1 (en) 2006-03-30
JP2008515198A (ja) 2008-05-08
KR20070083803A (ko) 2007-08-24
TWI398626B (zh) 2013-06-11
WO2006036821A2 (en) 2006-04-06
TW200622214A (en) 2006-07-01

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