KR101164828B1 - 자기 바이어스 전압을 측정하여 플라즈마 프로세싱 시스템에서의 프로세스를 모니터링하는 방법 및 장치 - Google Patents

자기 바이어스 전압을 측정하여 플라즈마 프로세싱 시스템에서의 프로세스를 모니터링하는 방법 및 장치 Download PDF

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KR101164828B1
KR101164828B1 KR1020077009422A KR20077009422A KR101164828B1 KR 101164828 B1 KR101164828 B1 KR 101164828B1 KR 1020077009422 A KR1020077009422 A KR 1020077009422A KR 20077009422 A KR20077009422 A KR 20077009422A KR 101164828 B1 KR101164828 B1 KR 101164828B1
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substrate
plasma
bias voltage
plasma processing
self bias
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KR20070083803A (ko
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티모시 제이 기니
라오 아나프라가다
수바시 데시무크
치아 청 청
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020077009422A 2004-09-27 2005-09-23 자기 바이어스 전압을 측정하여 플라즈마 프로세싱 시스템에서의 프로세스를 모니터링하는 방법 및 장치 Expired - Fee Related KR101164828B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/951,553 2004-09-27
US10/951,553 US7323116B2 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
PCT/US2005/034227 WO2006036821A2 (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Publications (2)

Publication Number Publication Date
KR20070083803A KR20070083803A (ko) 2007-08-24
KR101164828B1 true KR101164828B1 (ko) 2012-07-11

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KR1020077009422A Expired - Fee Related KR101164828B1 (ko) 2004-09-27 2005-09-23 자기 바이어스 전압을 측정하여 플라즈마 프로세싱 시스템에서의 프로세스를 모니터링하는 방법 및 장치

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US (1) US7323116B2 (https=)
JP (1) JP5057980B2 (https=)
KR (1) KR101164828B1 (https=)
CN (1) CN101088147B (https=)
TW (1) TWI398626B (https=)
WO (1) WO2006036821A2 (https=)

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US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
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Also Published As

Publication number Publication date
JP5057980B2 (ja) 2012-10-24
CN101088147A (zh) 2007-12-12
US7323116B2 (en) 2008-01-29
WO2006036821A3 (en) 2007-02-01
US20060065623A1 (en) 2006-03-30
JP2008515198A (ja) 2008-05-08
KR20070083803A (ko) 2007-08-24
CN101088147B (zh) 2011-12-28
TWI398626B (zh) 2013-06-11
WO2006036821A2 (en) 2006-04-06
TW200622214A (en) 2006-07-01

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