JP5057980B2 - プラズマ加工システムで基板の属性を現場でモニターするためのモニター方法 - Google Patents
プラズマ加工システムで基板の属性を現場でモニターするためのモニター方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
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Description
Xは特定評価値であり、μは平均値であり、Nは評価値数である。
供給電力は一般的に次の様に計算できる。
インピーダンス、複素数、は一般的に次の様に計算できる。
V0が基部での電圧(ピーク電圧)である場合、I0は基部での電流(ピーク電流)であり、Rは実抵抗であり、j=sqrt(−1)(複素数の虚数部)であり、Xはコンプレックスリアクタンスである。コンプレックスリアクタンスは、電流及び電圧がωで表わされる角周波数を有した発生信号のそれぞれのACサイクルと共に変動するとき、電子部品がエネルギーを保存及び放出する程度のことである。
プラズマインピーダンスの位相角は次の式で表わすことができる。
R=Zcos(θ)でX=Zsin(θ)である。
電力(2MHz):1000.0ワット
電力(27MHz):2000.0ワット
混合ガス:5 SCCM CH2F2,6 SCCM C4F8,180 SCCM N2及び200 SCCM AR
温度: TP(上部)で80℃及びESCで20℃
加工時間: 60秒間
CW:37
プロット202は数週間に渡ったブランケット酸化物のエッチング速度をナノメータ毎分(nm/分)で表している。この図を分析すると2つのエクスカーションポイントが明らかとなる:2004年4月6日実施の204と2004年4月9日実施の206である。前述のごとくエクスカーションは設定統計範囲または値範囲を外れているデータポイントを表し、数々の要素(すなわち、チャンバ汚染、プラズマ構造ダメージ及び劣化、ガス圧漏出、ガス流混合問題、仕様を外れたチャンバ温度、劣悪RFケーブル、不適当に接続されたケーブル、裏側Heフロー等々)によって発生する。
2004年4月6日に示すように、エッチングプロット202とプロットHeフロー208は共に204でエクスカーションを示している。すなわち、Heフローは約33.5SCCMへ減少し、エッチング速度も実質的に約33.4nm/分へ減少し、実質的に100.91nm/分である3σ制御下限を外れている。
Claims (9)
- プラズマ加工チャンバを有したプラズマ加工システムで基板の属性を現場でモニターするためのモニター方法であって、
前記プラズマ加工チャンバ内に基板を配置するステップと、
前記基板が前記プラズマ加工チャンバ内に配置されているときに該プラズマ加工チャンバ内でプラズマを放射するステップと、
一連のプラズマパラメータの値を測定するステップであって、前記プラズマパラメータが、特定周波数のRF電源のインピーダンス、周波数調整されたプラズマシステムのRF周波数、特定周波数のRF電源の位相角、の中のいずれかであるステップと、を備えており、
一連の前記プラズマパラメータの値が設定されている統計的範囲を外れていれば、前記基板の前記属性のエクスカーションの特定の種類が発生したと推定し、一連の前記プラズマパラメータの値が設定されている統計的範囲を外れている場合に前記基板の前記属性のエクスカーションの特定の種類の推定に役立つデータを発生させるために、前記基板の前記属性は、基板の工程の履歴データを用いて前記プラズマパラメータと予め関連づけられていることを特徴としており、
且つ前記基板の前記属性が、エッチング速度、選択度、エッチング均一性の測定値の中のいずれか一つであることを特徴とする方法。 - プラズマ加工システムはV/Iプローブを含んでおり、前記一連のプラズマパラメータの値は前記V/Iプローブを利用して測定されることを特徴とする請求項1記載の方法。
- 測定された前記一連のプラズマパラメータの値は、前記特定周波数の前記RF電源の位相角であることを特徴とする請求項1記載の方法。
- 測定された前記一連のプラズマパラメータの値は、前記特定周波数の前記RF電源のインピーダンスであることを特徴とする請求項1記載の方法。
- 測定された前記一連のプラズマパラメータの値は、前記周波数調整されたプラズマシステムのRF周波数であることを特徴とする請求項1記載の方法。
- 前記基板属性は、基板エッチング中の前記エッチング速度であることを特徴とする請求項1記載の方法。
- 前記基板属性は、基板エッチング中の前記選択度であることを特徴とする請求項1記載の方法。
- 前記基板属性は、基板エッチング中の前記エッチング均一性の測定値であることを特徴とする請求項1記載の方法。
- 前記プラズマ加工システムは、周波数調整結合プラズマ加工システムであることを特徴とする請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/951,553 | 2004-09-27 | ||
US10/951,553 US7323116B2 (en) | 2004-09-27 | 2004-09-27 | Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage |
PCT/US2005/034227 WO2006036821A2 (en) | 2004-09-27 | 2005-09-23 | Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage |
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JP2008515198A JP2008515198A (ja) | 2008-05-08 |
JP2008515198A5 JP2008515198A5 (ja) | 2008-11-13 |
JP5057980B2 true JP5057980B2 (ja) | 2012-10-24 |
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US (1) | US7323116B2 (ja) |
JP (1) | JP5057980B2 (ja) |
KR (1) | KR101164828B1 (ja) |
CN (1) | CN101088147B (ja) |
TW (1) | TWI398626B (ja) |
WO (1) | WO2006036821A2 (ja) |
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JP2000173924A (ja) * | 1998-12-01 | 2000-06-23 | Hitachi Ltd | プラズマ処理方法及び装置 |
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JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
US20060065631A1 (en) * | 2004-09-27 | 2006-03-30 | Chia-Cheng Cheng | Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance |
US20060065632A1 (en) * | 2004-09-27 | 2006-03-30 | Chia-Cheng Cheng | Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency |
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WO2006036821A2 (en) | 2006-04-06 |
TWI398626B (zh) | 2013-06-11 |
CN101088147A (zh) | 2007-12-12 |
CN101088147B (zh) | 2011-12-28 |
US7323116B2 (en) | 2008-01-29 |
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