TWI398626B - 藉測量自偏壓電壓監控電漿處理系統中程序之方法及裝置 - Google Patents

藉測量自偏壓電壓監控電漿處理系統中程序之方法及裝置 Download PDF

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Publication number
TWI398626B
TWI398626B TW094133150A TW94133150A TWI398626B TW I398626 B TWI398626 B TW I398626B TW 094133150 A TW094133150 A TW 094133150A TW 94133150 A TW94133150 A TW 94133150A TW I398626 B TWI398626 B TW I398626B
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Taiwan
Prior art keywords
bias voltage
self
plasma processing
processing system
plasma
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TW094133150A
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English (en)
Chinese (zh)
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TW200622214A (en
Inventor
吉尼 提莫希
陳家成
安那普拉葛達 羅
德許穆克 薩哈遜
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泛林股份有限公司
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Publication of TW200622214A publication Critical patent/TW200622214A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW094133150A 2004-09-27 2005-09-23 藉測量自偏壓電壓監控電漿處理系統中程序之方法及裝置 TWI398626B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/951,553 US7323116B2 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Publications (2)

Publication Number Publication Date
TW200622214A TW200622214A (en) 2006-07-01
TWI398626B true TWI398626B (zh) 2013-06-11

Family

ID=36097829

Family Applications (1)

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TW094133150A TWI398626B (zh) 2004-09-27 2005-09-23 藉測量自偏壓電壓監控電漿處理系統中程序之方法及裝置

Country Status (6)

Country Link
US (1) US7323116B2 (https=)
JP (1) JP5057980B2 (https=)
KR (1) KR101164828B1 (https=)
CN (1) CN101088147B (https=)
TW (1) TWI398626B (https=)
WO (1) WO2006036821A2 (https=)

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Also Published As

Publication number Publication date
KR101164828B1 (ko) 2012-07-11
JP5057980B2 (ja) 2012-10-24
CN101088147A (zh) 2007-12-12
US7323116B2 (en) 2008-01-29
WO2006036821A3 (en) 2007-02-01
US20060065623A1 (en) 2006-03-30
JP2008515198A (ja) 2008-05-08
KR20070083803A (ko) 2007-08-24
CN101088147B (zh) 2011-12-28
WO2006036821A2 (en) 2006-04-06
TW200622214A (en) 2006-07-01

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