JP2008510320A5 - - Google Patents

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Publication number
JP2008510320A5
JP2008510320A5 JP2007527945A JP2007527945A JP2008510320A5 JP 2008510320 A5 JP2008510320 A5 JP 2008510320A5 JP 2007527945 A JP2007527945 A JP 2007527945A JP 2007527945 A JP2007527945 A JP 2007527945A JP 2008510320 A5 JP2008510320 A5 JP 2008510320A5
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JP
Japan
Prior art keywords
semiconductor layer
concentration
components
component
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007527945A
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English (en)
Japanese (ja)
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JP2008510320A (ja
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Publication date
Priority claimed from US10/919,952 external-priority patent/US7241647B2/en
Application filed filed Critical
Publication of JP2008510320A publication Critical patent/JP2008510320A/ja
Publication of JP2008510320A5 publication Critical patent/JP2008510320A5/ja
Pending legal-status Critical Current

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JP2007527945A 2004-08-17 2005-08-08 勾配半導体層 Pending JP2008510320A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/919,952 US7241647B2 (en) 2004-08-17 2004-08-17 Graded semiconductor layer
PCT/US2005/029113 WO2006023492A1 (en) 2004-08-17 2005-08-08 Graded semiconductor layer

Publications (2)

Publication Number Publication Date
JP2008510320A JP2008510320A (ja) 2008-04-03
JP2008510320A5 true JP2008510320A5 (enExample) 2008-09-25

Family

ID=35910124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007527945A Pending JP2008510320A (ja) 2004-08-17 2005-08-08 勾配半導体層

Country Status (6)

Country Link
US (1) US7241647B2 (enExample)
JP (1) JP2008510320A (enExample)
KR (1) KR20070047307A (enExample)
CN (1) CN100472761C (enExample)
TW (1) TWI371087B (enExample)
WO (1) WO2006023492A1 (enExample)

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US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
CN102903635B (zh) * 2011-07-25 2015-05-06 中芯国际集成电路制造(上海)有限公司 Mos晶体管的制造方法
CN102903636B (zh) * 2011-07-25 2015-05-06 中芯国际集成电路制造(上海)有限公司 Mos晶体管的制造方法
US20140057399A1 (en) * 2012-08-24 2014-02-27 International Business Machines Corporation Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
CN105679645A (zh) * 2014-11-17 2016-06-15 上海华力微电子有限公司 嵌入式锗硅外延位错缺陷的改善方法

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