JP2008507854A - 磁気トンネル接合素子構造と磁気トンネル接合素子構造の製造方法 - Google Patents

磁気トンネル接合素子構造と磁気トンネル接合素子構造の製造方法 Download PDF

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Publication number
JP2008507854A
JP2008507854A JP2007523558A JP2007523558A JP2008507854A JP 2008507854 A JP2008507854 A JP 2008507854A JP 2007523558 A JP2007523558 A JP 2007523558A JP 2007523558 A JP2007523558 A JP 2007523558A JP 2008507854 A JP2008507854 A JP 2008507854A
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layer
ferromagnetic layer
magnetic tunnel
tunnel junction
pinned
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Japanese (ja)
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JP2008507854A5 (enExample
Inventor
サン、ジジュン
ダブリュ． デイブ、レニュ
エム． スローター、ジョン
アッカーマン、ジョアン
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NXP USA Inc
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NXP USA Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/13—Amorphous metallic alloys, e.g. glassy metals
    • H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP2007523558A 2004-07-26 2005-06-16 磁気トンネル接合素子構造と磁気トンネル接合素子構造の製造方法 Pending JP2008507854A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/899,610 US7098495B2 (en) 2004-07-26 2004-07-26 Magnetic tunnel junction element structures and methods for fabricating the same
PCT/US2005/021311 WO2006023018A2 (en) 2004-07-26 2005-06-16 Magnetic tunnel junction element structures and methods for fabricating the same

Publications (2)

Publication Number Publication Date
JP2008507854A true JP2008507854A (ja) 2008-03-13
JP2008507854A5 JP2008507854A5 (enExample) 2008-08-28

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JP2007523558A Pending JP2008507854A (ja) 2004-07-26 2005-06-16 磁気トンネル接合素子構造と磁気トンネル接合素子構造の製造方法

Country Status (6)

Country Link
US (1) US7098495B2 (enExample)
JP (1) JP2008507854A (enExample)
KR (1) KR101149393B1 (enExample)
CN (1) CN100533763C (enExample)
TW (1) TWI417878B (enExample)
WO (1) WO2006023018A2 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194327A (ja) * 2006-01-18 2007-08-02 Alps Electric Co Ltd トンネル型磁気検出素子
JP2008135432A (ja) * 2006-11-27 2008-06-12 Tdk Corp トンネル磁気抵抗効果素子及びその製造方法
JP2008227499A (ja) * 2007-03-08 2008-09-25 Magic Technologies Inc 磁気トンネル接合素子およびその形成方法、磁気ランダムアクセスメモリ
WO2010026802A1 (en) * 2008-09-03 2010-03-11 Canon Anelva Corporation FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORPHOUS OR MICROCRYSTALLINE MgO TUNNEL BARRIER
JP2011123923A (ja) * 2009-12-08 2011-06-23 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果ヘッド、磁気記録再生装置
JP2012502447A (ja) * 2008-09-03 2012-01-26 キヤノンアネルバ株式会社 非晶質または微結晶質ＭｇＯトンネル障壁に用いる優先グレイン成長強磁性シード層
JP2016046492A (ja) * 2014-08-26 2016-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20160084317A (ko) * 2015-01-05 2016-07-13 삼성전자주식회사 스핀 전달 토크 자기 램의 응용 분야에서 사용될 수 있는 수직 자기 접합에 하부 기준층을 제공하는 방법 및 시스템
WO2017052635A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Psttm device with bottom electrode interface material
US10326075B2 (en) 2015-09-25 2019-06-18 Intel Corporation PSTTM device with multi-layered filter stack
US10580970B2 (en) 2015-09-25 2020-03-03 Intel Corporation PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI283477B (en) * 2004-11-16 2007-07-01 Ind Tech Res Inst Magnetic random access memory with lower switching field
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US8363457B2 (en) * 2006-02-25 2013-01-29 Avalanche Technology, Inc. Magnetic memory sensing circuit
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
US8497538B2 (en) * 2006-05-31 2013-07-30 Everspin Technologies, Inc. MRAM synthetic antiferromagnet structure
US7782577B2 (en) * 2006-06-06 2010-08-24 Infineon Technologies Ag MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
TWI395335B (zh) * 2006-06-30 2013-05-01 Applied Materials Inc 奈米結晶的形成
JP5210533B2 (ja) * 2006-09-21 2013-06-12 アルプス電気株式会社 トンネル型磁気検出素子及びその製造方法
JP2008103662A (ja) * 2006-09-21 2008-05-01 Alps Electric Co Ltd トンネル型磁気検出素子及びその製造方法
TWI307507B (en) * 2006-10-20 2009-03-11 Ind Tech Res Inst Magnetic tunnel junction devices and magnetic random access memory
US20080112214A1 (en) * 2006-10-30 2008-05-15 Young Sir Chung Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the same
JP5061595B2 (ja) * 2006-11-24 2012-10-31 Ｔｄｋ株式会社 トンネル型磁気検出素子の製造方法
US7598579B2 (en) * 2007-01-30 2009-10-06 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US7869266B2 (en) * 2007-10-31 2011-01-11 Avalanche Technology, Inc. Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
US20080205130A1 (en) * 2007-02-28 2008-08-28 Freescale Semiconductor, Inc. Mram free layer synthetic antiferromagnet structure and methods
US7888756B2 (en) * 2007-03-22 2011-02-15 Everspin Technologies, Inc. MRAM tunnel barrier structure and methods
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
CN101562213B (zh) * 2008-04-16 2010-08-11 中国科学院半导体研究所 光学自旋注入方法
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7855911B2 (en) 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7852663B2 (en) 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
CN101621036B (zh) * 2008-07-02 2011-08-17 中芯国际集成电路制造(上海)有限公司 具有非晶硅mas存储单元结构的半导体器件及其制造方法
JP4845937B2 (ja) * 2008-07-24 2011-12-28 株式会社東芝 スピンｍｏｓｆｅｔおよびこのスピンｍｏｓｆｅｔを用いたリコンフィギュラブル論理回路
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US9929211B2 (en) * 2008-09-24 2018-03-27 Qualcomm Incorporated Reducing spin pumping induced damping of a free layer of a memory device
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8089132B2 (en) 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US20100148167A1 (en) * 2008-12-12 2010-06-17 Everspin Technologies, Inc. Magnetic tunnel junction stack
KR101584747B1 (ko) * 2009-01-20 2016-01-13 삼성전자주식회사 자기 메모리 소자
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US8450818B2 (en) * 2009-06-18 2013-05-28 Dmitri E. Nikonov Methods of forming spin torque devices and structures formed thereby
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US8063460B2 (en) * 2009-12-18 2011-11-22 Intel Corporation Spin torque magnetic integrated circuits and devices therefor
KR101676821B1 (ko) * 2010-03-18 2016-11-17 삼성전자주식회사 자기 메모리 소자 및 그 형성방법
US20110236723A1 (en) * 2010-03-26 2011-09-29 Tsann Lin CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS
KR101766899B1 (ko) 2010-04-21 2017-08-10 삼성전자주식회사 자기 메모리 소자
US8920947B2 (en) * 2010-05-28 2014-12-30 Headway Technologies, Inc. Multilayer structure with high perpendicular anisotropy for device applications
KR101652006B1 (ko) 2010-07-20 2016-08-30 삼성전자주식회사 자기 기억 소자 및 그 제조 방법
US8907436B2 (en) * 2010-08-24 2014-12-09 Samsung Electronics Co., Ltd. Magnetic devices having perpendicular magnetic tunnel junction
US8508221B2 (en) * 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
US9019758B2 (en) 2010-09-14 2015-04-28 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
US8345471B2 (en) * 2010-10-07 2013-01-01 Hynix Semiconductor Inc. Magneto-resistance element and semiconductor memory device including the same
US9028910B2 (en) 2010-12-10 2015-05-12 Avalanche Technology, Inc. MTJ manufacturing method utilizing in-situ annealing and etch back
US8758850B2 (en) * 2010-12-10 2014-06-24 Avalanche Technology, Inc. STT-MRAM MTJ manufacturing method with in-situ annealing
US8796794B2 (en) 2010-12-17 2014-08-05 Intel Corporation Write current reduction in spin transfer torque memory devices
US8686484B2 (en) 2011-06-10 2014-04-01 Everspin Technologies, Inc. Spin-torque magnetoresistive memory element and method of fabricating same
US8817426B2 (en) 2011-10-17 2014-08-26 HGST Netherlands B.V. Magnetic sensor having CoFeBTa in pinned and free layer structures
CN107275479B (zh) * 2011-12-30 2020-10-16 英特尔公司 平衡垂直磁隧道结中的状态之间的能垒
US9053071B2 (en) * 2012-03-15 2015-06-09 Qualcomm, Incorporated Spin torque transfer magnetic tunnel junction intelligent sensing
US8988109B2 (en) * 2012-11-16 2015-03-24 Intel Corporation High speed precessionally switched magnetic logic
CN103323796B (zh) * 2013-06-21 2015-07-29 中国人民解放军国防科学技术大学 一种以石墨烯作为势垒层的mtj磁场传感器
KR102082328B1 (ko) 2013-07-03 2020-02-27 삼성전자주식회사 수직 자기터널접합을 구비하는 자기 기억 소자
US9240547B2 (en) 2013-09-10 2016-01-19 Micron Technology, Inc. Magnetic tunnel junctions and methods of forming magnetic tunnel junctions
US20170002456A1 (en) * 2013-12-27 2017-01-05 Drexel University Grain Size Tuning for Radiation Resistance
CN103794717B (zh) * 2014-02-28 2017-06-16 北京航空航天大学 一种包含介电层的嵌入型磁隧道结器件的制造方法
US10158065B2 (en) 2014-07-07 2018-12-18 Intel Corporation Spin-transfer torque memory (STTM) devices having magnetic contacts
US9412399B2 (en) * 2014-09-17 2016-08-09 HGST Netherlands B.V. Underlayer for reference layer of polycrystalline CPP GMR sensor stack
CN106575519B (zh) * 2014-09-26 2021-12-07 英特尔公司 用于在垂直sttm叠置体中改善稳定性的非晶籽晶层
CN106605267B (zh) * 2014-09-26 2021-06-08 英特尔公司 制造用于psttm应用的晶体磁性膜的方法
US9502642B2 (en) 2015-04-10 2016-11-22 Micron Technology, Inc. Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
US9520553B2 (en) 2015-04-15 2016-12-13 Micron Technology, Inc. Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction
US9530959B2 (en) * 2015-04-15 2016-12-27 Micron Technology, Inc. Magnetic tunnel junctions
US9257136B1 (en) * 2015-05-05 2016-02-09 Micron Technology, Inc. Magnetic tunnel junctions
US9960346B2 (en) 2015-05-07 2018-05-01 Micron Technology, Inc. Magnetic tunnel junctions
CN107667406B (zh) * 2015-06-24 2020-12-08 英特尔公司 具有从匹配自旋转移层的高自旋注入效率的自旋逻辑装置
KR102451098B1 (ko) * 2015-09-23 2022-10-05 삼성전자주식회사 자기 메모리 장치 및 이의 제조 방법
US10141498B2 (en) 2015-12-10 2018-11-27 Everspin Technologies, Inc. Magnetoresistive stack, seed region thereof and method of manufacturing same
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
US9680089B1 (en) 2016-05-13 2017-06-13 Micron Technology, Inc. Magnetic tunnel junctions
WO2019005083A1 (en) * 2017-06-29 2019-01-03 Intel Corporation MAGNETIC TUNNEL JUNCTION DEVICE HAVING A CARBON-DOPED FILTER LAYER
US10283246B1 (en) 2017-10-20 2019-05-07 Globalfoundries Singapore Pte. Ltd. MTJ structures, STT MRAM structures, and methods for fabricating integrated circuits including the same
US12137616B2 (en) * 2017-11-17 2024-11-05 Everspin Technologies, Inc. Magnetoresistive stack/structure and methods therefor
WO2019143052A1 (ko) * 2018-01-17 2019-07-25 한양대학교 산학협력단 메모리 소자
US10944050B2 (en) * 2018-05-08 2021-03-09 Applied Materials, Inc. Magnetic tunnel junction structures and methods of manufacture thereof
US10957849B2 (en) 2018-05-24 2021-03-23 Applied Materials, Inc. Magnetic tunnel junctions with coupling-pinning layer lattice matching
US11502188B2 (en) 2018-06-14 2022-11-15 Intel Corporation Apparatus and method for boosting signal in magnetoelectric spin orbit logic
US11476412B2 (en) 2018-06-19 2022-10-18 Intel Corporation Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
US11444237B2 (en) 2018-06-29 2022-09-13 Intel Corporation Spin orbit torque (SOT) memory devices and methods of fabrication
US11616192B2 (en) 2018-06-29 2023-03-28 Intel Corporation Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
US11770979B2 (en) 2018-06-29 2023-09-26 Intel Corporation Conductive alloy layer in magnetic memory devices and methods of fabrication
JP2020043224A (ja) 2018-09-11 2020-03-19 キオクシア株式会社 磁気装置
CN113016033B (zh) * 2018-11-20 2024-06-25 华为技术有限公司 磁隧道结、磁电阻随机存储器、芯片及制备方法
US11594673B2 (en) 2019-03-27 2023-02-28 Intel Corporation Two terminal spin orbit memory devices and methods of fabrication
US11557629B2 (en) 2019-03-27 2023-01-17 Intel Corporation Spin orbit memory devices with reduced magnetic moment and methods of fabrication
KR102677779B1 (ko) 2019-07-19 2024-06-25 삼성전자주식회사 자기 기억 소자
US11522126B2 (en) 2019-10-14 2022-12-06 Applied Materials, Inc. Magnetic tunnel junctions with protection layers
CN112993152B (zh) * 2019-12-02 2024-07-19 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11917925B2 (en) 2020-01-23 2024-02-27 Everspin Technologies, Inc. Magnetoresistive devices and methods therefor
CN113328033B (zh) * 2020-02-28 2024-12-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11751483B2 (en) * 2020-12-28 2023-09-05 Globalfoundries Singapore Pte. Ltd. Spin diode devices
CN113657586B (zh) * 2021-07-21 2025-08-12 中国科学院微电子研究所 一种基于自旋轨道矩的神经元器件
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same
CN115884663A (zh) * 2023-01-12 2023-03-31 苏州凌存科技有限公司 一种磁性存储单元及磁性存储器
CN115799376B (zh) * 2023-02-09 2023-05-12 材料科学姑苏实验室 一种叠层光伏电池中间互联层结构及其制备方法与应用

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203405A (ja) * 1999-10-21 2001-07-27 Motorola Inc 磁場応答が改良された磁気素子とその作製方法
JP2001345493A (ja) * 2000-05-30 2001-12-14 Sony Corp トンネル磁気抵抗効果素子、及びトンネル磁気抵抗効果型磁気ヘッド
JP2002204002A (ja) * 2000-12-28 2002-07-19 Nec Corp スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
JP2003283001A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 磁気抵抗効果素子およびこれを用いた磁気メモリ
JP2003304012A (ja) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子
JP2004023015A (ja) * 2002-06-20 2004-01-22 Sony Corp 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
JP2004071714A (ja) * 2002-08-02 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US20040042128A1 (en) * 2002-08-30 2004-03-04 Slaughter Jon M. Nanocrystalline layers for improved MRAM tunnel junctions
JP2004071897A (ja) * 2002-08-07 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US20040041183A1 (en) * 2002-08-30 2004-03-04 Slaughter Jon M. Amorphous alloys for magnetic devices
JP2004158856A (ja) * 2002-11-01 2004-06-03 Hewlett-Packard Development Co Lp 磁気抵抗素子のための強磁性層

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JP2000091667A (ja) * 1998-09-09 2000-03-31 Read Rite Smi Kk スピンバルブ磁気抵抗センサ及び薄膜磁気ヘッド
US6181537B1 (en) * 1999-03-29 2001-01-30 International Business Machines Corporation Tunnel junction structure with junction layer embedded in amorphous ferromagnetic layers
JP2001007420A (ja) * 1999-06-17 2001-01-12 Sony Corp 磁気抵抗効果膜とこれを用いた磁気読取りセンサ
JP3557140B2 (ja) * 1999-12-28 2004-08-25 株式会社東芝 磁気抵抗効果素子及び磁気再生装置
CA2399790C (en) 2000-02-02 2012-10-30 Ralph A. Tripp Cd40 ligand adjuvant for respiratory syncytial virus
US20030072109A1 (en) * 2000-02-28 2003-04-17 Manish Sharma Magnetoresistive element including smooth spacer interface
JP3686572B2 (ja) * 2000-04-12 2005-08-24 アルプス電気株式会社 交換結合膜の製造方法と、前記交換結合膜を用いた磁気抵抗効果素子の製造方法、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッドの製造方法
EP1187103A3 (en) * 2000-08-04 2003-01-08 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, head, and memory element
US20030021908A1 (en) * 2001-07-27 2003-01-30 Nickel Janice H. Gas cluster ion beam process for smoothing MRAM cells
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6600184B1 (en) * 2002-03-25 2003-07-29 International Business Machines Corporation System and method for improving magnetic tunnel junction sensor magnetoresistance
JP4100025B2 (ja) * 2002-04-09 2008-06-11 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
US6724027B2 (en) * 2002-04-18 2004-04-20 Hewlett-Packard Development Company, L.P. Magnetic shielding for MRAM devices
US6713801B1 (en) * 2002-07-09 2004-03-30 Western Digital (Fremont), Inc. α-tantalum lead for use with magnetic tunneling junctions
JP3975268B2 (ja) * 2002-07-22 2007-09-12 国立大学法人東北大学 不揮発性固体磁気メモリ、不揮発性固体磁気メモリの保磁力制御方法、及び不揮発性固体磁気メモリの記録方法
JP3866641B2 (ja) * 2002-09-24 2007-01-10 株式会社東芝 磁気記憶装置およびその製造方法
US6756128B2 (en) * 2002-11-07 2004-06-29 International Business Machines Corporation Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203405A (ja) * 1999-10-21 2001-07-27 Motorola Inc 磁場応答が改良された磁気素子とその作製方法
JP2001345493A (ja) * 2000-05-30 2001-12-14 Sony Corp トンネル磁気抵抗効果素子、及びトンネル磁気抵抗効果型磁気ヘッド
JP2002204002A (ja) * 2000-12-28 2002-07-19 Nec Corp スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
JP2003283001A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 磁気抵抗効果素子およびこれを用いた磁気メモリ
JP2003304012A (ja) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子
JP2004023015A (ja) * 2002-06-20 2004-01-22 Sony Corp 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
JP2004071714A (ja) * 2002-08-02 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP2004071897A (ja) * 2002-08-07 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US20040042128A1 (en) * 2002-08-30 2004-03-04 Slaughter Jon M. Nanocrystalline layers for improved MRAM tunnel junctions
US20040041183A1 (en) * 2002-08-30 2004-03-04 Slaughter Jon M. Amorphous alloys for magnetic devices
JP2004158856A (ja) * 2002-11-01 2004-06-03 Hewlett-Packard Development Co Lp 磁気抵抗素子のための強磁性層

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194327A (ja) * 2006-01-18 2007-08-02 Alps Electric Co Ltd トンネル型磁気検出素子
JP2008135432A (ja) * 2006-11-27 2008-06-12 Tdk Corp トンネル磁気抵抗効果素子及びその製造方法
JP2008227499A (ja) * 2007-03-08 2008-09-25 Magic Technologies Inc 磁気トンネル接合素子およびその形成方法、磁気ランダムアクセスメモリ
US8278123B2 (en) 2008-09-03 2012-10-02 Canon Anelva Corporation Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline MgO tunnel barrier
KR101242628B1 (ko) * 2008-09-03 2013-03-19 캐논 아네르바 가부시키가이샤 비정질 또는 미세결정질 ＭｇＯ 터널 배리어용 강자성 우선 과립 성장 촉진 시드층
GB2475646A (en) * 2008-09-03 2011-05-25 Canon Anelva Corp Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
WO2010026667A1 (en) * 2008-09-03 2010-03-11 Canon Anelva Corporation Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
JP2012502447A (ja) * 2008-09-03 2012-01-26 キヤノンアネルバ株式会社 非晶質または微結晶質ＭｇＯトンネル障壁に用いる優先グレイン成長強磁性シード層
WO2010026802A1 (en) * 2008-09-03 2010-03-11 Canon Anelva Corporation FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORPHOUS OR MICROCRYSTALLINE MgO TUNNEL BARRIER
GB2475646B (en) * 2008-09-03 2013-03-13 Canon Anelva Corp Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
JP2011123923A (ja) * 2009-12-08 2011-06-23 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果ヘッド、磁気記録再生装置
JP2016046492A (ja) * 2014-08-26 2016-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20160084317A (ko) * 2015-01-05 2016-07-13 삼성전자주식회사 스핀 전달 토크 자기 램의 응용 분야에서 사용될 수 있는 수직 자기 접합에 하부 기준층을 제공하는 방법 및 시스템
KR102471717B1 (ko) 2015-01-05 2022-11-28 삼성전자주식회사 스핀 전달 토크 자기 램의 응용 분야에서 사용될 수 있는 수직 자기 접합에 하부 기준층을 제공하는 방법 및 시스템
WO2017052635A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Psttm device with bottom electrode interface material
US10326075B2 (en) 2015-09-25 2019-06-18 Intel Corporation PSTTM device with multi-layered filter stack
US10340445B2 (en) 2015-09-25 2019-07-02 Intel Corporation PSTTM device with bottom electrode interface material
US10580970B2 (en) 2015-09-25 2020-03-03 Intel Corporation PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability
US10847714B2 (en) 2015-09-25 2020-11-24 Intel Corporation PSTTM device with multi-layered filter stack

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