JP2008504680A5 - - Google Patents

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Publication number
JP2008504680A5
JP2008504680A5 JP2007518063A JP2007518063A JP2008504680A5 JP 2008504680 A5 JP2008504680 A5 JP 2008504680A5 JP 2007518063 A JP2007518063 A JP 2007518063A JP 2007518063 A JP2007518063 A JP 2007518063A JP 2008504680 A5 JP2008504680 A5 JP 2008504680A5
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JP
Japan
Prior art keywords
doped region
region
substantially continuous
doped
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007518063A
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English (en)
Japanese (ja)
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JP2008504680A (ja
Filing date
Publication date
Priority claimed from US10/875,105 external-priority patent/US7141860B2/en
Application filed filed Critical
Publication of JP2008504680A publication Critical patent/JP2008504680A/ja
Publication of JP2008504680A5 publication Critical patent/JP2008504680A5/ja
Pending legal-status Critical Current

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JP2007518063A 2004-06-23 2005-05-11 Ｌｄｍｏｓトランジスタ Pending JP2008504680A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/875,105 US7141860B2 (en) 2004-06-23 2004-06-23 LDMOS transistor
PCT/US2005/016254 WO2006007070A2 (en) 2004-06-23 2005-05-11 Ldmos transistor

Publications (2)

Publication Number Publication Date
JP2008504680A JP2008504680A (ja) 2008-02-14
JP2008504680A5 true JP2008504680A5 (cg-RX-API-DMAC7.html) 2008-07-03

Family

ID=35504712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007518063A Pending JP2008504680A (ja) 2004-06-23 2005-05-11 Ｌｄｍｏｓトランジスタ

Country Status (7)

Country Link
US (1) US7141860B2 (cg-RX-API-DMAC7.html)
EP (1) EP1759416A4 (cg-RX-API-DMAC7.html)
JP (1) JP2008504680A (cg-RX-API-DMAC7.html)
KR (1) KR20070026625A (cg-RX-API-DMAC7.html)
CN (1) CN100481493C (cg-RX-API-DMAC7.html)
TW (1) TWI393255B (cg-RX-API-DMAC7.html)
WO (1) WO2006007070A2 (cg-RX-API-DMAC7.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
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US7608907B2 (en) * 2005-01-06 2009-10-27 Micrel, Inc. LDMOS gate controlled schottky diode
US20060163658A1 (en) * 2005-01-21 2006-07-27 Anderson Samuel J Monolithic MOSFET and schottky diode for mobile phone boost converter
JP4845410B2 (ja) * 2005-03-31 2011-12-28 株式会社リコー 半導体装置
US8004038B2 (en) * 2006-05-22 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process
JP5222466B2 (ja) * 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR100932137B1 (ko) * 2007-06-08 2009-12-16 주식회사 동부하이텍 수평형 디모스 소자의 구조 및 그 제조방법
US7541247B2 (en) * 2007-07-16 2009-06-02 International Business Machines Corporation Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
JP5487852B2 (ja) * 2008-09-30 2014-05-14 サンケン電気株式会社 半導体装置
KR101522530B1 (ko) * 2008-12-24 2015-05-26 주식회사 동부하이텍 정전기 방전 보호 소자 및 그 제조 방법
US8525257B2 (en) * 2009-11-18 2013-09-03 Micrel, Inc. LDMOS transistor with asymmetric spacer as gate
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
US8878329B2 (en) * 2010-09-17 2014-11-04 United Microelectronics Corp. High voltage device having Schottky diode
US8587058B2 (en) * 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
CN103208520B (zh) * 2012-01-13 2017-06-23 联华电子股份有限公司 横向扩散金属氧化半导体元件
US8686502B2 (en) * 2012-03-19 2014-04-01 Texas Instruments Incorporated Schottky diode integrated into LDMOS
US20140001546A1 (en) 2012-06-29 2014-01-02 Hubert M. Bode Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof
US9111767B2 (en) 2012-06-29 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US9129990B2 (en) 2012-06-29 2015-09-08 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US9142554B2 (en) 2012-06-29 2015-09-22 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof
CN103377612B (zh) * 2013-07-15 2016-06-15 四川长虹电器股份有限公司 一种改善等离子显示器emi低频超标的行扫描芯片控制方法
CN104701372B (zh) * 2013-12-06 2017-10-27 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法
CN104752423B (zh) * 2013-12-31 2018-08-21 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
CN104603949B (zh) 2014-01-27 2019-10-01 瑞萨电子株式会社 半导体器件
US9461639B2 (en) 2014-05-16 2016-10-04 Freescale Semiconductor, Inc. Semiconductor device and power circuit including a sense transistor for current sensing
EP3183753B1 (en) 2014-08-19 2025-03-19 Vishay-Siliconix Mosfet semiconductor device
KR102391348B1 (ko) * 2014-12-29 2022-04-28 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
TWI641107B (zh) * 2017-12-25 2018-11-11 新唐科技股份有限公司 橫向擴散金屬氧化物半導體場效電晶體
TWI646653B (zh) * 2017-12-28 2019-01-01 新唐科技股份有限公司 橫向擴散金屬氧化物半導體場效電晶體
TWI673880B (zh) * 2018-11-21 2019-10-01 新唐科技股份有限公司 橫向擴散金氧半導體裝置
DE102019130376B4 (de) 2019-01-04 2024-11-07 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit schottky-kontakt
US12069862B2 (en) * 2021-07-23 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor dies including low and high workfunction semiconductor devices
TWI856473B (zh) * 2023-01-04 2024-09-21 世界先進積體電路股份有限公司 半導體裝置

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US6995428B2 (en) * 2004-02-24 2006-02-07 System General Corp. High voltage LDMOS transistor having an isolated structure

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