JP2008504669A - 超高速パルスレーザ堆積を使用する電気化学デバイス作製方法。 - Google Patents
超高速パルスレーザ堆積を使用する電気化学デバイス作製方法。 Download PDFInfo
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Abstract
【図1】
Description
一つの観点に関して、多層薄膜電気化学デバイスを作製する方法が提供される。その方法は、
チャンバー中に第1ターゲット材料を供給するステップと、
チャンバー中に基板を供給するステップと、
第1プラズマを生成するために前記第1ターゲット材料に向けられた第1断続レーザビームを放射するステップであって、前記第1断続レーザビームの各パルスは約20fsから約500psのパルス持続時間をもつ、ステップと、
第1薄膜を形成するために前記基板の上に前記第1プラズマを堆積するステップと、
前記チャンバー中に第2ターゲット材料を供給するステップと、
第2プラズマを生成するために前記第2ターゲット材料に向けられた第2断続レーザビームを放射するステップであって、前記第2断続レーザビームの各パルスは約20fsから約500psのパルス持続時間をもつ、ステップと、
第2薄膜を形成するために前記第1薄膜の上あるいは上方に前記第2プラズマを堆積するステップと、を有する。
[実施例]
[実施例1]薄膜形成
[実施例2]薄膜の構造への堆積温度の影響
[実施例3]薄膜の化学量論への堆積温度の効果
[実施例4]薄膜の表面形態
[実施例5]薄膜の電気化学性能
Claims (28)
- チャンバー中に第1ターゲット材料を供給するステップと、
前記チャンバー中に基板を供給するステップと、
第1プラズマを生成するために前記第1ターゲット材料に向けられた第1断続レーザビームを放射するステップであって、前記第1断続レーザビームの各パルスは約20fsから約500psのパルス持続時間をもつ、ステップと、
第1薄膜を形成するために前記基板の上に前記第1プラズマを堆積するステップと、
前記チャンバー中に第2ターゲット材料を供給するステップと、
第2プラズマを生成するために前記第2ターゲット材料に向けられた第2断続レーザビームを放射するステップであって、前記第2断続レーザビームの各パルスは約20fsから約500psのパルス持続時間をもつ、ステップと、
第2薄膜を形成するために前記第1薄膜の上あるいは上方に前記第2プラズマを堆積するステップと、
を有する多層薄膜電気化学デバイス作製方法。 - 前記第1及び第2断続レーザビームの各パルスは、約20fsから約300psのパルス持続時間をもつ請求項1の方法。
- 前記第1及び第2断続レーザビームの各パルスは、約50fsから約1000fsのパルス持続時間をもつ請求項2の方法。
- 前記第1及び第2プラズマは、約1μm或いはそれより大きなサイズの溶融小滴及び/或いは粒子から実質的に解放されている請求項1の方法。
- 前記薄膜は、アノード薄膜或いはカソード薄膜である請求項1の方法。
- 前記第2薄膜は、固体電解質薄膜である請求項1の方法。
- 前記第1薄膜がアノード薄膜のとき前記第2薄膜はカソード薄膜であり、或いは前記第1薄膜がカソード薄膜のとき前記第2薄膜はアノード薄膜であり、固体電解質が該第1と第2薄膜の間に形成される請求項1の方法。
- 前記固体電解質は、伝導ポリマーで形成される請求項7の方法。
- 前記基板は、金属、シリコン或いは伝導ポリマーを含む請求項1の方法。
- 前記第1プラズマを堆積するステップの間の堆積温度は、約20℃から約900℃である請求項1の方法。
- 前記第1プラズマを堆積するステップの間の堆積温度は、約300℃から約500℃である請求項10の方法。
- 前記第2プラズマを堆積するステップの間の堆積温度は、約20℃から約900℃である請求項1の方法。
- 前記第2プラズマを堆積するステップの間の堆積温度は、約300℃から約500℃である請求項12の方法。
- 前記第2プラズマを堆積するステップの間の堆積温度は、約300℃未満である請求項8の方法。
- 前記第2プラズマを堆積するステップの間の堆積温度は、約25℃から約140℃である請求項14の方法。
- 前記第1と第2薄膜の各厚さは、約10μm未満である請求項1の方法。
- 前記第1と第2薄膜の各々は、約500nmRMS未満の平均表面粗度をもつ請求項1の方法。
- 前記第1と第2薄膜の各々は、約50nmRMS未満の平均表面粗度をもつ請求項17の方法。
- 前記電気化学デバイスは、ソーラーセル、エレクトロクロミックセル、微細燃料セル及び薄膜バッテリからなる群から選ばれる請求項1の方法。
- 堆積温度、或いは前記第1と第2プラズマが前記第1と第2薄膜の所定の化学量論を得るために堆積される温度、を選定するステップをさらに有する請求項1の方法。
- 前記チャンバー中に第3ターゲット材料を供給するステップと、
第3プラズマを生成するために前記第3ターゲット材料に向けられた第3断続レーザビームを放射するステップであって、前記第3断続レーザビームの各パルスは約20fsから約500psのパルス持続時間をもつ、ステップと、
第3薄膜を形成するために前記第2薄膜の上あるいは上方に前記第3プラズマを堆積するステップと、
をさらに有する請求項1の方法。 - 前記第1、第2及び第3プラズマは、約1μm或いはそれより大きなサイズの溶融小滴及び/或いは粒子から実質的に解放されている請求項21の方法。
- 前記第1薄膜はカソード薄膜であり、前記第2薄膜は固体電解質薄膜であり、前記第3薄膜はアノード薄膜である請求項21の方法。
- 前記第1薄膜はアノード薄膜であり、前記第2薄膜は固体電解質薄膜であり、前記第3薄膜はカソード薄膜である請求項21の方法。
- 前記第1、第2、第3断続レーザビームの各パルスは、約20fsから約300psのパルス持続時間をもつ請求項21の方法。
- 前記第1、第2、第3断続レーザビームの各パルスは、約50fsから約1000fsのパルス持続時間をもつ請求項25の方法。
- 前記第1及び/或いは第2プラズマを堆積するステップの間の堆積温度は、約300℃未満である請求項1の方法。
- 前記第1及び/或いは第2プラズマを堆積するステップの間の堆積温度は、約25℃から約140℃である請求項27の方法。
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US10/863,362 US7879410B2 (en) | 2004-06-09 | 2004-06-09 | Method of fabricating an electrochemical device using ultrafast pulsed laser deposition |
US10/863,362 | 2004-06-09 | ||
PCT/US2005/020403 WO2005125288A2 (en) | 2004-06-09 | 2005-06-09 | Method of fabricating an electrochemical device using ultrafast pulsed laser deposition |
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JP2008504669A true JP2008504669A (ja) | 2008-02-14 |
JP2008504669A5 JP2008504669A5 (ja) | 2012-05-10 |
JP4977023B2 JP4977023B2 (ja) | 2012-07-18 |
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US (2) | US7879410B2 (ja) |
EP (1) | EP1767070A4 (ja) |
JP (1) | JP4977023B2 (ja) |
KR (1) | KR101167338B1 (ja) |
CN (1) | CN101035924B (ja) |
WO (1) | WO2005125288A2 (ja) |
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Also Published As
Publication number | Publication date |
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KR101167338B1 (ko) | 2012-07-19 |
US20050276931A1 (en) | 2005-12-15 |
JP4977023B2 (ja) | 2012-07-18 |
CN101035924A (zh) | 2007-09-12 |
WO2005125288A2 (en) | 2005-12-29 |
KR20070020085A (ko) | 2007-02-16 |
US20120003395A1 (en) | 2012-01-05 |
EP1767070A4 (en) | 2008-04-23 |
CN101035924B (zh) | 2010-12-15 |
EP1767070A2 (en) | 2007-03-28 |
US7879410B2 (en) | 2011-02-01 |
WO2005125288A3 (en) | 2007-03-15 |
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