JP2008311351A - 荷電粒子線装置 - Google Patents

荷電粒子線装置 Download PDF

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Publication number
JP2008311351A
JP2008311351A JP2007156357A JP2007156357A JP2008311351A JP 2008311351 A JP2008311351 A JP 2008311351A JP 2007156357 A JP2007156357 A JP 2007156357A JP 2007156357 A JP2007156357 A JP 2007156357A JP 2008311351 A JP2008311351 A JP 2008311351A
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JP
Japan
Prior art keywords
sample
electrostatic chuck
charged particle
particle beam
dummy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007156357A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008311351A5 (https=
Inventor
Maki Mizuochi
真樹 水落
Shoji Tomita
将司 富田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2007156357A priority Critical patent/JP2008311351A/ja
Priority to US12/137,128 priority patent/US7763863B2/en
Publication of JP2008311351A publication Critical patent/JP2008311351A/ja
Publication of JP2008311351A5 publication Critical patent/JP2008311351A5/ja
Priority to US12/828,781 priority patent/US8158955B2/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2008—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated specially adapted for studying electrical or magnetical properties of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/2811—Large objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007156357A 2007-06-13 2007-06-13 荷電粒子線装置 Pending JP2008311351A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007156357A JP2008311351A (ja) 2007-06-13 2007-06-13 荷電粒子線装置
US12/137,128 US7763863B2 (en) 2007-06-13 2008-06-11 Charged particle beam application apparatus
US12/828,781 US8158955B2 (en) 2007-06-13 2010-07-01 Charged particle beam application apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007156357A JP2008311351A (ja) 2007-06-13 2007-06-13 荷電粒子線装置

Publications (2)

Publication Number Publication Date
JP2008311351A true JP2008311351A (ja) 2008-12-25
JP2008311351A5 JP2008311351A5 (https=) 2009-07-30

Family

ID=40131437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007156357A Pending JP2008311351A (ja) 2007-06-13 2007-06-13 荷電粒子線装置

Country Status (2)

Country Link
US (2) US7763863B2 (https=)
JP (1) JP2008311351A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001586A1 (ja) * 2009-07-03 2011-01-06 株式会社 日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線画像を安定に取得する方法
JP2015026553A (ja) * 2013-07-29 2015-02-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2015095542A (ja) * 2013-11-12 2015-05-18 株式会社ディスコ 位置出しテーブル
US9601307B2 (en) 2013-03-15 2017-03-21 Hitachi High-Technologies Corporation Charged particle radiation apparatus
JP2020009880A (ja) * 2018-07-06 2020-01-16 株式会社日立ハイテクマニファクチャ＆サービス 基板保持具及び走査型電子顕微鏡装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311351A (ja) * 2007-06-13 2008-12-25 Hitachi High-Technologies Corp 荷電粒子線装置
JP2009302415A (ja) * 2008-06-17 2009-12-24 Hitachi High-Technologies Corp 荷電粒子線装置，試料保持システム，試料の保持方法、および、試料の離脱方法
TWI465708B (zh) * 2008-12-29 2014-12-21 Ind Tech Res Inst 聚焦式離子束系統之物件加工方法及應用於該方法之載具
WO2010097858A1 (ja) * 2009-02-27 2010-09-02 株式会社 日立ハイテクノロジーズ 電子顕微鏡および試料保持方法
KR101849383B1 (ko) * 2010-06-08 2018-04-16 액셀리스 테크놀러지스, 인크. 고온에서 기계적 클램프 성능을 포함하는 가열된 정전 척
JP5331828B2 (ja) * 2011-01-14 2013-10-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2014144533A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Position and temperature monitoring of ald platen susceptor
JP6496184B2 (ja) * 2014-06-27 2019-04-03 日本電子株式会社 試料導入方法、試料ステージ、および荷電粒子線装置
US9449805B2 (en) * 2014-09-23 2016-09-20 Agilent Technologies Inc. Isolation of charged particle optics from vacuum chamber deformations
US10186446B2 (en) * 2016-09-30 2019-01-22 Axcelis Technology, Inc. Adjustable circumference electrostatic clamp
JP2019215957A (ja) * 2018-06-11 2019-12-19 株式会社荏原製作所 ビームベンダ
JP2020199517A (ja) * 2019-06-07 2020-12-17 ファナック株式会社 レーザ加工システム
CN110982686B (zh) * 2019-12-27 2025-01-17 珠海迪尔生物工程股份有限公司 微生物观测测试卡、观测系统和观测方法

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JP2004079516A (ja) * 1998-04-20 2004-03-11 Hitachi Ltd 試料保持機，半導体製造装置，半導体検査装置、および試料の保持方法
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法

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US5556204A (en) * 1990-07-02 1996-09-17 Hitachi, Ltd. Method and apparatus for detecting the temperature of a sample
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US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
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JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
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JP3463599B2 (ja) 1998-04-20 2003-11-05 株式会社日立製作所 試料保持機，半導体製造装置，半導体検査装置，回路パターン検査装置，荷電粒子線応用装置，校正用基板，試料の保持方法，回路パターン検査方法、および、荷電粒子線応用方法
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US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP3905462B2 (ja) * 2002-11-20 2007-04-18 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
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JP4637684B2 (ja) * 2004-09-10 2011-02-23 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
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JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
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JP2004079516A (ja) * 1998-04-20 2004-03-11 Hitachi Ltd 試料保持機，半導体製造装置，半導体検査装置、および試料の保持方法
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001586A1 (ja) * 2009-07-03 2011-01-06 株式会社 日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線画像を安定に取得する方法
JP2011014414A (ja) * 2009-07-03 2011-01-20 Hitachi High-Technologies Corp 荷電粒子線装置及び荷電粒子線画像を安定に取得する方法
US8536540B2 (en) 2009-07-03 2013-09-17 Hitachi High-Technologies Corporation Charged particle beam apparatus and method for stably obtaining charged particle beam image
US9601307B2 (en) 2013-03-15 2017-03-21 Hitachi High-Technologies Corporation Charged particle radiation apparatus
JP2015026553A (ja) * 2013-07-29 2015-02-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2015095542A (ja) * 2013-11-12 2015-05-18 株式会社ディスコ 位置出しテーブル
JP2020009880A (ja) * 2018-07-06 2020-01-16 株式会社日立ハイテクマニファクチャ＆サービス 基板保持具及び走査型電子顕微鏡装置
JP6994437B2 (ja) 2018-07-06 2022-01-14 株式会社日立ハイテク 基板保持具及び走査型電子顕微鏡装置

Also Published As

Publication number Publication date
US20100264330A1 (en) 2010-10-21
US8158955B2 (en) 2012-04-17
US7763863B2 (en) 2010-07-27
US20080308743A1 (en) 2008-12-18

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