JP2008300687A - プラズマドーピング方法及びその装置 - Google Patents

プラズマドーピング方法及びその装置 Download PDF

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Publication number
JP2008300687A
JP2008300687A JP2007146034A JP2007146034A JP2008300687A JP 2008300687 A JP2008300687 A JP 2008300687A JP 2007146034 A JP2007146034 A JP 2007146034A JP 2007146034 A JP2007146034 A JP 2007146034A JP 2008300687 A JP2008300687 A JP 2008300687A
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JP
Japan
Prior art keywords
plasma
gas
doping
impurity element
plasma doping
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Pending
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JP2007146034A
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English (en)
Japanese (ja)
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JP2008300687A5 (https=
Inventor
Masahiro Horigome
正弘 堀込
Yoshihiro Ishida
義弘 石田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007146034A priority Critical patent/JP2008300687A/ja
Priority to US12/601,993 priority patent/US20100167507A1/en
Priority to PCT/JP2008/058778 priority patent/WO2008149643A1/ja
Priority to DE112008001446T priority patent/DE112008001446T5/de
Priority to TW097117747A priority patent/TW200913019A/zh
Publication of JP2008300687A publication Critical patent/JP2008300687A/ja
Publication of JP2008300687A5 publication Critical patent/JP2008300687A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2007146034A 2007-05-31 2007-05-31 プラズマドーピング方法及びその装置 Pending JP2008300687A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007146034A JP2008300687A (ja) 2007-05-31 2007-05-31 プラズマドーピング方法及びその装置
US12/601,993 US20100167507A1 (en) 2007-05-31 2008-05-13 Plasma doping apparatus and plasma doping method
PCT/JP2008/058778 WO2008149643A1 (ja) 2007-05-31 2008-05-13 プラズマドーピング装置及び方法
DE112008001446T DE112008001446T5 (de) 2007-05-31 2008-05-13 Plasmadotierungsvorrichtung und Plasmadotierungsverfahren
TW097117747A TW200913019A (en) 2007-05-31 2008-05-14 Plasma doping apparatus and plasma doping method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007146034A JP2008300687A (ja) 2007-05-31 2007-05-31 プラズマドーピング方法及びその装置

Publications (2)

Publication Number Publication Date
JP2008300687A true JP2008300687A (ja) 2008-12-11
JP2008300687A5 JP2008300687A5 (https=) 2010-09-02

Family

ID=40093468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007146034A Pending JP2008300687A (ja) 2007-05-31 2007-05-31 プラズマドーピング方法及びその装置

Country Status (5)

Country Link
US (1) US20100167507A1 (https=)
JP (1) JP2008300687A (https=)
DE (1) DE112008001446T5 (https=)
TW (1) TW200913019A (https=)
WO (1) WO2008149643A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011142238A (ja) * 2010-01-08 2011-07-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2013073950A (ja) * 2011-09-26 2013-04-22 Toshiba Corp 半導体装置の製造方法
JP2014127572A (ja) * 2012-12-26 2014-07-07 Tokyo Electron Ltd プラズマドーピング装置、およびプラズマドーピング方法
WO2016104206A1 (ja) * 2014-12-24 2016-06-30 東京エレクトロン株式会社 ドーピング方法、ドーピング装置および半導体素子の製造方法
KR20160150035A (ko) * 2015-06-19 2016-12-28 도쿄엘렉트론가부시키가이샤 공정 화학 제어에 가열된 기판을 이용하는 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5424299B2 (ja) * 2008-12-16 2014-02-26 国立大学法人東北大学 イオン注入装置、イオン注入方法、及び半導体装置
WO2011080876A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 プラズマドーピング装置
WO2011161965A1 (en) * 2010-06-23 2011-12-29 Tokyo Electron Limited Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
JP5742810B2 (ja) * 2012-10-02 2015-07-01 東京エレクトロン株式会社 プラズマドーピング装置、プラズマドーピング方法、および半導体素子の製造方法
JP2015128108A (ja) * 2013-12-27 2015-07-09 東京エレクトロン株式会社 ドーピング方法、ドーピング装置及び半導体素子の製造方法
CN112346638B (zh) * 2014-01-17 2024-06-28 曼托第一收购有限责任公司 透视计算机显示系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294550A (ja) * 1999-04-05 2000-10-20 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
JP2004047695A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置
JP2005086023A (ja) * 2003-09-09 2005-03-31 Tadahiro Omi 半導体装置及びその製造方法
WO2006106858A1 (ja) * 2005-03-31 2006-10-12 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置
WO2006121131A1 (ja) * 2005-05-12 2006-11-16 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法およびプラズマドーピング装置
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04319243A (ja) 1991-04-17 1992-11-10 Tokyo Electron Ltd イオン注入装置
JPH05251033A (ja) 1992-03-03 1993-09-28 Tokyo Electron Ltd イオン注入装置
JP3136054B2 (ja) * 1994-08-16 2001-02-19 東京エレクトロン株式会社 プラズマ処理装置
JP2000100790A (ja) * 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
JP5138131B2 (ja) * 2001-03-28 2013-02-06 忠弘 大見 マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
EP1804274A3 (en) * 2001-03-28 2007-07-18 Tadahiro Ohmi Plasma processing apparatus
JP4278915B2 (ja) * 2002-04-02 2009-06-17 東京エレクトロン株式会社 エッチング方法
JP4544447B2 (ja) * 2002-11-29 2010-09-15 パナソニック株式会社 プラズマドーピング方法
JP4532897B2 (ja) * 2003-12-26 2010-08-25 財団法人国際科学振興財団 プラズマ処理装置、プラズマ処理方法及び製品の製造方法
JP2007146034A (ja) 2005-11-29 2007-06-14 Sumitomo Metal Mining Co Ltd 蛍光体薄膜とその成膜方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294550A (ja) * 1999-04-05 2000-10-20 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
JP2004047695A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置
JP2005086023A (ja) * 2003-09-09 2005-03-31 Tadahiro Omi 半導体装置及びその製造方法
WO2006106858A1 (ja) * 2005-03-31 2006-10-12 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置
WO2006121131A1 (ja) * 2005-05-12 2006-11-16 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法およびプラズマドーピング装置
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011142238A (ja) * 2010-01-08 2011-07-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2013073950A (ja) * 2011-09-26 2013-04-22 Toshiba Corp 半導体装置の製造方法
JP2014127572A (ja) * 2012-12-26 2014-07-07 Tokyo Electron Ltd プラズマドーピング装置、およびプラズマドーピング方法
US9029249B2 (en) 2012-12-26 2015-05-12 Tokyo Electron Limited Plasma doping apparatus and plasma doping method
KR101544938B1 (ko) * 2012-12-26 2015-08-17 도쿄엘렉트론가부시키가이샤 플라즈마 도핑 장치 및 플라즈마 도핑 방법
WO2016104206A1 (ja) * 2014-12-24 2016-06-30 東京エレクトロン株式会社 ドーピング方法、ドーピング装置および半導体素子の製造方法
KR20160150035A (ko) * 2015-06-19 2016-12-28 도쿄엘렉트론가부시키가이샤 공정 화학 제어에 가열된 기판을 이용하는 방법
KR102611265B1 (ko) * 2015-06-19 2023-12-06 도쿄엘렉트론가부시키가이샤 공정 화학 제어에 가열된 기판을 이용하는 방법

Also Published As

Publication number Publication date
US20100167507A1 (en) 2010-07-01
WO2008149643A1 (ja) 2008-12-11
TW200913019A (en) 2009-03-16
DE112008001446T5 (de) 2010-05-06

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