DE112008001446T5 - Plasmadotierungsvorrichtung und Plasmadotierungsverfahren - Google Patents

Plasmadotierungsvorrichtung und Plasmadotierungsverfahren Download PDF

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Publication number
DE112008001446T5
DE112008001446T5 DE112008001446T DE112008001446T DE112008001446T5 DE 112008001446 T5 DE112008001446 T5 DE 112008001446T5 DE 112008001446 T DE112008001446 T DE 112008001446T DE 112008001446 T DE112008001446 T DE 112008001446T DE 112008001446 T5 DE112008001446 T5 DE 112008001446T5
Authority
DE
Germany
Prior art keywords
plasma
doping
gas
process chamber
supply unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112008001446T
Other languages
German (de)
English (en)
Inventor
Masahiro Nirasaki Horigome
Yoshihiro Nirasaki Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE112008001446T5 publication Critical patent/DE112008001446T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
DE112008001446T 2007-05-31 2008-05-13 Plasmadotierungsvorrichtung und Plasmadotierungsverfahren Withdrawn DE112008001446T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-146034 2007-05-31
JP2007146034A JP2008300687A (ja) 2007-05-31 2007-05-31 プラズマドーピング方法及びその装置
PCT/JP2008/058778 WO2008149643A1 (ja) 2007-05-31 2008-05-13 プラズマドーピング装置及び方法

Publications (1)

Publication Number Publication Date
DE112008001446T5 true DE112008001446T5 (de) 2010-05-06

Family

ID=40093468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008001446T Withdrawn DE112008001446T5 (de) 2007-05-31 2008-05-13 Plasmadotierungsvorrichtung und Plasmadotierungsverfahren

Country Status (5)

Country Link
US (1) US20100167507A1 (https=)
JP (1) JP2008300687A (https=)
DE (1) DE112008001446T5 (https=)
TW (1) TW200913019A (https=)
WO (1) WO2008149643A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5424299B2 (ja) * 2008-12-16 2014-02-26 国立大学法人東北大学 イオン注入装置、イオン注入方法、及び半導体装置
WO2011080876A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 プラズマドーピング装置
JP2011142238A (ja) * 2010-01-08 2011-07-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法
WO2011161965A1 (en) * 2010-06-23 2011-12-29 Tokyo Electron Limited Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
JP2013073950A (ja) * 2011-09-26 2013-04-22 Toshiba Corp 半導体装置の製造方法
JP5742810B2 (ja) * 2012-10-02 2015-07-01 東京エレクトロン株式会社 プラズマドーピング装置、プラズマドーピング方法、および半導体素子の製造方法
JP5700032B2 (ja) * 2012-12-26 2015-04-15 東京エレクトロン株式会社 プラズマドーピング装置、およびプラズマドーピング方法
JP2015128108A (ja) * 2013-12-27 2015-07-09 東京エレクトロン株式会社 ドーピング方法、ドーピング装置及び半導体素子の製造方法
CN112346638B (zh) * 2014-01-17 2024-06-28 曼托第一收购有限责任公司 透视计算机显示系统
US20180012763A1 (en) * 2014-12-24 2018-01-11 Tokyo Electron Limited Doping method, doping apparatus, and semiconductor element manufacturing method
US10249498B2 (en) * 2015-06-19 2019-04-02 Tokyo Electron Limited Method for using heated substrates for process chemistry control

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04319243A (ja) 1991-04-17 1992-11-10 Tokyo Electron Ltd イオン注入装置
JPH05251033A (ja) 1992-03-03 1993-09-28 Tokyo Electron Ltd イオン注入装置
JP2007146034A (ja) 2005-11-29 2007-06-14 Sumitomo Metal Mining Co Ltd 蛍光体薄膜とその成膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3136054B2 (ja) * 1994-08-16 2001-02-19 東京エレクトロン株式会社 プラズマ処理装置
JP2000100790A (ja) * 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
JP4255563B2 (ja) * 1999-04-05 2009-04-15 東京エレクトロン株式会社 半導体製造方法及び半導体製造装置
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
JP5138131B2 (ja) * 2001-03-28 2013-02-06 忠弘 大見 マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
EP1804274A3 (en) * 2001-03-28 2007-07-18 Tadahiro Ohmi Plasma processing apparatus
JP4278915B2 (ja) * 2002-04-02 2009-06-17 東京エレクトロン株式会社 エッチング方法
JP4013674B2 (ja) * 2002-07-11 2007-11-28 松下電器産業株式会社 プラズマドーピング方法及び装置
JP4544447B2 (ja) * 2002-11-29 2010-09-15 パナソニック株式会社 プラズマドーピング方法
JP4619637B2 (ja) * 2003-09-09 2011-01-26 財団法人国際科学振興財団 半導体装置及びその製造方法
JP4532897B2 (ja) * 2003-12-26 2010-08-25 財団法人国際科学振興財団 プラズマ処理装置、プラズマ処理方法及び製品の製造方法
KR20070115907A (ko) * 2005-03-31 2007-12-06 마쯔시다덴기산교 가부시키가이샤 플라즈마 도핑 방법 및 장치
KR101177867B1 (ko) * 2005-05-12 2012-08-28 파나소닉 주식회사 플라즈마 도핑 방법 및 플라즈마 도핑 장치
JP2007042951A (ja) * 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04319243A (ja) 1991-04-17 1992-11-10 Tokyo Electron Ltd イオン注入装置
JPH05251033A (ja) 1992-03-03 1993-09-28 Tokyo Electron Ltd イオン注入装置
JP2007146034A (ja) 2005-11-29 2007-06-14 Sumitomo Metal Mining Co Ltd 蛍光体薄膜とその成膜方法

Also Published As

Publication number Publication date
US20100167507A1 (en) 2010-07-01
WO2008149643A1 (ja) 2008-12-11
JP2008300687A (ja) 2008-12-11
TW200913019A (en) 2009-03-16

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee