DE69019741T2 - Ionenstrahlkanone. - Google Patents

Ionenstrahlkanone.

Info

Publication number
DE69019741T2
DE69019741T2 DE69019741T DE69019741T DE69019741T2 DE 69019741 T2 DE69019741 T2 DE 69019741T2 DE 69019741 T DE69019741 T DE 69019741T DE 69019741 T DE69019741 T DE 69019741T DE 69019741 T2 DE69019741 T2 DE 69019741T2
Authority
DE
Germany
Prior art keywords
ion ray
cannon
ray cannon
ion
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69019741T
Other languages
English (en)
Other versions
DE69019741D1 (de
Inventor
Mervyn Davis
Gary Proudfoot
Keith Bayliss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordiko Technical Services Ltd
Original Assignee
Nordiko Ltd
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordiko Ltd, UK Atomic Energy Authority filed Critical Nordiko Ltd
Publication of DE69019741D1 publication Critical patent/DE69019741D1/de
Application granted granted Critical
Publication of DE69019741T2 publication Critical patent/DE69019741T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
DE69019741T 1989-03-06 1990-03-06 Ionenstrahlkanone. Expired - Lifetime DE69019741T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898905073A GB8905073D0 (en) 1989-03-06 1989-03-06 Ion gun
PCT/GB1990/000340 WO1990010945A1 (en) 1989-03-06 1990-03-06 Ion gun

Publications (2)

Publication Number Publication Date
DE69019741D1 DE69019741D1 (de) 1995-06-29
DE69019741T2 true DE69019741T2 (de) 1995-09-28

Family

ID=10652817

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019741T Expired - Lifetime DE69019741T2 (de) 1989-03-06 1990-03-06 Ionenstrahlkanone.

Country Status (6)

Country Link
US (1) US5198718A (de)
EP (1) EP0462165B1 (de)
JP (1) JP2648235B2 (de)
DE (1) DE69019741T2 (de)
GB (1) GB8905073D0 (de)
WO (1) WO1990010945A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10317027A1 (de) * 2003-04-11 2004-11-11 Leybold Optics Gmbh Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
DE102004011118A1 (de) * 2004-03-08 2005-10-06 Leybold Optics Gmbh Extraktionselektrode mit Lochblendenmuster für eine Plasmastrahlquelle

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US5525392A (en) * 1992-12-10 1996-06-11 International Business Machines Corporation Magnetic recording medium having a fluorinated polymeric protective layer formed by an ion beam
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
US5874704A (en) * 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
US5731565A (en) 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US5759280A (en) * 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5993594A (en) 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
GB9622127D0 (en) 1996-10-24 1996-12-18 Nordiko Ltd Ion gun
US5969470A (en) * 1996-11-08 1999-10-19 Veeco Instruments, Inc. Charged particle source
US6033585A (en) * 1996-12-20 2000-03-07 Lam Research Corporation Method and apparatus for preventing lightup of gas distribution holes
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6035868A (en) * 1997-03-31 2000-03-14 Lam Research Corporation Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6083363A (en) * 1997-07-02 2000-07-04 Tokyo Electron Limited Apparatus and method for uniform, low-damage anisotropic plasma processing
DE29718954U1 (de) 1997-10-24 1998-01-08 Bader Juergen Vorrichtung zur Überdruckbelüftung
ATE345577T1 (de) * 1998-03-31 2006-12-15 Lam Res Corp Plasma-bearbeitungs-kammer und verfahren zur kontrolle von verunreinigungen
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6545580B2 (en) 1998-09-09 2003-04-08 Veeco Instruments, Inc. Electromagnetic field generator and method of operation
US6464891B1 (en) 1999-03-17 2002-10-15 Veeco Instruments, Inc. Method for repetitive ion beam processing with a carbon containing ion beam
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
US6514378B1 (en) 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DE10058326C1 (de) 2000-11-24 2002-06-13 Astrium Gmbh Induktiv gekoppelte Hochfrequenz-Elektronenquelle mit reduziertem Leistungsbedarf durch elektrostatischen Einschluss von Elektronen
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6634313B2 (en) 2001-02-13 2003-10-21 Applied Materials, Inc. High-frequency electrostatically shielded toroidal plasma and radical source
US6755150B2 (en) 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
GB0113368D0 (en) * 2001-06-01 2001-07-25 Nordiko Ltd Apparatus
US6759807B2 (en) 2002-04-04 2004-07-06 Veeco Instruments, Inc. Multi-grid ion beam source for generating a highly collimated ion beam
DE10215660B4 (de) * 2002-04-09 2008-01-17 Eads Space Transportation Gmbh Hochfrequenz-Elektronenquelle, insbesondere Neutralisator
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
KR101352995B1 (ko) * 2003-02-14 2014-01-21 어플라이드 머티어리얼스, 인코포레이티드 수소-함유 라디칼을 이용한 자연 산화물 세정
JP4052191B2 (ja) * 2003-06-24 2008-02-27 株式会社島津製作所 複合成膜装置およびこれを用いた磁気ヘッドの保護膜形成方法
US20060042752A1 (en) * 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
JP2006079924A (ja) * 2004-09-09 2006-03-23 Tdk Corp イオンビーム照射装置及び当該装置用絶縁スペーサ
US7498592B2 (en) 2006-06-28 2009-03-03 Wisconsin Alumni Research Foundation Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
EP2143125B1 (de) * 2007-03-02 2016-11-30 Nordiko Technical Services Limited Ionenquelle
JP4881908B2 (ja) * 2007-06-19 2012-02-22 昭和電工株式会社 磁気記録媒体の製造方法及び磁気記録再生装置
JP4925132B2 (ja) * 2007-09-13 2012-04-25 公立大学法人首都大学東京 荷電粒子放出装置およびイオンエンジン
JP2010020844A (ja) * 2008-07-10 2010-01-28 Showa Denko Kk 磁気記録媒体の製造方法、磁気記録再生装置、及び磁気記録媒体
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
WO2011011278A1 (en) * 2009-07-20 2011-01-27 Advanced Electron Beams, Inc. Emitter exit window
US8698401B2 (en) * 2010-01-05 2014-04-15 Kaufman & Robinson, Inc. Mitigation of plasma-inductor termination
US8729806B2 (en) * 2010-02-02 2014-05-20 The Regents Of The University Of California RF-driven ion source with a back-streaming electron dump
US9064671B2 (en) * 2012-05-09 2015-06-23 Arcam Ab Method and apparatus for generating electron beams
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
CN106014899B (zh) * 2016-05-10 2017-05-10 中国人民解放军国防科学技术大学 螺旋波等离子体感应式推力器
JP7418331B2 (ja) * 2017-12-15 2024-01-19 インテグリス・インコーポレーテッド プラズマフラッドガン（ｐｆｇ）の動作のためにフッ素含有ガスおよび不活性ガスを使用する方法および組立体
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion
KR102019009B1 (ko) 2019-02-26 2019-09-05 권순영 플라즈마 소스
CN114381702B (zh) * 2021-12-31 2023-01-06 北京航空航天大学 一种新型高能离子束流产生方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1138853A1 (ru) * 1982-02-03 1985-02-07 Институт физики твердого тела АН СССР Высокочастотный источник ионов
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
GB2162365B (en) * 1984-07-26 1989-06-01 Atomic Energy Authority Uk Ion source
JPH0740468B2 (ja) * 1984-12-11 1995-05-01 株式会社日立製作所 高周波プラズマ発生装置
FR2581244B1 (fr) * 1985-04-29 1987-07-10 Centre Nat Rech Scient Source d'ions du type triode a une seule chambre d'ionisation a excitation haute frequence et a confinement magnetique du type multipolaire
JPS61273840A (ja) * 1985-05-28 1986-12-04 Rikagaku Kenkyusho 電子ビ−ム励起イオン照射装置
JPS6263139A (ja) * 1985-09-17 1987-03-19 ▲乗▼田　操 羽根型ロ−タリ−エンジン
GB8522976D0 (en) * 1985-09-17 1985-10-23 Atomic Energy Authority Uk Ion sources
JPS6276137A (ja) * 1985-09-30 1987-04-08 Hitachi Ltd イオン源
JPH0711072B2 (ja) * 1986-04-04 1995-02-08 株式会社日立製作所 イオン源装置
JPS6388740A (ja) * 1986-09-30 1988-04-19 Shimadzu Corp イオン銃
JPS6396840A (ja) * 1986-10-13 1988-04-27 Hitachi Ltd イオン源
US4767931A (en) * 1986-12-17 1988-08-30 Hitachi, Ltd. Ion beam apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10317027A1 (de) * 2003-04-11 2004-11-11 Leybold Optics Gmbh Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
DE102004011118A1 (de) * 2004-03-08 2005-10-06 Leybold Optics Gmbh Extraktionselektrode mit Lochblendenmuster für eine Plasmastrahlquelle
DE102004011118B4 (de) * 2004-03-08 2009-09-24 Leybold Optics Gmbh Extraktionselektrode mit Lochblendenmuster für eine Plasmastrahlquelle

Also Published As

Publication number Publication date
JPH04504025A (ja) 1992-07-16
WO1990010945A1 (en) 1990-09-20
EP0462165A1 (de) 1991-12-27
US5198718A (en) 1993-03-30
DE69019741D1 (de) 1995-06-29
GB8905073D0 (en) 1989-04-19
EP0462165B1 (de) 1995-05-24
JP2648235B2 (ja) 1997-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NORDIKO LTD., HAVANT, HAMPSHIRE, GB

8327 Change in the person/name/address of the patent owner

Owner name: NORDIKO TECHNICAL SERVICES LTD., HAVANT, HAMPS, GB