JP2008263181A5 - - Google Patents
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- Publication number
- JP2008263181A5 JP2008263181A5 JP2008059730A JP2008059730A JP2008263181A5 JP 2008263181 A5 JP2008263181 A5 JP 2008263181A5 JP 2008059730 A JP2008059730 A JP 2008059730A JP 2008059730 A JP2008059730 A JP 2008059730A JP 2008263181 A5 JP2008263181 A5 JP 2008263181A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- semiconductor layer
- semiconductor device
- insulating layer
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
- 239000007789 gas Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910021332 silicide Inorganic materials 0.000 claims 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical group [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021334 nickel silicide Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008059730A JP5301177B2 (ja) | 2007-03-19 | 2008-03-10 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007070421 | 2007-03-19 | ||
| JP2007070421 | 2007-03-19 | ||
| JP2008059730A JP5301177B2 (ja) | 2007-03-19 | 2008-03-10 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008263181A JP2008263181A (ja) | 2008-10-30 |
| JP2008263181A5 true JP2008263181A5 (enExample) | 2011-03-24 |
| JP5301177B2 JP5301177B2 (ja) | 2013-09-25 |
Family
ID=39773810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008059730A Expired - Fee Related JP5301177B2 (ja) | 2007-03-19 | 2008-03-10 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US7791172B2 (enExample) |
| JP (1) | JP5301177B2 (enExample) |
| KR (1) | KR101467389B1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101453829B1 (ko) * | 2007-03-23 | 2014-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조 방법 |
| KR101520284B1 (ko) * | 2007-06-25 | 2015-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| JP2010060262A (ja) * | 2008-08-04 | 2010-03-18 | Sanden Corp | 冷凍回路用樹脂材料 |
| JP5835771B2 (ja) * | 2011-10-21 | 2015-12-24 | 国立大学法人北海道大学 | 論理回路 |
| SG10201803464XA (en) | 2017-06-12 | 2019-01-30 | Samsung Electronics Co Ltd | Semiconductor memory device and method of manufacturing the same |
| JP6563988B2 (ja) * | 2017-08-24 | 2019-08-21 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体記憶装置 |
| JP6623247B2 (ja) * | 2018-04-09 | 2019-12-18 | ウィンボンド エレクトロニクス コーポレーション | フラッシュメモリおよびその製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1997132A (en) | 1930-11-14 | 1935-04-09 | Collorio Felix | Packing core for earth dams |
| US3878549A (en) * | 1970-10-27 | 1975-04-15 | Shumpei Yamazaki | Semiconductor memories |
| JPH07114184B2 (ja) * | 1987-07-27 | 1995-12-06 | 日本電信電話株式会社 | 薄膜形シリコン半導体装置およびその製造方法 |
| US5248630A (en) * | 1987-07-27 | 1993-09-28 | Nippon Telegraph And Telephone Corporation | Thin film silicon semiconductor device and process for producing thereof |
| JPH0613627A (ja) * | 1991-10-08 | 1994-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP3186708B2 (ja) * | 1997-09-11 | 2001-07-11 | 日本電気株式会社 | 半導体装置の製造方法 |
| KR100316707B1 (ko) * | 1999-02-05 | 2001-12-28 | 윤종용 | 모스 트랜지스터 및 그 제조방법 |
| JP4666783B2 (ja) * | 2000-02-01 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5068402B2 (ja) * | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
| US6858480B2 (en) * | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP4071005B2 (ja) * | 2001-01-29 | 2008-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP4993810B2 (ja) * | 2001-02-16 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW541584B (en) * | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
| CN1306599C (zh) * | 2002-03-26 | 2007-03-21 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| JP4360798B2 (ja) * | 2002-11-28 | 2009-11-11 | シャープ株式会社 | 半導体膜およびその製造方法、ならびに半導体装置、その製造方法および半導体製造装置 |
| JP4942950B2 (ja) | 2004-05-28 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7504663B2 (en) * | 2004-05-28 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a floating gate electrode that includes a plurality of particles |
| JP4657016B2 (ja) | 2004-06-14 | 2011-03-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7335556B2 (en) * | 2004-06-14 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| KR100642898B1 (ko) * | 2004-07-21 | 2006-11-03 | 에스티마이크로일렉트로닉스 엔.브이. | 반도체 장치의 트랜지스터 및 그 제조방법 |
| US20060118869A1 (en) * | 2004-12-03 | 2006-06-08 | Je-Hsiung Lan | Thin-film transistors and processes for forming the same |
| KR100699830B1 (ko) * | 2004-12-16 | 2007-03-27 | 삼성전자주식회사 | 이레이즈 효율을 개선하는 비휘발성 메모리 소자 및 제조방법 |
| KR100609587B1 (ko) * | 2004-12-30 | 2006-08-08 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 장치의 제조방법 |
| US7968932B2 (en) * | 2005-12-26 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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2008
- 2008-02-26 US US12/037,671 patent/US7791172B2/en not_active Expired - Fee Related
- 2008-03-10 KR KR1020080021839A patent/KR101467389B1/ko not_active Expired - Fee Related
- 2008-03-10 JP JP2008059730A patent/JP5301177B2/ja not_active Expired - Fee Related
-
2010
- 2010-08-24 US US12/861,977 patent/US8072017B2/en not_active Expired - Fee Related
-
2011
- 2011-11-04 US US13/288,995 patent/US8395201B2/en not_active Expired - Fee Related