JP2008235868A - Surface mount light-emitting diode and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface mount light-emitting diode having improved heat dissipation, reliability, and productivity. <P>SOLUTION: The surface mount light-emitting diode 10 has: a metal base member 2; a semiconductor light-emitting element 1 having a backside fixedly bonded on the base member 2; and a metallic reflector 6 bonded on the base member 2 with a heat conduction type adhesive sheet 5 interposed therebetween, to surround the semiconductor light-emitting element 1. Heat generated from the semiconductor light-emitting element 1 is transferred to the reflector 6 via the base member 2 and the heat conduction type adhesive sheet 5, and then is radiated to the outside from the reflector 6. The metallic reflector 6 can efficiently radiate the heat generated from the semiconductor light-emitting element 1 to the outside. A cutting margin provided for the reflector 6 facilitates a dicing process in dicing along the cutting margin, which improves productivity without reducing yields. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a surface-mounted light emitting diode, and more particularly to a surface-mounted light emitting diode that places importance on heat dissipation, reliability, and productivity, and a method for manufacturing the same.

  A semiconductor light emitting device is a device in which a PN junction is formed on a compound semiconductor wafer such as AlInGaP or GaN, and light emission of visible light or near infrared light is obtained through forward current thereto. In recent years, display, communication, and measurement have been started. Widely applied to control. Furthermore, the range of application has been expanded to the field for vehicles where heat dissipation and reliability are particularly important. Surface mount light emitting diodes that meet these requirements have been developed.

  FIG. 16 is a schematic cross-sectional view showing an example of the configuration of a conventional surface-mounted light emitting diode. As shown in FIG. 16, the surface-mounted light-emitting diode 100 has a semiconductor light-emitting element 103 mounted on a base 101 having electrodes 102, and each electrode of the semiconductor light-emitting element 103 is connected to each base 101 by a conductive wire 104 by wire bonding. The structure is such that a mold member 105 is provided in the base 101 connected to the electrode 102.

  Heat is generated when the semiconductor light-emitting element (LED chip) mounted on the surface-mounted light-emitting diode emits light, but the amount of heat generated increases as the current flowing through the LED chip increases. In general, the higher the temperature of the LED chip, the lower the luminous efficiency of the LED chip, and the more the light deterioration becomes. That is, even if a large current is passed, it will not be bright effectively, and the life of the LED chip will be shortened. Therefore, by effectively releasing the heat generated from the LED chip to the outside and lowering the temperature, it is possible to provide an LED chip with good luminous efficiency and good life characteristics even at high currents.

The conventional semiconductor light-emitting devices with improved heat dissipation effects as described above are described in, for example, Patent Documents 1 to 5. In Patent Documents 1 and 2, the heat dissipation is improved by increasing the surface area of the lead frame, and in Patent Documents 3 to 5, the substrate material is a metal having a higher thermal conductivity than the resin. I am trying.
Japanese Patent Laid-Open No. 11-46018 JP 2002-222998 A JP 2000-58924 A JP 2000-77725 A JP 2000-216443 A

  However, in the conventional surface-mounted light-emitting diode 100 shown in FIG. 16, the heat radiation from the semiconductor light-emitting element 103 can be received only by the electrode 102, so that the heat radiation is not sufficient. In addition, the reliability was insufficient under severe conditions of environmental resistance (temperature, vibration, etc.) for in-vehicle use. In addition, in order to dispose the phosphor (substance) in the reflector for reflecting the light generated by the semiconductor light emitting element 103, it is necessary to include the phosphor in the mold member 105 that covers the semiconductor light emitting element 103. However, the resin containing the phosphor deteriorates when exposed to a high temperature due to heat generation of the semiconductor light emitting element in the vicinity of the semiconductor light emitting element 103, and thus the lifetime as a light source is shortened.

  Therefore, a main object of the present invention is to provide a surface mount type light emitting diode excellent in heat dissipation, reliability and productivity, and a method for manufacturing the same.

  A surface-mount light emitting diode according to the present invention includes a metal base member, a semiconductor light emitting element whose back surface is adhesively fixed on the base member, and an adhesive sheet having an insulating property on the base member so as to surround the semiconductor light emitting element And a metallic reflector joined together.

  In this case, the heat generated from the semiconductor light emitting element is conducted to the reflector through the base member and the adhesive sheet, and is radiated from the reflector to the outside. Part of the heat is radiated to the outside through the base member. Since both the base member and the reflector are made of metal, the heat generated from the semiconductor light emitting element can be efficiently radiated to the outside, and the light generated from the semiconductor light emitting element can be efficiently emitted to the outside. The base member and the reflector may be formed by combining a plurality of metals, for example, another metal is laminated on the surface of the metal material by plating, but can be easily manufactured if formed as a single body. It is more preferable because productivity can be improved. When formed as a single body, the material of the reflector is not limited to a single metal but may be an alloy.

  Further, it is desirable that a convex portion having a width smaller than the width of the outer peripheral surface is formed on the outer peripheral surface of the reflector. Since the reflector is made of metal, dicing becomes difficult if the reflector is provided thick. Therefore, in the process of forming the reflector from the plate material, if a region thinner than the thickness of the plate material is provided as a cutting margin, and dicing along the cutting margin, dicing can be performed more easily, Productivity can be improved without reducing yield. The shape of the margin after dicing is the convex portion. Furthermore, since the surface area of a reflector will increase if the convex part is formed, it can thermally radiate more efficiently.

  A plurality of convex portions may be formed on the outer peripheral surface of the reflector. In this case, since heat dissipation from the reflector to the outside is further promoted, heat dissipation can be further improved.

  The base member is preferably made of at least one of Al, Cu, Fe, Mg, or a composite thereof. Since these materials have high thermal conductivity, it is possible to provide a base member with good heat dissipation to the outside of the heat generated from the semiconductor light emitting element. Also, these materials are easy to manufacture because of their good workability.

  The reflector is preferably made of at least one of Al, Cu, Fe, and Mg, or a composite thereof. Since these materials have high thermal conductivity, it is possible to provide a reflector with good heat dissipation to the outside of the heat generated from the semiconductor light emitting element. Also, these materials are easy to manufacture because of their good workability.

  Further, it is desirable that the surface mount type light emitting diode is provided with a plurality of semiconductor light emitting elements. In this case, a high output light source can be obtained. For example, if one semiconductor light emitting element such as a blue, green, and red LED chip is mounted, a light source capable of toning such as white can be obtained by adjusting current distribution to each LED chip. it can. A plurality of each of the LED chips of each color may be mounted.

  The base member preferably includes an insulating member that electrically insulates the portion of the base member where the semiconductor light emitting element is bonded and fixed from the portion of the base member where the reflector is joined. In this case, in order to electrically insulate the semiconductor light emitting element and the portion where the reflector is bonded in the base member, the electrode of the semiconductor light emitting element and the portion where the reflector of the metal base member is bonded Electrical connection can supply current to the semiconductor light emitting element. That is, by electrically connecting the semiconductor light emitting element and the portion of the base member to which the reflector is joined, a circuit for causing the surface mounted light emitting diode to emit light can be formed.

  The adhesive sheet is preferably made of at least one of thermally conductive silicone, thermally conductive acrylic, and thermally conductive epoxy, or a composite (multilayer body) obtained by stacking them in layers. Since these materials have high thermal conductivity (for example, 1.0 W / m · K or more), heat generated from the semiconductor light emitting element and dissipated in the translucent resin can be dissipated more efficiently. Here, the heat conductive adhesive sheet is filled with a heat conductive filler, and can be configured to use silicon oxide, aluminum oxide, magnesium oxide, aluminum hydroxide, or the like having good heat conductivity as a filler. In addition, as a heat conductive adhesive sheet, a structure in which a heat conductive adhesive, an aluminum foil, and a heat conductive adhesive are sequentially laminated, and a structure in which a heat conductive adhesive, a heat conductive compound, and a heat conductive adhesive are sequentially laminated Conceivable.

  Further, it is desirable that the inner peripheral surface of the reflector is formed to be a part of any one of a conical surface, a spherical surface, and a paraboloid. In this case, light generated from the semiconductor light emitting element can be efficiently emitted.

  In addition, it is desirable that the base member is subjected to gold plating or silver plating at least on the surface to which the semiconductor light emitting element is bonded and fixed. In this case, bonding for bonding and fixing the semiconductor light emitting element to the base member is good. Moreover, silver plating has a high light reflectance, and the external extraction efficiency of the light radiated | emitted from the semiconductor light-emitting element to the base member improves.

  Further, it is desirable that the surface of the base member is subjected to a surface treatment of gold plating or silver plating to form a conductor layer electrically connected to the semiconductor light emitting element. In this case, alteration of the conductor layer can be suppressed.

  Further, it is desirable that a translucent resin is provided on the base member so as to cover the semiconductor light emitting element and not to contact the reflector. In this case, the translucent resin that covers the semiconductor light emitting element and shields it from the outside air to protect the circuit is not in contact with the reflector. Therefore, there is no problem that the translucent resin is expanded and contracted due to heat conduction from the semiconductor light emitting element to the translucent resin, and the translucent resin is not peeled off from the reflector. Therefore, there is no problem that the translucent resin is peeled off from the reflector due to expansion and contraction of the reflector, so that the failure rate of the surface mount light emitting diode can be reduced and the reliability can be improved. Further, the base member and the reflector can be made of materials having different thermal expansion coefficients.

  The translucent resin preferably contains a phosphor that is excited by light emitted from the semiconductor light emitting element and emits light having a longer wavelength than the light emitted from the semiconductor light emitting element. For example, the semiconductor light emitting device is a blue semiconductor light emitting device made of a gallium nitride compound semiconductor, and the translucent resin is a phosphor that emits yellow light when excited by light emitted from the blue semiconductor light emitting device. The white light source can be obtained according to this configuration. The semiconductor light emitting element may be a ZnO (zinc oxide) based compound semiconductor or a semiconductor light emitting element that emits near-ultraviolet light.

  Moreover, the adhesion surface with the base member of the reflector may have irregularities or may have a sawtooth shape. In this case, heat conduction from the adhesive sheet to the reflector is improved. Therefore, the heat generated by the semiconductor light emitting element can be radiated to the outside more efficiently. Moreover, the joining strength of the reflector can be improved.

  The method for manufacturing a surface-mounted light-emitting diode according to the present invention includes a step of sequentially forming an insulating layer and a conductor layer on a part of the surface of a metal base member assembly. In addition, the method includes a step of forming a plurality of through-hole portions and cutting grooves in a metallic reflector material. Moreover, the process of joining a reflector raw material through a heat conductive adhesive sheet is provided on a base member assembly. Further, the method includes a step of bonding and fixing the plurality of semiconductor light emitting elements on the base member aggregate inside the plurality of through-hole portions. Moreover, the process of electrically connecting a semiconductor light-emitting device and a conductor layer is provided. Further, the method includes a step of dicing the reflector material and the base member aggregate along the groove to divide the surface-mounted light emitting diode having a single base member and reflector.

  In this case, since the base member and the reflector are made of metal, the heat generated from the semiconductor light emitting element can be efficiently radiated to the outside, and the light generated from the semiconductor light emitting element can be efficiently emitted to the outside. it can. If the reflector made of metal is thick, dicing becomes difficult, but dicing becomes easier by forming a groove for cutting in the reflector material, which may reduce the yield of surface-mounted light-emitting diodes. Productivity can be improved.

  Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
1 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 1 of the present invention. As shown in FIG. 1, the surface-mounted light-emitting diode 10 includes a semiconductor light-emitting element 1, a base member 2, an insulating layer 3, a conductor layer 4, a heat conductive adhesive sheet 5, a reflector 6 having a convex portion 9, and a phosphor-containing material. It is composed of a translucent resin 7 and a conductive wire 8.

  The base member 2 is made of aluminum (Al) with good thermal conductivity and is formed in a plate shape. The back surface of the semiconductor light emitting element 1 is bonded and fixed on the base member 2. An insulating layer 3 is laminated on a part of the surface of the base member 2, and a conductor layer 4 serving as a metal wiring pattern conductor is laminated on the surface of the insulating layer 3. A heat conductive adhesive sheet 5 having insulating properties is laminated on a partial region of the conductor layer 4, and a reflector 6 is provided on the heat conductive adhesive sheet 5. That is, as shown in FIG. 1, the reflector 6 has a heat conductive adhesive sheet 5 interposed between the upper surface, which is the surface of the base member 2 to which the semiconductor light emitting element 1 is bonded and fixed, so as to surround the semiconductor light emitting element 1. Are joined. The base member 2 to which the semiconductor light emitting element 1 is bonded and fixed and the conductor layer 4 to which the reflector 6 is joined are electrically insulated by the insulating layer 3. The electrode of the semiconductor light emitting element 1 is electrically connected to the conductor layer 4 by a conductive wire 8. The conductor layer 4 is a circuit for causing the surface-mounted light-emitting diode 10 to emit light if it functions as an external connection terminal portion to supply current to the semiconductor light-emitting element 1 from the outside, for example, on the lower surface side opposite to the upper surface. Can be formed.

  The reflector 6 is made of aluminum (Al), and is formed in a mortar shape having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 3 mm, for example. Moreover, the reflector 6 has the convex part 9 which is the remainder of the cutting margin used in order to make dicing easy in an outer peripheral surface. The convex portion 9 has a width smaller than the width of the outer peripheral surface of the reflector 6. The width indicates a dimension in a direction perpendicular to the upper surface of the base member 2 (the surface on which the semiconductor light emitting element 1 is bonded and fixed). That is, in the cross section of the reflector 6, as shown in FIG. 1, the dimension of the convex portion 9 in the thickness direction of the reflector 6 (vertical direction in FIG. 1) is smaller than the thickness of the reflector 6. The inner peripheral wall of the reflector 6 is mirror finished. Since the reflector 6 has a mortar shape and its inner peripheral wall is mirror-finished, the light generated from the semiconductor light emitting element 1 is reflected by the reflector 6 and efficiently emitted to the outside. A part of the light generated from the semiconductor light emitting element 1 is emitted toward the base member 2, but since the base member 2 is also made of metal, the light is reflected on the upper surface of the base member 2, and the light is exposed to the outside. It is released efficiently. That is, the amount of light leaking from the lower surface side of the base member 2 is extremely small.

  In addition, the semiconductor light emitting element 1 is mounted inside the reflector 6 on the upper surface of the base member 2, and the semiconductor light emitting element 1 is covered with a translucent resin 7 made of silicone resin. The translucent resin 7 contains and holds a phosphor that emits yellow light when excited by light from the semiconductor light emitting device.

  The semiconductor light emitting element 1 is a blue semiconductor light emitting element made of a gallium nitride compound semiconductor, and is formed in a chip shape having P and N electrodes on the same surface (upper surface side in FIG. 1). When the semiconductor light emitting element 1 emits light, blue light is emitted. At this time, a white color is obtained by mixing the yellow light obtained by absorbing the blue light in the phosphor dispersed and held in the translucent resin 7 and the blue light not absorbed by the phosphor. Can be obtained. If a plurality of the semiconductor light emitting elements 1 are mounted, a higher output light source can be obtained. Here, the translucent resin 7 may be formed in a convex lens shape that rises toward the side away from the surface of the base member 2. Here, blue light refers to light having an emission peak wavelength of 350 nm or more and 490 nm or less. The yellow light means light having a longer wavelength than the blue light having a peak emission wavelength of 550 nm to 650 nm.

  Here, the translucent resin 7 and the reflector 6 are not in contact. Therefore, the heat generated from the semiconductor light-emitting element 1 causes expansion and contraction of the translucent resin 7, so that the problem that the translucent resin 7 is peeled off from the reflector 6 does not occur. The rate can be reduced and the reliability can be improved. Moreover, the base member 2 and the reflector 6 can be comprised with the material from which a thermal expansion coefficient differs.

  FIG. 2 is a schematic diagram showing conduction of heat generated by the semiconductor light emitting device. In FIG. 2, arrows a, b, c, and d indicate heat conduction. As shown in FIG. 2, the heat generated by the semiconductor light emitting device 1 is conducted to the base member 2 as indicated by arrows a and b. Part of the heat conducted to the base member 2 is radiated to the outside through the base member, and part of the heat is conducted to the reflector 6 through the heat conductive adhesive sheet 5 as indicated by arrows b and c. The heat conducted to the reflector 6 is radiated to the outside as indicated by an arrow d.

  Since the base member 2 and the reflector 6 are made of Al and have high thermal conductivity, the surface-mounted light-emitting diode 10 with good heat dissipation that can efficiently radiate the heat generated from the semiconductor light-emitting element 1 to the outside is configured. can do. Since the convex portion 9 is formed on the reflector 6 and the surface area of the reflector 6 is increased, heat can be radiated more efficiently. In addition, since the reflector 6 is joined to the base member 2 with the heat conductive adhesive sheet 5 interposed, heat is easily conducted to the Al reflector 6, and the heat generated from the semiconductor light emitting element 1 is more efficiently externalized. Can dissipate heat. Needless to say, a thermally conductive adhesive sheet 5 having good thermal conductivity is used. For example, the thermally conductive adhesive sheet 5 is any one of thermally conductive silicone, thermally conductive acrylic, thermally conductive epoxy, or the like. A composite body (multilayer body) obtained by stacking layers in layers can be used.

  Since heat generated from the semiconductor light emitting element 1 can be efficiently radiated to the outside, the temperature of the semiconductor light emitting element 1 is lowered, and the temperature of the translucent resin 7 covering the semiconductor light emitting element 1 is also kept low. Therefore, the deterioration of the translucent resin 7 due to the phosphors dispersed and held in the translucent resin 7 being exposed to the high temperature of the semiconductor light emitting element 1 can be suppressed. As a result, the life of the surface-mounted light emitting diode 10 can be extended. In addition, color variations generated from the surface-mounted light emitting diode 10 can be suppressed.

  As phosphors dispersed and held in the translucent resin 7, gadolinium and cerium are added, YAG type (yttrium aluminum garnet), BOS type (Barium Ortho-Silicate), TAG type (terbium aluminum garnet). ) At least one kind. In order to obtain white light, the translucent resin 7 needs to contain a phosphor. However, as the surface-mounted light-emitting diode 10, only the translucent resin 7 not containing the phosphor emits semiconductor light. Needless to say, the element 1 may be sealed. The translucent resin 7 is desirably at least one or a composite of silicone resin, epoxy resin, acrylic resin, fluorine resin, polyimide resin, silicone-modified epoxy resin, or the like. Since a part of the heat generated from the semiconductor light emitting element 1 is radiated to the outside through the translucent resin 7, the translucent resin 7 has good heat dissipation (for example, thermal conductivity of 0.3 W / mK or more). More preferred.

  In addition, the light generated from the semiconductor light emitting element 1 is efficiently emitted to the outside because the reflector 6 is made of metal (Al). Since the reflector 6 is made of Al, the inner peripheral surface of the reflector 6 does not require Al deposition, metal plating, or the like for increasing the reflectivity as a reflective layer, so that the manufacture is facilitated. Further, since the base member 2 and the reflector 6 are produced simply by bonding them with the heat conductive adhesive sheet 5, the production is facilitated.

  Next, a manufacturing procedure of the surface mount type light emitting diode 10 shown in FIG. 1 will be described. FIG. 3 is a flowchart showing a manufacturing process of the surface-mounted light emitting diode. 4 to 9 are diagrams for explaining each step of the method for manufacturing the surface-mounted light-emitting diode shown in FIG. As shown in FIG. 3, first, in step (S10), plate-like aluminum having a thickness of 0.5 mm is prepared as a base member assembly. The base member assembly is embossed in the direction of being crushed from above using an embossing mold, and the upper surface, which is the surface to which the semiconductor light emitting element is bonded and fixed in a later step, and the lower surface opposite to the upper surface, Form a recess. Here, the base member aggregate is a material formed into the base member 2 by dicing (cutting), and as will be described later, each of the semiconductor light emitting element 1 for bonding and fixing, wire bonding, and resin sealing After the process, the base member 2 is cut and separated.

  Next, in step (S20), as shown in FIG. 4, a silicon dioxide layer (thickness 0) is formed as the insulating layer 3 so as to cover the surface on the side surface of the plate-like base member aggregate and the concave portion. .1 mm) is laminated by a CVD (Chemical Vapor Deposition) method. Subsequently, in the step (S30), a copper thin film (thickness: 0.035 mm) as a metal wiring pattern conductor is formed on the surface of the insulating layer 3 by electroplating, and further a silver thin film (thickness) by using a silver plating method. The conductor layer 4 having a thickness of 0.005 mm is laminated. Since the surface of the conductor layer 4 is silver-plated and covered with a silver thin film, the alteration of the conductor layer 4 is suppressed. Next, in step (S40), as shown in FIG. 5, on the upper surface side of the base member assembly, sheet-like thermally conductive acrylic (thickness 0.05 mm) as the thermally conductive adhesive sheet 5 is formed on the conductor layer 4. Affix.

  On the other hand, a reflector material is formed in steps (S110) to (S140). First, in a process (S110), as shown to Fig.9 (a), the aluminum plate (thickness 1mm) as the board | plate material 11 is prepared. FIG. 9A is a side view of the plate material 11. In practice, a material that is long in the direction perpendicular to the paper surface is prepared as the plate material 11. Next, in the step (S120), the through-hole portion 13 and the cutting groove 12 are formed in the aluminum plate by a double-side embossing method in the direction of crushing from above using an embossing die. FIG. 9B is a cross-sectional view after embossing. Here, the through-hole portion 13 is formed so as to be a part of a conical surface, and in the cross section shown in FIG. 9B, the diameter of the through-hole portion 13 decreases from the upper side to the lower side in the figure. It has become. The cutting groove 12 is an area thinner than the plate material 11. Next, in step (S130), dicing is performed along the groove for cutting 12. In this way, a plate-shaped reflector material is completed in the step (S140). FIG. 9C is a cross-sectional view of the reflector material. The reflector material has a plate shape that is long in the direction perpendicular to the paper surface of FIG. 9 (c), and a plurality of members formed on the reflector 6 by being diced in a later process along the direction are combined. Is.

  Next, in a process (S50), as shown in FIG. 6, a reflector raw material is joined on the heat conductive adhesive sheet 5. As shown in FIG. At this time, the reflector material has a plate shape that is long in the direction perpendicular to the paper surface of FIG. 6, and the convex portion 9 as the remainder of the cut margin after being cut along the cutting groove 12 in the dicing in the step (S130). Have.

  Next, in step (S60), as shown in FIG. 7, the semiconductor light emitting element 1 is bonded and fixed (mounted) to the upper surface of the base member 2 with an epoxy resin as a transparent resin. Since the semiconductor light emitting element 1 is bonded and fixed to the inside of the through-hole portion 13 formed so as to be a part of the conical surface of the reflector material, a part of the conical surface becomes the inner peripheral surface of the reflector 6. Light generated from the semiconductor light emitting element 1 can be efficiently emitted to the outside. Subsequently, in step (S <b> 70), each electrode of the semiconductor light emitting element 1 and a corresponding bonding pad of the conductor layer 4 are connected using a conductive wire (lead wire) 8 by wire bonding. Thereafter, in step (S80), as shown in FIG. 8, translucent resin 7 (for example, silicone resin) containing BOS yellow phosphor is filled into reflector 6 using a dispenser.

  Next, in the step (S90), the cutting groove formed in the reflector material (in the reflector material long in the direction perpendicular to the paper surface shown in FIG. 8, the cutting groove is formed on a cross section different from the cross section of FIG. Therefore, the reflector material and the base member assembly are diced along the cutting grooves (not shown). Since a cutting groove is formed in the metal reflector material and dicing is performed along the cutting groove, the cutting width of the reflector material is small, and dicing can be easily performed. Therefore, since the occurrence of defective products in the dicing process can be suppressed, the yield of the surface-mounted light emitting diode 10 is not lowered, and the productivity can be improved. In this way, in the step (S100), the single surface-mounted light emitting diode 10 shown in FIG. 1 having the single base member 2 and the reflector 6 is manufactured.

  In the first embodiment, the semiconductor light emitting device 1 is formed in a chip shape having P and N electrodes on the same surface. However, the present invention is not limited to this structure, and is formed on a chip having P and N electrodes on both sides. It may be a structure. In the case where the semiconductor light emitting element 1 has an electrode on the back surface side on the side in contact with the base member 2, the surface treatment of gold plating or silver plating is performed on the surface of the base member 2 to which the semiconductor light emitting element 1 is bonded and fixed. If applied, the bonding for fixing the semiconductor light emitting element 1 to the base member 2 will be good. In the case of silver plating, the light reflectance is high and the efficiency of extracting light outside the light is improved. The substrate of the semiconductor light emitting element 1 is an insulator. Needless to say, the semiconductor light emitting device 1 is not limited to a gallium nitride-based compound semiconductor, and may use a ZnO (zinc oxide) -based compound semiconductor, an InGaAlP-based, or an AlGaAs-based compound semiconductor. In any of these structures, the semiconductor light emitting element 1 can be mounted on the base member 2.

  Furthermore, a plurality of semiconductor light emitting elements 1 can be mounted on the base member 2. If a plurality of semiconductor light emitting elements 1 of the same color are mounted, a high output light source can be obtained. In addition, for example, if one or the same number of semiconductor light emitting elements such as blue, green, and red LED chips are mounted, a light source capable of toning such as white by adjusting current distribution to each LED chip Needless to say you can get

(Embodiment 2)
FIG. 10 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light-emitting diode according to Embodiment 2 of the present invention. FIG. 11 is a perspective view of the surface-mounted light-emitting diode shown in FIG. The surface-mounted light-emitting diode 20 according to the second embodiment and the surface-mounted light-emitting diode 10 according to the first embodiment described above basically have the same configuration. However, the second embodiment is different from the first embodiment in that the structure of the insulating layer 3 and the conductor layer 4 is configured as shown in FIG.

  Specifically, the reflector 6 constituting the surface-mounted light-emitting diode 20 is formed in an elliptical shape with a through hole having a major axis of 2 mm and a minor axis of 0.8 mm, for example. On the surface of the reflector 6 other than the surface in contact with the base member 2 with the thermally conductive adhesive sheet 5 interposed therebetween, the conductor layer 4 is laminated with the insulating layer 3 interposed therebetween. The semiconductor light emitting element 1 and the conductor layer 4 are electrically connected by a conductive wire 8. A current for causing the semiconductor light emitting element 1 to emit light from the outside is supplied to the semiconductor light emitting element 1 through the external connection terminal portions 81 and 82 connected to the conductor layer 4. Since the other configuration of the surface-mounted light-emitting diode 20 is as described in the first embodiment, the description thereof will not be repeated.

  Next, a manufacturing procedure of the surface mount type light emitting diode 20 shown in FIG. 10 will be described. FIG. 12 is a flowchart showing manufacturing steps of the surface-mounted light-emitting diode according to the second embodiment. As shown in FIG. 12, first, in step (S10), plate-like aluminum having a thickness of 0.5 mm is prepared as a base member assembly. Subsequently, in step (S20), a sheet-like thermally conductive silicone (thickness 0.05 mm) as the thermally conductive adhesive sheet 5 is pasted on the upper surface of the base member assembly. On the other hand, a reflector material is formed in steps (S110) to (S140). The steps (S110) to (S140) for forming the reflector material are as described in the first embodiment.

  Next, in a process (S30), a reflector raw material is joined on the heat conductive adhesive sheet 5. FIG. Next, in step (S40), a silicon dioxide layer (thickness: 0.1 mm) as the insulating layer 3 is laminated on the upper surface of the reflector material by a CVD (Chemical Vapor Deposition) method. Next, in the step (S50), a copper thin film (thickness: 0.035 mm) as a metal wiring pattern conductor is formed on the surface of the insulating layer 3 using electroplating, and further a silver thin film (thickness) using a silver plating method. The conductor layer 4 having a thickness of 0.005 mm is laminated. About the process after a process (S60), since it is as having demonstrated in Embodiment 1, the description is not repeated.

  In the description of the first to second embodiments, an example is described in which the base member 2 and the reflector 6 are formed using a single aluminum plate as a raw material. A plurality of metals may be combined and formed, for example, by laminating metals by plating. The metal material forming the base member 2 and the reflector 6 is not limited to Al, and Cu, Fe, Mg, etc. excellent in heat dissipation and workability can be used, or a composite thereof can be used. However, it is more preferable to form the base member 2 and the reflector 6 as a single metal, because it can be easily manufactured as shown in FIG. 9 and productivity can be improved. When formed as a single body, the material of the base member 2 and the reflector 6 is not limited to a single metal but may be an alloy.

  With respect to the shape of the reflector 6, as shown in FIG. 13, for example, a portion such as the convex portion 9 excluding the inner peripheral surface that is the light reflecting surface of the reflector 6 is provided in a concavo-convex shape so as to have a shape like a radiation fin You can also. In this way, heat dissipation from the reflector 6 to the outside is further promoted, so that heat dissipation can be further improved. The light reflecting surface of the reflector 6 is not limited to a conical surface, and the reflector 6 may be formed so as to be, for example, a spherical surface or a part of a paraboloid. In this case, the light generated from the semiconductor light emitting element 1 is efficiently used. Can release well.

  The insulating layer 3 is not limited to silicon dioxide, and can be configured, for example, by adhering acrylic rubber, epoxy, silicone, or the like to the base member 2 and the conductor layer 4 with a heat conductive adhesive material interposed therebetween.

  The heat conductive adhesive sheet 5 may be in contact with the translucent resin 7. For example, in the surface-mounted light emitting diode 10 shown in FIG. 1, the heat conductive adhesive sheet 5 is formed on the inner side of the inner peripheral wall of the reflector 6 except for the region where the semiconductor light emitting element 1 is wire bonded to the conductor layer 4. If it is set as a structure, the heat conductive adhesive sheet 5 can be made to contact the translucent resin 7. FIG. In this case, the heat dissipated in the translucent resin 7 can be conducted to the reflector 6 through the heat conductive adhesive sheet 5. Therefore, the heat generated by the semiconductor light emitting element 1 can be radiated to the outside more efficiently.

  Furthermore, you may form the reflector 6 in the shape where the area which the heat conductive adhesive sheet 5 and the reflector 6 joins increases. For example, the reflector 6 can be formed into a shape having irregularities shown in FIG. 14 or a shape having fine sawtooth-like notches shown in FIG. 15 at the joint portion with the heat conductive adhesive sheet 5. If it does in this way, the heat conduction from the heat conductive adhesive sheet 5 to the reflector 6 will improve. Therefore, the heat generated by the semiconductor light emitting element 1 can be radiated to the outside more efficiently. Moreover, the joining strength of the reflector 6 can be improved.

  The embodiment disclosed this time is to be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a schematic diagram which shows a part of cross-sectional structure of the surface mounted light emitting diode according to the first embodiment of the present invention. It is a schematic diagram which shows conduction of the heat | fever which a semiconductor light-emitting device generate | occur | produces. It is a flowchart which shows the manufacturing process of a surface mount type light emitting diode. It is a schematic diagram which shows a conductor layer formation process. It is a schematic diagram which shows an adhesive sheet sticking process. It is a schematic diagram which shows a reflector raw material joining process. It is a schematic diagram which shows a semiconductor light emitting element adhesion | attachment fixing process. It is a schematic diagram which shows a translucent resin filling process. It is a schematic diagram which shows the process of shape | molding a reflector raw material. FIG. 4 is a schematic diagram showing a part of a cross-sectional structure of a surface-mounted light emitting diode according to a second embodiment. It is a perspective view of the surface mount type light emitting diode shown in FIG. 6 is a flowchart showing manufacturing steps of the surface-mounted light-emitting diode according to the second embodiment. It is a schematic diagram which shows a part of cross-sectional structure of the surface mount type light emitting diode which concerns on the modification of the shape of a reflector. It is a schematic diagram which shows a part of cross-sectional structure of the surface mount type light emitting diode which concerns on the other modification of the shape of a reflector. It is a schematic diagram which shows a part of cross-sectional structure of the surface mount type light emitting diode which concerns on the further another modification of the shape of a reflector. It is a cross-sectional schematic diagram which shows the example of a structure of the conventional surface mount type light emitting diode.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device, 2 Base member, 3 Insulating layer, 4 Conductor layer, 5 Thermal conductive adhesive sheet, 6 Reflector, 7 Translucent resin, 8 Conductive wire, 9 Convex part, 10, 20 Surface mount type light emitting diode, DESCRIPTION OF SYMBOLS 11 Board | plate material, 12 Cutting groove, 13 Through-hole part, 81,82 External connection terminal part, 100 Surface mount type light emitting diode, 101 Base | substrate, 102 Electrode, 103
Semiconductor light emitting element, 104 conductive wire, 105 mold member.

Claims (17)

A metal base member;
A semiconductor light emitting element having a back surface bonded and fixed on the base member;
A surface-mounted light-emitting diode, comprising: a metal reflector bonded to the base member with an insulating adhesive sheet interposed so as to surround the semiconductor light-emitting element.   The surface-mount light-emitting diode according to claim 1, wherein a convex portion having a width smaller than a width of the outer peripheral surface is formed on the outer peripheral surface of the reflector.   The surface-mount light-emitting diode according to claim 2, wherein a plurality of the convex portions are formed.   The surface-mount light-emitting diode according to claim 1, wherein the base member is made of at least one of Al, Cu, Fe, and Mg or a composite thereof.   The surface-mounted light-emitting diode according to claim 1, wherein the reflector is made of at least one of Al, Cu, Fe, and Mg, or a composite thereof.   The surface-mount light-emitting diode according to claim 1, comprising a plurality of the semiconductor light-emitting elements.   The base member includes an insulating member that electrically insulates a portion of the base member to which the semiconductor light emitting element is bonded and fixed from a portion of the base member to which the reflector is bonded. A surface-mounted light-emitting diode according to 1.   2. The surface-mount light-emitting diode according to claim 1, wherein the adhesive sheet is made of at least one of thermally conductive silicone, thermally conductive acrylic, and thermally conductive epoxy, or a composite thereof.   2. The surface-mount light-emitting diode according to claim 1, wherein an inner peripheral surface of the reflector is formed to be a part of any one of a conical surface, a spherical surface, and a paraboloid.   The surface-mount light-emitting diode according to claim 1, wherein the base member is subjected to a surface treatment of gold plating or silver plating at least on a surface to which the semiconductor light emitting element is bonded and fixed.   2. The surface-mount light-emitting diode according to claim 1, wherein a surface of the base member is subjected to a surface treatment of gold plating or silver plating to form a conductor layer electrically connected to the semiconductor light-emitting element.   The surface-mount light emitting diode according to claim 1, wherein a translucent resin is provided on the base member so as to cover the semiconductor light emitting element and not to contact the reflector. On the base member, a translucent resin is provided so as to cover the semiconductor light emitting element and not to contact the reflector,
2. The surface-mounted light-emitting diode according to claim 1, wherein the translucent resin contains a phosphor that is excited by light emitted from the semiconductor light-emitting element and emits light having a longer wavelength than the emitted light. . The semiconductor light emitting device is a blue semiconductor light emitting device made of a gallium nitride compound semiconductor,
On the base member, a translucent resin is provided so as to cover the blue semiconductor light emitting element and not to contact the reflector,
The surface-mount light-emitting diode according to claim 1, wherein the translucent resin contains a phosphor that emits yellow light when excited by light emitted from the blue semiconductor light-emitting element.   The surface-mounted light-emitting diode according to claim 1, wherein an adhesive surface of the reflector with the base member has irregularities.   The surface-mount light-emitting diode according to claim 1, wherein an adhesive surface of the reflector with the base member has a sawtooth shape. A step of sequentially forming an insulating layer and a conductor layer on a part of the surface of the metal base member assembly;
Forming a plurality of through holes and a cutting groove in a metal reflector material;
On the base member assembly, a step of joining the reflector material with a heat conductive adhesive sheet interposed therebetween;
Adhering and fixing a plurality of semiconductor light emitting elements on the base member assembly inside the plurality of through-hole portions;
Electrically connecting the semiconductor light emitting element and the conductor layer;
And a step of dicing the reflector material and the base member aggregate along the groove to divide the reflector material into surface-mounted light-emitting diodes having a single base member and reflector.

Images