CN101252164B - Surface mounting type light emitting diode and method for manufacturing the same - Google Patents
Surface mounting type light emitting diode and method for manufacturing the same Download PDFInfo
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- CN101252164B CN101252164B CN 200810074060 CN200810074060A CN101252164B CN 101252164 B CN101252164 B CN 101252164B CN 200810074060 CN200810074060 CN 200810074060 CN 200810074060 A CN200810074060 A CN 200810074060A CN 101252164 B CN101252164 B CN 101252164B
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- reflector
- semiconductor light
- substrate parts
- emitting elements
- surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The present invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.
Description
Technical field
The present invention relates to surface mounting luminous diode, particularly relate to and pay attention to thermal diffusivity, reliability and productive surface mounting luminous diode and manufacture method thereof.
Background technology
Semiconductor light-emitting elements forms PN junction on compound semiconductor wafers such as AlInGaP or GaN, it is passed to forward current, obtains the luminous of visible light or near infrared light, in recent years, and to be shown as representative, extensive use in communication, instrumentation, control etc.Particularly range of application also expands in the automotive field of paying attention to thermal diffusivity and reliability.In surface mounting luminous diode, also developed the product that responds such requirement.
As shown in figure 16, the structure of surface mounting luminous diode 100 in the past is, semiconductor light-emitting elements 103 is installed on the matrix 101 with electrode 102, pass through wire-bonded, with conductivity lead-in wire 104 each electrode of semiconductor light-emitting elements 103 is connected on each electrode 102 of matrix 101, moulding part 105 is set in matrix 101.
Produce heat when the semiconductor light-emitting elements (led chip) of lift-launch in surface mounting luminous diode is luminous, but the electric current that flows to led chip is big more, the generating capacity of heat is just big more.In addition, general, the temperature of led chip is high more, and the luminous efficiency of led chip descends more, and the light deterioration becomes remarkable in addition.That is, even flow through big electric current, also not obvious brightening, the lost of life of led chip.Therefore, be discharged into the outside efficiently, reduce its temperature by making the heat that produces from led chip, thereby even high electric current can be provided, led chip that also can luminous efficiency is good, life characteristic is good.
About the described semiconductor light-emitting apparatus in the past of seeking the raising of radiating effect, for example open flat 11-46018 communique, spy and open that 2002-222998 communique, spy are opened the 2000-58924 communique, the spy opens in 2000-77725 communique and the Te Kai 2000-216443 communique on the books the spy.Open in flat 11-46018 communique and the Te Kai 2002-222998 communique the spy, by increasing the surface area of lead frame, perhaps open the 2000-58924 communique the spy, the spy opens in 2000-77725 communique and the Te Kai 2000-216443 communique, by the material that the makes substrate metal bigger, thereby improve thermal diffusivity than the heat conductivity of resin.
, in surface mounting luminous diode in the past 100 shown in Figure 16, the only heat radiation of being accepted from semiconductor light-emitting elements 103 by electrode 102 is so thermal diffusivity is insufficient.In addition, under the condition of strictness such as vehicle-mounted purposes environment resistant (temperature or vibration etc.), reliability is not enough.In addition, in the reflector of the light reflection that is used for semiconductor light-emitting elements 103 is produced, dispose fluorophor (material), therefore be necessary to make in the moulding part 105 that covers semiconductor light-emitting elements 103 and contain fluorophor., the resin that contains fluorophor near semiconductor light-emitting elements 103, if be exposed in the high temperature that the heating of Yin's semiconductor light-emitting elements causes, will deterioration, so as the lost of life of light source.
Summary of the invention
Main purpose of the present invention is, the surface mounting luminous diode and the manufacture method thereof of thermal diffusivity, reliability and productivity excellence is provided.
Surface mounting luminous diode of the present invention has the metallic reflector that metal substrate parts, the back side engage the semiconductor light-emitting elements that is fixed on the substrate parts, engage across the joint fastener with insulating properties according to the mode of surrounding semiconductor light-emitting elements on substrate parts.
At this moment, conduct to reflector by substrate parts and joint fastener, dispel the heat to the outside from reflector from the heat that semiconductor light-emitting elements produces.In addition, Yi Bufen heat is dispelled the heat to the outside by substrate parts.Substrate parts and reflector all are metallic, so can in addition, can efficiently emit the light that produces from semiconductor light-emitting elements to the outside the heat that produces from semiconductor light-emitting elements efficiently to the outside heat radiation.For example on the surface of metal material, by electroplating processing, stacked other metals make up a plurality of metals, thereby form reflector, if but form as the one thing, just make easily, can improve productivity, so better.When forming as the one thing, the material of reflector is not limited to the metal of simple substance, also can be alloy.
In addition, the outer peripheral face at reflector forms the protuberance that has than the littler width of width of this outer peripheral face.Reflector is a metallic, so if be provided with thickly, it is difficult that cutting just becomes.Therefore, in operation, as cutting portion by the sheet material forming reflector, the zone thinner than the thickness of sheet material is set, if along the cutting of this cutting portion, just can easier cutting, so the rate of finished products of surface mounting luminous diode can not descend, can improve productivity.The shape of the cutting portion after the cutting is described protuberance.If the formation protuberance, the surface area of reflector just increases, so can dispel the heat more efficiently.
In addition, also can form a plurality of protuberances at the outer peripheral face of reflector.At this moment, further promote from the heat radiation of reflector, so can further improve thermal diffusivity to the outside.
In addition, the preferred substrate parts be by among Al, Cu, Fe, the Mg at least more than any one or their complex constitute.These material pyroconductivity height are so can become the heat that produces from semiconductor light-emitting elements to the good substrate parts of the thermal diffusivity of outside.In addition, the processability of these materials is good, so make easily.
In addition, preferred reflector is constituting more than any one or by their complex at least by Al, Cu, Fe, Mg.These material pyroconductivity height are so can become the heat that produces from semiconductor light-emitting elements to the good reflector of the thermal diffusivity of outside.In addition, the processability of these materials is good, so make easily.
In addition, preferably a plurality of semiconductor light-emitting elements are set at surface mounting luminous diode.At this moment, can obtain high output light source.If a semiconductor light-emitting elements such as the green pink group led chip of blueness is installed respectively, then distribute by the electric current of adjusting to each led chip, just can obtain the light source that white etc. can be mixed colours.Described led chip of all kinds can be installed a plurality of respectively.
In addition, the preferred substrate parts comprise the part that in substrate parts, engages fixing semiconductor light-emitting elements and in substrate parts the insulating element of the part electric insulation of joint reflector.At this moment, because semiconductor light-emitting elements and in substrate parts, engage the part electric insulation of reflector, so be electrically connected, thereby can be to the semiconductor light-emitting elements supplying electric current by part with the joint reflector of the electrode of semiconductor light-emitting elements and metal substrate parts.The i.e. part of the joint reflector by being electrically connected semiconductor light-emitting elements and substrate parts, thus can be formed for the circuit that makes surface mounting luminous diode luminous.
In addition, preferred joint fastener by heat conductivity silicon, heat conductivity acrylic resin, heat conductivity epoxy resin at least more than any one or they stacked be their complex (polylayer forest) formation of stratiform.These material coefficient of heat conduction height (for example more than the 1.0W/mK), thus can be efficiently producing from semiconductor light-emitting elements, the heat heat radiation of in translucent resin, distributing.Here, the heat conductivity joint fastener is filled the heat conductivity fill,, can use the good silica of heat conduction, aluminium oxide, magnesium oxide, aluminium hydroxide etc. as packing material.In addition, as the heat conductivity joint fastener, also consider the structure of stacked in order heat conductivity jointing material, aluminium foil and heat conduction jointing material or the structure of stacked in order heat conduction jointing material, heat conductivity compound and heat conduction jointing material.
In addition, the inner peripheral surface of preferred reflector is forming partially arbitrarily in taper seat, sphere, the parabola.At this moment, can be efficiently to emit the light that produces from semiconductor light-emitting elements.
In addition, the preferred substrate parts engaging the fixedly surface of semiconductor light-emitting elements, carry out gold-plated or silver-plated surface treatment at least.At this moment, semiconductor light-emitting elements is engaged the welding that is fixed on the substrate parts and become good.In addition, just silver-plated, the light reflectivity height takes out efficient from the outside of the light of the basad parts of semiconductor light-emitting elements radiation and improves.
In addition, gold-plated or silver-plated surface treatment is carried out on the surface of substrate parts, formed the conductor layer that is electrically connected with semiconductor light-emitting elements.At this moment, can suppress the rotten of conductor layer.
In addition, on substrate parts, according to the covering semiconductor light-emitting elements, and the mode that does not contact with reflector is provided with translucent resin.At this moment, cover semiconductor light-emitting elements, be used for not contacting from the translucent resin that comes protective circuit with reflector with outer air bound.Therefore, can not be accompanied by from the heat conduction of semiconductor light-emitting elements to translucent resin, produce translucent resin expansion and contraction, the problem that translucent resin is peeled off from reflector, substrate parts expansion and contraction can not take place in addition, the problem that translucent resin is peeled off from reflector so can reduce the failure rate of surface mounting luminous diode, improves reliability.In addition, can constitute substrate parts and reflector with materials having different thermal expansion coefficient.
In addition, preferred translucent resin contains fluorophor, and more long wavelength's light of the light of emitting than semiconductor light-emitting elements is sent in the light stimulus that should be emitted by semiconductor light-emitting elements by fluorophor.For example, semiconductor light-emitting elements is the blue based semiconductor light emitting element that is made of gallium nitride compound, and translucent resin contains fluorophor, this fluorophor is when the light stimulus of being emitted by blue based semiconductor light emitting element, send the light of yellow class,, can obtain white light source according to this structure.It should be noted that semiconductor light-emitting elements can be Zn0 (zinc oxide) compounds, also can be the semiconductor light-emitting elements that sends the light of near ultraviolet class color.
In addition, the composition surface of reflector and substrate parts can have concavo-convex, also can be zigzag.At this moment, improve from the heat conduction of joint fastener to reflector.Therefore, can dispel the heat the heat that semiconductor light-emitting elements produces to the outside more efficiently.In addition, can improve the bond strength of reflector.
The manufacture method of surface mounting luminous diode of the present invention has the operation at stacked in order insulating barrier of the part on the surface of metal substrate parts aggregate and conductor layer.In addition, the operation that has the groove of a plurality of through hole of formation portion, cut-out usefulness on the former material of metal reflector.In addition, has the operation that on the substrate parts aggregate, engages the former material of reflector across the heat conductivity joint fastener.In addition, have, a plurality of semiconductor light-emitting elements are engaged the operation that is fixed on the substrate parts aggregate in the inboard of a plurality of through hole portion.In addition, has the operation that connects semiconductor light-emitting elements and conductor layer.In addition, have, be divided into the operation of surface mounting luminous diode with single substrate parts and reflector along groove cutting former material of reflector and substrate parts aggregate.
At this moment, because substrate parts and reflector are metallic, so can in addition, can efficiently be released to the outside to the light that produces from semiconductor light-emitting elements the hot high efficiency and heat radiation that produces from semiconductor light-emitting elements to the outside.If metal reflector is set thickly, it is difficult that cutting just becomes, but just become easily by forming the groove that cuts off usefulness on the former material of reflector, cutting, so the rate of finished products of surface mounting luminous diode can not descend, can improve productivity.
Below combine with accompanying drawing and to describe the present invention, described and other purposes, feature, aspect, advantage of the present invention will become more obvious.
Description of drawings
Fig. 1 is a part of schematic diagram of profile construction of the surface mounting luminous diode of expression first execution mode of the present invention.
Fig. 2 is the schematic diagram of the conduction of the heat that produces of expression semiconductor light-emitting elements.
Fig. 3 is the flow chart of the manufacturing process of presentation surface mount type light-emitting diode.
Fig. 4 is the schematic diagram that the expression conductor layer forms operation.
Fig. 5 is that the expression joint fastener is pasted the schematic diagram of operation.
Fig. 6 is the schematic diagram that the former material of expression reflector engages operation.
Fig. 7 is that the expression semiconductor light-emitting elements engages the fixedly schematic diagram of operation.
Fig. 8 is the schematic diagram of expression translucent resin filling work procedure.
Fig. 9 A is the side view of sheet material.
Fig. 9 B is the profile behind the press grain forming.
Fig. 9 C is the profile of the former material of reflector.
Figure 10 is the schematic diagram of a part of profile construction of the surface mounting luminous diode of expression second execution mode.
Figure 11 is the stereogram of surface mounting luminous diode shown in Figure 10.
Figure 12 is the flow chart of manufacturing process of the surface mounting luminous diode of expression second execution mode.
Figure 13 is the schematic diagram of a part of profile construction of surface mounting luminous diode of variation of the shape of expression reflector.
Figure 14 is the schematic diagram of a part of profile construction of surface mounting luminous diode of other variation of the shape of expression reflector.
Figure 15 is the schematic diagram of a part of profile construction of surface mounting luminous diode of other variation of the shape of expression reflector.
Figure 16 is a generalized section of representing the example of structure of surface mounting luminous diode in the past.
Embodiment
Below, embodiments of the invention are described with reference to the accompanying drawings.It should be noted that, in following accompanying drawing,, do not repeat its explanation the additional identical reference marks of same or suitable part.
(first execution mode)
As shown in Figure 1, surface mounting luminous diode 10 is made of semiconductor light-emitting elements 1, substrate parts 2, insulating barrier 3, conductor layer 4, heat conductivity joint fastener 5, the reflector 6 with protuberance 9, the translucent resin 7 that contains fluorophor and lead 8.
In addition, semiconductor light-emitting elements 1 is carried in ratio reflector 6 insides on substrate parts 2, and semiconductor light-emitting elements 1 is covered by the translucent resin 7 that silicones constitutes.Translucent resin 7 if contain by the light stimulus from semiconductor light-emitting elements, just sends the fluorophor of the light of yellow class, and disperses to keep this fluorophor.
Semiconductor light-emitting elements 1 is the semiconductor light-emitting elements of the blue class that is made of gallium nitride compound semiconductor, is formed on one side (among Fig. 1, above a side) to have the shaped like chips of P, N electrode.If semiconductor light-emitting elements 1 is luminous, just send the light of blue class.At this moment, the fluorophor that the light by blue class is disperseed to keep by translucent resin 7 absorb the yellow class that obtains light, and the light of the blue class that do not absorbed by fluorophor between colour mixture, obtain the light of white group.If carry a plurality of described semiconductor light-emitting elements 1, just can obtain the light source of higher output.Here, the shape of translucent resin 7 also can form towards the lens-shaped away from the side protuberance on the surface of substrate parts 2.Here, the luminous peak wavelength that only refers to of blue class is the following light of the above 490nm of 350nm.In addition, the luminous peak wavelength that only refers to of yellow class is light long wavelength's the light more of the following described blue class of ratio of the above 650nm of 550nm.
Here, translucent resin 7 does not contact with reflector 6.Therefore, the expansion and the contraction that cause producing translucent resin 7 owing to the heat that produces from semiconductor light-emitting elements 1 can not take place, translucent resin 7 is peeled off such problem from reflector 6, can reduce the failure rate of surface mounting luminous diode 10, can improve reliability.In addition, can constitute substrate parts 2 and reflector 6 with materials having different thermal expansion coefficient.
In Fig. 2, arrow a, b, c, d represent the conduction of heat.As shown in Figure 2, the heat of semiconductor light-emitting elements 1 generation basad parts 2 conduction as arrow a, b.Pining for of basad parts 2 conduction, a part is dispelled the heat to the outside by substrate parts, and as arrow b, c, a part is conducted to reflector 6 by heat conductivity joint fastener 5., as arrow d, dispel the heat to the heat of reflector 6 conduction to the outside.
Substrate parts and reflector 6 are Al systems, and the pyroconductivity height is so can constitute efficiently the thermal diffusivity good surface mounting luminous diode 10 of the heat that produces from semiconductor light-emitting elements 1 to the outside heat radiation.Form protuberance 9 at reflector 6, the surface area of reflector 6 increases, so can dispel the heat more efficiently.In addition, reflector 6 engages with substrate parts 2 across heat conductivity joint fastener 5, so thermal capacitance is easily conducted the reflector 6 to the Al system, can reject heat to the outside to the heat that produces from semiconductor light-emitting elements 1 efficiently.Heat conductivity joint fastener 5 uses heat conductivity good certainly, for example as heat conductivity joint fastener 5, can use in heat conductivity silicon, heat conductivity acrylic resin, the heat conductivity epoxy resin any one above or they stacked complexs (polylayer forest) that constitutes as stratiform.Deng
Can efficiently efficiently dispel the heat the heat that produces from semiconductor light-emitting elements 1 to the outside, so the temperature of semiconductor light-emitting elements 1 reduces, the temperature that covers the translucent resin 7 of semiconductor light-emitting elements 1 also keeps very low.Therefore, can be suppressed at the deterioration that the fluorophor that disperses maintenance in the translucent resin 7 is exposed to the translucent resin 7 that causes in the high temperature of semiconductor light-emitting elements 1.In view of the above, can prolong the life-span of surface mounting luminous diode 10.In addition, can suppress from the color scattered error of surface mounting luminous diode 10 generations.
As the fluorophor that in translucent resin 7, disperse to keep, comprise at least a of the YAG class (yttrium-aluminium-garnet) of adding gadolinium and cerium, BOS class (Barium Ortho-Silicate), TAG class (terbium aluminium garnet).It should be noted that,, be necessary in translucent resin 7, to contain fluorophor, but, can certainly be the structure of only using the translucent resin 7 sealing semiconductor light-emitting components 1 that do not contain fluorophor as surface mounting luminous diode 10 in order to obtain white light.Preferred translucent resin 7 is that silicones, epoxy resin, acrylic resin, fluorine-type resin, polyimide resin, silicon denaturation loop epoxy resins etc. are more than at least a kind or its complex.The part of the heat that produces from semiconductor light-emitting elements 1 by translucent resin 7 to the outside heat radiation, so better be the translucent resin 7 of thermal diffusivity good (for example more than the pyroconductivity 0.3W/mK).
In addition, the light that produces from semiconductor light-emitting elements 1 is formed by metal (Al) because of reflector 6, so efficiently radiate to the outside.Reflector 6 is formed by metal (Al), at the inner peripheral surface of reflector 6, as the reflector, need not be used to improve the Al evaporation, the coat of metal of reflectivity etc., becomes easy so make.In addition, only make, become easy so make of heat conductivity joint fastener 5 joint substrate parts 2 and reflector 6.
Below, the manufacturing process of surface mounting luminous diode shown in Figure 1 10 is described.As shown in Figure 3, at first, in operation (S10),, prepare the tabular aluminium of thickness 0.5mm as the substrate parts aggregate.Here, with use coining die from above the method that is shaped of the direction embossing that presses down, make the substrate parts aggregate engage in the operation in the back the surface of fixing semiconductor light-emitting elements promptly top, with the following formation recess of a top opposite side.Here, the substrate parts aggregate is by cutting (cut-outs), is configured as the former material of substrate parts 2, as described later, through the joint of semiconductor light-emitting elements 1 fixing with wire-bonded and resin-sealed each operation after, cut off, be separated into each substrate parts 2.
Then, in operation (S20), as shown in Figure 4, according to the surface of the side that covers tabular substrate parts aggregate and the mode of described recess, by CVD (Chemical VaporDeposition, chemical vapour deposition (CVD)) method, stacked silicon dioxide layer (thickness 0.1mm) as insulating barrier 3.Then, in operation (S30),, use and electroplate, form copper film (thickness 0.035mm), and then use silver impregnation method, the stacked conductor layer 4 that constitutes by silver-colored film (thickness 0.005mm) as the metal line patterned conductor on the surface of insulating barrier 3.The electroplate of conductor layer 4 is covered by silver-colored film, so can suppress the rotten of conductor layer 4.Then, in operation (S40), as shown in Figure 5, a side on the substrate parts aggregate is at the sheet heat conductivity acrylic resin (thickness 0.05mm) of conductor layer 4 stickups as heat conductivity joint fastener 5.
And in operation (S110)～(S140), form the former material of reflector.At first, in operation (S110), shown in Fig. 9 A, prepare aluminium sheet (thickness 1mm) as sheet material 11.In Fig. 9 A, the material of growing perpendicular to the direction of paper, as sheet material 11, is prepared in the side of diagram sheet material 11 in fact.Then in operation (S120), by using coining die, from above the direction that presses down carry out the method for two sides press grain forming, the groove 12 that forms through hole portion 13 and cut off usefulness at aluminium sheet.Here, through hole portion 13 is the formation partially of taper seat, the section behind the press grain forming shown in Fig. 9 B, and the diameter of through hole portion 13 reduces to downside from the upside of figure.The groove 12 that cuts off usefulness becomes than the thinner zone of sheet material 11 thickness.Then, in operation (S130), cut along the groove 12 that cuts off usefulness.Like this, in operation (S140), finish the former material of tabular reflector.The former material of reflector is perpendicular to the long sheet material of the direction of the paper of Fig. 9 C, and a plurality of part bonding that will form reflector 6 along cutting in this direction operation afterwards form the former material of this reflector together.
Then, in operation (S50), as shown in Figure 6, on heat conductivity joint fastener 5, engage the former material of reflector.At this constantly, the former material of reflector is at the long sheet material of direction perpendicular to the paper of Fig. 6, have in the cutting of operation (S130), after the groove 12 that cuts off usefulness blocks as the remaining protuberance 9 of cutting portion.
Then, in operation (S60), as shown in Figure 7, the epoxy resin that is used as transparent resin on substrate parts 2 engages fixing (assembling) semiconductor light-emitting elements 1.Semiconductor light-emitting elements 1 is engaged the inboard of the through hole portion 13 that the mode according to the part of the taper seat that forms the former material of reflector that is fixed on forms, so the part of this taper seat becomes the inner peripheral surface of reflector 6, therefore, can emit the light that produces from semiconductor light-emitting elements 1 to the outside efficiently.Then, in operation (S70),, use conductor wire (lead) 8 to connect each electrode of semiconductor light-emitting elements 1 and the pad (bonding pad) of the conductor layer 4 of correspondence by wire-bonded.Then, in operation (S80), as shown in Figure 8, use distributor, fill the translucent resin 6 (for example silicones) that contains BOS class yellow fluorophor in the inside of reflector 6.
Then in operation (S90), the groove of the cut-out usefulness that forms on the former material of reflector is (in the reflector former material long perpendicular to the direction of the paper of Fig. 8, on the section different, form the groove that cuts off usefulness with the section of Fig. 8, so do not illustrate the groove of this cut-out usefulness), carry out the cutting of former material of reflector and substrate parts aggregate.On the former material of metal reflector, form the groove that cuts off usefulness, cut,, can cut easily so the cut-out width of the former material of reflector reduces along the groove that cuts off usefulness.Therefore, the generation of the defective products in the cutting action can be suppressed,, productivity can be improved so the rate of finished products of surface mounting luminous diode 10 can not reduce.Like this, in operation (S100), make single surface mounting luminous diode 10 shown in Figure 1 with single substrate parts 2 and reflector 6.
It should be noted that in embodiment 1, semiconductor light-emitting elements 1 is formed on having the shaped like chips of P, N electrode in the one side, but is not limited to this structure, also can be formed in the structure on the chip that both sides have P, N electrode.When semiconductor light-emitting elements 1 has electrode in the back side of a side that contacts with substrate parts 2 one side, fix the surface of this semiconductor light-emitting elements 1 at the joint of substrate parts 2, if carry out gold-plated or silver-plated surface treatment, then semiconductor light-emitting elements 1 is engaged the welding that is fixed on the substrate parts 2 and just become good.When silver-plated, the light reflectivity height, the outside of light is taken out efficient and is improved.In addition, the substrate of semiconductor light-emitting elements 1 can be an insulator.Semiconductor light-emitting elements 1 is not limited to gallium nitride compound semiconductor, certainly uses ZnO (zinc oxide) compounds semiconductor, InGaAlP class, AlGaAs compounds semiconductor.Construct arbitrarily with these, can be installed in semiconductor light-emitting elements 1 on the substrate parts 2.
And then, can be installed in a plurality of semiconductor light-emitting elements 1 on the substrate parts 2.If a plurality of homochromy semiconductor light-emitting elements 1 are installed, just can be obtained high output light source.In addition,, distribute, can obtain the light source of mixing colours of white etc. certainly by the electric current of adjusting each led chip if the semiconductor light-emitting elements such as blueness, green, pink group led chip of or equal number for example are installed respectively.
(second execution mode)
The surface mounting luminous diode 10 of the surface mounting luminous diode 20 of second execution mode and the first above-mentioned execution mode has essentially identical structure., in second execution mode, be with the difference of first execution mode, insulating barrier 3 and conductor layer 4 be constructed to structure shown in Figure 11.
Particularly, the reflector 6 of formation surface mounting luminous diode 20 for example forms the ellipse that is shaped as major diameter 2mm, minor axis 0.8mm of through hole.Surface beyond the face that contacts with substrate parts 2 across heat conductivity joint fastener 5 of reflector 6 is across insulating barrier 3 laminated conductor layers 4.Semiconductor light-emitting elements 1 and conductor layer 4 are electrically connected by lead 8.By being connected the external connection terminals portion 81,82 on the conductor layer 4, be used to make semiconductor light-emitting elements 1 luminous electric current to offer semiconductor light-emitting elements 1 from outside.About other structures of surface mounting luminous diode 20, described in first execution mode, so do not repeat this explanation.
Below, the manufacturing process of surface mounting luminous diode shown in Figure 10 20 is described.As shown in figure 12, at first in operation (S10),, prepare the tabular aluminium of thickness 0.5mm as the substrate parts aggregate.Then in operation (S20), stickup is as the laminal heat conductivity silicon (thickness 0.05mm) of heat conductivity joint fastener 5 on the substrate parts aggregate.And in operation (S110)～(S140), form the former material of reflector.The operation (S110)～(S140) of the former material of formation reflector as described in example 1 above.
Then in operation (S30), on heat conductivity joint fastener 5, engage the former material of reflector.Follow in operation (S40), on the former material of reflector, by CVD (Chemical VaporDeposition) method, stacked silicon dioxide layer (thickness 0.1mm) as insulating barrier 3.Then, in operation (S50),, use and electroplate, form copper film (thickness 0.035mm), re-use silver impregnation method, the stacked conductor layer 4 that constitutes by silver-colored film (thickness 0.005mm) as the metal line patterned conductor on the surface of insulating barrier 3.About the later operation of operation (S60), as described in example 1 above, so do not repeat this explanation.
It should be noted that, in the explanation of second execution mode, describe the example of an aluminium plate being made substrate parts 2 and reflector 6 as raw material at first execution mode, but, also can be on the surface of metal material, by electroplating processing, stacked other metals make up multiple metal and form.The metal material that forms substrate parts 2 and reflector 6 is not limited to Al, can also use Cu, Fe, the Mg of thermal diffusivity and excellent in workability etc., also can be their complex.,, just as shown in Figure 9, can make easily, can improve productivity, so better if substrate parts 2 and the reflector 6 one thing as metal is formed.When forming as the one thing, the material of substrate parts 2 and reflector 6 is not limited to the metal of simple substance, also can be alloy.
About the shape of reflector 6, as shown in figure 13, the part of removing as the inner peripheral surface of light reflection surface of reflector 6 is set to concaveconvex shape as protuberance 9, also can become the such shape of fin.If like this, just can further promote from the heat radiation of reflector 6, so can further improve thermal diffusivity to the outside.In addition, the light reflection surface of reflector 6 is not limited to taper seat, also can be to form reflector 6 according to the mode that becomes a sphere or a paraboloidal part, at this moment, can efficiently emit the light that produces from semiconductor light-emitting elements 1.
Insulating barrier 3 is not limited to silicon dioxide, can engage for example acrylic rubber, epoxy resin, silicon etc. with substrate parts 2 and conductor layer 4 by the heat conduction jointing material to constitute insulating barrier 3.
In addition, also can adopt heat conductivity joint fastener 5 and translucent resin 7 contacting structure.For example, in surface mounting luminous diode shown in Figure 1 10, if adopt except the zone of semiconductor light-emitting elements 1 with conductor layer 4 wire-bonded, in the structure that also forms heat conductivity joint fastener 5 than the internal perisporium inside of reflector 6, heat conductivity joint fastener 5 is contacted with translucent resin 7.At this moment, the heat of distributing in the translucent resin 7 is conducted to reflector 6 by heat conductivity joint fastener 5.Therefore, the heat that can produce semiconductor light-emitting elements 1 is more efficiently dispelled the heat to the outside.
Also reflector 6 can be formed the shape of the area increase of heat conductivity joint fastener 5 and reflector 6 joints.For example, reflector 6 with the junction surface of heat conductivity joint fastener 5, can be configured as and shown in Figure 14 have concavo-convex shape or can be configured as shape shown in Figure 15 with jagged thin rag.If improve like this, from the heat conduction of heat conductivity joint fastener 5 to reflector 6.Therefore, can dispel the heat the heat that semiconductor light-emitting elements 1 produces to the outside more efficiently.In addition, can improve the bond strength of reflector 6.
Though described and illustrated the present invention in detail, above obviously embodiment is an illustration of the present invention, is not limitation of the invention, and scope of the present invention is limited by additional claims.
Claims (16)
1. surface mounting luminous diode comprises:
Metal substrate parts;
The back side is engaged the semiconductor light-emitting elements that is fixed on the described substrate parts; And
Metal reflector,
The stacked insulating barrier of a part on the surface of described substrate parts, build up conductor layer at the superficial layer of described insulating barrier into the metal line patterned conductor, at the stacked heat conductivity joint fastener in the part zone of described conductor layer with insulating properties, on described heat conductivity joint fastener, described reflector is set according to the mode of surrounding described semiconductor light-emitting elements
Described substrate parts and described conductor layer, the electric insulation by described insulating barrier,
The electrode of described semiconductor light-emitting elements is electrically connected with described conductor layer by lead,
Described heat conductivity joint fastener engages described substrate parts and described reflector,
On described substrate parts, translucent resin is set according to the mode that covers described semiconductor light-emitting elements and do not contact with described reflector.
2. surface mounting luminous diode according to claim 1 is characterized in that:
Outer peripheral face at described reflector forms the protuberance that has than the littler width of width of described outer peripheral face.
3. surface mounting luminous diode according to claim 2 is characterized in that:
Form a plurality of described protuberances.
4. surface mounting luminous diode according to claim 1 is characterized in that:
Described substrate parts by among Al, Cu, Fe, the Mg at least more than any one or their complex constitute.
5. surface mounting luminous diode according to claim 1 is characterized in that:
Described reflector by among Al, Cu, Fe, the Mg at least more than any one or their complex constitute.
6. surface mounting luminous diode according to claim 1 is characterized in that:
Possess a plurality of described semiconductor light-emitting elements.
7. surface mounting luminous diode according to claim 1 is characterized in that:
Described substrate parts comprises and will engage part of fixing described semiconductor light-emitting elements and the insulating element that engages the part electric insulation of described reflector on described substrate parts on the described substrate parts.
8. surface mounting luminous diode according to claim 1 is characterized in that:
Described joint fastener be by heat conductivity silicon, heat conductivity acrylic resin, heat conductivity epoxy resin at least more than any one or their complex constitute.
9. surface mounting luminous diode according to claim 1 is characterized in that:
The inner peripheral surface of described reflector, according to become taper seat, sphere, paraboloidal any one the mode of a part forms.
10. surface mounting luminous diode according to claim 1 is characterized in that:
Described substrate parts on the surface that engages fixing described semiconductor light-emitting elements, carries out gold-plated or silver-plated surface treatment at least.
11. surface mounting luminous diode according to claim 1 is characterized in that:
Gold-plated or silver-plated surface treatment is carried out on surface to described substrate parts, forms the conductor layer that is electrically connected with described semiconductor light-emitting elements.
12. surface mounting luminous diode according to claim 1 is characterized in that:
Described translucent resin contains fluorophor, the light stimulus that this fluorophor is emitted by described semiconductor light-emitting elements, and send the longer light of light wavelength of emitting than described semiconductor light-emitting elements.
13. surface mounting luminous diode according to claim 1 is characterized in that:
Described semiconductor light-emitting elements is the blue based semiconductor light emitting element that is made of gallium nitride compound semiconductor;
On described substrate parts, translucent resin is set according to the mode that covers described blue based semiconductor light emitting element and do not contact with described reflector;
Described translucent resin contains fluorophor, and this fluorophor sends the light of yellow class when the light stimulus of being emitted by described blue based semiconductor light emitting element.
14. surface mounting luminous diode according to claim 1 is characterized in that:
Composition surface between the substrate parts described reflector and described has concavo-convex.
15. surface mounting luminous diode according to claim 1 is characterized in that:
Composition surface between the substrate parts described reflector and described is a zigzag.
16. the manufacture method of a surface mounting luminous diode comprises:
In the stacked in order formation insulating barrier of a part on the surface of metal substrate parts aggregate and the operation of conductor layer;
On the former material of metal reflector, form a plurality of through hole portions and cut off the operation of the groove of usefulness;
On described substrate parts aggregate, engage the operation of the former material of described reflector across the heat conductivity joint fastener;
Inboard in described a plurality of through hole portion engages a plurality of semiconductor light-emitting elements the operation that is fixed on the described substrate parts aggregate;
Operation with described semiconductor light-emitting elements and the electrical connection of described conductor layer;
On described substrate parts aggregate, fill the operation of translucent resin according to the mode that covers described semiconductor light-emitting elements and do not contact with the former material of described reflector; And
Cut former material of described reflector and described substrate parts aggregate along described groove, be divided into the operation of surface mounting luminous diode with single substrate parts and reflector.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007042642 | 2007-02-22 | ||
| JP2007042642 | 2007-02-22 | ||
| JP2007-042642 | 2007-02-22 | ||
| JP2007339975 | 2007-12-28 | ||
| JP2007339975A JP5106094B2 (en) | 2007-02-22 | 2007-12-28 | Surface mount type light emitting diode and method for manufacturing the same |
| JP2007-339975 | 2007-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101252164A CN101252164A (en) | 2008-08-27 |
| CN101252164B true CN101252164B (en) | 2010-10-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810074060 Expired - Fee Related CN101252164B (en) | 2007-02-22 | 2008-02-21 | Surface mounting type light emitting diode and method for manufacturing the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP5106094B2 (en) |
| CN (1) | CN101252164B (en) |
Families Citing this family (12)
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|---|---|---|---|---|
| JP5361408B2 (en) * | 2009-01-22 | 2013-12-04 | 京セラ株式会社 | LIGHT EMITTING DEVICE AND LIGHTING DEVICE USING THE SAME |
| JP2011014890A (en) | 2009-06-02 | 2011-01-20 | Mitsubishi Chemicals Corp | Metal substrate and light source device |
| JP5603583B2 (en) * | 2009-09-29 | 2014-10-08 | オリンパス株式会社 | Endoscope |
| JP5485642B2 (en) * | 2009-10-06 | 2014-05-07 | シチズン電子株式会社 | Light emitting diode and manufacturing method thereof |
| KR101039881B1 (en) * | 2009-12-21 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and light unit using the same |
| KR101253247B1 (en) * | 2011-07-14 | 2013-04-16 | (주)포인트엔지니어링 | substrate for light emitting device |
| JP6205894B2 (en) * | 2012-07-04 | 2017-10-04 | 日亜化学工業株式会社 | Package molded body for light emitting device and light emitting device using the same |
| CN103096615A (en) * | 2012-11-14 | 2013-05-08 | 南京市江宁区丁卯电子科技中心 | Flexible printed circuit board provided with light emitting diode |
| US10411173B2 (en) | 2015-03-31 | 2019-09-10 | Nichia Corporation | Light emitting device and light emitting module using the same |
| CN110299441A (en) * | 2018-03-22 | 2019-10-01 | 中国科学院半导体研究所 | Silicon substrate reflection circle, preparation method and the LED component of LED light extraction efficiency can be improved |
| CN109713107A (en) * | 2018-12-13 | 2019-05-03 | 佛山市国星光电股份有限公司 | Supporting structure, LED component and lamp group array |
| CN109586165B (en) * | 2019-01-25 | 2020-04-07 | 维沃移动通信有限公司 | Laser module and electronic equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2012256953A (en) | 2012-12-27 |
| JP2008235868A (en) | 2008-10-02 |
| CN101252164A (en) | 2008-08-27 |
| JP5106094B2 (en) | 2012-12-26 |
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