CN103427005B - Luminescent diode component and preparation method thereof and light source module - Google Patents
Luminescent diode component and preparation method thereof and light source module Download PDFInfo
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- CN103427005B CN103427005B CN201210161559.3A CN201210161559A CN103427005B CN 103427005 B CN103427005 B CN 103427005B CN 201210161559 A CN201210161559 A CN 201210161559A CN 103427005 B CN103427005 B CN 103427005B
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- 238000006243 chemical reaction Methods 0.000 claims description 30
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- 238000005530 etching Methods 0.000 claims description 3
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- 238000007639 printing Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
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- 229920006375 polyphtalamide Polymers 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
A kind of luminescent diode component and preparation method thereof and light source module, luminescent diode component comprises at least two conductive units, at least one emitting semiconductor crystal grain and a smooth penetrated bed, between two conductive units, there is a fluting, this emitting semiconductor crystal grain is connected across described conductive unit, and coated this emitting semiconductor crystal grain of this light penetrated bed is also filled in this fluting at least partly with in conjunction with two conductive units. The light element of luminescent diode component of the present invention and light penetrated bed fitted seal emitting semiconductor crystal grain, the area that can effectively reduce luminescent diode component also can promote the insulation effect of luminescent diode component.
Description
Technical field
The present invention relates to a kind of luminescent diode component, espespecially a kind of light-emitting diode.
Background technology
Coordinating and consult Fig. 1, is the cutaway view of existing luminescent diode component.
Luminescent diode component comprises one first wire support 800, a crystal grain bearing support 802, oneTwo wire supports 804, a LED crystal particle 806, an insulator 808, many wires 810 andPrinting opacity colloid 814. Insulator 808 is to use light tight glue material, as: polyphthalamide(Polyphthalamide, PPA) etc. is made, in order to fix the first wire support 800, crystal grain carryingSupport 802 and the second wire support 804, and form a cup-shaped crystal bonding area 812 roughly, crystal grain holdsCarry support 802 and be exposed to crystal bonding area 812; Wherein insulator 808 is to utilize injection molding method to be formed atThe first wire support 800, crystal grain bearing support 802 and the second wire support 804 peripheries.
LED crystal particle 806 is arranged on crystal grain bearing support 802, LED crystal particle 806For example, be electrically connected to the first wire support 800 and the second wire support 804 by wire (bonding wire) 810. ThoroughlyOptical cement body 814 is placed in crystal bonding area 812 in order to cover LED crystal particle 806 and guardwire 810.
From the above mentioned, the first wire support 800, crystal grain bearing support 802, the second bearing support 804,Insulator 808 and printing opacity colloid 814 coordinate coated LED crystal particle 806 airtightly. But, absolutelyThe thermal resistance of edge body 808 itself is large, makes the heat-conducting effect of the luminescent diode component making poor; Secondly,The volume of insulator 808 becomes the main cause that the volume of luminescent diode component cannot dwindle effectively, and carriesHigh cost of manufacture; Moreover the colloid that making insulator 808 uses is old along with the increase of service timeChange, and produce reliability issues.
Summary of the invention
The object of the invention is to effectively dwindle luminescent diode component volume, improving radiating effect andReduce cost of manufacture.
The invention provides a kind of luminescent diode component. It is single that this luminescent diode component comprises at least two conductionsFirst, at least one emitting semiconductor crystal grain and a smooth penetrated bed, have a fluting between two conductive units, shouldEmitting semiconductor crystal grain is connected across described multiple conductive unit, and this light penetrated bed is coated this emitting semiconductor crystalline substanceGrain is also filled in this fluting at least partly with in conjunction with two conductive units.
The invention provides a kind of luminescent diode component, it is single that this luminescent diode component comprises at least two conductionsFirst, at least one emitting semiconductor crystal grain and at least one wire, have a fluting between two conductive units, shouldEmitting semiconductor crystal grain is arranged at a conductive unit wherein, and this wire is connected across this emitting semiconductor crystal grainAnd between in other conductive unit one, this light penetrated bed be coated this emitting semiconductor crystal grain, described inMultiple wires are also filled in this fluting at least partly with in conjunction with described multiple conductive units.
The invention provides a kind of light source module, comprise: a substrate; And at least one above-mentioned luminous halfConductor element, this luminescent diode component is arranged at a side of this substrate, and is electrically connected on this substrate.
The present invention more provides a kind of preparation method of luminescent diode component, comprises the following step: a) in oneThe first conductive layer forms at least one fluting; B) at least one emitting semiconductor crystal grain is set in this first conductive layer,This fluting exposes this emitting semiconductor crystal grain at least partly; C) form a smooth penetrated bed, this light penetrated bed withThis first conductive layer coordinates coated this emitting semiconductor crystal grain.
Utilize light element and the light of the luminescent diode component that preparation method of the present invention completes to penetrateLayer fitted seal emitting semiconductor crystal grain, can effectively reduce the area of luminescent diode component and can carryRise the insulation effect of luminescent diode component.
Brief description of the drawings
Fig. 1 is the cutaway view of existing luminescent diode component.
The making stream of the preparation method of the luminescent diode component that Fig. 2 A-Fig. 2 J is first embodiment of the inventionJourney schematic diagram.
The making of the preparation method of the luminescent diode component that Fig. 3 A-Fig. 3 Z is second embodiment of the inventionSchematic flow sheet.
Fig. 4 A is the cutaway view of the light source module of first embodiment of the invention.
Fig. 4 B is the cutaway view of the light source module of second embodiment of the invention.
Fig. 4 C is the cutaway view of the light source module of third embodiment of the invention.
Fig. 5 is the cutaway view of the lighting device of first embodiment of the invention.
Fig. 6 A is the cutaway view of the light source module of fourth embodiment of the invention.
Fig. 6 B is the cutaway view of the light source module of fifth embodiment of the invention.
Wherein, description of reference numerals is as follows:
10,20 first conductive layers
100,200 flutings
102,206 upper surfaces
11,21 conductive units
12,30 emitting semiconductor crystal grain
13 wires
120,300 substrates
122,302N type gallium nitride
124,304 multiple quantum well layers
126,306P type gallium nitride layer
128a, 128b, 308a, 308b connection gasket
130,310 semiconductor layers
14,34 smooth penetrated beds
202 second conductive layers
204 intermediary layers
206 upper surfaces
208 lower surfaces
22 shielding layers
24 insulating barriers
26 temporary substrates
28 stick together part
32 barricades
36 light wavelength conversion materials
40a, 40b, 40c, 50 substrates
402a, 402b, 404c circuit patterns
402c insulating bodies
45 printing opacity lids
52 connecting lines
54 megohmite insulants
56 conductive projections
800 first wire supports
802 crystal grain bearing supports
804 second wire supports
806 LED crystal particles
808 insulators
810 wires
812 crystal bonding areas
814 printing opacity colloids
Detailed description of the invention
Coordinate consult Fig. 2 A to Fig. 2 J, for proposed by the invention for the making side of luminescent diode componentThe making schematic flow sheet of one embodiment of method, wherein luminescent diode component for example can be and (but does not limitIn) light emitting diode.
As shown in Figure 2 A, first provide one first conductive layer 10, the first conductive layers 10 to be roughly dull and stereotypedShape also uses the material with good electrical conductive properties to be made, as: metal, be made, this metalMaterial can be for example copper. With preferred embodiment, the thickness t of the first conductive layer 10 is greater than 5 microns(micrometer, μ m), uses the radiating effect that improves this luminescent diode component.
On the first conductive layer 10, form subsequently a fluting 100, as shown in Figure 2 B, fluting 100 canMode is formed on the first conductive layer 10 to utilize punch die (stamping), etching or etch partially etc. Fluting 100Quantity can be one or more, in the present embodiment, fluting 100 taking two for example illustrate, stillMust know that this quantity is only an embodiment, is not restriction of the present invention. This two fluting 100 is roughly parallelRow, but not as limit, as shown in Figure 2 C.
From the above, at least one emitting semiconductor crystal grain 12 is arranged at the first conductive layer 10 one on tableFace 102 also forms and is electrically connected with the first conductive layer 10, as shown in Fig. 2 D, Fig. 2 E and Fig. 2 G. Send outThe quantity of photosemiconductor crystal grain 12 can be one or more, in the present embodiment, with two luminous halfConductor crystal grain 12 is example explanation, and emitting semiconductor crystal grain 12 is LED crystal particle. Luminously partly leadBody crystal grain 12 comprises multiple semiconductor layers 130 and two connection gasket 128a and 128b, connection gasket 128a and128b is arranged at semiconductor layer 130 tops, makes to form horizontal (lateral) structure; When actual enforcement,Emitting semiconductor crystal grain 12 also can be designed as rectilinear (vertical) structure, make two connection gasket 128a and128b is positioned at the both sides of semiconductor layer 130. In the present embodiment, semiconductor layer 130 comprises sequentially to be arrangedA substrate 120, a n type gallium nitride (GalliumNitride, GaN) 122, a multiple quantum well (multipleQuantumwell, MQW) layer 124 and a P type gallium nitride layer 126, connection gasket 128a is arranged at this NOn type gallium nitride layer 122, and connection gasket 128b is arranged on this P type gallium nitride layer 126, and luminous halfConductor crystal grain 12 can be for sending blue light; When actual enforcement, can be adjusted half according to actual demand and restrictionThe stacked structure of conductor layer 130 and go out light color.
As shown in Figure 2 D, emitting semiconductor crystal grain 12 is to cover crystalline form to be arranged at the first conductive layer10 upper surface 102, and two connection gasket 128a, the 128b of emitting semiconductor crystal grain 12 are located at respectivelySlot 100 both sides being connected with the first conductive layer 10. Secondly, fluting 100 is partly exposed to luminousThe scope that arranges of semiconductor grain 12. Two connection gasket 128a and the 128b of emitting semiconductor crystal grain 12 canWith by welding (soldering) technique to form and to be electrically connected with the first conductive layer 10, or luminously partly leadTwo connection gasket 128a of body crystal grain 12 and 128b are also by coating elargol (Agglue) or electric silica gelEtc. (silicone) mode is to form and to be electrically connected with the first conductive layer 10.
As shown in Fig. 2 E, Fig. 2 F and Fig. 2 G, two connection gasket 128a of emitting semiconductor crystal grain 12 and128b also can be by many wires 13 to be electrically connected to the first conductive layer 10 of fluting 100 both sides; ItsThe setting of middle emitting semiconductor crystal grain 12 on the first conductive layer 10 is in the direction opposite sending out shown in Fig. 2 DPhotosemiconductor crystal grain 12. Be noted that two connection gasket 128a and 128b of emitting semiconductor crystal grain 12Must be electrically connected on respectively the first conductive layer 10 of fluting 100 both sides, to avoid short circuit phenomenon to produce.
As shown in Fig. 2 E and Fig. 2 F, the first conductive layer 10 comprises four flutings 100, emitting semiconductorCrystal grain 12 is arranged between wantonly two flutings 100, and one end of wire 13 is connected in emitting semiconductor crystal grain 12Connection gasket 128a and 128b, and cross over fluting and 100 be connected in the first conductive layer 10. As Fig. 2 G instituteShow, emitting semiconductor crystal grain 12 is arranged at the first conductive layer 10 of fluting 100 1 sides, and connection gasket 128aBe electrically connected thereon by wire 13, it is another that connection gasket 128b is electrically connected to fluting 100 by wire 13The first conductive layer 10 of one side. Be noted that in the time that emitting semiconductor crystal grain is rectilinear structure positionCan directly be electrically connected on the first conductive layer 10 of fluting one side in the connection gasket of semiconductor layer one side, positionBe electrically connected to the first conduction of fluting opposite side by a wire in the connection gasket of semiconductor layer opposite sideLayer.
Afterwards, as shown in Fig. 2 H, form a smooth penetrated bed 14, light penetrated bed 14 is coated luminous partly leadsBody crystal grain 12, and be exposed in the fluting 100 that emitting semiconductor crystal grain 12 arranges scope and fill out by partBe charged in fluting 100, meaning be light penetrated bed 14 coordinate with the first conductive layer 10 closely coated luminous partlyConductor crystal grain 12, and in conjunction with the first conductive layer 10 and emitting semiconductor crystal grain 12. Light penetrated bed 14Be printing opacity megohmite insulant goodly, as: silica gel, so that good insulation effect to be provided. In the present embodiment,It is hemispherical that light penetrated bed 14 is roughly, and can effectively improve and get light effect, when actual enforcement, can comply withThe external form of light penetrated bed 14 is adjusted in actual demand and restriction. Light penetrated bed 14 can use injecting glue to becomeType (Molding), some glue (Dispensing) or the modes such as lens (PlacingLens) are set form. By on instituteState, light penetrated bed 14 not only can be in conjunction with the first conductive layer 10 and emitting semiconductor crystal grain 12, and the while canTo protect emitting semiconductor crystal grain 12, to provide good insulation effect and raising to get light effect.
Finally, make to form multiple luminously partly lead along edge cuts first conductive layer 10 of light penetrated bed 14Body member; Side by side, the first conductive layer 10 that is positioned at each emitting semiconductor crystal grain 12 belows is also distinguishedFor at least two conductive units 11, and wherein between wantonly two conductive units 11, there is this fluting 100, as figureShown in 2I. Secondly, between wantonly two conductive units 11, neither form and connect, use and avoid emitting semiconductorElement produces short circuit phenomenon.
Therefore, shown in Fig. 2 I, be just an embodiment of luminescent diode component proposed by the invention. By thisKnown shown in figure, this luminescent diode component comprises at least two conductive units 11, an emitting semiconductor crystal grain12 and a smooth penetrated bed 14. Two conductive units 11 are to use conductive material to be made, with better enforcementExample, two conductive unit 11 thickness t are greater than 5 microns, to reach good thermal characteristics, and two conductionsBetween unit 11, there is a fluting 100. Emitting semiconductor crystal grain 12 is connected across two conductive units 11 bagContaining multiple semiconductor layers 130 and two connection gasket 128a and 128b, two connection gasket 128a and 128b are respectivelyBe electrically connected on two conductive units 11, wherein the surface area of the first conductive layer 10 is more than or equal to emitting semiconductorThe surface area of crystal grain 12. Coated this emitting semiconductor crystal grain 12 of light penetrated bed 14 is also filled at least partlyIn this fluting 100, use in conjunction with this emitting semiconductor crystal grain 12 and conductive unit 11, simultaneously protectionEmitting semiconductor crystal grain 12 also provides good insulation effect and raising to get light effect. With preferred embodiment, emitting semiconductor crystal grain 12 is directly arranged on conductive unit 11, and conductive unit 11Thickness t is greater than 5 microns, the heat energy producing when diversion emitting semiconductor crystal grain 12 is lighted post.
In addition, the emitting semiconductor crystal grain 12 of luminescent diode component also can be arranged at leading whereinElectric unit 11, emitting semiconductor crystal grain 12 is electrically connected on another conductive unit by least one wire 1311, as shown in Fig. 2 J. Wire 13 is connected across connection gasket 128a, the 128b of emitting semiconductor crystal grain 12And between conductive unit 11, to be electrically connected this emitting semiconductor crystal grain 12 and conductive unit 11.
Coordinate consult Fig. 3 A to Fig. 3 Z, for proposed by the invention for the making side of luminescent diode componentThe making schematic flow sheet of another embodiment of method, wherein luminescent diode component for example can be and (but does not limitDue to) light emitting diode.
As shown in Figure 3A, first provide one first conductive layer 20; With preferred embodiment, first leadsElectricity layer 20 is roughly tabular and thickness t is greater than 5 microns, makes to arrange emitting semiconductor crystalline substance thereonThe heat energy producing when grain is lighted can be rapidly by diversion. The first conductive layer 20 comprises two second conductive layers202 and an intermediary layer 204; Intermediary layer 204 between two second conductive layers 202, the second conductive layer202 can be for example copper, and intermediary layer 204 is the insulation material with flexible character, as: pi(polyimide, PI). The first conductive layer 20 also comprises a upper surface 206 and under upper surfaceSurface 208. When actual enforcement, can be adjusted according to actual demand or restriction the composition of the first conductive layer 20Stacked structure, certainly, the first conductive layer 20 also can only comprise the second conductive layer 202.
As shown in Figure 3 B, wherein at least one in upper surface 206 and the lower surface 208 of the first conductive layer 20Person forms a shielding layer 22. In the present embodiment, shielding layer 22 is formed at first conductive layer 20 simultaneouslyUpper surface 206 and lower surface 208. With preferred embodiment, shielding layer 22 can be for having light reflectionThe protective layer of the first conductive layer 20 physical strengths maybe can be improved in the reflecting layer of effect.
On resulting structures, form subsequently multiple flutings 200, fluting 200 can be designed as certain patterns,As shown in the 3rd C figure; Fluting 200 can be formed at first by punch die, etching or the mode such as etch partiallyOn conductive layer 20. Fluting 200 one second conductive layers 202 that can only run through wherein, as shown in Figure 3 D,Or fluting 200 can run through the second conductive layer 202 and intermediary layer 204 simultaneously, as shown in Fig. 3 E. ?Hereinafter, for convenience of description, 200 run through the second conductive layer 202 and intermediary layer 204 to slot simultaneouslyAs illustrative example, but this is not restriction of the present invention. Moreover the first conductive layer 20 also can pass throughFluting 200 and distinguish become multiple conductive units that are separated from each other 21, as shown in the 3rd F figure.
At this, be noted that: hereinafter, when the first conductive layer 20 200 is distinguished by slottingWhile becoming multiple independent blocks disconnected from each other, each independent blocks will be called conductive unit 21.
Below resulting structures, form subsequently an insulating barrier 24, as shown in Fig. 3 G; 24 tools of insulating barrierSome thickness can be designed to be less than 100 microns, but this thickness is only embodiment, is not necessity of the present inventionRestriction.
Then resulting structures is arranged on a temporary substrate 26, as shown in Fig. 3 H. The first conductive layer20 and temporary substrate 26 between can also comprise one and stick together part 28, sticking together part 28 is preferably pyrolysis glueBand (ThermalReleaseTape, TRT).
Afterwards, multiple emitting semiconductor crystal grain 30 is arranged to the first conductive layer 20 and is electrically connected on firstConductive layer 20, as shown in Fig. 3 I, and fluting 200 exposes at least part emitting semiconductor crystal grain 30, asShown in Fig. 3 J. Emitting semiconductor crystal grain 30 comprise multiple semiconductor layers 310 and two connection gasket 308a and308b; In the present embodiment, semiconductor layer 310 can be for sending blue light and comprising a substrate of sequentially arranging300, a n type gallium nitride 302, a multiple quantum well layer 304 and a P type gallium nitride layer 306, connection gasket308a is formed on n type gallium nitride 302, and connection gasket 308b is formed on P type gallium nitride layer 306,Make to form horizontal configuration; When actual enforcement, can be adjusted semiconductor layer 310 according to actual demand and restrictionStacked structure and go out light color. Certainly, emitting semiconductor crystal grain 30 also can be designed as rectilinear knotStructure. .
As shown in Fig. 3 I, emitting semiconductor crystal grain 30 is arranged at the first conductive layer 20 to cover crystalline formUpper surface 206, and two connection gasket 308a and the 308b of emitting semiconductor crystal grain 30 are connected across out respectivelyThe first conductive layer 20 of groove 200 both sides. Two connection gasket 308a and 308b of emitting semiconductor crystal grain 30Can engage (fluxeutecticbonding) by welding, coating elargol, electric silica gel, scaling powder eutecticTechnology or directly eutectic engage mode and first conductive layer 20 shapes such as (directeutecticbonding) technologyBecome to be electrically connected. As shown in Fig. 3 J, emitting semiconductor crystal grain 12 can be by having opening of certain patternsGroove 100 connects to form series, parallel or connection in series-parallel.
As shown in Fig. 3 K to Fig. 3 N, form the light penetrated bed 34 of a coated emitting semiconductor crystal grain 30,And remove portion the first conductive layer 20 distinguishes the first conductive layer 20 to become multiple conductive units 21, luminousSemiconductor grain 30 makes to form each other connection in series-parallel by conductive unit 21. Light penetrated bed 34 and first is ledElectricity layer 20 coordinates closely coated emitting semiconductor crystal grain 30, and by exposing at least partly emitting semiconductorThe fluting 200 of crystal grain 30 flows into emitting semiconductor crystal grain 30 belows, with in conjunction with the first conductive layer 20. LightPenetrated bed 34 is preferably printing opacity megohmite insulant, so that good insulation effect to be provided. As Fig. 3 K and figureShown in 3L, light penetrated bed 34 is coated respectively this emitting semiconductor crystal grain 30 respectively, makes respectively this luminously partly leadBody crystal grain 30 forms monocrystalline packing forms; Light penetrated bed 34 be roughly be coated respectively hemispherically this luminous halfConductor crystal grain 30, gets optical efficiency to improve. As shown in Fig. 3 M and Fig. 3 N, light penetrated bed 34 wraps simultaneouslyCover multiple emitting semiconductor crystal grain 30 and cover the first conductive layer 20, to form polycrystalline packing forms; LightDistance between the upper surface of penetrated bed 34 and the first conductive layer 20 is along with away from emitting semiconductor crystal grain 30And successively decrease, the saturating layer 34 of this light is roughly and is coated emitting semiconductor crystal grain 30 hemispherically, by this to carryHeight is got optical efficiency.
Light penetrated bed 34 can use injecting glue moulding, put glue or the modes such as lens are set forms and is coated and send outPhotosemiconductor crystal grain 30; When light penetrated bed 30 is while forming by a glue mode, can be in the first conductive layer20 tops are pre-formed a barricade 32 around emitting semiconductor crystal grain 20, as shown in Fig. 3 O. Barricade32 make light penetrated bed 34 roughly be hemispherical in order to limit function to be provided, to use, and get optical efficiency to improve.
Moreover, in the first conductive layer 20 by 200 enforcements of dividing into multiple conductive units 21 of slottingIn example, the surface area that is positioned at the conductive unit 21 of each emitting semiconductor crystal grain 30 belows must be more than or equal toThe surface area of emitting semiconductor crystal grain 30. In addition, as shown in Fig. 3 P and Fig. 3 Q, light penetrated bed 34 is sameTime coated emitting semiconductor crystal grain 30 and conductive unit 21 lateral margin, to reach better insulation effect,And the distance between the upper surface of light penetrated bed 34 and conductive unit 21 is consistent.
As shown in Fig. 3 R, the distance between the upper surface of light penetrated bed 34 and conductive unit 21 is along with farSuccessively decrease from emitting semiconductor crystal grain 30, make this light thoroughly layer 34 be roughly to be coated hemispherically and luminously partly leadBody crystal grain 30, gets optical efficiency to improve by this. In addition, emitting semiconductor crystal grain 30 also can be by leadingElectric unit 21 forms series-parallel form, as shown in Fig. 3 S; But this connected mode is only an embodiment,It not necessary restriction of the present invention.
From the above, a light wavelength conversion material 36 is set in inner surface or the outer surface of light penetrated bed 34In or its combination, light wavelength conversion material 34 can be fluorescent material, quantum dot fluorescence powder (QuantumOr quantum well film (QuantumWellFilm) DotPhosphor). Emitting semiconductor crystal grain 30 sendsBy after light wavelength conversion material 36, there is wavelength with light wavelength conversion material 36 and change and produce in lightOne light wavelength conversion line. In the present embodiment, emitting semiconductor crystal grain 30 can be for sending blue light, light waveLong transformational substance 36 can produce gold-tinted after exciting; The part blue light that emitting semiconductor crystal grain 30 sends withThere is wavelength and change and produce light wavelength conversion line (gold-tinted), light wavelength conversion line in light wavelength conversion material 36With after other parts blue light mixed light, can produce white light. Light wavelength conversion material 36 can arrange to be adjacent to and send outPhotosemiconductor crystal grain 30, as shown in Fig. 3 T, wherein light wavelength conversion material 36 can be formed at light is setAlso coated emitting semiconductor crystal grain 30 before penetrated bed 34, meaning is that light wavelength conversion material 36 arranges vicinityIn emitting semiconductor crystal grain 30. Or light wavelength conversion material 36 also can form in light penetrated bed 34After again row be arranged on light penetrated bed 34, meaning is that light wavelength conversion material 36 setting is away from and luminously partly leadsBody crystal grain 30, as shown in the 3rd U figure. Or light wavelength conversion material 36 also can be distributed in equablyLight penetrated bed 34 inside, as shown in the 3rd V figure, wherein, this light wavelength conversion material 36 is directly mixedClose in light penetrated bed 36, and by coated emitting semiconductor crystal grain 30 of mode such as some glue or injecting glue moulding.
Finally, cutting make to form multiple luminescent diode components and remove temporary substrate 26, as Fig. 3 W extremelyShown in Fig. 3 W. Side by side, the first conductive layer 20 that is positioned at each emitting semiconductor crystal grain 30 belows also byDivide at least two conductive units 21, and wherein between wantonly two conductive units 21, there is fluting 200. ItsInferior, between wantonly two conductive units 21, neither form and connect, use and avoid luminescent diode component generation shortRoad phenomenon.
Luminescent diode component as shown in Fig. 3 W, the surface area of conductive unit 21 is greater than light penetrated bed34 are covered in the area of conductive unit 21; Secondly, also can remove insulating barrier 24 bending conduction list simultaneouslyUnit 21, to reach convenient function of pegging graft, as shown in Fig. 3 X.
Luminescent diode component as shown in Fig. 3 Y, the surface area of conductive unit 21 is substantially equal to light and penetratesLayer 34 covers the area of conductive unit 21.
As shown in Fig. 3 Z, light penetrated bed 34 is coated multiple emitting semiconductor crystal grain 30 simultaneously, many to formThe luminescent diode component of brilliant encapsulation. Secondly, multiple emitting semiconductor crystal grain 30 can be single by conductionUnit 21 forms series-parallel form.
Therefore, luminescent diode component proposed by the invention comprises at least two conductive units 21, at least oneEmitting semiconductor crystal grain 30 and a smooth penetrated bed 34. Two conductive units 21 are roughly tabular and its thicknessBe greater than 5 microns, between this two conductive unit 21, there is a fluting 200.
Emitting semiconductor crystal grain 30 be connected across this two conductive unit 21 and comprise multiple semiconductor layers 310 andTwo connection gasket 308a and 308b, it is single that two connection gasket 308a and 308b are electrically connected on respectively described two conductionsUnit 21, wherein the surface area of the first conductive layer 20 is more than or equal to the surface area of emitting semiconductor crystal grain 30.
The coated emitting semiconductor crystal grain 30 of light penetrated bed 34 is also filled in this fluting 200 at least partly,Use in conjunction with conductive unit 21 and emitting semiconductor crystal grain 30, protect emitting semiconductor crystal grain 30 also simultaneouslyProvide good insulation effect and raising to get light effect. It is single that light penetrated bed 34 can fully cover conductionThe upper surface 206 of unit 21, as shown in Fig. 3 Y. Secondly, luminescent diode component optionally comprisesOne shielding layer 22, this shielding layer 22 is arranged at upper surface 206 and a lower surface for conductive unit 21208 wherein at least one, wherein lower surface 208 is in contrast to upper surface 206.
Luminescent diode component more optionally comprises a light wavelength conversion material 36, is arranged at this light and wearsIn layer 34, the light that emitting semiconductor crystal grain 30 sends sends ripple by light wavelength conversion material 36 thoroughlyLong conversion produces light wavelength conversion line, and wherein light wavelength conversion material 36 can arrange and be adjacent to luminous halfConductor crystal grain 30 or be away from emitting semiconductor crystal grain 30, or light wavelength conversion material 36 also can be equalBe mixed in light penetrated bed 34 evenly.
Moreover light penetrated bed 34 can be coated multiple emitting semiconductor crystal grain 20 simultaneously, and fullyCover the upper surface 206 of conductive unit 21 lateral margin of coated with conductive unit 21, as shown in Fig. 3 Z.Luminescent diode component also optionally comprises an insulating barrier 24, is positioned at this shielding layer 22 belows, lightPenetrated bed 34 can cover the upper surface 206 of conductive unit 21 partially, as shown in Fig. 3 W. LuminousSemiconductor element also optionally bends conductive unit 21 to reach convenient effect of pegging graft, as Fig. 3 XShown in.
Aforesaid luminescent diode component can coordinate with a substrate 40a formation one light source module, as Fig. 4 AShown in; For convenience of description, using the luminescent diode component shown in Fig. 3 Y as illustrative example. Substrate40a can be circuit board, and on it, has been pre-formed at least one circuit patterns 402a. At least one luminous halfIt is upper that conductor element is arranged at substrate 40a, and the conductive unit 21 of luminescent diode component is electrically connected on electricityRoad pattern 402a. The quantity of luminescent diode component can be one or more, in the present embodiment, sends outOptical semiconductor is taking two as example, but must know that this quantity is only an embodiment, be not of the present invention mustLimit; Secondly, two luminescent diode components form by circuit patterns 402a the form that is electrically connected in series,When actual enforcement, two luminescent diode components also can form electrical connection in parallel by circuit patterns 402aForm.
Moreover light source module can be pasted to a heat abstractor, as fin, send out with diversion postThe heat energy producing when optical semiconductor is lighted. Or, as shown in Figure 4 B, the substrate 40b of light source moduleItself is heat abstractor. Substrate 40b has been pre-formed at least one circuit style 402b, emitting semiconductorThe conductive unit 21 of element is electrically connected on circuit style 402b. Thus, luminescent diode componentThe heat energy producing while lighting can be passed in outside air by substrate 40b rapidly.
As shown in Figure 4 C, circuit patterns 404c also can be arranged at the upper surface of substrate 40c extraly,And between two adjacent circuit patterns 404c, an insulating bodies 402c is set, uses and promote the effect that is electrically insulatedReally. Luminescent diode component is arranged at substrate 40c and conductive unit 21 is electrically connected on circuit patterns 404c.
Aforesaid light source module can coordinate with a printing opacity lid 45 formation one lighting device, as Fig. 5 instituteShow, and can throw light on for indoor or outdoors. Lighting device comprises a light source module as shown in Figure 4 CAnd a printing opacity lid 45, printing opacity lid 45 is combined luminescent diode component can be positioned at substrate 40cBetween printing opacity lid 45 and substrate 40c, luminescent diode component is preferably towards printing opacity lid 45Direction emits beam. Moreover, wherein at least one of the inner surface of this printing opacity lid 45 or outer surfaceCan include light wavelength conversion material, as fluorescent material, send out with the light sending with luminescent diode componentAfter raw wavelength conversion, produce light wavelength conversion line, to reach the effect of Color Conversion; Certainly, optical wavelength turnsChange and also can directly be arranged in printing opacity lid 45.
As shown in Figure 6A, in the time that luminescent diode component comprises insulating barrier 24, be arranged on substrate 50Multiple luminescent diode components must be electrically connected to form by many connecting lines 52. But, connectWiring 52 also can be replaced by multiple conductive projections 56, as shown in Figure 6B, makes two emitting semiconductor unitsPart reaches the effect of electric connection. In addition, each conductive projection 56 can optionally pass through an insulantMatter 54 supports are stood on substrate 50, and the conductive unit 21 of two adjacent luminescent diode components is contacted,And make two luminescent diode components form electric connection. Certainly the light source module shown in Fig. 6 A and Fig. 6 B,Also can be combined to form one with a printing opacity lid can be for the lighting device of indoor or outdoors illumination.
Comprehensive the above, utilize the leaded light of the luminescent diode component that preparation method of the present invention completesUnit and light penetrated bed fitted seal emitting semiconductor crystal grain, can reduce luminescent diode component effectivelyArea and can promote the insulation effect of luminescent diode component; Secondly, the thickness of conductive unit is greater than 5Micron and surface area are more than or equal to the surface area of emitting semiconductor crystal grain, make to arrange thereon luminous halfThe heat energy producing when conductor crystal grain is lighted can be rapidly by diversion, and reduces luminescent diode component and electricityDegree of difficulty when road plate or the welding of other sheet material.
But the above is only preferred embodiment of the present invention, can not limit scope of the invention process,Be all equalization variation and modifications etc. of doing according to the claims in the present invention book, all should still belong to patent of the present inventionThe category of covering scope intention protection.
Claims (29)
1. a luminescent diode component, comprises:
At least two conductive units, have a fluting between described conductive unit;
At least one emitting semiconductor crystal grain, is connected across described multiple conductive unit; And
One smooth penetrated bed, coated described emitting semiconductor crystal grain is also filled in this fluting at least partly with knotClose described conductive unit;
Wherein, this luminescent diode component does not comprise the substrate of the below that is arranged at least two conductive units.
2. luminescent diode component as claimed in claim 1, wherein the thickness of this conductive unit is greater than 5Micron.
3. luminescent diode component as claimed in claim 1, the surface of wherein said multiple conductive unitsThe long-pending surface area that is more than or equal to described emitting semiconductor crystal grain.
4. luminescent diode component as claimed in claim 1, wherein this luminescent diode component also comprisesOne be arranged in this light penetrated bed light wavelength conversion material.
5. luminescent diode component as claimed in claim 1, wherein this luminescent diode component also comprisesOne shielding layer, this shielding layer be arranged at a upper surface of this conductive unit and a lower surface at least wherein itOne, this lower surface is in contrast to this upper surface.
6. luminescent diode component as claimed in claim 1, wherein this luminescent diode component also comprisesOne is arranged at the insulating barrier of this conductive unit below.
7. luminescent diode component as claimed in claim 6, wherein the thickness of this insulating barrier is less than 100Micron.
8. luminescent diode component as claimed in claim 1, wherein this luminescent diode component also comprisesOne barricade, this dams setting is in this conductive unit and around this emitting semiconductor crystal grain, and this light penetrated bed is establishedBe placed in this barricade.
9. luminescent diode component as claimed in claim 1, wherein this conductive unit comprises two second and leadsElectricity layer and an insulating barrier being arranged between described two second conductive layers, this fluting at least run through wherein oneThe second conductive layer.
10. luminescent diode component as claimed in claim 1, wherein this light penetrated bed partly coversOne upper surface of described multiple conductive units.
11. luminescent diode components as claimed in claim 1, wherein this light penetrated bed fully coversOne upper surface of described multiple conductive units.
12. luminescent diode components as claimed in claim 11, wherein this light penetrated bed coated institute simultaneouslyState all lateral margins of emitting semiconductor crystal grain and multiple conductive units.
13. luminescent diode components as claimed in claim 1, wherein this luminescent diode component comprisesMultiple conductive units and multiple emitting semiconductor crystal grain, have a fluting between wantonly two conductive units, eachPhotosemiconductor crystal grain is connected across wantonly two conductive units, and described multiple emitting semiconductor crystal grain is by described multipleConductive unit forms connection in series-parallel and connects.
14. 1 kinds of luminescent diode components, comprise:
At least two conductive units, have a fluting between described conductive unit;
At least one emitting semiconductor crystal grain, is arranged at a conductive unit wherein;
At least one wire, be connected across in this emitting semiconductor crystal grain and other conductive unit one itBetween; And
One smooth penetrated bed, coated this emitting semiconductor crystal grain, this wire are also filled in this fluting at least partlyIn with in conjunction with described multiple conductive units;
Wherein, this luminescent diode component does not comprise the substrate of the below that is arranged at least two conductive units.
15. luminescent diode components as claimed in claim 14, wherein the thickness of this conductive unit is greater than5 microns.
16. luminescent diode components as claimed in claim 14, the table of wherein said multiple conductive unitsArea is more than or equal to the surface area of this emitting semiconductor crystal grain.
17. luminescent diode components as claimed in claim 14, wherein this light penetrated bed at least in partCover a upper surface of described multiple conductive units.
18. luminescent diode components as claimed in claim 14, wherein this light penetrated bed coated institute simultaneouslyState all lateral margins of emitting semiconductor crystal grain and multiple conductive units.
19. 1 kinds of light source modules, comprise:
One substrate; And
At least one luminescent diode component as described in any one in claim 1 to 18, this is luminous half years oldConductor element is arranged at a side of this substrate, and is electrically connected on this substrate.
20. light source modules as claimed in claim 19, wherein this substrate is heat abstractor or circuit board.
The preparation method of 21. 1 kinds of luminescent diode components, comprises:
A) provide one first conductive layer;
B) form at least one fluting by punch die, etching or the mode that etches partially in this first conductive layer;
C) at least one emitting semiconductor crystal grain being set first leads in this first conductive layer and with this of fluting both sidesElectricity layer forms and is electrically connected; And
D) form a smooth penetrated bed, coated this emitting semiconductor crystal grain of this light penetrated bed also connects this and first leadsElectricity layer, and this light penetrated bed is filled in this fluting at least partly;
Wherein, this luminescent diode component making does not comprise the substrate that is arranged on the first conductive layer below.
The preparation method of 22. luminescent diode components as claimed in claim 21, wherein this is luminously partly ledBody crystal grain is connected across the first conductive layer of fluting both sides, and this fluting exposes this emitting semiconductor crystalline substance at least partlyGrain, this light penetrated bed coordinates closely coated this emitting semiconductor crystal grain with this first conductive layer.
The preparation method of 23. luminescent diode components as claimed in claim 21, wherein this preparation methodAlso comprise:
In a upper surface of this first conductive layer and a lower surface at least one of them forms a shielding layer.
The preparation method of 24. luminescent diode components as claimed in claim 21, wherein this preparation methodAlso comprise:
Form an insulating barrier in this first conductive layer below.
The preparation method of 25. luminescent diode components as claimed in claim 21, wherein this preparation methodAlso comprise:
One light wavelength conversion material coated this emitting semiconductor crystal grain are set.
The preparation method of 26. luminescent diode components as claimed in claim 21, wherein this preparation methodAlso comprise:
One light wavelength conversion material is set in light penetrated bed, and this light wavelength conversion material is distributed in equablyIn this light penetrated bed.
The preparation method of 27. luminescent diode components as claimed in claim 21, wherein this preparation methodAlso comprise:
One optical wavelength converting layer is set on this light penetrated bed.
The preparation method of 28. luminescent diode components as claimed in claim 21, wherein, in step cAfterwards, also comprise a step c1, at least one wire is set in this emitting semiconductor crystal grain and fluting one sideBetween this first conductive layer, this emitting semiconductor crystal grain is arranged at this first conductive layer of fluting opposite side.
The preparation method of 29. luminescent diode components as claimed in claim 21, wherein this preparation methodWherein, between step b and step c, also comprising: below this first conductive layer, a temporary substrate is set;After steps d, also comprise: cutting makes to form multiple luminescent diode components and removes this temporary substrate.
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Effective date of registration: 20180928 Address after: No. 841-899, Min An Avenue, Tong Tang, Tongan District, Xiamen, Fujian Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: China Taiwan Taoyuan County Patentee before: Delta Optoelectronics Inc. |