JP2008235555A - 電子装置の製造方法及び基板及び半導体装置 - Google Patents

電子装置の製造方法及び基板及び半導体装置 Download PDF

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Publication number
JP2008235555A
JP2008235555A JP2007072706A JP2007072706A JP2008235555A JP 2008235555 A JP2008235555 A JP 2008235555A JP 2007072706 A JP2007072706 A JP 2007072706A JP 2007072706 A JP2007072706 A JP 2007072706A JP 2008235555 A JP2008235555 A JP 2008235555A
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JP
Japan
Prior art keywords
conductive layer
layer
insulating layer
bump
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007072706A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008235555A5 (https=
Inventor
Kiyohiro Machida
洋弘 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2007072706A priority Critical patent/JP2008235555A/ja
Priority to KR1020080017659A priority patent/KR20080085682A/ko
Priority to US12/044,397 priority patent/US7829378B2/en
Priority to TW097109291A priority patent/TW200839989A/zh
Priority to CNA2008100857438A priority patent/CN101271853A/zh
Publication of JP2008235555A publication Critical patent/JP2008235555A/ja
Publication of JP2008235555A5 publication Critical patent/JP2008235555A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • H10W70/687Shapes or dispositions thereof comprising multiple insulating layers characterized by the outer layers being for protection, e.g. solder masks, or for protection against chemical or mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007072706A 2007-03-20 2007-03-20 電子装置の製造方法及び基板及び半導体装置 Pending JP2008235555A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007072706A JP2008235555A (ja) 2007-03-20 2007-03-20 電子装置の製造方法及び基板及び半導体装置
KR1020080017659A KR20080085682A (ko) 2007-03-20 2008-02-27 전자 장치의 제조 방법, 기판 및 반도체 장치
US12/044,397 US7829378B2 (en) 2007-03-20 2008-03-07 Method of manufacturing electronic device, substrate and semiconductor device
TW097109291A TW200839989A (en) 2007-03-20 2008-03-17 Method of manufacturing electronic device, substrate and semiconductor device
CNA2008100857438A CN101271853A (zh) 2007-03-20 2008-03-20 制造电子器件、基板和半导体器件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007072706A JP2008235555A (ja) 2007-03-20 2007-03-20 電子装置の製造方法及び基板及び半導体装置

Publications (2)

Publication Number Publication Date
JP2008235555A true JP2008235555A (ja) 2008-10-02
JP2008235555A5 JP2008235555A5 (https=) 2010-02-12

Family

ID=39773857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007072706A Pending JP2008235555A (ja) 2007-03-20 2007-03-20 電子装置の製造方法及び基板及び半導体装置

Country Status (5)

Country Link
US (1) US7829378B2 (https=)
JP (1) JP2008235555A (https=)
KR (1) KR20080085682A (https=)
CN (1) CN101271853A (https=)
TW (1) TW200839989A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5064158B2 (ja) * 2007-09-18 2012-10-31 新光電気工業株式会社 半導体装置とその製造方法
TWI394249B (zh) * 2008-11-04 2013-04-21 欣興電子股份有限公司 封裝基板結構及其製法
US8946891B1 (en) 2012-09-04 2015-02-03 Amkor Technology, Inc. Mushroom shaped bump on repassivation
KR101974191B1 (ko) * 2012-11-29 2019-04-30 에스케이하이닉스 주식회사 반도체 장치 및 그 형성방법
CN109637995B (zh) * 2013-09-03 2022-11-22 日月光半导体制造股份有限公司 基板结构、封装结构及其制造方法
CN104617001B (zh) * 2014-12-30 2017-08-11 通富微电子股份有限公司 半导体再布线封装工艺
US10636745B2 (en) * 2017-09-27 2020-04-28 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
US10332757B2 (en) * 2017-11-28 2019-06-25 Advanced Semiconductor Engineering, Inc. Semiconductor device package having a multi-portion connection element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313985A (ja) * 2002-04-05 2002-10-25 Oki Electric Ind Co Ltd チップサイズパッケージの製造方法
JP2005044899A (ja) * 2003-07-24 2005-02-17 Daiwa Kogyo:Kk 層間接続構造の形成方法及び多層配線基板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592736A (en) * 1993-09-03 1997-01-14 Micron Technology, Inc. Fabricating an interconnect for testing unpackaged semiconductor dice having raised bond pads
US6809421B1 (en) * 1996-12-02 2004-10-26 Kabushiki Kaisha Toshiba Multichip semiconductor device, chip therefor and method of formation thereof
US5929521A (en) * 1997-03-26 1999-07-27 Micron Technology, Inc. Projected contact structure for bumped semiconductor device and resulting articles and assemblies
JP4133370B2 (ja) * 2003-01-28 2008-08-13 富士フイルム株式会社 電子ペーパ読取装置
TWI239629B (en) * 2003-03-17 2005-09-11 Seiko Epson Corp Method of manufacturing semiconductor device, semiconductor device, circuit substrate and electronic apparatus
JP4723195B2 (ja) * 2004-03-05 2011-07-13 株式会社オクテック プローブの製造方法
JP2005347623A (ja) * 2004-06-04 2005-12-15 Seiko Epson Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313985A (ja) * 2002-04-05 2002-10-25 Oki Electric Ind Co Ltd チップサイズパッケージの製造方法
JP2005044899A (ja) * 2003-07-24 2005-02-17 Daiwa Kogyo:Kk 層間接続構造の形成方法及び多層配線基板

Also Published As

Publication number Publication date
KR20080085682A (ko) 2008-09-24
US7829378B2 (en) 2010-11-09
US20080230897A1 (en) 2008-09-25
CN101271853A (zh) 2008-09-24
TW200839989A (en) 2008-10-01

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