JP2008227458A - 発光ダイオードパッケージの製造方法。 - Google Patents
発光ダイオードパッケージの製造方法。 Download PDFInfo
- Publication number
- JP2008227458A JP2008227458A JP2007338530A JP2007338530A JP2008227458A JP 2008227458 A JP2008227458 A JP 2008227458A JP 2007338530 A JP2007338530 A JP 2007338530A JP 2007338530 A JP2007338530 A JP 2007338530A JP 2008227458 A JP2008227458 A JP 2008227458A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- lattice structure
- led chip
- fluorescent layer
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000843 powder Substances 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 238000000465 moulding Methods 0.000 claims description 11
- 239000002952 polymeric resin Substances 0.000 description 8
- 229920003002 synthetic resin Polymers 0.000 description 8
- 239000002904 solvent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】本発明は、LEDチップを設ける段階と、前記LEDチップの上部に蛍光層を形成する段階と、前記蛍光層上に蛍光体粉末が含まれたインクを使用するインクジェット工程により格子構造の蛍光体を形成する段階を含むLEDパッケージの製造方法を提供する。また、本発明は所定の厚さを有する蛍光層を形成する段階と、前記蛍光層上に蛍光体粉末が含まれたインクを使用するインクジェット工程により格子構造の蛍光体を形成する段階、前記格子構造の蛍光体が形成された蛍光層をLEDチップ上部に配置する段階を含むLEDパッケージの製造方法を提供する。
【選択図】図2
Description
22:蛍光層
23:格子構造の蛍光体
24:パッケージハウジング
25:透明樹脂
47:インクジェットノズル
66:格子構造の蛍光体が形成された蛍光層
Claims (11)
- LEDチップを設ける段階、
前記LEDチップの上部に蛍光層を形成する段階、
前記蛍光層上に蛍光体粉末が含まれたインクを使用するインクジェット工程により格子構造の蛍光体を形成する段階を含むLEDパッケージの製造方法。 - 前記蛍光層は、前記LEDチップの上面に取り付けられ、
前記蛍光層が取り付けられたLEDチップをパッケージハウジング内部に実装する段階、
前記パッケージハウジング内部を透明樹脂でモールディングする段階をさらに含むことを特徴とする請求項1に記載のLEDパッケージの製造方法。 - 前記LEDチップを設ける段階は、
LEDチップをパッケージハウジング内部に実装する段階、
前記パッケージハウジング内部を透明樹脂でモールディングする段階を含み、
前記蛍光層は、前記透明樹脂の上面に形成されることを特徴とする請求項1に記載のLEDパッケージの製造方法。 - 前記格子構造の蛍光体は、
複数のドット(dot)の配列により形成されることを特徴とする請求項1に記載のLEDパッケージの製造方法。 - 前記格子構造の蛍光体は、
前記蛍光層の屈折率より大きい屈折率を有することを特徴とする請求項1に記載のLEDパッケージの製造方法。 - 所定の厚さを有する蛍光層を形成する段階、
前記蛍光層上に蛍光体粉末が含まれたインクを使用するインクジェット工程により格子構造の蛍光体を形成する段階、
前記格子構造の蛍光体が形成された蛍光層をLEDチップ上部に配置する段階を含むLEDパッケージの製造方法。 - 前記格子構造の蛍光体が形成された蛍光層をLEDチップ上部に配置する段階は、
LEDチップ上面に前記格子構造の蛍光体が形成された蛍光層を取り付ける段階、
前記蛍光層が取り付けられたLEDチップをパッケージハウジング内部に実装する段階、
前記パッケージハウジング内部を透明樹脂でモールディングする段階を含むことを特徴とする請求項6に記載のLEDパッケージの製造方法。 - 前記格子構造の蛍光体が形成された蛍光層をLEDチップ上部に配置する段階は、
LEDチップをパッケージハウジング内部に実装する段階、
前記パッケージハウジング内部を透明樹脂でモールディングする段階、
前記透明樹脂の上面に前記格子構造の蛍光体が形成された蛍光層を取り付ける段階を含むことを特徴とする請求項6に記載のLEDパッケージの製造方法。 - 前記格子構造の蛍光体は、シート単位の蛍光層上に形成され、
前記格子構造の蛍光体が形成された蛍光層をLEDチップ上部に配置する段階の前に前記格子構造の蛍光体が形成された蛍光層シートをチップ単位に切断する段階をさらに含むことを特徴とする請求項6に記載のLEDパッケージの製造方法。 - 前記格子構造の蛍光体は、
複数のドット(dot)の配列により形成されることを特徴とする請求項6に記載のLEDパッケージの製造方法。 - 前記格子構造の蛍光体は、
前記蛍光層の屈折率より大きい屈折率を有することを特徴とする請求項6に記載のLEDパッケージの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0024368 | 2007-03-13 | ||
KR1020070024368A KR100862532B1 (ko) | 2007-03-13 | 2007-03-13 | 발광 다이오드 패키지 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008227458A true JP2008227458A (ja) | 2008-09-25 |
JP4895998B2 JP4895998B2 (ja) | 2012-03-14 |
Family
ID=39845658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007338530A Active JP4895998B2 (ja) | 2007-03-13 | 2007-12-28 | 発光ダイオード(led)パッケージの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7795055B2 (ja) |
JP (1) | JP4895998B2 (ja) |
KR (1) | KR100862532B1 (ja) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101807654A (zh) * | 2009-02-13 | 2010-08-18 | 夏普株式会社 | 发光装置以及发光装置的制造方法 |
WO2012023425A1 (ja) * | 2010-08-17 | 2012-02-23 | コニカミノルタオプト株式会社 | 発光装置の製造方法 |
JP2012089806A (ja) * | 2010-10-22 | 2012-05-10 | Hiroshi Ninomiya | ベアチップ実装面発光体の製造方法及びベアチップ実装面発光体 |
JP2013012516A (ja) * | 2011-06-28 | 2013-01-17 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2013227362A (ja) * | 2012-04-24 | 2013-11-07 | Citizen Electronics Co Ltd | 蛍光体シート及び蛍光体シートを備えた半導体発光装置 |
JP2014099650A (ja) * | 2014-02-03 | 2014-05-29 | Sharp Corp | 発光装置および発光装置の製造方法 |
JP2014158054A (ja) * | 2009-07-22 | 2014-08-28 | Philips Lumileds Lightng Co Llc | 発光ダイオードパッケージ及びその製造方法 |
WO2015129223A1 (ja) * | 2014-02-28 | 2015-09-03 | パナソニックIpマネジメント株式会社 | 発光装置 |
JP2015226064A (ja) * | 2014-05-27 | 2015-12-14 | ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイThe Board Of Trustees Of The University Of Illinois | ナノ構造材料の方法および素子 |
US9515239B2 (en) | 2014-02-28 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
US9518215B2 (en) | 2014-02-28 | 2016-12-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
US9618697B2 (en) | 2014-02-28 | 2017-04-11 | Panasonic Intellectual Property Management Co., Ltd. | Light directional angle control for light-emitting device and light-emitting apparatus |
US9880336B2 (en) | 2014-02-28 | 2018-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US9882100B2 (en) | 2015-08-20 | 2018-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device having surface structure for limiting directional angle of light |
US9890912B2 (en) | 2014-02-28 | 2018-02-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
US9899577B2 (en) | 2015-06-08 | 2018-02-20 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
US10012780B2 (en) | 2014-02-28 | 2018-07-03 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US10031276B2 (en) | 2015-03-13 | 2018-07-24 | Panasonic Intellectual Property Management Co., Ltd. | Display apparatus including photoluminescent layer |
US10094522B2 (en) | 2016-03-30 | 2018-10-09 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device having photoluminescent layer |
US10113712B2 (en) | 2015-03-13 | 2018-10-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US10115874B2 (en) | 2015-06-08 | 2018-10-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US10182702B2 (en) | 2015-03-13 | 2019-01-22 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
US10359155B2 (en) | 2015-08-20 | 2019-07-23 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
USRE49093E1 (en) | 2015-03-13 | 2022-06-07 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
USRE50041E1 (en) | 2015-08-20 | 2024-07-16 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412926B2 (en) | 2005-06-10 | 2016-08-09 | Cree, Inc. | High power solid-state lamp |
KR20090002835A (ko) * | 2007-07-04 | 2009-01-09 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
CN102106009B (zh) | 2008-07-03 | 2013-07-24 | 三星电子株式会社 | 波长转换发光二极管芯片和具有该芯片的发光二极管装置 |
TWI411091B (zh) * | 2008-10-13 | 2013-10-01 | Walsin Lihwa Corp | 發光二極體封裝結構 |
US8507300B2 (en) * | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
JP5327042B2 (ja) * | 2009-03-26 | 2013-10-30 | 豊田合成株式会社 | Ledランプの製造方法 |
KR101099428B1 (ko) | 2009-04-06 | 2011-12-28 | 이익주 | 엘이디 모듈 제조방법 |
KR100969100B1 (ko) * | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US20110227102A1 (en) * | 2010-03-03 | 2011-09-22 | Cree, Inc. | High efficacy led lamp with remote phosphor and diffuser configuration |
US8632196B2 (en) | 2010-03-03 | 2014-01-21 | Cree, Inc. | LED lamp incorporating remote phosphor and diffuser with heat dissipation features |
US10359151B2 (en) | 2010-03-03 | 2019-07-23 | Ideal Industries Lighting Llc | Solid state lamp with thermal spreading elements and light directing optics |
US9316361B2 (en) | 2010-03-03 | 2016-04-19 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration |
US9625105B2 (en) | 2010-03-03 | 2017-04-18 | Cree, Inc. | LED lamp with active cooling element |
US9500325B2 (en) | 2010-03-03 | 2016-11-22 | Cree, Inc. | LED lamp incorporating remote phosphor with heat dissipation features |
US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
KR101210066B1 (ko) | 2011-01-31 | 2012-12-07 | 엘지이노텍 주식회사 | 광 변환 부재 및 이를 포함하는 표시장치 |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
US8329485B2 (en) | 2011-05-09 | 2012-12-11 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED phosphor ink composition for ink-jet printing |
KR101305696B1 (ko) | 2011-07-14 | 2013-09-09 | 엘지이노텍 주식회사 | 표시장치 및 광학 부재 |
KR20130009020A (ko) | 2011-07-14 | 2013-01-23 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
KR101893494B1 (ko) | 2011-07-18 | 2018-08-30 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
KR101262520B1 (ko) | 2011-07-18 | 2013-05-08 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
KR101241549B1 (ko) | 2011-07-18 | 2013-03-11 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
KR101294415B1 (ko) | 2011-07-20 | 2013-08-08 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
KR101251815B1 (ko) * | 2011-11-07 | 2013-04-09 | 엘지이노텍 주식회사 | 광학 시트 및 이를 포함하는 표시장치 |
US9488359B2 (en) | 2012-03-26 | 2016-11-08 | Cree, Inc. | Passive phase change radiators for LED lamps and fixtures |
US20130342103A1 (en) * | 2012-06-25 | 2013-12-26 | Shing-Chung Wang | Solid state lighting luminaire and a fabrication method thereof |
KR20140092127A (ko) | 2013-01-15 | 2014-07-23 | 삼성전자주식회사 | 반도체 발광소자 및 반도체 발광소자 제조방법 |
TW201503421A (zh) * | 2013-07-15 | 2015-01-16 | Ind Tech Res Inst | 發光二極體晶粒 |
US9360188B2 (en) | 2014-02-20 | 2016-06-07 | Cree, Inc. | Remote phosphor element filled with transparent material and method for forming multisection optical elements |
JP6638084B2 (ja) * | 2016-03-16 | 2020-01-29 | ルミレッズ ホールディング ベーフェー | Ledモジュールを製造する方法 |
CN107092130A (zh) * | 2016-09-30 | 2017-08-25 | 深圳市玲涛光电科技有限公司 | 光源组件及其显示装置 |
US10957825B2 (en) * | 2017-09-25 | 2021-03-23 | Lg Innotek Co., Ltd. | Lighting module and lighting apparatus having thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004096113A (ja) * | 2002-09-02 | 2004-03-25 | Samsung Electro Mech Co Ltd | 発光ダイオード及びその製造方法 |
JP2004363343A (ja) * | 2003-06-05 | 2004-12-24 | Nichia Chem Ind Ltd | 発光装置およびその形成方法 |
JP2005300576A (ja) * | 2004-04-06 | 2005-10-27 | Konica Minolta Opto Inc | 防眩性反射防止フィルム、偏光板及び表示装置 |
JP2006032726A (ja) * | 2004-07-16 | 2006-02-02 | Kyocera Corp | 発光装置 |
WO2006011734A1 (en) * | 2004-07-24 | 2006-02-02 | Young Rak Do | Led device comprising thin-film phosphor having two dimensional nano periodic structures |
JP2006303373A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置の製造方法と該発光装置を用いた照明器具 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3925137B2 (ja) | 2001-10-03 | 2007-06-06 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US20050006659A1 (en) * | 2003-07-09 | 2005-01-13 | Ng Kee Yean | Light emitting diode utilizing a discrete wavelength-converting layer for color conversion |
US20050167684A1 (en) * | 2004-01-21 | 2005-08-04 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based phosphor material |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
DE102005061828B4 (de) * | 2005-06-23 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Wellenlängenkonvertierendes Konvertermaterial, lichtabstrahlendes optisches Bauelement und Verfahren zu dessen Herstellung |
US20070001182A1 (en) * | 2005-06-30 | 2007-01-04 | 3M Innovative Properties Company | Structured phosphor tape article |
KR100665219B1 (ko) * | 2005-07-14 | 2007-01-09 | 삼성전기주식회사 | 파장변환형 발광다이오드 패키지 |
US7569406B2 (en) * | 2006-01-09 | 2009-08-04 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
-
2007
- 2007-03-13 KR KR1020070024368A patent/KR100862532B1/ko active IP Right Grant
- 2007-12-28 JP JP2007338530A patent/JP4895998B2/ja active Active
-
2008
- 2008-01-10 US US12/007,417 patent/US7795055B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004096113A (ja) * | 2002-09-02 | 2004-03-25 | Samsung Electro Mech Co Ltd | 発光ダイオード及びその製造方法 |
JP2004363343A (ja) * | 2003-06-05 | 2004-12-24 | Nichia Chem Ind Ltd | 発光装置およびその形成方法 |
JP2005300576A (ja) * | 2004-04-06 | 2005-10-27 | Konica Minolta Opto Inc | 防眩性反射防止フィルム、偏光板及び表示装置 |
JP2006032726A (ja) * | 2004-07-16 | 2006-02-02 | Kyocera Corp | 発光装置 |
WO2006011734A1 (en) * | 2004-07-24 | 2006-02-02 | Young Rak Do | Led device comprising thin-film phosphor having two dimensional nano periodic structures |
JP2006303373A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置の製造方法と該発光装置を用いた照明器具 |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8736160B2 (en) | 2009-02-13 | 2014-05-27 | Sharp Kabushiki Kaisha | Light-emitting apparatus and method for manufacturing same |
CN101807654A (zh) * | 2009-02-13 | 2010-08-18 | 夏普株式会社 | 发光装置以及发光装置的制造方法 |
CN104282829B (zh) * | 2009-02-13 | 2018-10-12 | 夏普株式会社 | 发光装置以及发光装置的制造方法 |
US9175818B2 (en) | 2009-02-13 | 2015-11-03 | Sharp Kabushiki Kaisha | Light-emitting apparatus and method for manufacturing same |
CN104282829A (zh) * | 2009-02-13 | 2015-01-14 | 夏普株式会社 | 发光装置以及发光装置的制造方法 |
JP2014158054A (ja) * | 2009-07-22 | 2014-08-28 | Philips Lumileds Lightng Co Llc | 発光ダイオードパッケージ及びその製造方法 |
JP5299577B2 (ja) * | 2010-08-17 | 2013-09-25 | コニカミノルタ株式会社 | 発光装置の製造方法 |
US9153752B2 (en) | 2010-08-17 | 2015-10-06 | Konica Minolta Advanced Layers, Inc. | Method of manufacturing light-emitting device |
JP5870923B2 (ja) * | 2010-08-17 | 2016-03-01 | コニカミノルタ株式会社 | 発光装置の製造方法 |
WO2012023425A1 (ja) * | 2010-08-17 | 2012-02-23 | コニカミノルタオプト株式会社 | 発光装置の製造方法 |
CN103081142A (zh) * | 2010-08-17 | 2013-05-01 | 柯尼卡美能达先进多层薄膜株式会社 | 发光装置的制造方法 |
US8835192B2 (en) | 2010-08-17 | 2014-09-16 | Konica Minolta, Inc. | Method of manufacturing light-emitting device |
CN103081142B (zh) * | 2010-08-17 | 2015-01-14 | 柯尼卡美能达先进多层薄膜株式会社 | 发光装置的制造方法 |
WO2012023424A1 (ja) * | 2010-08-17 | 2012-02-23 | コニカミノルタオプト株式会社 | 発光装置の製造方法 |
JP2012089806A (ja) * | 2010-10-22 | 2012-05-10 | Hiroshi Ninomiya | ベアチップ実装面発光体の製造方法及びベアチップ実装面発光体 |
JP2013012516A (ja) * | 2011-06-28 | 2013-01-17 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2013227362A (ja) * | 2012-04-24 | 2013-11-07 | Citizen Electronics Co Ltd | 蛍光体シート及び蛍光体シートを備えた半導体発光装置 |
JP2014099650A (ja) * | 2014-02-03 | 2014-05-29 | Sharp Corp | 発光装置および発光装置の製造方法 |
WO2015129223A1 (ja) * | 2014-02-28 | 2015-09-03 | パナソニックIpマネジメント株式会社 | 発光装置 |
US9890912B2 (en) | 2014-02-28 | 2018-02-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
US9515239B2 (en) | 2014-02-28 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
US9518215B2 (en) | 2014-02-28 | 2016-12-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
US9618697B2 (en) | 2014-02-28 | 2017-04-11 | Panasonic Intellectual Property Management Co., Ltd. | Light directional angle control for light-emitting device and light-emitting apparatus |
US10012780B2 (en) | 2014-02-28 | 2018-07-03 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US9880336B2 (en) | 2014-02-28 | 2018-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
CN105280832A (zh) * | 2014-05-27 | 2016-01-27 | 陶氏环球技术有限责任公司 | 纳米结构材料方法和装置 |
JP2017151442A (ja) * | 2014-05-27 | 2017-08-31 | ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイThe Board Of Trustees Of The University Of Illinois | ナノ構造材料の方法および素子 |
JP2015226064A (ja) * | 2014-05-27 | 2015-12-14 | ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイThe Board Of Trustees Of The University Of Illinois | ナノ構造材料の方法および素子 |
US10031276B2 (en) | 2015-03-13 | 2018-07-24 | Panasonic Intellectual Property Management Co., Ltd. | Display apparatus including photoluminescent layer |
US10113712B2 (en) | 2015-03-13 | 2018-10-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US10182702B2 (en) | 2015-03-13 | 2019-01-22 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
USRE49093E1 (en) | 2015-03-13 | 2022-06-07 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
US9899577B2 (en) | 2015-06-08 | 2018-02-20 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
US10115874B2 (en) | 2015-06-08 | 2018-10-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device including photoluminescent layer |
US9882100B2 (en) | 2015-08-20 | 2018-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device having surface structure for limiting directional angle of light |
US10359155B2 (en) | 2015-08-20 | 2019-07-23 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
USRE50041E1 (en) | 2015-08-20 | 2024-07-16 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
US10094522B2 (en) | 2016-03-30 | 2018-10-09 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device having photoluminescent layer |
Also Published As
Publication number | Publication date |
---|---|
US20090286337A1 (en) | 2009-11-19 |
KR20080083776A (ko) | 2008-09-19 |
US7795055B2 (en) | 2010-09-14 |
JP4895998B2 (ja) | 2012-03-14 |
KR100862532B1 (ko) | 2008-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4895998B2 (ja) | 発光ダイオード(led)パッケージの製造方法 | |
JP4123057B2 (ja) | 発光装置及びその製造方法 | |
JP5680278B2 (ja) | 発光装置 | |
KR100703217B1 (ko) | 발광다이오드 패키지 제조방법 | |
JP6187277B2 (ja) | 発光装置及びその製造方法 | |
JP5941306B2 (ja) | 発光装置およびその製造方法 | |
JP4749870B2 (ja) | 発光装置の製造方法 | |
EP1993151A2 (en) | Light emitting device and method of manufacturing the same | |
US8860056B2 (en) | Structure and method for LED with phosphor coating | |
JP6066253B2 (ja) | 発光装置の製造方法 | |
JP5322728B2 (ja) | Led光源及びled光源の製造方法 | |
KR20120085660A (ko) | 발광장치 및 그 제조방법 | |
JP2013175531A (ja) | 発光装置 | |
JP6325271B2 (ja) | 光照射装置および印刷装置 | |
JP2010123606A (ja) | 貫通電極付基板、発光デバイス及び貫通電極付基板の製造方法 | |
JP5826115B2 (ja) | 光照射デバイス、光照射モジュールおよび印刷装置 | |
JP6025138B2 (ja) | 発光装置及びその製造方法 | |
US11699688B2 (en) | Surface-emitting light source and method of manufacturing the same | |
JP4315162B2 (ja) | 発光装置の製造方法 | |
KR101288918B1 (ko) | 파장변환층이 형성된 발광소자 제조방법 및 그에 따라 제조된 발광소자 | |
JP2013125808A (ja) | 発光モジュール | |
JP6423301B2 (ja) | 光照射装置および印刷装置 | |
JP2012245750A (ja) | 光照射モジュール、および印刷装置 | |
JP2012009696A (ja) | 発光装置およびそれを用いたled照明器具 | |
JP5675506B2 (ja) | 光照射デバイス、光照射モジュールおよび印刷装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110519 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110621 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111021 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20111027 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111129 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111220 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4895998 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |