US7795055B2 - Method of manufacturing light emitting diode package - Google Patents
Method of manufacturing light emitting diode package Download PDFInfo
- Publication number
- US7795055B2 US7795055B2 US12/007,417 US741708A US7795055B2 US 7795055 B2 US7795055 B2 US 7795055B2 US 741708 A US741708 A US 741708A US 7795055 B2 US7795055 B2 US 7795055B2
- Authority
- US
- United States
- Prior art keywords
- phosphor layer
- phosphors
- light emitting
- lattice structure
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 29
- 239000000843 powder Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 28
- 238000000465 moulding Methods 0.000 claims description 8
- 229920003002 synthetic resin Polymers 0.000 description 9
- 239000002952 polymeric resin Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Definitions
- the present invention relates to a method of manufacturing a light emitting diode (LED) package, more particularly, which allows phosphors of a lattice structure to be formed on a phosphor layer disposed on a light emitting surface of an LED chip of the LED package using an ink jet process, thereby increasing light emitting efficiency of the LED package and simplifying a manufacturing method thereof.
- LED light emitting diode
- a light emitting diode utilizes a phenomenon in which with a forward voltage applied to electrodes, electrons of a conduction band emit light equivalent to an energy required when transiting to recombine with holes of a valence band.
- the LED has various advantages over a conventional bulb to be extensively applied to electric and electronic products. That is, the LED is smaller-sized and lighter-weight, less heat-radiating, long in useful life and high in response rate.
- One method is to form a structure or a pattern having a predetermined period on a surface of a phosphor in order to enhance light emitting efficiency of the LED device.
- phosphor powder is formed into a slurry or paste to be applied on a flat surface.
- an irradiated excited light source and light generated by subsequent excitation of the phosphor may be scattered or lost due to the phosphor powder, thereby degrading light emitting efficiency and brightness.
- FIG. 1 is a cross-sectional view illustrating a conventional LED package disclosed in Korean Patent Publication No. 2006-0055934.
- the LED package includes an LED 11 , a housing 14 for housing the LED chip therein and an amplifying plate 12 sealing the LED chip.
- Reflective plates 14 a are formed inside the housing 14 to reflect light from the LED chip 11 , and the LED chip 11 is bonded to the housing by wires 18 .
- microstructures 13 are formed on one surface of the amplifying plate 12 . The microstructures scatter light emitted from the LED chip to be amplified and emitted.
- the pitch of the microstructures, depth of furrows and shapes may be varied to ensure light to be maximally refracted through the amplifying plate and thus to be maximally radiated forward.
- a photo-sensitive polymer is applied on the phosphor body and then an UV is irradiated to cure a predetermined lattice structure. Then a remaining area other than the lattice structure is etched to form a three-dimensional lattice structure.
- a photolithography may be employed to form the thin film-shaped phosphor of the lattice structure.
- An aspect of the present invention provides a method of forming a lattice structure on a phosphor layer by an ink jet process, thereby simplifying a manufacturing process and ensuring a periodically uniform and precise lattice structure.
- An aspect of the present invention also provides a method of forming a lattice structure directly on a phosphor layer sheet to improve mass-producibiltiy.
- a method of manufacturing a light emitting diode chip including: providing a light emitting diode chip; forming a phosphor layer on a top of the light emitting diode chip; and forming phosphors of a lattice structure on the phosphor layer by an inkjet process using an ink containing phosphor powder.
- the phosphor layer may be attached on the top of the light emitting diode chip, wherein the method may further include: mounting the light emitting diode chip having the phosphor layer attached on the top thereof in a housing; and molding an inner portion of the package housing with a transparent resin.
- the providing a light emitting diode chip may include: mounting the light emitting diode chip in the package housing; and molding an inner portion of the package housing with a transparent resin, wherein the phosphor layer is formed on a top of the transparent resin.
- the phosphors of the lattice structure may be arranged in a plurality of dots.
- the phosphors of the lattice structure may have a refractivity greater than a refractivity of the phosphor layer.
- a method of manufacturing a light emitting diode package including: forming a phosphor layer with a predetermined thickness; forming phosphors of a lattice structure on the phosphor layer by an ink jet process using an ink containing phosphor powder; and disposing the phosphor layer having the phosphors of the lattice structure formed thereon on a top of the light emitting diode chip.
- the disposing the phosphor layer may include: attaching the phosphor layer having the phosphors of the lattice structure formed thereon on the top of the light emitting diode chip; mounting the light emitting diode chip having the phosphor layer attached thereon in a package housing; and molding an inner portion of the package housing with a transparent resin.
- the disposing the phosphor layer may include: mounting the light emitting diode chip in the package housing; molding an inner portion of the package housing with a transparent resin; and attaching the phosphor layer having the phosphors of the lattice structure formed thereon on a top of the transparent resin.
- the phosphors of the lattice structure may be formed on a sheet of the phosphor layer, wherein the method may further include: cutting the sheet of the phosphor layer having the phosphors of the lattice structure into unit chips before the disposing the phosphor layer having the phosphors of the lattice structure formed thereon.
- the phosphors of the lattice structure may be arranged in a plurality of dots.
- the phosphors of the lattice structure may have a refractivity greater than a refractivity of the phosphor layer.
- FIG. 1 is a cross-sectional view illustrating a conventional light emitting diode package
- FIGS. 2A to 2E are a flow chart illustrating a method of manufacturing a light emitting diode package according to an exemplary embodiment of the invention
- FIGS. 3A to 3D are a flow chart illustrating a method of manufacturing a light emitting diode package according to another exemplary embodiment of the invention.
- FIG. 4A is a cross-sectional view and FIG. 4B is a perspective view illustrating a method of forming a phosphor of a lattice structure on a phosphor layer by an ink jet process, respectively according to an exemplary embodiment of the invention
- FIGS. 5A to 5C are a flow chart illustrating a method of forming a phosphor layer having a phosphor of a lattice structure thereon according to another embodiment of the invention.
- FIGS. 6A to 6C are a flow chart illustrating a method of manufacturing an LED package according to an exemplary embodiment of the invention, which adopts a phosphor layer having a phosphor of a lattice structure formed thereon by the method shown in FIG. 5 ;
- FIGS. 7A to 7C are a flow chart illustrating a method of manufacturing an LED package according to another exemplary embodiment of the invention, which adopts a phosphor layer having a phosphor of a lattice structure formed thereon by the method shown in FIG. 5 .
- FIG. 2 is a flow chart illustrating a method of manufacturing a light emitting diode (LED) package according to an exemplary embodiment of the invention.
- LED light emitting diode
- an LED chip 21 is provided.
- the present embodiment employs an LED chip cut into unit chips at a wafer level.
- a phosphor layer 22 is formed on the LED chip 21 .
- the phosphor layer 22 may be formed by applying a paste having dispersible phosphor powder of nano particles mixed in a transparent polymer resin on the LED chip 21 and curing the paste.
- the transparent polymer resin may utilize a curable resin or an acrylic resin.
- the transparent polymer may adopt an epoxy polymer resin or a silicon polymer resin.
- phosphors 23 of a lattice structure are formed on the phosphor layer 22 .
- the lattice-structured phosphors 23 are formed by an ink jet process.
- the lattice-structured phosphors define protrusions on the phosphor layer 22 , thereby forming microstructures on the phosphor layer 22 .
- a plurality of dots 23 protruded from the phosphor layer 22 define the lattice structure.
- the ink jet process when employed to form the lattice structure, allows control of an amount and size of droplets ejected according to characteristics of a head used. Accordingly, a height, width and period of the lattice structure can be adjusted freely. Moreover, the ink jet process precludes a need for a conventional exposure process requiring a mask, but enables the lattice structure to be formed by directly printing a phosphor-containing ink. This simplifies a process significantly and increases economic efficiency due to a minimal amount of phosphors used.
- the ink used in the ink jet process may be formed by mixing dispersible phosphor powder of nano particles, a solvent and curable polymer.
- the ink may have a proper viscosity to be ejected by a nozzle and the lattice-structured phosphors can be adjusted in height depending on the viscosity.
- the lattice-structured phosphors 23 may be made of a material having a refractivity identical to or higher than the underlying phosphor layer 22 to eliminate total reflection effects.
- the LED chip 21 having the phosphor layer 22 attached thereon is mounted in a package housing 24 .
- a metal terminal (not shown) is disposed in the package housing 24 to have the LED chip 21 mounted thereon.
- the metal terminal and the LED chip 21 may be electrically connected together by wire bonding and flip chip bonding.
- LED chip mounted in the package housing means the LED chip electrically connected to the terminal in the package housing.
- reflective plates 24 a are formed in the shape of a circular truncated cone to reflect light generated from the LED chip forward.
- the reflective plates 24 a may be formed by thinly coating Al, Ag, Cr, Ni or Ti on a surface of a thermo-setting polymer resin or a metal plate.
- an inner portion of the package housing 24 is molded with a transparent resin 25 .
- the transparent resin 25 protects the LED chip mounted in the housing 24 from external environment. Also, the resin 25 may be phosphor-containing.
- the transparent resin may utilize a transparent polymer resin and particularly an epoxy resin or a silicon resin.
- FIGS. 3A to 3D are a flow chart illustrating a method of manufacturing an LED package according to another embodiment of the invention.
- an LED chip 31 is mounted in a package housing 34 .
- the LED chip 31 mounted in the package housing 34 means the LED chip 31 electrically connected to a terminal of the package housing 34 by wire bonding or flip chip bonding.
- an inner portion of the housing package 34 is molded with a transparent resin 35 .
- the transparent resin 35 may utilize a transparent polymer resin, and particularly, an epoxy resin or a silicon resin.
- a phosphor layer is formed on the transparent resin 35 .
- the phosphor layer 32 may be formed by applying a phosphor paste having phosphor powder and an epoxy resin mixed therein on a transparent resin and curing the phosphor paste.
- phosphors 33 are formed on the phosphor layer 32 by an ink jet process.
- the procedure of forming the phosphors of a lattice structure 33 can be performed in the same manner as the procedure shown in FIG. 2C .
- FIG. 4A is a cross-sectional view and FIG. 4B is a perspective view illustrating a method of manufacturing phosphors of a lattice structure on a phosphor layer by an ink jet process as shown in the embodiments of FIGS. 2 and 3 .
- phosphors 43 of a lattice structure are formed using an ink jet nozzle 47 on a phosphor layer 42 of a chip size formed on an LED chip or a transparent resin.
- the ink jet nozzle 47 is made to eject droplet discontinuously to allow a plurality of protruded dots to be arranged in a lattice structure.
- the configuration and characteristics of the nozzle may be varied. That is, the droplets may be ejected continuously from the nozzle to form the continuously protruded dots of phosphors having a lattice structure.
- the ink for use in the ink jet process may utilize phosphor powder, a solvent and a polymer resin.
- the ink may have a viscosity varied by adjusting a ratio of the polymer resin to the solvent, which are mixed together.
- the phosphors of the lattice structure can be adjusted in height and area.
- the size and height of the dots defining the lattice-structured phosphors can be adjusted basically by varying a nozzle size of a head, a driving voltage and a driving waveform, thereby producing the lattice-structure phosphors of a desired size and shape.
- the ink jet process when used in forming the lattice-structured phosphors allows the microstructures to be more easily adjusted in shape and spacing than conventional etching or photolithography. Also, the ink jet process enables direct printing on the phosphors, thereby simplifying an overall process.
- FIGS. 5A to 5C are a flow chart illustrating a method of forming a phosphor layer having phosphors of a lattice structure formed thereon according to another exemplary embodiment of the invention.
- a phosphor layer sheet 52 is formed.
- the phosphor layer sheet 52 is formed to a predetermined thickness by curing a transparent resin having phosphor powder mixed therein.
- phosphors 53 are formed on the phosphor sheet 52 by an ink jet process.
- the ink jet nozzle 57 is moved in a direction indicated with arrows along the phosphor sheet 52 .
- the dot-shaped phosphors of a lattice structure are formed but the lattice-structure phosphors can be formed without interruption by adjusting characteristics of the ink jet nozzle 57 .
- the phosphor sheet 52 having the lattice-structured phosphors 53 thereon is cut into unit chips 52 a , 52 b , and 52 c.
- the phosphors of the lattice structure are formed at a time on the phosphor layer sheet, and then cut into unit chips of a desired size. This facilitates an overall process over a case where the ink jet process is performed on respective unit LED chips or an LED package.
- FIGS. 6A to 6C are a flow chart illustrating a method of manufacturing an LED package according to an exemplary embodiment of the invention, which adopts a phosphor layer having phosphors of a lattice structure formed thereon by the method shown in FIG. 5 .
- a phosphor layer 66 having phosphors of a lattice structure formed thereon is bonded to an LED chip 61 .
- the phosphor layer 66 having the lattice-structured phosphors formed thereon is the unit chip phosphor layer manufactured by the method shown in FIGS. 5A to 5C .
- the phosphor layer 66 having the lattice-structured phosphors formed thereon is integrally fabricated on a sheet and cut into unit chips to be bonded onto the LED chip. This accordingly simplifies a manufacturing process.
- the LED chip 61 where the phosphor layer 66 having the lattice-structured phosphors are attached is mounted in a package housing 64 .
- a package housing 64 Referring to FIG. 6C , an inner portion of the package housing 64 is molded with a transparent resin.
- FIGS. 6B and 6C of the present embodiment are performed in an identical process to FIGS. 2D and 2E .
- FIGS. 7A to 7C are a flow chart illustrating a method of manufacturing an LED package according to another embodiment of the invention.
- an LED chip 71 is mounted in a package housing 74 and referring to FIG. 7B , an inner portion of the package housing 74 is molded with a transparent resin 75 .
- FIGS. 7A and 7B of the present embodiment are performed in an identical process to FIGS. 3A and 3B .
- a phosphor layer 76 having phosphors of a lattice structure formed thereon is bonded to the transparent resin 75 .
- the phosphor layer 76 having the lattice-structured phosphors formed thereon is a unit chip phosphor layer fabricated by processes of FIGS. 5A to 5C .
- the phosphor layer 76 having the lattice-structured phosphors formed thereon is integrally fabricated and then bonded onto the LED chip, thereby simplifying a manufacturing process.
- the present invention is not limited to the aforementioned embodiments and drawings attached. That is, a type of a phosphor-containing ink used in the ink jet process and shape of the lattice-structured phosphors may be varied.
- an ink jet method is employed to form lattice-structured phosphors on a phosphor layer. This realizes a periodically uniform and more precise lattice structure and simplifies a process of manufacturing the lattice-structured phosphors.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0024368 | 2007-03-13 | ||
KR1020070024368A KR100862532B1 (en) | 2007-03-13 | 2007-03-13 | Method of manufacturing light emitting diode package |
Publications (2)
Publication Number | Publication Date |
---|---|
US20090286337A1 US20090286337A1 (en) | 2009-11-19 |
US7795055B2 true US7795055B2 (en) | 2010-09-14 |
Family
ID=39845658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/007,417 Active 2028-09-26 US7795055B2 (en) | 2007-03-13 | 2008-01-10 | Method of manufacturing light emitting diode package |
Country Status (3)
Country | Link |
---|---|
US (1) | US7795055B2 (en) |
JP (1) | JP4895998B2 (en) |
KR (1) | KR100862532B1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100090245A1 (en) * | 2008-10-13 | 2010-04-15 | Hung-Yi Lin | Light emitting diode package and method of making the same |
US20100244071A1 (en) * | 2009-03-26 | 2010-09-30 | Toyoda Gosei Co., Ltd. | Method of manufacturing led lamp |
US20110198645A1 (en) * | 2010-02-12 | 2011-08-18 | Kyoung Woo Jo | Light emitting device and light emitting device package |
US8329485B2 (en) | 2011-05-09 | 2012-12-11 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED phosphor ink composition for ink-jet printing |
US20150036379A1 (en) * | 2011-11-07 | 2015-02-05 | Lg Innotek Co., Ltd. | Optical sheet, display device and light emitting device having the same |
US9715055B2 (en) | 2011-07-14 | 2017-07-25 | Lg Innotek Co., Ltd. | Display device and optical member |
US9720159B2 (en) | 2011-01-31 | 2017-08-01 | Lg Innotek Co., Ltd. | Optical member and display device including the same |
US9766386B2 (en) | 2011-07-18 | 2017-09-19 | Lg Innotek Co., Ltd. | Optical member and display device having the same |
US9766392B2 (en) | 2011-07-14 | 2017-09-19 | Lg Innotek Co., Ltd. | Optical member, display device having the same and method of fabricating the same |
US9829621B2 (en) | 2011-07-20 | 2017-11-28 | Lg Innotek Co., Ltd. | Optical member and display device having the same |
US9835785B2 (en) | 2011-07-18 | 2017-12-05 | Lg Innotek Co., Ltd. | Optical member, display device having the same, and method of fabricating the same |
US9851602B2 (en) | 2011-07-18 | 2017-12-26 | Lg Innotek Co., Ltd. | Optical member and display device having the same |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412926B2 (en) | 2005-06-10 | 2016-08-09 | Cree, Inc. | High power solid-state lamp |
KR20090002835A (en) * | 2007-07-04 | 2009-01-09 | 엘지전자 주식회사 | Nitride light emitting device and method of making the same |
WO2010002221A2 (en) | 2008-07-03 | 2010-01-07 | 삼성엘이디 주식회사 | A wavelength-converting light emitting diode (led) chip and led device equipped with chip |
US8507300B2 (en) * | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
JP5680278B2 (en) * | 2009-02-13 | 2015-03-04 | シャープ株式会社 | Light emitting device |
KR101099428B1 (en) | 2009-04-06 | 2011-12-28 | 이익주 | Manufacturing method of light emitting diode module |
US8803171B2 (en) * | 2009-07-22 | 2014-08-12 | Koninklijke Philips N.V. | Reduced color over angle variation LEDs |
US8632196B2 (en) | 2010-03-03 | 2014-01-21 | Cree, Inc. | LED lamp incorporating remote phosphor and diffuser with heat dissipation features |
US20110227102A1 (en) * | 2010-03-03 | 2011-09-22 | Cree, Inc. | High efficacy led lamp with remote phosphor and diffuser configuration |
US9316361B2 (en) | 2010-03-03 | 2016-04-19 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration |
US9500325B2 (en) | 2010-03-03 | 2016-11-22 | Cree, Inc. | LED lamp incorporating remote phosphor with heat dissipation features |
US9625105B2 (en) | 2010-03-03 | 2017-04-18 | Cree, Inc. | LED lamp with active cooling element |
US10359151B2 (en) | 2010-03-03 | 2019-07-23 | Ideal Industries Lighting Llc | Solid state lamp with thermal spreading elements and light directing optics |
US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
WO2012023425A1 (en) * | 2010-08-17 | 2012-02-23 | コニカミノルタオプト株式会社 | Method of manufacturing light-emitting device |
JP5931330B2 (en) * | 2010-10-22 | 2016-06-08 | 不二サッシ株式会社 | Bare chip mounting surface light emitter manufacturing method and bare chip mounting surface light emitter |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
JP5772293B2 (en) * | 2011-06-28 | 2015-09-02 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
US9488359B2 (en) | 2012-03-26 | 2016-11-08 | Cree, Inc. | Passive phase change radiators for LED lamps and fixtures |
JP2013227362A (en) * | 2012-04-24 | 2013-11-07 | Citizen Electronics Co Ltd | Phosphor sheet and semiconductor light-emitting device with phosphor sheet |
US20130342103A1 (en) * | 2012-06-25 | 2013-12-26 | Shing-Chung Wang | Solid state lighting luminaire and a fabrication method thereof |
KR20140092127A (en) | 2013-01-15 | 2014-07-23 | 삼성전자주식회사 | Semiconductor light emitting device and the method of the same |
TW201503421A (en) * | 2013-07-15 | 2015-01-16 | Ind Tech Res Inst | Light-emitting diode chip |
JP2014099650A (en) * | 2014-02-03 | 2014-05-29 | Sharp Corp | Light-emitting device and process of manufacturing the same |
US9360188B2 (en) | 2014-02-20 | 2016-06-07 | Cree, Inc. | Remote phosphor element filled with transparent material and method for forming multisection optical elements |
US9618697B2 (en) | 2014-02-28 | 2017-04-11 | Panasonic Intellectual Property Management Co., Ltd. | Light directional angle control for light-emitting device and light-emitting apparatus |
US9515239B2 (en) | 2014-02-28 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
JP2016034012A (en) | 2014-02-28 | 2016-03-10 | パナソニックIpマネジメント株式会社 | Light emitting element and light emitting device |
WO2015129223A1 (en) * | 2014-02-28 | 2015-09-03 | パナソニックIpマネジメント株式会社 | Light emitting device |
EP3113237B1 (en) | 2014-02-28 | 2019-04-24 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device |
CN105940510B (en) | 2014-02-28 | 2019-01-11 | 松下知识产权经营株式会社 | Light emitting device |
US9518215B2 (en) | 2014-02-28 | 2016-12-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
JP6158248B2 (en) * | 2014-05-27 | 2017-07-05 | ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイThe Board Of Trustees Of The University Of Illinois | Nanostructured material methods and devices |
JP6569856B2 (en) | 2015-03-13 | 2019-09-04 | パナソニックIpマネジメント株式会社 | Light emitting device and endoscope |
US10031276B2 (en) | 2015-03-13 | 2018-07-24 | Panasonic Intellectual Property Management Co., Ltd. | Display apparatus including photoluminescent layer |
JP2016171228A (en) | 2015-03-13 | 2016-09-23 | パナソニックIpマネジメント株式会社 | Light emission element, light emission device and detection device |
US10182702B2 (en) | 2015-03-13 | 2019-01-22 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus including photoluminescent layer |
JP2017005054A (en) | 2015-06-08 | 2017-01-05 | パナソニックIpマネジメント株式会社 | Light emission device |
JP2017003697A (en) | 2015-06-08 | 2017-01-05 | パナソニックIpマネジメント株式会社 | Light-emitting element and light-emitting device |
US10359155B2 (en) | 2015-08-20 | 2019-07-23 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
JP6748905B2 (en) | 2015-08-20 | 2020-09-02 | パナソニックIpマネジメント株式会社 | Light emitting device |
JP2017040818A (en) | 2015-08-20 | 2017-02-23 | パナソニックIpマネジメント株式会社 | Light-emitting element |
EP3430651B1 (en) * | 2016-03-16 | 2019-08-07 | Lumileds Holding B.V. | Method of manufacturing an led module and corresponding module |
JP6719094B2 (en) | 2016-03-30 | 2020-07-08 | パナソニックIpマネジメント株式会社 | Light emitting element |
CN207123684U (en) * | 2016-09-30 | 2018-03-20 | 深圳市玲涛光电科技有限公司 | Flexible surface light source and its electronic equipment |
US10957825B2 (en) | 2017-09-25 | 2021-03-23 | Lg Innotek Co., Ltd. | Lighting module and lighting apparatus having thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050006659A1 (en) * | 2003-07-09 | 2005-01-13 | Ng Kee Yean | Light emitting diode utilizing a discrete wavelength-converting layer for color conversion |
US20050167685A1 (en) * | 2004-01-21 | 2005-08-04 | Yin Chua Janet B. | Device and method for emitting output light using Group IIB element Selenide-based phosphor material |
US20050184638A1 (en) * | 2004-02-23 | 2005-08-25 | Lumileds Lighting, U.S., Llc | Wavelength converted semiconductor light emitting devices |
US20070001182A1 (en) * | 2005-06-30 | 2007-01-04 | 3M Innovative Properties Company | Structured phosphor tape article |
US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
US20070161135A1 (en) * | 2006-01-09 | 2007-07-12 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
US20090173957A1 (en) * | 2005-06-23 | 2009-07-09 | Osram Opto Semiconductors Gmbh | Wavelength-converting converter material, light-emitting optical component, and method for the production thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3925137B2 (en) | 2001-10-03 | 2007-06-06 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
KR100499129B1 (en) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | Light emitting laser diode and fabricatin method thereof |
JP4374913B2 (en) * | 2003-06-05 | 2009-12-02 | 日亜化学工業株式会社 | Light emitting device |
JP2005300576A (en) * | 2004-04-06 | 2005-10-27 | Konica Minolta Opto Inc | Glare-proof antireflection film, polarizing plate and display device |
JP4546176B2 (en) * | 2004-07-16 | 2010-09-15 | 京セラ株式会社 | Light emitting device |
JP2008521211A (en) * | 2004-07-24 | 2008-06-19 | ヨン ラグ ト | LED device including thin-film phosphor having two-dimensional nano-periodic structure |
JP4692059B2 (en) * | 2005-04-25 | 2011-06-01 | パナソニック電工株式会社 | Method for manufacturing light emitting device |
-
2007
- 2007-03-13 KR KR1020070024368A patent/KR100862532B1/en active IP Right Grant
- 2007-12-28 JP JP2007338530A patent/JP4895998B2/en active Active
-
2008
- 2008-01-10 US US12/007,417 patent/US7795055B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050006659A1 (en) * | 2003-07-09 | 2005-01-13 | Ng Kee Yean | Light emitting diode utilizing a discrete wavelength-converting layer for color conversion |
US20050167685A1 (en) * | 2004-01-21 | 2005-08-04 | Yin Chua Janet B. | Device and method for emitting output light using Group IIB element Selenide-based phosphor material |
US20050184638A1 (en) * | 2004-02-23 | 2005-08-25 | Lumileds Lighting, U.S., Llc | Wavelength converted semiconductor light emitting devices |
US20090173957A1 (en) * | 2005-06-23 | 2009-07-09 | Osram Opto Semiconductors Gmbh | Wavelength-converting converter material, light-emitting optical component, and method for the production thereof |
US20070001182A1 (en) * | 2005-06-30 | 2007-01-04 | 3M Innovative Properties Company | Structured phosphor tape article |
US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
US20070161135A1 (en) * | 2006-01-09 | 2007-07-12 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100090245A1 (en) * | 2008-10-13 | 2010-04-15 | Hung-Yi Lin | Light emitting diode package and method of making the same |
US8129206B2 (en) * | 2008-10-13 | 2012-03-06 | Touch Micro-System Technology Corp. | Light emitting diode package and method of making the same |
US20100244071A1 (en) * | 2009-03-26 | 2010-09-30 | Toyoda Gosei Co., Ltd. | Method of manufacturing led lamp |
US8759123B2 (en) * | 2009-03-26 | 2014-06-24 | Toyoda Gosei Co., Ltd. | Method of manufacturing LED lamp |
US20110198645A1 (en) * | 2010-02-12 | 2011-08-18 | Kyoung Woo Jo | Light emitting device and light emitting device package |
US8421110B2 (en) | 2010-02-12 | 2013-04-16 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US8710535B2 (en) | 2010-02-12 | 2014-04-29 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
US9720159B2 (en) | 2011-01-31 | 2017-08-01 | Lg Innotek Co., Ltd. | Optical member and display device including the same |
US8329485B2 (en) | 2011-05-09 | 2012-12-11 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED phosphor ink composition for ink-jet printing |
US9766392B2 (en) | 2011-07-14 | 2017-09-19 | Lg Innotek Co., Ltd. | Optical member, display device having the same and method of fabricating the same |
US9715055B2 (en) | 2011-07-14 | 2017-07-25 | Lg Innotek Co., Ltd. | Display device and optical member |
US9720160B2 (en) | 2011-07-14 | 2017-08-01 | Lg Innotek Co., Ltd. | Display device and optical member |
US9766386B2 (en) | 2011-07-18 | 2017-09-19 | Lg Innotek Co., Ltd. | Optical member and display device having the same |
US9835785B2 (en) | 2011-07-18 | 2017-12-05 | Lg Innotek Co., Ltd. | Optical member, display device having the same, and method of fabricating the same |
US9851602B2 (en) | 2011-07-18 | 2017-12-26 | Lg Innotek Co., Ltd. | Optical member and display device having the same |
US10054730B2 (en) | 2011-07-18 | 2018-08-21 | Lg Innotek Co., Ltd. | Optical member, display device having the same, and method of fabricating the same |
US9829621B2 (en) | 2011-07-20 | 2017-11-28 | Lg Innotek Co., Ltd. | Optical member and display device having the same |
US20150036379A1 (en) * | 2011-11-07 | 2015-02-05 | Lg Innotek Co., Ltd. | Optical sheet, display device and light emitting device having the same |
US10247871B2 (en) * | 2011-11-07 | 2019-04-02 | Lg Innotek Co., Ltd. | Optical sheet, display device and light emitting device having the same |
Also Published As
Publication number | Publication date |
---|---|
JP4895998B2 (en) | 2012-03-14 |
KR20080083776A (en) | 2008-09-19 |
JP2008227458A (en) | 2008-09-25 |
KR100862532B1 (en) | 2008-10-09 |
US20090286337A1 (en) | 2009-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7795055B2 (en) | Method of manufacturing light emitting diode package | |
JP5618481B2 (en) | Surface-mountable optoelectronic element and method for manufacturing surface-mountable optoelectronic element | |
KR100703217B1 (en) | Method for fabricating a light emitting diode package | |
US7839087B2 (en) | Light emitting device and method of manufacturing the same | |
JP2008288410A (en) | Semiconductor light-emitting device, and manufacturing method thereof | |
JP4749870B2 (en) | Method for manufacturing light emitting device | |
US20110018016A1 (en) | Reduced color over angle variation leds | |
US20140367729A1 (en) | Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device | |
EP2573828A2 (en) | Manufacturing method for light-emitting device and the light-emitting device | |
JP2010123606A5 (en) | ||
JP2010123606A (en) | Substrate with through electrode, and methods of manufacturing light-emitting device and substrate with through electrode | |
JP5826115B2 (en) | Light irradiation device, light irradiation module, and printing apparatus | |
JP2014090055A (en) | Light irradiation module and printer | |
US20210167046A1 (en) | Surface-emitting light source and method of manufacturing the same | |
KR102011644B1 (en) | Method for manufacturing a light emitting diode device and the light emitting diode device so manufactured | |
WO2014084143A1 (en) | Light irradiation device, light irradiation module and printing device | |
JP2012245750A (en) | Light irradiation module and printing device | |
JP2010123605A (en) | Light-emitting device and method of manufacturing the same | |
US20220209079A1 (en) | Light-emitting module and method of manufacturing light-emitting module | |
JP5675506B2 (en) | Light irradiation device, light irradiation module, and printing apparatus | |
JP2012114384A (en) | Light irradiation device and printing device | |
JP2012009696A (en) | Light emitting device and led illuminating equipment | |
KR20120054484A (en) | Light emitting device package and method of fabricating the same | |
JP7393617B2 (en) | Light emitting device and manufacturing method thereof | |
US12009460B2 (en) | Method for producing a conversion element, and conversion element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SAMSUNG ELECTRO-MECHANICS CO., LTD., KOREA, REPUBL Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, YOUNG IL;JOUNG, JAE WOO;CHOI, JOON RAK;REEL/FRAME:020389/0045 Effective date: 20071211 |
|
AS | Assignment |
Owner name: SAMSUNG LED CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SAMSUNG ELECTRO-MECHANICS CO., LTD.;REEL/FRAME:024723/0532 Effective date: 20100712 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: MERGER;ASSIGNOR:SAMSUNG LED CO., LTD.;REEL/FRAME:028744/0272 Effective date: 20120403 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552) Year of fee payment: 8 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 12 |