JP2008205022A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2008205022A JP2008205022A JP2007036620A JP2007036620A JP2008205022A JP 2008205022 A JP2008205022 A JP 2008205022A JP 2007036620 A JP2007036620 A JP 2007036620A JP 2007036620 A JP2007036620 A JP 2007036620A JP 2008205022 A JP2008205022 A JP 2008205022A
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- 230000007423 decrease Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 101100426900 Caenorhabditis elegans trd-1 gene Proteins 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
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- 239000012212 insulator Substances 0.000 description 1
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- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14689—MOS based technologies
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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Abstract
【解決手段】光電変換素子22と該光電変換素子で光電変換して得られた電荷をフローティングディフージョン部25に読み出す読出しトランジスタTr1を含む画素が配列させてなる固体撮像装置であって、フローティングディフージョン部25に接する素子分離領域がシャロートレンチ素子分離領域36で形成され、それ以外の素子分離領域が拡散素子分離領域37で形成されて成る。
【選択図】図4
Description
図4は、本実施の形態に係る画素アレイ部12のレイアウトの一例を示している。本実施の形態においては、図4に示すように、光電変換素子となるフォトダイオード22と3つの画素トランジスタ、すなわち転送トランジスタTr1、リセットトランジスタTr2及び増幅トランジスタTr3とで構成された単位画素11が、複数配列されて成る。各トランジスタTr1〜Tr3は、この例ではnチャネルMOSトランジスタで構成される。
転送トランジスタTr1は、フォトダイオード22をソースとし、p型半導体ウェル領域21に形成したフローティングディフージョン(FD)部となるn型半導体領域(拡散層)25をドレインとして、ゲート絶縁膜26を介して転送ゲート電極27を形成して構成される。
リセットトランジスタTr2は、フローティングディフージョン(FD)部となるn型半導体領域25をソースとし、p型半導体ウェル領域21に形成したn型半導体領域(拡散層)28をドレインとして、ゲート絶縁膜26を介してリセットゲート電極29を形成して構成される。
増幅トランジスタTr3は、p型半導体ウェル領域21に形成したn型半導体領域(拡散層)31及び28をソース及びドレインとしてゲート絶縁膜26を介して増幅ゲート電極32を形成して構成される。
図9の例では、ゲート電極〔27、29、32〕の第1部分46をp型の不純物を導入したポリシリコンで形成し、第2部分47をn型不純物を導入したポリシリコンで形成して構成される(第1部分/第2部分がp型/n型で形成される)。
図10の例では、ゲート電極〔27、29、32〕の第1部分46をn型の不純物を導入したポリシリコンで形成し、第2部分47をノンドープのポリシリコンで形成して構成される(第1部分/第2部分がn型/ノンドープで形成される)。
図11の例では、ゲート電極〔27、29、32〕の第1部分46をp型の不純物を導入したポリシリコンで形成し、第2部分47をノンドープのポリシリコンで形成して構成される(第1部分/第2部分がp型/ノンドープで形成される)。
このような第5実施の形態においても、暗電流、白点の発生を抑制しつつ、変換効率を上げて高感度化を図ることができる。
Claims (7)
- 光電変換素子と該光電変換素子で光電変換して得られた電荷をフローティングディフージョン部に読み出す読出しトランジスタを含む画素が配列されてなる固体撮像装置であって、
前記フローティングディフージョン部に接する素子分離領域がシャロートレンチ素子分離領域で形成され、
それ以外の素子分離領域が拡散素子分離領域で形成されている
ことを特徴とする固体撮像装置。 - 前記フローティングディフージョン部に接する部分から連続して読出しゲート電極下の一部に前記シャロートレンチ素子分離領域が延長されている
ことを特徴とする請求項1記載の固体撮像装置。 - 前記読出しゲート電極下のシャロートレンチ素子分離領域の延長部端と前記光電変換素子との間に拡散素子分離領域が介在している
ことを特徴とする請求項2記載の固体撮像装置。 - 前記シャロートレンチ素子分離領域及び前記拡散素子分離領域上にゲート絶縁膜と同等の膜厚を有する平坦化された絶縁膜が形成されている
ことを特徴とする請求項1記載の固体撮像装置。 - 前記拡散素子分離領域上にゲート絶縁膜より厚い絶縁層が形成されている
ことを特徴とする請求項1記載の固体撮像装置。 - 前記画素のリセットトランジスタのソース領域が、フローティングディフージョン部から離れた拡散層で形成され、
前記拡散層の周囲の素子分離領域がシャロートレンチ素子分離領域で形成されている
ことを特徴とする請求項1記載の固体撮像装置。 - 前記画素の配列が、複数の画素の前記読出しトランジスタを除く他の画素トランジスタが共有された画素共有構造の配列である
ことを特徴とする請求項1記載の固体撮像装置。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007036620A JP4420039B2 (ja) | 2007-02-16 | 2007-02-16 | 固体撮像装置 |
TW096148750A TWI389307B (zh) | 2007-02-16 | 2007-12-19 | 固態成像裝置及攝影機 |
US12/003,981 US8350305B2 (en) | 2007-02-16 | 2008-01-04 | Solid-state imaging device and camera |
KR1020080012315A KR101443183B1 (ko) | 2007-02-16 | 2008-02-11 | 고체 촬상 장치 및 카메라 |
CN2008100082928A CN101246898B (zh) | 2007-02-16 | 2008-02-15 | 固态成像器件和照相机 |
CN201210409870.5A CN102938408B (zh) | 2007-02-16 | 2008-02-15 | 固态成像器件和照相机 |
US13/659,505 US9165958B2 (en) | 2007-02-16 | 2012-10-24 | Solid-state imaging device and camera |
US14/853,071 US9543350B2 (en) | 2007-02-16 | 2015-09-14 | Solid-state imaging device and camera including discrete trench isolation structure |
US15/359,779 US9711561B2 (en) | 2007-02-16 | 2016-11-23 | Solid-state imaging device and camera including discrete trench isolation structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007036620A JP4420039B2 (ja) | 2007-02-16 | 2007-02-16 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008205022A true JP2008205022A (ja) | 2008-09-04 |
JP4420039B2 JP4420039B2 (ja) | 2010-02-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007036620A Expired - Fee Related JP4420039B2 (ja) | 2007-02-16 | 2007-02-16 | 固体撮像装置 |
Country Status (5)
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---|---|
US (4) | US8350305B2 (ja) |
JP (1) | JP4420039B2 (ja) |
KR (1) | KR101443183B1 (ja) |
CN (2) | CN101246898B (ja) |
TW (1) | TWI389307B (ja) |
Cited By (8)
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WO2013027524A1 (ja) * | 2011-08-24 | 2013-02-28 | シャープ株式会社 | 固体撮像素子 |
US8604408B2 (en) | 2009-11-30 | 2013-12-10 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
US8809921B2 (en) | 2010-01-27 | 2014-08-19 | Sony Corporation | Solid-state imaging apparatus, method of manufacturing same, and electronic apparatus |
WO2014192576A1 (ja) * | 2013-05-31 | 2014-12-04 | ソニー株式会社 | 固体撮像素子、電子機器、および製造方法 |
JP2016028438A (ja) * | 2015-09-30 | 2016-02-25 | キヤノン株式会社 | 固体撮像装置 |
US9602746B2 (en) | 2013-07-01 | 2017-03-21 | Sony Corporation | Image pickup device and electronic apparatus |
JP2017147353A (ja) * | 2016-02-18 | 2017-08-24 | 株式会社東芝 | 固体撮像装置 |
US9881960B2 (en) | 2012-06-26 | 2018-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state imaging device and method of manufacturing the device |
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JP4420039B2 (ja) | 2007-02-16 | 2010-02-24 | ソニー株式会社 | 固体撮像装置 |
JP5428394B2 (ja) * | 2009-03-04 | 2014-02-26 | ソニー株式会社 | 固体撮像装置とその製造方法、および撮像装置 |
JP5471117B2 (ja) | 2009-07-24 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法並びにカメラ |
JP5564874B2 (ja) | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
KR101874784B1 (ko) | 2010-03-08 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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JP4420039B2 (ja) | 2007-02-16 | 2010-02-24 | ソニー株式会社 | 固体撮像装置 |
JP5564874B2 (ja) | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
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2007
- 2007-02-16 JP JP2007036620A patent/JP4420039B2/ja not_active Expired - Fee Related
- 2007-12-19 TW TW096148750A patent/TWI389307B/zh not_active IP Right Cessation
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2008
- 2008-01-04 US US12/003,981 patent/US8350305B2/en active Active
- 2008-02-11 KR KR1020080012315A patent/KR101443183B1/ko not_active IP Right Cessation
- 2008-02-15 CN CN2008100082928A patent/CN101246898B/zh active Active
- 2008-02-15 CN CN201210409870.5A patent/CN102938408B/zh active Active
-
2012
- 2012-10-24 US US13/659,505 patent/US9165958B2/en active Active
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2015
- 2015-09-14 US US14/853,071 patent/US9543350B2/en active Active
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- 2016-11-23 US US15/359,779 patent/US9711561B2/en active Active
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US8809921B2 (en) | 2010-01-27 | 2014-08-19 | Sony Corporation | Solid-state imaging apparatus, method of manufacturing same, and electronic apparatus |
WO2013027524A1 (ja) * | 2011-08-24 | 2013-02-28 | シャープ株式会社 | 固体撮像素子 |
US9881960B2 (en) | 2012-06-26 | 2018-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state imaging device and method of manufacturing the device |
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WO2014192576A1 (ja) * | 2013-05-31 | 2014-12-04 | ソニー株式会社 | 固体撮像素子、電子機器、および製造方法 |
JP2014236071A (ja) * | 2013-05-31 | 2014-12-15 | ソニー株式会社 | 固体撮像素子、電子機器、および製造方法 |
KR20160016754A (ko) | 2013-05-31 | 2016-02-15 | 소니 주식회사 | 고체 촬상 소자, 전자 기기, 및 제조 방법 |
US9728569B2 (en) | 2013-05-31 | 2017-08-08 | Sony Corporation | Solid-state imaging device and electronic apparatus |
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JP2016028438A (ja) * | 2015-09-30 | 2016-02-25 | キヤノン株式会社 | 固体撮像装置 |
JP2017147353A (ja) * | 2016-02-18 | 2017-08-24 | 株式会社東芝 | 固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
US20170084660A1 (en) | 2017-03-23 |
CN101246898A (zh) | 2008-08-20 |
US20130049083A1 (en) | 2013-02-28 |
KR101443183B1 (ko) | 2014-11-03 |
US20160005783A1 (en) | 2016-01-07 |
TW200836337A (en) | 2008-09-01 |
KR20080076753A (ko) | 2008-08-20 |
CN102938408B (zh) | 2016-05-25 |
CN102938408A (zh) | 2013-02-20 |
US9543350B2 (en) | 2017-01-10 |
CN101246898B (zh) | 2012-12-05 |
TWI389307B (zh) | 2013-03-11 |
US9711561B2 (en) | 2017-07-18 |
US9165958B2 (en) | 2015-10-20 |
JP4420039B2 (ja) | 2010-02-24 |
US20080197387A1 (en) | 2008-08-21 |
US8350305B2 (en) | 2013-01-08 |
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