JP2008193005A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2008193005A
JP2008193005A JP2007028607A JP2007028607A JP2008193005A JP 2008193005 A JP2008193005 A JP 2008193005A JP 2007028607 A JP2007028607 A JP 2007028607A JP 2007028607 A JP2007028607 A JP 2007028607A JP 2008193005 A JP2008193005 A JP 2008193005A
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JP
Japan
Prior art keywords
dummy gate
semiconductor substrate
gate
sputtering
surface film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007028607A
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English (en)
Japanese (ja)
Other versions
JP2008193005A5 (enExample
Inventor
Shiyousuu Watanabe
昌崇 渡邉
Hiroshi Yano
浩 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2007028607A priority Critical patent/JP2008193005A/ja
Priority to US12/027,430 priority patent/US7648867B2/en
Publication of JP2008193005A publication Critical patent/JP2008193005A/ja
Publication of JP2008193005A5 publication Critical patent/JP2008193005A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007028607A 2007-02-07 2007-02-07 半導体装置の製造方法 Pending JP2008193005A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007028607A JP2008193005A (ja) 2007-02-07 2007-02-07 半導体装置の製造方法
US12/027,430 US7648867B2 (en) 2007-02-07 2008-02-07 Method for fabricating a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007028607A JP2008193005A (ja) 2007-02-07 2007-02-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2008193005A true JP2008193005A (ja) 2008-08-21
JP2008193005A5 JP2008193005A5 (enExample) 2010-03-18

Family

ID=39676532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007028607A Pending JP2008193005A (ja) 2007-02-07 2007-02-07 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US7648867B2 (enExample)
JP (1) JP2008193005A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8728884B1 (en) * 2009-07-28 2014-05-20 Hrl Laboratories, Llc Enhancement mode normally-off gallium nitride heterostructure field effect transistor
JP5761533B2 (ja) 2010-08-27 2015-08-12 国立大学法人 奈良先端科学技術大学院大学 ＳｉＣ半導体素子
US8853035B2 (en) 2011-10-05 2014-10-07 International Business Machines Corporation Tucked active region without dummy poly for performance boost and variation reduction
JP6094159B2 (ja) * 2012-11-13 2017-03-15 三菱電機株式会社 半導体装置の製造方法
JP6111821B2 (ja) * 2013-04-25 2017-04-12 三菱電機株式会社 電界効果トランジスタ
US10243061B1 (en) * 2017-11-15 2019-03-26 International Business Machines Corporation Nanosheet transistor
CN115083902A (zh) * 2022-07-08 2022-09-20 厦门市三安集成电路有限公司 一种t型栅及其制备方法、hemt器件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01116070A (ja) * 1987-10-29 1989-05-09 Internatl Business Mach Corp <Ibm> スパツタ装置
JPH01136375A (ja) * 1987-11-24 1989-05-29 Sumitomo Electric Ind Ltd 電界効果トランジスタの製造方法
US4963501A (en) * 1989-09-25 1990-10-16 Rockwell International Corporation Method of fabricating semiconductor devices with sub-micron linewidths
JPH06310542A (ja) * 1993-04-27 1994-11-04 Sumitomo Electric Ind Ltd 半導体装置の電極の製造方法
JPH11135519A (ja) * 1997-10-30 1999-05-21 Sanyo Electric Co Ltd 電界効果型半導体装置の製造方法
JP2003270799A (ja) * 2002-03-18 2003-09-25 Murata Mfg Co Ltd レジストパターン、それを用いた電極形成方法及び電子部品

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863879A (en) * 1987-12-16 1989-09-05 Ford Microelectronics, Inc. Method of manufacturing self-aligned GaAs MESFET
JPH10125698A (ja) 1996-10-24 1998-05-15 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US6297539B1 (en) * 1999-07-19 2001-10-02 Sharp Laboratories Of America, Inc. Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same
US6060755A (en) * 1999-07-19 2000-05-09 Sharp Laboratories Of America, Inc. Aluminum-doped zirconium dielectric film transistor structure and deposition method for same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01116070A (ja) * 1987-10-29 1989-05-09 Internatl Business Mach Corp <Ibm> スパツタ装置
JPH01136375A (ja) * 1987-11-24 1989-05-29 Sumitomo Electric Ind Ltd 電界効果トランジスタの製造方法
US4963501A (en) * 1989-09-25 1990-10-16 Rockwell International Corporation Method of fabricating semiconductor devices with sub-micron linewidths
JPH06310542A (ja) * 1993-04-27 1994-11-04 Sumitomo Electric Ind Ltd 半導体装置の電極の製造方法
JPH11135519A (ja) * 1997-10-30 1999-05-21 Sanyo Electric Co Ltd 電界効果型半導体装置の製造方法
JP2003270799A (ja) * 2002-03-18 2003-09-25 Murata Mfg Co Ltd レジストパターン、それを用いた電極形成方法及び電子部品

Also Published As

Publication number Publication date
US20080188066A1 (en) 2008-08-07
US7648867B2 (en) 2010-01-19

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