JP2008193005A5 - - Google Patents
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- Publication number
- JP2008193005A5 JP2008193005A5 JP2007028607A JP2007028607A JP2008193005A5 JP 2008193005 A5 JP2008193005 A5 JP 2008193005A5 JP 2007028607 A JP2007028607 A JP 2007028607A JP 2007028607 A JP2007028607 A JP 2007028607A JP 2008193005 A5 JP2008193005 A5 JP 2008193005A5
- Authority
- JP
- Japan
- Prior art keywords
- dummy gate
- semiconductor device
- manufacturing
- semiconductor substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000004544 sputter deposition Methods 0.000 claims 3
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 238000001659 ion-beam spectroscopy Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007028607A JP2008193005A (ja) | 2007-02-07 | 2007-02-07 | 半導体装置の製造方法 |
| US12/027,430 US7648867B2 (en) | 2007-02-07 | 2008-02-07 | Method for fabricating a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007028607A JP2008193005A (ja) | 2007-02-07 | 2007-02-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008193005A JP2008193005A (ja) | 2008-08-21 |
| JP2008193005A5 true JP2008193005A5 (enExample) | 2010-03-18 |
Family
ID=39676532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007028607A Pending JP2008193005A (ja) | 2007-02-07 | 2007-02-07 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7648867B2 (enExample) |
| JP (1) | JP2008193005A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8728884B1 (en) * | 2009-07-28 | 2014-05-20 | Hrl Laboratories, Llc | Enhancement mode normally-off gallium nitride heterostructure field effect transistor |
| JP5761533B2 (ja) | 2010-08-27 | 2015-08-12 | 国立大学法人 奈良先端科学技術大学院大学 | ＳｉＣ半導体素子 |
| US8853035B2 (en) | 2011-10-05 | 2014-10-07 | International Business Machines Corporation | Tucked active region without dummy poly for performance boost and variation reduction |
| JP6094159B2 (ja) * | 2012-11-13 | 2017-03-15 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6111821B2 (ja) * | 2013-04-25 | 2017-04-12 | 三菱電機株式会社 | 電界効果トランジスタ |
| US10243061B1 (en) * | 2017-11-15 | 2019-03-26 | International Business Machines Corporation | Nanosheet transistor |
| CN115083902A (zh) * | 2022-07-08 | 2022-09-20 | 厦门市三安集成电路有限公司 | 一种t型栅及其制备方法、hemt器件 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
| JPH01136375A (ja) * | 1987-11-24 | 1989-05-29 | Sumitomo Electric Ind Ltd | 電界効果トランジスタの製造方法 |
| US4863879A (en) * | 1987-12-16 | 1989-09-05 | Ford Microelectronics, Inc. | Method of manufacturing self-aligned GaAs MESFET |
| US4963501A (en) * | 1989-09-25 | 1990-10-16 | Rockwell International Corporation | Method of fabricating semiconductor devices with sub-micron linewidths |
| JPH06310542A (ja) * | 1993-04-27 | 1994-11-04 | Sumitomo Electric Ind Ltd | 半導体装置の電極の製造方法 |
| JPH10125698A (ja) | 1996-10-24 | 1998-05-15 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
| JPH11135519A (ja) * | 1997-10-30 | 1999-05-21 | Sanyo Electric Co Ltd | 電界効果型半導体装置の製造方法 |
| US6297539B1 (en) * | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
| US6060755A (en) * | 1999-07-19 | 2000-05-09 | Sharp Laboratories Of America, Inc. | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same |
| JP2003270799A (ja) * | 2002-03-18 | 2003-09-25 | Murata Mfg Co Ltd | レジストパターン、それを用いた電極形成方法及び電子部品 |
-
2007
- 2007-02-07 JP JP2007028607A patent/JP2008193005A/ja active Pending
-
2008
- 2008-02-07 US US12/027,430 patent/US7648867B2/en not_active Expired - Fee Related
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